Molecular depth profiling and imaging using cluster ion beams with femtosecond laser postionization

The emergence of cluster ion sources as viable SIMS probes has opened new possibilities for detection of neutral molecules by laser postionization. Previous studies have shown that with atomic bombardment multiphoton ionization using high-power femtosecond pulses leads to photofragmentation. The large amount of photofragmentation can be mostly attributed to high amounts of internal energy imparted to the sputtered molecules during the desorption process. Several pieces of preliminary data suggest that molecules subjected to cluster beam bombardment are desorbed with lower internal energies than those subjected to atomic beam bombardment. Lower energy molecules may then be less likely to photodissociate creating less photofragments in the laser postionization spectra. Here we present data taken from coronene films prepared by physical vapor deposition comparing a 40 keV ion source with a 20 keV Au⁺ ion source, which supports this hypothesis. Furthermore, the depth profiling capabilities of cluster beams may be combined with laser postionization to obtain molecular depth profiles by monitoring the neutral flux. In addition, imaging and depth profiling may be combined with atomic force microscopy (AFM) to provide three-dimensional molecular images.     

Modeling the dissociation and ionization of a sputtered organic molecule

The evolution of an organic molecule after sputtering from a gold surface has been analyzed by classical molecular dynamics and ab initio calculations to gain insight into the ionization and fragmentation processes occurring in SIMS. The calculated ionization potential (6.2 eV) of the tetraphenylnaphthalene (TPN) molecule has been found to be close to the unimolecular dissociation energy (5.4 eV) of the most favorable reaction channel involving the loss of a phenyl ring. On the other hand, our calculations show that the internal energies of sputtered TPN molecules can be significantly larger than 5-6 eV. Therefore, it appears energetically possible to relax such excited molecules via both fragmentation and ionization.We propose to virtually decompose the TPN molecule into its basic fragments. The rationale is that, if the molecule is very excited, then separate parts (e.g. pendant phenyl rings) can interact with each other almost independently. The analysis of the molecular motion after emission shows that the oscillations along the phenyl-naphthalene bond direction, expected to induce the molecule fragmentation by the loss of a phenyl ring, are relatively small (they store only about 0.2 eV). On the other hand, the relative energy stored in the inter-phenyl interactions, modulated by their bending and responsible for ionization according to our hypothesis, oscillates over a range of 6-7 eV and favors ionization.     

Donor-acceptor pairs and excitons recombinations in AgGaS2

Silver thiogallate (AgGaS₂) is a ternary semiconductor which crystallizes in the chalcopyrite structure. Silver thiogallate has been widely used in different applications for its interesting physical properties: wide transparency range (from 0.5 to 12 μm), high non-linear optical coefficient combined with good mechanical properties.The direct band gap in this compound is of about 2.7 eV and emissions due to free and bound excitons had been observed. Photoluminescence spectrum is also characterized by a wide emission band centred at 496 nm (2.50 eV) due to donor-acceptor pairs recombination (DAP).We performed photoluminescence (PL) measurements exciting with the third harmonic (3.5 eV) of a Nd:YAG laser from room temperature down to 10 K at different excitation power.In this work, we report the dependence of the photoluminescence features of AgGaS₂ on the excitation power at various temperatures: ionization energy of defects are estimated on the basis DAP theoretical model and of thermal quenching of the photoluminescence; evidences of non-radiative processes competitive to DAP is also presented.     

Probability of ionization of sputtered particles as a function of their energy: Part I: Negative Si ions

In this study we have investigated how the probability of ionization of sputtered Si atoms to form negative ions depends on the energy of the atoms. We have determined the ionization probability from experimental SIMS energy distributions using a special experimental technique, which included de-convolution of the energy distribution with an instrumental transmission function, found by separate measurements.We found that the ionization probability increases as a power law ∼E^0.677 for particles sputtered with energies of 0-10 eV, then becomes a constant value (within the limits of experimental error) for particles sputtered with energies of 30-100 eV. The energy distributions of Si⁻ ions, measured under argon and cesium ion sputtering, confirmed this radical difference between the yields from low and high-energy ions.To explain these results we have considered ionization mechanisms that are different for the low energy atoms (<10 eV) and for the atoms emitted with higher energy (>30 eV).     

Yields and ionization probabilities of sputtered Inn particles under atomic and polyatomic Aum ion bombardment

The emission of neutral and charged atoms and clusters from a polycrystalline indium surface under bombardment with 5 and 10 keV Au, Au₂, Au₃ and Au₅ projectiles was investigated. Single photon laser postionization was utilized for the detection of sputtered neutral particles. Secondary ions were detected without the laser under otherwise exactly the same experimental conditions. The relative cluster yields were found to be enhanced under polyatomic projectile bombardment, more so the larger the number of atoms in the sputtered cluster. The ionization probability strongly increases with increasing cluster size, but is essentially independent of the projectile impact energy. At a fixed impact energy, the ionization probability of sputtered monomers was found to decrease with increasing number of constituent gold atoms per projectile, but there was no detectable effect for sputtered dimers and larger clusters.     

K-shell core-electron binding energies for phosphorus- and sulfur-containing molecules calculated by density functional theory

In this paper, 1s ionization energies for P- and S-containing molecules were calculated using energy-difference method by DFT. Using observed core-electron binding energies (CEBEs) as reference, we found that the Becke00x(xc) exchange-correlation functional (E_xc) is the best choice for CEBEs(P1s), with an average absolute deviation (AAD) of 0.20 eV, and that the best choice for CEBEs(S1s) is E_xc = BmTau1, with an average absolute deviation (AAD) of 0.22 eV. However, the best single functional for calculation of both P and S is E_xc = VS98, resulting in the weighted AAD of 0.43 eV. Our results are also showing that the quality of AAD changes slightly with the apparent orbital hybridization of the atom.     

Femtosecond laser-induced fragmentation and cluster formation studies of solid phase trinitrotoluene using time-of-flight mass spectrometry

We use surface-femtosecond laser mass spectrometry to study the fragments/products formed when trinitrotoluene (TNT) is subjected to femtosecond laser pulse irradiation and to study the conditions under which TNT is removed from a solid surface. In surface-femtosecond laser mass spectrometry a compound is deposited on a solid substrate and is desorbed into vacuum by femtosecond irradiation forming a plume of ionized and neutral species. The positive or negative ions are then accelerated by an electric potential and allowed to drift in the field-free region of a time-of-flight mass spectrometer. The mass-to-charge ratio of each ion is obtained using the value of the accelerating field and the ion flight time. In this paper we report femtosecond laser mass spectra for the positive ions formed by desorbing TNT with 130 fs pulses centered at 800 nm for fluences ranging from 7 to 1.4 × 10⁵ J/m². The conditions under which TNT removal and ionization occur are also discussed.     

Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F₂, 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ=1.2±0.1 ns for the range of temperatures 16-150 K. The blue band decay possesses fast and slow components. The fast component of the blue band decay is about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant equal to 17±1 μs within the temperature range 16-200 K. deviations from exponential decay were observed as well and explained by influence of nearest interstitial OH groups on the luminescence center. The UV band was not detected for F₂ laser excitation. For the case of KrF laser only a structure less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination process with two components having characteristic time about 1 and 60 μs. For blue band recombination luminescence decay is lasting to ms range of time with power law decay ∼t⁻¹.For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K. such an effect does not take place in the case of photoexcitation with lasers. The activation energies for both cases are different as well. Average value of that is 0.03±0.01 eV for the case of X-ray luminescence and it is 0.15±0.05 eV for the case of PL. So, the processes of thermal quenching are different for these kinds of excitation and, probably, are related to interaction of the luminescence center with OH groups.Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on destruction of luminescent defects.The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen deficient silica glass and induced by radiation luminescence of α-quartz crystal presumes similar nature of centers in those materials.     

Substrate temperature influence on the properties of nanostructured ZnO transparent ultrathin films grown by PLD

Zinc oxide films of 40 nm thickness have been deposited on glass substrates by pulsed laser deposition using an excimer XeCl laser (308 nm) at different substrate temperatures ranging from room temperature to 650 °C. Surface investigations carried out by using atomic force microscopy have shown a strong influence of temperature on the films surface topography. UV-VIS transmittance measurements have shown that our ZnO films are highly transparent in the visible wavelength region, having an average transmittance of ∼90%. The optical band gap of the films was found to be 3.26 eV, which is lower than the theoretical value of 3.37 eV. Besides the normal absorption edge related to the transition between the valence and the conduction band, an additional absorption band was also recorded in the wavelength region around 364 nm (∼3.4 eV). This additional absorption band may be due to excitonic, impurity, and/or quantum size effects. Photoreduction/oxidation in ozone of the ZnO films lead to larger conductivity changes for higher deposition temperature. In conclusion, the ozone sensing characteristics as well as the optical properties of the ZnO thin films deposited by pulsed laser deposition are strongly influenced by the substrate temperature during growth. The sensitivity of the films towards ozone might be enhanced significantly by the control of the films deposition parameters and surface characteristics.     

Electron stimulated desorption of cesium atoms from germanium-covered tungsten

The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

Deposition of potassium-oxygen on silicon surfaces by pulsed laser ablation of potassium superoxide: Study of work function changes

Potassium-oxygen species were deposited on pure, Si nanoparticles coated and H-terminated Si nanoparticles coated p-Si(1 0 0) surfaces by pulsed laser ablation of potassium superoxide (KO₂) target. The deposition properties, composition and the work function changes of the deposited species were investigated in situ using an X-ray photoelectron spectroscopy (XPS) and a Kelvin probe measurement. The deposited species were assigned to K₂O₂ and KO₂, and they can be selectively deposited by controlling the laser fluence: i.e., at 200 mJ/cm² and at those more than 300 mJ/cm², respectively. Experimental results showed that the work function decreased drastically with depositing of KO_x (x = 1 or 2), and the minimum work function values observed were 1.0 eV and 0.7 eV for pure p-Si(1 0 0) and Si nanoparticles coated substrates, respectively. The study demonstrates the formation of the surface species with minimum work function can be identified by XPS.     

Photoelectron spectra of F3SiC2H4Si(CH3)3 molecule using monochromatized synchrotron radiation

A variety of photoelectron spectra for gas phase F₃SiC₂H₄Si(CH₃)₃ molecule have been measured using monochromatized undulator radiation and a hemispherical electrostatic analyzer. Valence photoelectron spectrum shows many peaks for ionization from shallow and deep molecular orbitals in the binding energy region of 9–40 eV. A calculation of ionization energies using the outer valence Green's function method indicates energies in agreement with experimental results below 17.5 eV. Spectra for Si L-shell electron emission show chemical shifts of Si atoms induced from different chemical environments around two Si atoms and also exhibit spin–orbit splitting for 2p photoelectrons. Further photoelectron spectra for C K-shell and F K-shell are discussed in comparison with those of related molecules.     

Mechanism of ablation of CdS at laser wavelengths in the visible and in the UV

The mechanisms of laser ablation of CdS targets at different laser wavelengths have been investigated. (CdS)_n⁺ cluster formation is only observed upon 532 nm ablation. The time and energy distributions of neutral S, S₂, Cd and CdS show significant dependence on laser wavelength. Bimodal distributions are observed at 266 and 308 nm. For the former, the average kinetic energy increases significantly with mass, taking values in the range of 0.3-1.7 eV. At 308 nm the slow component of the time distribution disappears at distances above the target larger than 1 cm. At this wavelength, the observed time distribution appears to reflect mainly the dynamics of the expansion. At 532 nm the time distribution is monomodal and the average kinetic energies are below 0.2 eV. Clear indications of the participation of thermal (at 532 nm) and non-thermal mechanisms (at 266 nm) have been found. It is tentatively concluded that the cluster formation observed upon ablation at 532 nm can be related to the thermal ablation mechanisms in which the low kinetic energy of the species in the plume and their similar velocities favor the aggregation processes.     

Dynamics of ZnO laser produced plasma in high pressure argon

Pulsed laser deposition of ZnO in high pressure gas offers a route for the catalyst-free preparation of ZnO nanorods less than 10 nm in diameter. This paper describes the results of some experiments to investigate the laser plume dynamics in the high gas pressure (5 × 10³-10⁴ Pa) regime used for PLD of ZnO nanorods. In this regime the ablation plume is strongly coupled to the gas and the plume expansion is brought to a halt within about 1 cm from the target. A 248 nm excimer laser was used to ablate a ceramic ZnO target in various pressures of argon. Time- and space-resolved UV/vis emission spectroscopy and Langmuir probe measurements were used to diagnose the plasma and follow the plume dynamics. By measuring the spatial profiles of Zn I and Zn II spectral lines it was possible to follow the propagation of the external and internal shock waves associated with the interaction of the ablation plume with the gas. The Langmuir probe measurements showed that the electron density was 10⁹-10¹⁰ cm⁻³ and the electron temperature was several eV. At these conditions the ionization equilibrium is described by the collisional-radiative model. The plume dynamics was also studied for ZnO targets doped with elements which are lighter (Mg), comparable to (Ga), and heavier (Er) than Zn, to see if there is any elemental segregation in the plume.     

Photoionization mass spectrometry and modeling studies of the chemistry of fuel-rich dimethyl ether flames

Reaction paths are identified for dimethyl ether (DME) combustion using modeling of new data from fuel-rich DME flat flames. A molecular-beam flame-sampling photoionization mass spectrometer, employing VUV synchrotron radiation, is applied to the measurement of mole fractions for 21 flame species in low-pressure premixed fuel-rich (Φ = 1.2, 1.68) DME/oxygen/argon flat flames. This approach is capable of resolving and identifying isomers and other flame species of near equal masses with ionization thresholds that differ by as little as 0.1 eV. The measurements agree well with flame modeling predictions, using a recently revised high-temperature DME kinetic mechanism, which identify reaction paths quite analogous to alkane combustion. They further reveal the presence of ethyl methyl ether, a molecule previously unobserved in flames and not included in present flame models.     

Stability and fragmentation of organic silicon functionalizations studied by laser desorption mass spectrometry

A method is introduced to investigate organic functionalizations on silicon by laser-induced thermal desorption (LITD), where well-ordered Si(1 1 1)-(1 × 1):H(D) surfaces are used to determine the desorption temperature as a function of laser fluence. To demonstrate the potential of this technique silicon surfaces with ultrathin oxide layers were functionalized with organic end groups. The species desorbed with focused XeCl laser pulses were monitored at an oblique angle and their time-of-flight (TOF) distributions were measured with a quadrupole mass analyzer after electron impact ionization. By assuming a negligible contribution of the oxide and organic layers to the heating effect, the TOF temperatures measured for Si(1 1 1)-(1 × 1):H(D) could be used to determine the mass of the desorbed species. Detailed results are presented for dimethylsilyl (DMS), bromomethyldimethylsilyl (BMDMS), and chloromethyldimethylsilyl (CMDMS) terminated surfaces which were prepared by silanization with suitable chloro and disilazane compounds. While for the DMS termination dimethylsilanol (76 u) is desorbed as a single species, clearly identifying the terminating group, in the case of BMDMS and CMDMS further fragmentation of the end group occurs at the surface.     

Electron impact ionization cross sections of the CO2 clusters

The modified Jain–Khare semi-empirical formalism for the evaluation of differential and integral electron impact ionization cross sections for molecules has been extended to the evaluation of cross sections for the electron ionization of CO₂ clusters: (CO₂)₂₄₀ and (CO₂)₁₇₀₀. The energy dependent differential cross sections are evaluated at the incident electron energies of 50, 100 and 200 eV. The integral total ionization cross sections have been calculated in the energy range varying from ionization thresholds to 1000 eV which revealed a good agreement with the available experimental and the theoretical data. The ionization rate coefficients have also been evaluated using the presently calculated ionization cross sections and Maxwell–Boltzmann energy distributions.     

Coverage effects on phenol adsorption on Si(1 0 0)2 × 1 as: A first principle calculation

We investigated the adsorption of a 6-dimers Si(1 0 0)2 × 1 surface as a function of coverage and adsorption type (molecular/dissociative) by first principle calculations. In particular, we performed calculations on models with 2, 3, 4 and 6 phenol molecules, corresponding to coverage Θ = 0.34, 0.5, 0.67 and 1. We found that total adsorption energy, when at least one phenol is in a molecular state is lower than the sum of the corresponding singly adsorbed molecules. The dissociative adsorption of multiple molecules, both in parallel and switched configuration is most favoured for a coverage Θ = 0.34 (2.6 eV per adsorbed molecule). This values decreases to 2.0 eV and remains constant till the coverage 1 is reached.The energy barrier for the molecular-to-dissociated transition of a phenol molecule, in presence of another dissociatively adsorbed molecule is ∼0.008 eV and it is similar to the value in case of single adsorption. Possible hydrogen displacements were also considered.     

An MRD-CI study of the electronic spectrum of Si3C3

Large-scale multi-reference configuration interaction (MRD-CI) calculations are used to compute the electronic spectrum of the pyramidal Si₃C₃ cluster. The first dipole-allowed transition is predicted at 4.30 eV. The dominating transition (21A′′←X1A′) is calculated at 4.74 eV with a π→π∗-type oscillator strength of f=0.52. This excitation together with two somewhat less intense (f=0.01-0.07) transitions around 5.2 eV and higher excitations between 5.7 and 5.9 eV could serve as a guideline for experimental search.