Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

Low dielectric constant SiOC(H) films are deposited on p-type Si(100) substrates by plasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES, C₇H₁₈O₃Si) and oxygen gas as precursors. The SiOC(H) films are deposited at room temperature, 100, 200, 300 and 400 °C and then annealed at 100, 200, 300 and 400 °C temperatures for 30 min in vacuum. The influence of deposition temperature and annealing on SiOC(H) films are investigated. Film thickness and refractive index are measured by field emission scanning electron microscopy and ellipsometry, respectively. Chemical bonding characteristics of as-deposited and annealed films are investigated by Fourier transform infrared (FTIR) spectroscopy in the absorbance mode. As more carbon atoms are incorporated into the SiOC(H) films, both film density and refractive index are decreased due to nano pore structure of the film. In the SiOC(H) film, CH₃ group as an end group is introduced into OSiO network, thereby reducing the density to decrease the dielectric constant thereof. The dielectric constant of SiOC(H) film is evaluated by C-V measurements using metal-insulator-semiconductor (MIS), Al/SiOC(H)/p-Si structure and it is found to be as low as 2.2 for annealed samples deposited at 400 °C.     

Structural study of thin films prepared from tungstate glass matrix by Raman and X-ray absorption spectroscopy

Thin films were prepared using glass precursors obtained in the ternary system NaPO₃BaF₂WO₃ and the binary system NaPO₃WO₃ with high concentrations of WO₃ (above 40% molar). Vitreous samples have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. Several structural characterizations were performed by Raman spectroscopy and X-ray Absorption Near Edge Spectroscopy (XANES) at the tungsten L_I and L_III absorption edges. XANES investigations showed that tungsten atoms are only sixfold coordinated (octahedral WO₆) and that these films are free of tungstate tetrahedral units (WO₄). In addition, Raman spectroscopy allowed identifying a break in the linear phosphate chains as the amount of WO₃ increases and the formation of POW bonds in the films network indicating the intermediary behavior of WO₆ octahedra in the film network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed identifying the presence of WO⁻ and WO terminal bonds and a progressive apparition of WOW bridging bonds for the most WO₃ concentrated samples (above 40% molar) attributed to the formation of WO₆ clusters.     

Ammonia adsorption and decomposition on silica supported Rh nanoparticles observed by in situ attenuated total reflection infrared spectroscopy

Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is applied to study NH₃, adsorbed from the gas phase, and its decomposition products, i.e. NH_x species, on Rh nanoparticles, produced by spincoating from a RhCl₃ solution in water followed by reduction. A silicon ATR crystal with a hydroxilated SiO₂ layer acts as the support for the nanoparticles. Upon exposure to NH₃ in the vacuum chamber, NH₃ adsorbed to both silica and Rh is detected (sensitivity ∼5 × 10⁻⁵ absorbance units). Interaction of the NH₃ with the silica OH groups is observed around ∼2840 cm⁻¹ in combination with peaks showing the disappearance of unperturbed OH vibrations between 3500 and 3700 cm⁻¹. In addition, NH bend vibrations at 1634 cm⁻¹ and NH stretch vibrations at 3065 and 3197 cm⁻¹ are observed for substrate temperatures between 20 and 100 °C. The latter two correspond to NH on Rh, as verified with a sample without Rh, and probably correspond to undecomposed NH₃. Moreover, they remain after evacuation, suggesting strongly bound species. For a substrate temperature of 75 and 100 °C, additional NH stretch peaks at 3354 and 3283 cm⁻¹ are observed, possibly due to NH₂ intermediates, indicating NH₃ decomposition. It is shown that ATR-FTIR can contribute to the sensitive detection of adsorption and decomposition of gaseous species on realistic planar model catalysts.     

Pre-treatments applied to oxidized aluminum surfaces to modify the interfacial bonding with bis-1,2-(triethoxysilyl)ethane (BTSE): Part I. High-purity Al with native oxide

A remote microwave-generated H₂ plasma and heating to 250 °C were separately used to modify high-purity oxidized aluminum surfaces and to assess whether these treatments can help enhance adhesion with bis-1,2-(triethoxysilyl)ethane (BTSE) coatings. Different initial oxide surfaces were considered, corresponding to the native oxide and to surfaces formed by the Forest Products Laboratory (FPL) treatment applied for either 15 or 60 min. BTSE is applied from solution at pH 4, and competing processes of etching, protonation (to form OH groups) and coupling (to form AlOSi interfacial bonds) occur at the solid-liquid interface. Scanning electron microscopy (SEM) was used to determine how the topographies of the modified Al surfaces changed with the different pre-treatments and with exposure to a buffer solution of pH 4. Secondary-ion mass spectrometry (SIMS) was used to determine the direct amount of AlOSi interfacial bonds by measuring the ratio of peak intensities 71-70 amu, while X-ray photoelectron spectroscopy (XPS) was used to determine the overall strength of the silane coating adhesion by measuring the Si 2p signals before and after application of an ultrasonic rinse to the coated sample. Measured Al 2p and O 1s spectra helped assess how the different pre-treatments modified the various Al oxidized surfaces prior to BTSE coating. Pre-treated samples that showed increased AlOSi bonding after BTSE coating corresponded to surfaces, which did not show evidence of significant etching after exposure to a pH 4 environment. This suggests that such surfaces are more receptive to the coupling reaction during exposure to the BTSE coating solution. These surfaces include all H₂ plasma-treated samples, the heated native oxide and the sample that only received the 15 min FPL treatment. In contrast, other surfaces that show evidence of etching in pH 4 environments are samples that received lower amounts of AlOSi interfacial bonding. Overall, heating improved the BTSE adhesive bonding for the native Al oxide, while H₂ plasma treatment improved the BTSE bonding for surfaces that had initially been FPL-treated for 15 and 60 min.     

The surface modification of nanoporous SiOx thin films with a monofunctional organosilane

The surfaces of nanostructured, porous SiO_x/Si (air-oxidized Si) and SiO_x thin films, deposited by excimer laser ablation in He and He + O₂ gas ambients, respectively, have been modified by the deposition of a monofunctional organosilane. They were characterized using photoacoustic Fourier-transform infrared (FTIR) X-ray photoelectron (XPS) spectroscopies, and field-emission scanning electron microscopy (FESEM). Photoacoustic FTIR analysis indicates that the organosilane has hydrolyzed to form a silanol, which has chemically reacted with SiO_x through its surface silanol (SiOH) group, to form siloxane (SiOSi) structures. An enhanced IR spectral signal is found, due to the expansion and contraction of both the pores of the solid and the gas within them.     

UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications

The synergistic effects of NH₃ ambient and ultraviolet illumination on the dielectric properties of hafnia based gate dielectrics are reported in this paper. The films were processed at relatively low temperatures (∼400 °C) by pulsed laser ablation and UV oxidation technique. UV illumination and the NH₃ ambient created a thin and a denser interfacial layer (at the film-Si interface) comprised of HfSiON bonding. As a result of the interfacial layer modification, a leakage current density lower than 10⁻⁴ A/cm² and a dielectric constant of ∼21.7 were extracted from the best samples processed in NH₃ and under UV illumination. The nitrogen doped HfO₂ also exhibited a thinner interfacial layer (∼12 Å) in comparison to the films processed without NH₃ ambient.     

Pulsed laser ablation of borax target in vacuum and hydrogen DC glow discharges

The aim of our experiment was to produce a material with BH bonds for applications in hydrogen storage and generation. By using KrF excimer laser (λ = 248 nm) ablation of borax (Na₂B₄O₇) target, thin films were deposited on KBr and silicon substrates. Ablation was performed both in vacuum and in hydrogen atmosphere. DC glow discharge technique was utilized to enhance hydrogen gas ionization. Experiments were performed using laser fluence from 5 to 20 J/cm². Films were deposited under gas pressure of 1 × 10⁻⁵ to 5 × 10⁻² mbar and substrate temperatures of 130-450 °C. Scanning electron microscopy analysis of films showed presence of circular particulates. Film thickness, roughness and particulates number increased with increase in laser fluence. Energy dispersive X-ray spectroscopy analysis shows that sodium content in the particulates is higher than in the target. This effect is discussed in terms of atomic arrangements (both at surface and bulk) in systems where ionic and covalent bonds are present and by looking at the increased surface/bulk ratio of the particulates with respect to the deposited films. The Fourier transform infrared spectroscopy measurements showed presence of BO stretching and BOB bending bonds. Possible reasons for absence of BH bonds are attributed to binding enthalpy of the competing molecules.     

Effect of oxidation on the optical and surface properties of AlGaN

The chemical properties of Al_xGa_1−xN surfaces exposed to air for different time periods are investigated by atomic force microscopy (AFM), photoluminescence (PL) measurement and X-ray photoelectron spectroscopy (XPS). PL and AFM results show that Al_xGa_1−xN samples exhibit different surface characteristics for different air-exposure times and Al contents. The XPS spectra of the Al 2p and Ga 2p core levels indicate that the peaks shifted slightly, from an AlN to an AlO bond and from a GaN to a GaO bond. All of these results show that the epilayer surface contains a large amount of Ga and Al oxides.     

Effect of defects on the reflectivity of Cr/C multilayer soft X-ray mirror at 4.48 nm

Cr/C is a promising material combination for multilayer mirror in the “near water window region” (4.4-6.7 nm). In the present paper, the effect of defects on the reflectivity of Cr/C soft X-ray multilayer mirror deposited by magnetron sputtering was studied. Formation of thin interlayer due to the interdiffusion, rough interface due to the non-sharp layer and contamination of O happened during the deposition process were found by a method combined by XPS, soft X-ray reflectivity at 4.48 nm and grazing incidence hard X-ray reflectivity at 0.154 nm. The XPS results show that both interlayers (Cr-on-C and C-on-Cr) are mixture composed of C sp2, C sp3, CO, CO, CrCr and CrO bondings. No chromium carbide was found at the interlayer probably due to the blocking of oxides’ formation. Through the analysis of X-ray reflectivity, we obtained the multilayer structure parameters (thickness and roughness) and optical constants of each layer at 4.48 nm. Based on those results, a further calculation was carried out. The result shows that the formation of the thin interlayer contributes little to the decrease of the reflectivity, the rough interface decreases the reflectivity most and the contaminant (O) not only decreases the reflectivity but also shifts the position of the peak.     

Interaction of amines with native aluminium oxide layers in non-aqueous environment: Application to the understanding of the formation of epoxy-amine/metal interphases

Interaction of propylamine (PA), 1,2-diaminoethane (DAE) or 3-aminomethyl-3,5,5-trimethylcyclohexylamine (isophorone diamine, IPDA) with native aluminium oxide layers in non-aqueous environment has been studied using time-resolved inductively coupled plasma optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS). The formation of several surface complexes has been evidenced. Monodentate and bidentate metal-bond surface complexes (MBSC) result from interactions between the amine terminations of the molecule and aluminium cations by donation of the N lone electron pair to the metal ion (Lewis-like mechanism leading to OAl?N bonds). Monodentate and bidentate hydrogen-bond surface complexes (HBSC) are due to interaction of the amino group with surface hydroxyl groups by protonation of the amine termination (Brønsted-like mechanism leading to the formation of AlOH?N bonds) or interaction with carbonaceous contamination (C_xO_yH_z?N bonds). Diamines can also form mixed complexes with one amino group forming an O-Al?N bond and the other group forming an AlOH…N or C_xO_yH_z?N bond. AlOH?N and C_xO_yH_z…N bonds are less stable under vacuum than OAl?N bonds, leading to partial desorption of the DAE molecules in vacuum and modification of the interaction modes. Only DAE and IPDA can lead to partial dissolution of the aluminium native (hydr)oxide films. A detailed mechanism of dissolution has been proposed based on the formation of mononuclear bidentate (chelate) MBSC by ligand exchange between the terminal η¹-OH and bridged μ₂-OH surface sites and the amino terminations of the molecule. The detachment of this complex from the surface is likely to be the precursor step to the formation of the interphase in epoxy-amine/metal systems.     

The cleavage of the methane CH bond over PdO/H-BEA: A density functional theory study

Cluster models were used to represent the β-type cationic sites of the protonated beta zeolite (H-BEA) and the loading of PdO on these sites. The properties of these clusters and the cleavage of methane CH bond over these clusters were studied using density functional theory (DFT) method. The stability of H-BEA was enhanced due to the formation of hydrogen bonds. After PdO loading, the Pd atom bonds to four oxygen atoms among which three H-BEA framework oxygen atoms are included to form an approximate planar structure with Pd in the centre. This structure is very similar to that of bulk PdO. The acidic proton of H-BEA and the oxygen atom of PdO participate in the cleavage of methane CH bond, indicating that PdO is the active species for the activation of methane. Over the clusters constructed in the present work, the calculated energy barriers for the cleavage of methane CH bond are in the region between 17.54 and 21.02 kcal mol⁻¹.     

Ab initio studies of electronic spectra of the linear aluminum-bearing carbon chains AlC2nH (n = 1-5)

Geometries and stabilities of the linear aluminum-bearing carbon chains AlC_2nH (n = 1-5) in their ground states have been explored by the DFT-B3LYP and RCCSD(T) methods. Structures of the X¹Σ⁺ and 1¹Π electronic states have also been optimized by the CASSCF approach. The studies indicate that these species have single-triple bond alternate pattern, AlCCCC?CCH, and the electronic excitation from X¹Σ⁺ to 1¹Π leads to the shortening of the AlC bonds. The vertical excitation energies of the 1¹Π ← X¹Σ⁺ and 2¹Π ← X¹Σ⁺ transitions for AlC_2nH (n = 1-5) have been investigated by the CASPT2, EOM-CCSD, and TD-B3LYP levels of theory with the cc-pVTZ basis set, respectively. CASPT2-predicted 1¹Π ← X¹Σ⁺ transition energies are 3.57, 3.44, 3.33, 3.26, and 3.21 eV, respectively. For AlC₂H, our estimate agrees very well with the experimental value of 3.57 eV. In addition, the AlC bond dissociation energies and the exponential-decay curves for these vertical excitation energies are also discussed.     

Electronic and geometric structure of methyl oxirane adsorbed on Si(1 0 0)2 × 1

Electronic and geometric properties of the adsorbate-substrate complex formed upon adsorption of methyl oxirane on Si(1 0 0)2 × 1 at room temperature is reported, obtained with synchrotron radiation-induced valence and core-level photoemission. A ring-opening reaction is demonstrated to occur, followed by a five-membered ring formation involving two of the Si surface atoms bound to a surface dimer. Core-level photoemission spectra support the ring-opening reaction and the SiO and SiC bond formation, while from the valence spectra a more extended molecular fragmentation can be ruled out. We discuss the most likely geometry of the five-membered ring.     

Particle size reduction and enhanced diffusion of Fe and Pt atoms in FePt-C granular films by N addition

N-doped FePt-C nanocomposite films were fabricated using facing-target sputtering method under different N₂ partial pressures (P_N) at room temperature. Annealing at 650 °C turns the amorphous films into ordered structures. Nitrogen doping not only make the ordering of FePt particles easier than the ordering in FePt-C films, due to the enhanced diffusivity of Fe and Pt atoms, but also effectively limits the growth of the FePt particles during the thermal induced ordering, especially for the annealed films fabricated at P_N = 40%, where the average size of well-isolated FePt particles is only ∼8 nm. The particle size reduction and the enhanced diffusion of Fe and Pt atoms can be ascribed to the desorption of doped N atoms and dissociation of FeN bonds during annealing. The room-temperature coercivity of the samples decreases with the P_N due to the particle size reduction and thus the enhancement of the thermal agitation for small particles during the magnetizing procedure.     

Surface modification of poly(propylene carbonate) by oxygen ion implantation

Poly(propylene carbonate) (PPC) was implanted by oxygen ion with energy of 40 keV. The influence of experimental parameters was investigated by varying ion fluence from 1 × 10¹² to 1 × 10¹⁵ ions/cm². XPS, SEM, surface roughness, wettability, hardness, and modulus were employed to investigate structure and properties of the as-implanted PPC samples. Eight chemical groups, i.e., carbon, CH, COC, CO, OCO, CO, , and groups were observed on surfaces of the as-implanted samples. The species and relative intensities of the chemical groups changed with increasing ion fluence. SEM images displayed that irradiation damage was related strongly with ion fluence. Both surface-recovering and shrunken behavior were observed on surface of the PPC sample implanted with fluence of 1 × 10¹⁵ ions/cm². As increasing ion fluence, the surface roughness of the as-implanted PPC samples increased firstly, reached the maximum value of 159 nm, and finally decreased down the minimum value. The water droplet contact angle of the as-implanted PPC samples changed gradually with fluence, and reached the minimum value of 70° with fluence of 1 × 10¹⁵ ions/cm². The hardness and modulus of the as-implanted PPC samples increased with increasing ion fluence, and reached their corresponding maximum values with fluence of 1 × 10¹⁵ ions/cm². The experimental results revealed that oxygen ion fluence closely affected surface chemical group, morphology, surface roughness, wettability, and mechanical properties of the as-implanted PPC samples.     

Carbon monoxide adsorption on Pd-deposited Cu(1 1 0) surface: Infrared reflection absorption and temperature programmed desorption studies

We investigated carbon monoxide (CO) adsorption and desorption behaviors on 0.1-nm-, 0.15-nm-, and 0.3-nm-thick-Pd-deposited Cu(1 1 0) surfaces using infrared reflection absorption (IRRAS) and temperature-programmed desorption (TPD) spectroscopic methods. CO was exposed to the 0.1-nm-thick-Pd/Cu(1 1 0) surface at the substrate temperature of 90 K. The IR band attributable to CO bonded to Cu atoms emerged at 2092 cm⁻¹: the band was located at 2100 cm⁻¹ at saturation coverage, with a shoulder at 2110 cm⁻¹. In addition to these bands, weak absorptions attributable to the PdCO bonds appeared at 2050 and 1960 cm⁻¹. With increasing Pd thickness, the Pd related-bands became increasingly prominent. Particularly at the early stage of exposure, the band at 2115 cm⁻¹ became visible. The band at 2117 cm⁻¹ dominated the spectra all through the exposures for the 0.3-nm-thick-Pd surface. The TPD spectra of the surfaces showed two remarkable features at around 220-250 and 320-390 K, ascribable ,respectively, to CuCO and PdCO. The desorption peaks shifted to higher temperatures with increasing Pd thickness. Based on the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the Pd/Cu(1 1 0) surfaces.     

Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

In order to improve the photocatalytic activity, N-doped titanium oxide (TiO₂) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO₂ phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO₂ lattice to form TiON bonds. UV-vis spectra revealed the N-doped TiO₂ film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 °C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO₂. The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO₂ films in the range of visible light.     

Low temperature catalytic performance of nanosized TiNiO for oxidative dehydrogenation of propane to propene

Nanosized TiNiO catalysts prepared by a modified sol-gel method have been investigated in the oxidative dehydrogenation of propane (ODP) to propene. At 300 °C the yield to propene of 12.1% was obtained on 9.1 wt.% TiNiO catalyst with the selectivity of 43%. The continued variety of lattice parameter and variation of chemical value of nickel and titanium ion on the surface indicates that there are strong interactions of TiO₂ and NiO. The decreased low temperature oxygen desorption and the weaker reducibility seems to be responsible for the decreased activity and enhanced selectivity of propane oxidative dehydrogenation over TiNiO catalysts.     

Synthesis and structure of nitrogenated tetrahedral amorphous carbon films prepared by nitrogen ion bombardment

The tetrahedral amorphous carbon (ta-C) films with more than 80% sp³ fraction firstly were deposited by filtered cathode vacuum arc (FCVA) technique. Then the energetic nitrogen (N) ion was used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and structure of the films were analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy (XPS). The result shows that the bombardment of energetic nitrogen ions can induce the formation of CN bonds, the conversion of C-C bonds to CC bonds, and the increase of size of sp² cluster. The CN bonds are made of CN bonds and C-N bonds. The content of CN bonds increases with the increment of N ion bombardment energy, but the content of C-N bonds is inversely proportional to the increment of nitrogen ion energy. In addition, C≡N bonds are not existed in the films. By the investigation of AFM (atom force microscopy), the RMS (root mean square) of surface roughness of the ta-C film is about 0.21 nm. When the bombarding energy of N ion is 1000 eV, the RMS of surface roughness of the ta-C:N film decreases from 0.21 to 0.18 nm. But along with the increment of the N ion energy ranging from 1400 to 2200 eV again, the RMS of surface roughness of the ta-C:N film increases from 0.19 to 0.33 nm.     

Chemical reaction of sputtered Cu film with PI modified by low energy reactive atomic beam

Polyimide (PMDA-ODA) surface was irradiated by low energy reactive atomic beam with energy 160-180 eV to enhance the adhesion with metal Cu film. O₂⁺ and N₂⁺ ions were irradiated at the fluence from 5 × 10¹⁵ to 1 × 10¹⁸ cm⁻². Wetting angle 78° of distilled deionized (DI) water for bare PI was greatly reduced down to 2-4° after critical ion flounce, and the surface energy was increased from 37 to 81.2 erg/cm. From the analysis of O 1s core-level XPS spectra, such improvement seemed to result from the increment of hydrophilic carbonyl oxygen content on modified PI surface. To see more carefully correlation of the peel strength with interfacial reaction between Cu and PI, flexible copper clad laminate with Cu (9 μm)/Cu (200 nm) on modified PI substrate (25 μm) was fabricated by successive sputtering and electroplating. Firstly, peel strength was measured by using t-test and it was largely increased from 0.2 to 0.5 kgf/cm for Ar⁺ only irradiated PI to 0.72-0.8 kgf/cm for O₂⁺ or N₂O⁺ irradiated PI. Chemical reaction at the interface was reasoned by analyzing C 1s, O 1s, N 1s, and Cu 2p core-level X-ray photoelectron spectroscopy over the as-cleaved Cu-side and PI side surface through depth profiling. From the C 1s spectra of cleaved Cu-side, by the electron transfer from Cu to carbonyl oxygen, carbonyl carbon atom became less positive and as a result shifted to lower binding energy not reaching the binding energy of C₂ and C₃. The binding energy shift of the peak C₄ as small as 1.7 eV indicates that carbonyl oxygen atoms were not completely broken. From the analysis of the O 1s spectra, it was found that new peak at 530.5 eV (O₃) was occurred and the increased area of the peak O₃ was almost the same with reduced area of the peak carbonyl oxygen peak O₁. Since there was no change in the relative intensity of ether oxygen (O₂) to carbonyl oxygen (O₁), and thus O₃ was believed to result from Cu oxide formation via a local bonding of Cu with carbonyl oxygen atoms. Moreover, from X-ray induced Auger emission spectra Cu LMM which was very sensitive to chemical bonding, Cu oxide or CuOC complex formation instead of CuNO complex was clearly identified by the observation of the peak at 570 eV at higher 2 eV than that of metal Cu. In conclusion, when Cu atoms were sputtered on modified PI by low energy ion beam irradiation, it can be suggested that two Cu atoms locally reacted with carbonyl oxygen in PMDA units and formed Cu⁺O⁻C complex linkage without being broken from carbon atoms and thus the chemically bound Cu was in the form of Cu₂O.