Quantitative and high mass ToF-SIMS studies of siloxane segregation in hydrogel polymers using cryogenic sample handling techniques

This paper examines the capabilities of cryogenic sample handling to examine composition and structure of hydrogel materials where siloxane components are central to the analysis. XPS analysis of multicomponent polymers with cryogenic sample handling following exposure to aqueous environments has revealed the composition and kinetics of near surface reorganization for siloxane and fluorocarbon containing polymers. In this study we report results from a ToF-SIMS protocol for cryogenic sample handling applied to the analysis of surface changes upon hydration/dehydration of hydrogel polymers. Comparison of results from angle dependent XPS and ToF-SIMS are discussed for a range of commercial soft contact lens materials. Both methods detected changes in surface chemistry between the hydrated (frozen) and dehydrated surfaces. Analysis of the hydrated surfaces detected polymer components indicative of the commercial formulation as well as ice clusters. Analysis of the dehydrated materials detected changes in surface chemistry relative to the hydrated surface in addition to loss of water due to sample dehydration. A quantitative standard additions method for ToF-SIMS data was used to determine submonolayer amounts of PDMS impurities at the surface of the hydrogels. ToF-SIMS analysis of a series of seven poly (allyl methacrylate-g-dimethylsiloxane), AMA-g-DMS, graft copolymers in the hydrated state revealed high mass oligomeric ion distributions for systems with bulk PDMS content greater than 25 wt.%. This marks the first time that detection of high mass oligomeric ion distributions from hydrated (frozen) surfaces has been reported. Analysis of the dehydrated surface detected formation of high mass oligomeric ion distributions for systems with PDMS bulk content greater than 15 wt.%, but only detected these ion distributions in wet (frozen) samples when the bulk concentration was greater than 25 wt.%.     

非均匀加热立式螺旋管内沸腾传热恶化特性研究

本文主要开展非均匀加热螺旋管内沸腾传热恶化特性实验研究。实验参数范围为:热流密度15~55 kW·m^-2;质量流速190~400 kg·m^-2·s^-1;压力0.8~1.1 MPa。实验包括一个均匀加热实验段及两个非均匀加热实验段,三个实验段尺寸一致,不均匀度分别为1.0,1.2和1.4。实验过程中共获得三种壁温飞升现象,而且发现随着质量流速及不均匀度的增大传热恶化位置逐渐向内侧管圈偏移,并由此导致非均匀加热螺旋管内初始烧干干度随着质量流速的变化规律与均匀加热螺旋管恰好相反。     

An Experimental Investigation of Forced Convection Heat Transfer from a Coiled Heat Exchanger Embedded in a Packed Bed

Forced convection heat transfer from a helically coiled heat exchanger embedded in a packed bed of spherical glass particles was investigated experimentally. With dry air at ambient pressure and temperature as a flowing fluid, the effect of particle size, helically coiled heat exchanger diameter, and position was studied for a wide range of Reynolds numbers. It was found that the particle diameter, the helically coiled heat exchanger diameter and position, and the air velocity are of great influence on the convective heat transfer between the helically coiled heat exchanger and air. Results indicated that the heat transfer coefficient increased with increasing the air velocity, increasing helically coiled heat exchanger diameter, and decreasing the particle size. The highest heat transfer coefficients were obtained with the packed-bed particle size of 16 mm and heat exchanger coil diameter of 9.525 mm (1/4 inch) at a Reynolds number range of 1,536 to 4,134 for all used coil positions in the conducted tests. A dimensionless correlation was proposed for Nusselt number as a function of Reynolds number, particle size, coil size, and coil position.     

Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films

ABSTRACT

The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.     

立式螺旋管汽液两相流沸腾传热恶化实验研究

本文实验研究了低质量流速(500～800 kg·m~(-2)·s~(-1))下的立式螺旋管临界热负荷,对沸腾传热恶化壁温特性和螺旋管临界热负荷影响因素进行分析.并同前人工作汇总,以流量,压力和临界干度为参数,建立了基于局部条件假设的立式螺旋管临界热负荷查询表(Look-Up-Table),共272个点.压力范围6.5～21 MPa,质量流速范围500～1800 kg·m~(-2)·s~(-1).     

F8BT薄膜表面形貌及与Al形成界面的电子结构和反应

基于共轭聚合物光电器件的性能与聚合物的表面形貌、分子取向、以及与金属电极形成的界面结构密切相关. 本文利用原子力显微镜(AFM)、同步辐射光电子能谱(SRPES)和近边X射线吸收精细结构谱(NEXAFS)等, 研究了聚(9, 9-二辛基芴并苯噻二唑)(F8BT)薄膜的表面形貌、分子取向及其与Al 电极形成界面过程的结构变化. 结果表明, 在略低于F8BT玻璃转变温度(T_g=130 ℃)条件下对F8BT薄膜进行退火, 可明显增加薄膜的表面粗糙度, 薄膜中F8BT 的分子取向角约为49°, 9, 9-二辛基芴单元(F8)与苯噻唑单元(BT)几乎在同一平面. 在Al/F8BT 界面形成过程中, Al与F8BT中的C, N和S均发生不同程度的化学反应, 并导致价带结构和未占据分子轨道(LUMO)态密度的变化. Al对F8BT进行n型掺杂引起F8BT能带弯曲的同时, 未占据能级被部分占据, 更多的电子将被注入到LUMO+1中. 通过考察价带电子结构、芯能级位移及二次截止边的变化, 绘制了清晰的Al/F8BT界面能级图.     

Influence of metallic coatings on the photoluminescence properties of ZnO nanowires

We report on low‐temperature photoluminescence studies of ZnO nanowires coated with thin metallic films. For all analyzed metals (Al, In, Au, Ni, Cu), we find an increased relative intensity of the green deep‐level emission. This is accompanied by a significant reduction of the relative intensity of the surface exciton band. The observed effects are most likely related to the formation of metal induced gap states in the surface region of the ZnO nanowires. A model for the band structure in the surface region of the metal‐coated nanowires is proposed that successfully explains the changes in the photoluminescence spectra after the coating process. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

卧式螺旋管内汽液两相流不稳定性试验研究

本文在中、低压汽水试验台上对卧式螺旋管内汽液两相流动不稳定性进行了详细的试验研究，获得了各类脉动发生的界限及各主要参数对脉动的影响规律，并在无固次分析的基础上，给出了密度波脉动起始边界的预报关系式。     

Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films

In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B⁺, B³⁺) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 × 10¹⁶ cm⁻²). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B³⁺ ions and 0.7 eV for irradiated films by B⁺ ions.     

Electrical and optical properties of pure and KClO3-doped P(MMA-CO-4VPNO) polymer electrolyte films

Ion-conducting polymer electrolyte films based on a copolymer poly(methyl-methacrylate-co-4-vinyl pyridine N-oxide) [P(MMA-CO-4VPNO)] complexed with potassium chlorate (KClO₃) were prepared by solution cast technique. The complexation of KClO₃ salt with the polymer was confirmed by X-ray diffraction and infrared studies. The electrical conductivity and optical absorption of pure and KClO₃-doped P(MMA-CO-4VPNO) polymer electrolyte films have been studied. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The variation of electrical conductivity with temperature shows two regions with two activation energies. Optical properties like direct band gap, indirect band gap, and optical absorption edge were investigated for pure and doped polymer films in the wavelength range 300–550 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. The behavior is in an agreement with the activation energies obtained from the conductivity data.     

FTIR‐ATR Study of pH Effects on Egg Albumin Secondary Structure

Abstract

The pH effects on the secondary structures of egg albumin were investigated using Fourier transform infrared–attenuated total reflection (FTIR‐ATR) technique with a single‐bounce diamond crystal. The albumin was first denatured in a series of solutions with pH ranging from 1 to 12. The albumin film was then cast on the ATR crystal from the albumin solution for the IR spectrum collection. Significant secondary structure spectral differences were observed for these films. The findings are presented in terms of the shape and position of the albumin amide I band between 1600 and 1700 cm^?1.     

Sol–gel concave micro-lens arrays fabricated by combining the replicated PDMS soft mold with UV-cured imprint process

Photosensitive TiO₂/organically modified silane organic–inorganic hybrid thin films were synthesized by combining a low-temperature sol–gel process with a spin-coating method. Optical transmittance properties and the photochemical activities of the planar hybrid films were characterized by UV–Visible spectroscopy and Fourier transform infrared spectroscopy. Advantages for fabrication of the concave micro-lens arrays (MLAs) based on the photosensitive hybrid films were demonstrated by using the replicated polydimethylsiloxane (PDMS) soft mold as the imprint mold and a UV soft imprint technique. Morphological and surface profile properties of the master, the PDMS soft molds and the as-fabricated sol–gel concave MLAs were observed by scanning electron microscopy and laser confocal scanning microscopy. Contact angles of water on the PDMS soft molds baked at different temperatures were studied. Optical imaging properties of the as-fabricated concave MLAs were confirmed by a self-made optical test system. Results indicate that the as-prepared photo-patternable hybrid materials have great applicability for the fabrication of photonic components, thus providing an effective method to fabricate concave MLAs based on the as-synthesized hybrid films by combining the UV-cured imprint technique with the replicated PDMS soft mold, which has advantages of simplicity, cost-effective and mass production and potential application in industry production.     

2-烷基TCNQ的红外光谱和结构研究——CH_2剪式振动的双峰与晶体场分裂的关系(英文)

测量了2-烷基TCNQ(C8TCNQ,C12TCNQ,C18TCNQ)浇铸膜的红外光谱,发现这类化合物的红外CH2剪式振动在1 471和1 462 cm-1处显示2个峰。这2个峰的强度比(I1 471/I1 462)随着烷基链的长度增加而明显减少。另外,来自CH2的1 471 cm-1吸收峰与来自TCNQ环的1 529 cm-1吸收峰的相对强度随着碳链的长度增加而不发生变化。CnTCNQ系列化合物的红外光谱CH2的剪式振动行为与长链脂肪酸中CH2行为很不相同。在长链脂肪酸中,晶体场效应导致了剪式振动分裂。考虑C12TCNQ的晶体结构,而将1 471cm-1峰归属为非叉指对接的碳链,将1 462 cm-1峰归于叉指对接的碳链,双峰的出现与晶体场分裂无关。并且得到烷基TCNQ中,非叉指对接的碳链的长度与碳链总长度无关的结论。     

Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

The effect of implantation of Ba, P, B, and alkali element ions with a low energy (E ₀ < 5 keV) on the electron structure of a thin surface region of p- and n-type Si(111) single crystals is investigated by photoelectron and secondary electron-electron spectroscopy. It is shown that irrespective of the ion species, high-dose ion implantation leads to a sharp narrowing of the band gap in silicon, which can be explained by overlapping of the wavefunctions of electrons of impurity atoms and the formation of the impurity subband overlapping with the allowed band. After implantation thermal annealing, SiP, BaSi, and SiB3 films of nano-sized thickness are obtained for the first time. Optimal regimes of ion implantation and subsequent annealing for the formation of silicide films are determined, and their electron structure is investigated.     

Tuning the absorption band in the THz range of YBCO films patterned by means of HEHI lithography

High energy heavy ion lithography was used for modulating through implanted nanostructures the local structural and electrical properties of high temperature superconducting YBa₂Cu₃O₇ films. The controlled reduction of the critical temperature of irradiated films results in a localization into heavy ion patterned micro-regions of the electrical dissipation, viable in a given temperature range and driven by ion fluence, bias current and applied magnetic field. The measurement of the response of such nanostructured YBCO films to electromagnetic radiation in the infrared band (MIR–FIR region) is presented. It turns out that the ion induced structural modification of both superconducting film and substrate is actually enabling the infrared optical absorption of YBCO, so that the viability of low noise THz detection above the liquid nitrogen temperature is shown.     

Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit. One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors. High-doped Ti with a concentration of 10²⁰ cm^-3-10²¹ cm^-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA). Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit, the main requirement for the formation of an impurity intermediate band. Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology. By using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOI substrate, suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR. The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum.     

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrate

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of OFETs with polymeric dielectric on the flexible substrate was proposed. The desired polymeric semiconductor patterns were fabricated on the flat polydimethylsiloxane (PDMS) surface with a selective lift-off method we proposed previously. The isolated and well defined polymeric semiconductor patterns left on the flat PDMS surface can be further transferred to the gate polymeric dielectric surface by polymer bonding lithography due to the low interfacial energy of PDMS. The transistor fabricated with this ‘dry’ process has a higher field-effect mobility compared with that using spin coated semiconductor layer.     

退火对含氮氟非晶碳膜结构及光学带隙的影响

采用射频等离子体增强化学气相沉积法,在不同条件下制备了含氮氟非晶碳膜,着重考察了退火温度对膜结构和光学带隙的影响. 研究发现：在350℃时,膜仍很稳定,当退火温度达到400℃时,其内各化学键的相对含量发生很大的改变. 膜的光学带隙随着退火温度的升高而增大,红外和拉曼光谱分析显示其原因是：退火使得膜内F的相对浓度降低,sp²相对含量升高,导致σ-σ^*带边态密度降低. 关键词： 含氮氟非晶碳膜 退火 光学带隙     

Optical and electrical properties of swift heavy ion beam-irradiated polycarbonate/polystyrene bilayer films

Polycarbonate/polystyrene bilayer films prepared by solvent-casting method were irradiated with 55 MeV carbon ion beam at different fluences ranging from 1×10¹¹ to 1×10¹³ ions cm^?2. The structural, optical, surface morphology and dielectric properties of these films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, optical microscopy and dielectric measurements. The XRD pattern shows that the percentage of crystallinity decreases while inter-chain separations increase with ion fluence. UV–visible spectroscopy shows that the energy band gap decreases and the number of carbon atoms in nanoclusters increase with the increase in ion fluences. The refractive index is also found to decrease with the increase in the ion fluence. Optical microscopy shows that after irradiation polymeric bilayer films color changes with ion fluences. The FTIR spectra evidenced a very small change in cross-linking and chain scissoring at high fluence. Dielectric constant decreases while dielectric loss and AC conductivity increase with ion fluences.     

氢化纳米硅薄膜中氢的键合特征及其能带结构分析

对氢化纳米硅薄膜中氢的键合特征和薄膜能带结构之间的关系进行了研究.所用样品采用螺 旋波等离子体化学气相沉积技术制备，利用Raman散射、红外吸收和光学吸收技术对薄膜的 微观结构、氢的键合特征以及能带结构特性进行了分析.Raman结果显示不同衬底温度下所生 长薄膜的微观结构存在显著差异，从非晶硅到纳米晶硅转化的衬底温度阈值为200℃.薄膜中 氢的键合特征与薄膜的能带结构密切相关.氢化非晶硅薄膜具有较高的氢含量，因键合氢引 起的价带化学位移和低衬底温度决定的结构无序性，使薄膜呈现较大的光学带隙和带尾宽度 .升 关键词： 氢化纳米硅 螺旋波等离子体 能带结构