Frequency-dependent linear and non-linear response properties of single carrier quantum dots: Role of effective mass and anharmonicity in the confinement potential

We explore the pattern of frequency-dependent linear and non-linear optical (NLO) response of one electron quantum dots harmonically confined in two dimensions. For some fixed values of transverse magnetic field strength (ω_c), and harmonic confinement potential (ω₀), the influence of effective mass (m^*) of the system and the symmetry breaking anharmonic interaction on the frequency-dependent linear (α), and the first (β), and second (γ) NLO responses of the dot is computed through linear variational route. The investigation reveals interesting roles played by the anharmonic interaction and effective mass in modulating the response properties.     

Spin accumulation in coupled quantum dots with ferromagnetic and superconducting electrodes

We theoretically investigate the spin accumulation in two parallel coupled quantum dots (QDs) with ferromagnetic and superconducting electrodes. Due to the ferromagnetic lead, the spin accumulation appears on the resonance of Andreev reflection. The spin accumulation in each of the two QDs can be controlled by the gate voltage. The sign of the spin accumulation is also controllable by tuning the bias. Furthermore, tuning the magnetic flux can exchange the amplitude of the spin accumulation in the two QDs. The Aharonov-Bohm oscillation effects also provides a way to control the spin accumulation of each QD.     

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.     

Classical limit of the Casimir entropy for scalar massless field

We study the Casimir effect at finite temperature for a massless scalar field in the parallel plates geometry in N spatial dimensions, under various combinations of Dirichlet and Neumann boundary conditions on the plates. We show that in all these cases the entropy, in the limit where energy equipartitioning applies, is a geometrical factor whose sign determines the sign of the Casimir force.     

The magnetoresistance effect in a nanostructure with the periodic magnetic barriers

The magnetoresistance (MR) effect is theoretically investigated in a periodic magnetically modulated nanostructure, which can be realized experimentally by depositing periodic parallel ferromagnetic strips on the top of a heterostructure. We find that there exists a significant conductance difference for electrons through the parallel (P) and antiparallel (AP) magnetization configurations, which results in a considerable magnetoresistance effect. We also find that the magnetoresistance effect depends not only on the temperature but also on the number of the periodic magnetic barriers.     

Discrimination of photoblinking and photobleaching on the single molecule level

Wide field observation of individual dye molecules have been performed to study fluorescence intermittency. We demonstrate a data analysis scheme, which enables us to quantify the decay of the ensemble intensity which is due to on/off-blinking of the molecules (photophysical bleaching) by getting rid of the effects of photochemical degradation of the dye (photochemical bleaching). Under the conditions of our experiments, photophysical and thus reversible bleaching is the dominant of the two bleaching mechanisms.     

Etching and forward transfer of fused silica in solid-phase by femtosecond laser-induced solid etching (LISE)

We present a femtosecond laser-based technique for etching and forward transfer of bulk transparent materials in solid-phase. Femtosecond laser pulses with were focused through a fused silica block onto an absorbing thin film of Cr. A constraining Si wafer was pressed into tight contact with the Cr film to prevent lift-off of the film. A combination of the high temperature and pressure of the Cr, and compressive stress from the Si, resulted in etching of smooth features from the fused silica by cracking. Unlike in conventional ablative or chemical etching, the silica was removed from the bulk as single solid-phase pieces which could be collected on the Si. Using this so-called laser-induced solid etching (LISE) technique, 1-2 m deep pits and channels have been produced in the silica surface, and corresponding dots and lines deposited on the Si. The threshold fluence for etching was found to be with duration pulses. The morphology of the etched features are investigated as functions of fluence and exposure to multiple pulses.     

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (1 0 0) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 °C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 °C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.     

The first measured Mn I Stark widths

The shapes of the astrophysically interesting neutral manganese (Mn I) resonance spectral lines (403.075, 403.306, 403.448, 279.481, 279.826 and 280.108 nm) have been observed together with six other prominent Mn I lines in the laboratory helium plasma at a 47 000 K electron temperature and electron density. With these plasma parameters the Stark broadening has been found to be an important mechanism in the Mn I line shape formation. Our measured Mn I Stark widths (W) are the first data in the literature. Stark widths are compared with line hyperfine structure splittings (Δ_hfs). At above mentioned helium plasma conditions the line broadening due to hyperfine structure splitting of the lines is less than that of the Stark and Doppler broadening for the case of the Mn I lines under investigation. We estimate that at electron densities below and electron temperatures below 4000 K the components in the hyperfine structure play an important role in the mentioned Mn I line shape formation.     

Structural modifications of diamond like carbon films induced by MeV nitrogen ion irradiation

Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N⁺ ions at fluences of 1×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm². Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp² bonding. XPS results also show a monotonic increase of sp²/sp³ hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×10¹⁵ ions/cm² show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure.     

Decay rate with coordinate-dependent diffusion coefficients

Using a master equation for the reduced density matrix of open quantum system, the influence of coordinate-dependent microscopical diffusion coefficients on the decay rate from a potential well is studied. For different temperatures, frictions, heights of barrier and ratios of stiffnesses of the potential in the minimum and on the top of the barrier, the quasistationary decay rates are obtained with the sets of coordinate-dependent and -independent microscopical diffusion coefficients, and coordinate-dependent phenomenological diffusion coefficients.     

Microscopic modeling of photoluminescence of strongly disordered semiconductors

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.     

Chemically abrupt interface between Ce oxide and Fe films

A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy.     

Effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer on Au(1 1 1)

The effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer (SAM) on Au(1 1 1) are studied with scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The STM and XPS results show that proton bombardment with proton energy as low as 2 eV can induce cross-linking of the adsorbed alkanethiols and transform the original ordered SAM lattice to an array of nanoclusters of the cross-linked alkanethiols. For a bombardment at 3 eV with a fluence of 3×10¹⁵ cm⁻², the typical cluster size is about 5 nm. In addition, the cluster size distribution is narrow, with no cluster larger than 8 nm. The cluster growth can be promoted by increasing the fluence at a fixed bombardment energy or increasing the energy at a fixed fluence. This indicates that surface diffusion of alkanethiols and cluster growth can be harnessed by the control of the bombardment energy and fluence.     

Contact and phonon scattering effects on quantum transport properties of carbon-nanotube field-effect transistors

We investigated the phonon scattering effects on the transport properties of carbon nanotube devices with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo formula within a tight-binding approximation. We studied the scattering effects of both the longitudinal acoustic and the optical phonons on the transport properties. The conductance of semiconducting nanotubes is decreased by the acoustic phonon, instead of the optical phonon. Furthermore, we clarified how the electron mobilities of the devices are affected by the acoustic phonon.     

MOCVD growth of spherical aggregates of SiC nanocrystallites

Spherical aggregates of SiC nanocrystallites can be grown in addition to SiC nanowires via metal organic chemical vapor deposition using methylvinyldichlorosilane as a source gas and Ni catalyst by controlling the growth temperature and the pressure of the source gas. Electron microscopy observations show that the aggregates are typically 300 nm in diameter, which consist of SiC nanocrystallites of about 5 nm in diameter. Electron diffraction reveals that the nanocrystallites have the 3C structure.     

Dynamics of electrons and holes at surfaces

We present ab initio calculation results for electron-phonon (e-ph) contribution to hole lifetime broadening of the surface state on Al(0 0 1). We show that e-ph coupling in this state is significantly stronger than in bulk Al at the Fermi level. It makes the e-ph decay channel very important in the formation of the hole decay in the surface state at . We also present the results for e-e lifetime broadening in a quantum-well state in 1 ML K/Cu(1 1 1). We show that this contribution is not negligible and is much larger than that in a surface state on Ag(1 1 1).     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Metallic nanosieves formed by ultra-short-pulse laser ablation

The formation of free-standing gold nanosieves by ablation with ultra-short laser pulses is demonstrated. Macroscopic areas are generated fast and efficiently by the application of a parallel production technique. The technique is based on a lens array formed by self-assembling quartz microspheres on a thin metal foil. The evaporated foils have a final thickness of 400 nm, and the hole spacing is set by the diameter of the microspheres (∼7 m) while the pore size is ∼700 nm. The characteristic spacing of the generated hole structure is verified by an optical diffraction technique.