Possibilities and limitations of high-resolution mass spectrometry in life sciences

We have applied time-of-flight secondary ion mass spectrometry (ToF-SIMS) and laser post-ionization secondary neutral mass spectrometry (laser-SNMS) to examine the immobilization process of PNA and its hybridization capability to unlabeled complementary DNA fragments, to characterize immobilized proteins, and to image intrinsic elements and molecules with subcellular spatial resolution in different types of frozen non-dehydrated biological samples.The possibilities and limitations of ToF-SIMS and laser-SNMS for imaging elements and molecules in biological samples are discussed. Furthermore possibilities for enhancing the detection sensitivity by using polyatomic and cluster primary ions and different laser post-ionization schemes, as well as ways of obtaining 3D molecular images from biological samples are described.The data shows that both ToF-SIMS and laser-SNMS are capable of imaging elements and molecules in complex biological samples and that they are very valuable tools in advancing applications in life sciences. It was found that cluster-ion bombardment is very useful for enhancing the molecular yield, while laser-SNMS resulted in much higher detection sensitivity for elements and specific molecules and is particularly well suited for imaging ultra-trace element concentrations in biological samples.     

Characterization and ion-induced degradation of cross-linked poly(methyl methacrylate) studied using time of flight secondary ion mass spectrometry

In this study, a series of random copolymers of methyl methacrylate (MMA) and ethylene glycol dimethacrylate (EGDMA) were prepared as surface-initiated polymer (SIP) films on silicon substrates using atom transfer radical polymerization. Positive and negative ion static time-of-flight secondary ion mass spectrometry (ToF-SIMS) was used to characterize SIP films with different MMA/EGDMA monomer ratios in an attempt to quantify their surface composition. However, matrix effects in the positive and negative ion modes led to preferential secondary ion generation from the EGDMA monomer and suppression of secondary ions characteristic of the MMA monomer, precluding accurate quantification using standard linear quantification methods. Ion-induced degradation of these films under 5 keV SF₅⁺ bombardment was also examined to determine the effect of cross-linking on the accumulation of ion-induced damage. Increasing incorporation of the EGDMA cross-linker in the SIP films decreased the sputter rate and increased the rate of damage accumulation under extended (>10¹⁴ ions/cm²) 5 keV SF₅⁺ bombardment. Comparison of the ion bombardment data with thermal degradation of cross-linked PMMA suggests that the presence of the cross-linker impedes degradation by depolymerization, resulting in ion-induced damage accumulation. The increased rate of ion-induced damage accumulation with increased cross-link density also suggests that polymers that can form cross-links during ion bombardment are less amenable to depth profiling using polyatomic primary ions.     

Molecular secondary ion formation under cluster bombardment: A fundamental review

A brief review is given regarding the application of cluster ion beams as desorption probes in molecular SIMS. The general observation is that the efficiency of secondary ion formation, particularly that of complex molecular species, is significantly enhanced if polyatomic projectiles are employed instead of atomic species. Apart from the sensitivity increase, cluster bombardment also appears to allow for molecular depth profiling studies without the accompanying damage accumulation normally associated with atomic projectiles. A few fundamental aspects are addressed in an attempt to highlight the physics behind these observations. It appears that much of the benefit associated with cluster bombardment is connected to the fact that these projectiles give access to very high sputter yields which are not accessible with atomic primary ions.     

Analysis of C60 and Cs sputtering ions for depth profiling gold/silicon and GaAs multilayer samples by time of flight secondary ion mass spectrometry

Time of flight secondary ion mass spectrometry (ToF-SIMS) depth profiles of several inorganic layered samples using Cs⁺ and C₆₀⁺ primary sputtering ions of different energies are compared to evaluate sputter yield and depth resolution. A gold/silicon model system is employed to study interfaces between metals and semiconductors, and multilayers of AlGaAs, Al, and InAs in GaAs are analyzed to explore the ability of C₆₀⁺ to analyze semiconductor interfaces in GaAs. Roughness measurements are reported to differentiate between different factors affecting depth resolution. The best depth resolution from all samples analyzed is achieved using 1 keV Cs⁺. However, C₆₀⁺ sputtering has advantages for analyzing conductor/insulator interfaces because of its high sputter yield, and for analyzing deeper heterolayers in GaAs due to lower sputter-induced roughness.     

High sputtering yields of organic compounds by large gas cluster ions

We measured the sputtering yield, surface roughness and surface damage of thin leucine films bombarded with Ar cluster ions and examined the usefulness of large gas cluster ions for the depth profiling of organic compounds. Ar cluster ion beams with a mean size of 2000 atoms/cluster and energies from 5 to 30 keV were used. Sputtering yields increased linearly with incident ion energy and were extremely high compared to inorganic materials. Surface damage was investigated by measuring positive secondary ions emitted from the leucine film before and after cluster ion irradiation. After irradiation the leucine surface became smoother. The yield ratio of protonated leucine ions to other fragment ions kept constant before and after Ar cluster ion irradiation. These results indicate that large gas cluster ions are useful for depth profiling of organic compounds.     

Dependence of cluster ion emission from uranium oxide surfaces on the charge state of the incident slow highly charged ion

The cluster ion yields and cluster ion distribution for highly charged ion sputtering have been measured for a uranium oxide target for Xe⁴⁴⁺\rm Xe^{44+}, Au^63,66,69+\rm Au^{63,66,69+} and Th⁷⁵⁺\rm Th^{75+} incident ions. The cluster yields exhibit a power law dependence on the cluster size with exponents increasing from -4 to -2.4 with increasing primary ion charge from 44+ to 75+. The power law exponent is also correlated with the total sputter yield.     

Investigation of molecular weight effects of polystyrene in ToF-SIMS using C60 and Au primary ion beams

In secondary ion mass spectrometry, polyatomic primary ion sources are known to enhance yields from many surfaces including polymers. In order to understand the fundamental causes for these increases, the enhancement as a function of material type and molecular weight needs to be delineated. In this article, we report results from a systematic investigation of polymeric films of polystyrene (PS) with varying molecular weights to examine the influence of the primary ion beam on the secondary ion yields in time of flight secondary ion mass spectrometry (ToF-SIMS). The masses of the polymers investigated ranged from 1000 to 20,000 Da, or from about n = 10 to 200 where n indicates the number of polymeric units in a polymer chain. The polymers had a narrow molecular weight range (PDI < 1.07). The multilayer polymeric films (10-30 nm) characterized by AFM were prepared by spin-casting onto silicon substrates and were analyzed using Au⁺ and C₆₀⁺ primary ion beams. The analysis with the two beams provided a useful comparison between atomic and polyatomic primary ion sources. Information gathered from this study provides insight into the role of molecular weight on the observed yield enhancement from polyatomic ion sources.     

Sputter yields of Mo,Ti, W,Al, Ag under xenon ion incidence

The sputter yield is an important material parameter not only for various surface treatment techniques, but also for electric spacecraft propulsion. Many satellite or thruster components might be subject of erosion due to energetic and/or related secondary ions. In order to estimate the lifetime of these components the sputter yield under xenon ion incidence has to be known in dependence on ion energy and incidence angle, mainly in the low energy region (i.e. below 1500 eV). However, for many materials related to electric propulsion the supply of sputter yield data in literature is quite poor. Therefore, in this study the sputter yields of molybdenum, titanium, tungsten, silver and aluminium was investigated under xenon ion incidence.     

Comparison of secondary ion intensity enhancement from polymers on silicon and silver substrates by using Au-TOF-SIMS

The usefulness of the usage of cluster primary ion source together with an Ag substrate and detection of Ag cationized molecular ions was studied from the standpoint to realize high sensitivity TOF-SIMS analysis of organic materials. Although secondary ions from polymer thin films on a Si substrate can be detected in a higher sensitivity with Au₃⁺ cluster primary ion compared with Ga⁺ ion bombardment, it was clearly observed that the secondary ion intensities from samples on an Ag substrate showed quite a different tendency from that on Si. When monoatomic primary ions, e.g., Au⁺ and Ga⁺, were used for the measurement of the sample on an Ag substrate, [M+Ag]⁺ ions (M corresponds to polyethylene glycol molecule) were detected in a high sensitivity. On the contrary, when Au₃⁺ was used, no intensity enhancement of [M+Ag]⁺ ions was observed. The acceleration energy dependence of the detected secondary ions implies the different ionization mechanisms on the different substrates.     

Quantitative study of oxygen enhancement of sputtered ion yields. I. Argon ion bombardment of a silicon surface with O2 flood

A novel quantification approach is applied to determine in situ the amount of surface oxygen within the sputtered particle escape depth during steady-state sputter depth profiling of silicon under simultaneous oxygenation with an oxygen flood gas or with an oxygen primary ion beam. Quantification is achieved by comparing the secondary ion intensities of ¹⁶O that is adsorbed or implanted at the Si surface with the measured peak intensities of a calibrated ¹⁸O ion implant used as a reference standard. Sputtered ion yields can thereby be related to surface oxygen levels. In the present work the dependences of the partial silicon sputter yield Y and of the positive and negative secondary ion useful yields UY(X^±) (X = B, O, Al, Si, P) on the oxygen/silicon ratio, O/Si, in the sputtered flux are studied for ⁴⁰Ar⁺ bombardment of Si with simultaneous O₂ flooding. The silicon sputter yield is found to decrease with increasing flood pressure and O/Si ratio by up to a factor of 3. Both positive and negative secondary ion yields are enhanced by the presence of oxygen at the silicon surface. The useful ion yield of Si⁺ scales non-linearly with the atom fraction of surface oxygen; this behavior is shown to invalidate models that suggest that Si⁺ ion yield enhancement is dominated either by isolated oxygen atoms or by formation of SiO₂ precipitates. In contrast a microscopic statistical model that assumes that local Si⁺ ion formation depends only on the number of oxygen atoms coordinated to the Si atom to be ejected fits the ion yield data quantitatively.     

Mass spectrometric characterization of DNA microarrays as a function of primary ion species

Recent studies have shown TOF-SIMS to be an appropriate method for the detailed examination of the immobilization process of PNA and its ability to hybridize to unlabeled complementary DNA fragments. Unlabeled single-stranded DNA was hybridized to Si wafer biosensor chips containing both complementary and non-complementary immobilized PNA sequences. The hybridization of complementary DNA could readily be identified by detecting phosphate-containing molecules from the DNA backbone. An unambiguous discrimination was achieved between complementary and non-complementary sequences.In order to optimize detection parameters, different primary ions were applied, including monoatomic ions (Bi⁺) as well as cluster ions (Bi₂⁺, Bi₃⁺, Bi₄⁺, Bi₃⁺⁺, Bi₅⁺⁺), and secondary ion yield behavior and formation efficiencies were studied. It was found that cluster primary ions resulted in a significantly increased yield of DNA-correlated fragments, enabling higher signal intensities and better secondary ion efficiencies.TOF-SIMS is undoubtedly a highly useful technique for identifying hybridized DNA on PNA biosensor chips. It is suitable for studying the complexity of the immobilization and hybridization processes and may provide a rapid method for DNA diagnostics. With the absence of the labeling procedure and the simultaneous increase of the phosphate signal as a result of increasing DNA sequence length, this technique comes to be especially useful for the direct analysis of genomic DNA.     

Imaging subcellular features of a sectioned rat brain using time-of-flight secondary ion mass spectrometry and scanning probe microscopy

Coronal sections of unfixed rat brain samples were prepared on a flat substrate in order to reveal hippocampal formation (CA1-4 pyramidal neurons) and adjacent neocortical white matter. We demonstrate the feasibility of using surface sensitive techniques such as time-of-flight secondary ion mass spectrometry (ToF-SIMS) and scanning probe microscopy (SPM) to probe lipid distribution, as well as the subcellular features of neurons. In the same anatomical areas, the phase shift image in SPM is especially useful in revealing the cross-section of subcellular structures. We show that the phase shift images reveal distinctive subcellular features and ion images of CN⁻ and PO₂⁻ fragments from ToF-SIMS appear to define some of the subcellular features.     

Model multilayer structures for three-dimensional cell imaging

The prospects for SIMS three-dimensional analysis of biological materials were explored using model multilayer structures. The samples were analyzed in a ToF-SIMS spectrometer equipped with a 20 keV buckminsterfullerene (C₆₀⁺) ion source. Molecular depth information was acquired using a C₆₀⁺ ion beam to etch through the multilayer structures at specified time intervals. Subsequent to each individual erosion cycle, static SIMS spectra were recorded using a pulsed C₆₀⁺ ion probe. Molecular intensities in sequential mass spectra were monitored as a function of primary ion fluence. The resulting depth information was used to characterize C₆₀⁺ bombardment of biological materials. Specifically, molecular depth profile studies involving dehydrated dipalmitoyl-phosphatidylcholine (DPPC) organic films indicate that cell membrane lipid materials do not experience significant chemical damage when bombarded with C₆₀⁺ ion fluences greater than 10¹⁵ ions/cm². Moreover, depth profile analyses of DPPC-sucrose frozen multilayer structures suggest that biomolecule information can be uncovered after the C₆₀⁺ sputter removal of a 20 nm overlayer with no appreciable loss of underlying molecular signal. The experimental results support the potential for three-dimensional molecular mapping of biological materials using cluster SIMS.     

Secondary ion mass spectra of alkali halides

Mass spectra of positive and negative secondary ions from various alkali halides have been measured in the Manitoba time-of-flight mass spectrometer. The ions were produced by Cs⁺ and K⁺ bombardment at primary ion energies of 3 to 19 keV for the positive spectra, and 11 to 28 keV for the negative spectra. The ions measured were those emitted within a time interval ～ 20 ns after the primary ion impact. The secondary ion yields are strongly dependent on the sample composition and treatment; prior irradiation may change the yield by an order of magnitude or more. The secondary ion yields also depend strongly on the energy loss of the primary ion, but the ratio of yields of different cluster ions from a given target is almost independent of this parameter. The results appear to be consistent with models in which the clusters are ejected directly from the target, but do not determine whether or not they possess the original surface structure. The results may also be described by a recombination model if the recombination is essentially complete.     

加速器束流脉冲化及氢二次离子发射研究

详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用. 利用飞行时间法研究了碳纳米管在不同能量的Si和Si2团簇离子轰击下氢二次离子的发射. 实验结果表明， 在每个原子质量单位的速度为2.5×108 cm/s以上， Si和Si2离子引起的氢二次离子的发射主要受电子阻止过程控制； 在每个原子质量单位的速度为2.5×108 cm/s以下和Si2团簇离子轰击的情况下， 氢二次离子的发射产额明显增加， 团簇离子在靶表面的核能损增强效应起主要作用. The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight(TOF ) setup is described. Secondary ion emissions from carbon nanotubes under bombardments of MeV Si and Si2 clusters are measured by using TOF. The measurements indicate that the yield of the secondary ion emissions of hydrogen increases with increasing energy of Si and it is attributed to the electronic processes. The yield of the secondary ions of hydrogen decreases with increasing energy of Si2 clusters and the enhancement of nuclear energy loss of cluster constituents at the surface of sample plays a more significant role in the secondary ion emission of hydrogen at the low energies.     

Metal-assisted SIMS and cluster ion bombardment for ion yield enhancement

In addition to structural information, a detailed knowledge of the local chemical environment proves to be of ever greater importance, for example for the development of new types of materials as well as for specific modifications of surfaces and interfaces in multiple fields of materials science or various biomedical and chemical applications. But the ongoing miniaturization and therefore reduction of the amount of material available for analysis constitute a challenge to the detection limits of analytical methods. In the case of time-of-flight secondary ion mass spectrometry (TOF-SIMS), several methods of secondary ion yield enhancement have been proposed. This paper focuses on the investigation of the effects of two of these methods, metal-assisted SIMS and polyatomic primary ion bombardment. For this purpose, thicker layers of polystyrene (PS), both pristine and metallized with different amounts of gold, were analyzed using monoatomic (Ar⁺, Ga⁺, Xe⁺, Bi⁺) and polyatomic (SF₅⁺, Bi₃⁺, C₆₀⁺) primary ions. It was found that polyatomic ions generally induce a significant increase of the secondary ion yield. On the other hand, with gold deposition, a yield enhancement can only be detected for monoatomic ion bombardment.     

Characterisation of human hair surfaces by means of static ToF-SIMS: A comparison between Ga and C60 primary ions

This study deals with the secondary ion yield improvement induced by using C₆₀⁺ primary ions instead of Ga⁺ ones to characterize human hair surfaces by ToF-SIMS. For that purpose, a bunch of hair fibres has been analysed with both ion sources. A high improvement is observed for the detection of amino acids with C₆₀⁺ primary ions as compared to Ga⁺ ions. As an example, a yield enhancement factor greater than 3000 is found for the CNO⁻ peak. A similar gain is observed for the positive secondary ions characteristic of the amino acids. Most of the atomic ions, such as Ca⁺, O⁻ and S⁻, constitute minor peaks with C₆₀⁺ ions while they often dominate the spectrum in the case of Ga⁺ ions. However, with the C₆₀⁺ source, a series of inorganic combination peaks with the elements Ca, S and O are observed in the positive spectra (i.e. HCaSO₄⁺), while they are marginal with the Ga⁺ source. For the mass range beyond 100 m/z and in both polarities, the hair fingerprints are similar with both sources. In average, for a comparable number of primary ions per spectrum, the C₆₀⁺ ion source gives intensities between two and three orders of magnitude higher than the Ga⁺ one.     

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic-inorganic hybrid multiple thin films

The effects of C₆₀ cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs⁺, 10 keV C₆₀⁺, 20 keV C₆₀²⁺ and 30 keV C₆₀³⁺ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.     

Direct ToF-SIMS analysis of organic halides and amines on TLC plates

It has been reported that: “direct analysis of thin layer chromatography (TLC) plates with secondary ion mass spectrometry (SIMS) yields no satisfactory results” (J. Chromatogr. A 1084 (2005) 113-118). While this statement appears to be true in general, we have identified two important classes of compounds, organic halides and amines, that appear to yield to such direct analyses. For example, five organic halides with diverse structures were eluted on normal phase TLC plates. In all cases the halide signals in the negative ion time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra were notably stronger than the background signals. Similarly, a series of five organic amines with diverse structures were directly analyzed by positive ion ToF-SIMS. In all but one of the spectra characteristic, and sometimes even quasi-molecular ions, were observed. Most likely, the good halide ion yields are largely a function of the electronegativity of the halogens. We also propose that direct analysis of amines on normal phase silica gel is facilitated by the acidity, i.e., proton donation, of surface silanol groups.     

Secondary ion mass spectrometer based on a high-dose ion implanter

A secondary ion mass spectrometer built around a modified high-dose ion implanter is used to study secondary ion emission in metals over a wide range of primary beam energies. The implanter generates ion beams with energies of up to 150 keV and a substrate current to 30 μA. A modified MX7304A monopole mass spectrometer is applied as an analyzer of secondary ions with mass numbers of up to 400 with a resolution of 1 M at a level of 10% of the peak height. The detection limit for iron is 6.5 ppm. The analyzer is equipped with a small-size filter separating secondary ions in energy. The relative emission intensities of the secondary monatomic and cluster ions of copper for different primary ion beam parameters are studied.