CdSe纳米晶薄膜的光敏特性研究

硒化镉(CdSe)是一种光电性能优异的II-VI族化合物半导体.采用真空热蒸发技术在Si(100)衬底上制备出高质量的CdSe纳米晶薄膜,并利用X射线衍射仪(XRD)、Raman光谱仪、膜厚测试仪、扫描电镜(SEM)和数字源表对其结晶性能、晶体结构、表面形貌及光敏特性进行了表征.结果显示,CdSe纳米晶薄膜呈六方纤锌矿结构,纯度较高,结晶性能较好,沿c轴择优生长的优势明显;同时,薄膜具有典型的光敏电阻特性,且电阻值受光照强度、退火温度影响明显.     

基于Si衬底的CdSe薄膜蒸镀工艺研究

采用真空蒸发技术在Si(100)基底上制备了CdSe纳米晶薄膜,利用X射线衍射仪(XRD)、膜厚测试仪、原子力显微镜(AFM)方法对不同蒸发电流下制备的薄膜的结晶情况、表面形貌进行分析表征.结果表明:蒸发电流对CdSe薄膜的结晶性能和表面形貌有显著影响.当蒸发电流为75 A时,CdSe薄膜沿(002)方向的衍射峰相对较强,沿c轴取向择优生长优势明显,薄膜厚度约为160 nm,晶粒尺寸约为40 nm,颗粒均匀;薄膜表面平整光滑,表面粗糙表面粗糙度(5.63 nm)相对较低,薄膜结晶质量较好.     

空心和实心SiO2胶体晶体微球的快速制备方法

胶体晶体微球因其独特的内部结构被广泛地应用到诸多领域.本文提供了一种简单、快速合成SiO2胶体晶体微球的方法,即:将单分散SiO2微球悬浮液加入到有机溶剂(正辛醇或二甲基硅油)中超声乳化,使SiO2微球在溶剂中自组装,形成SiO2胶体晶体微球,用扫描电镜(SEM)观察其形貌结构,用Nano Measurer 1.2软件统计其粒径分布.实验表明,SiO2胶体晶体微球在正辛醇中形成空心结构,在二甲基硅油中形成实心结构;悬浮液浓度,悬浮液与溶剂的质量比,单分散SiO2微球粒径不会明显影响SiO2胶体晶体微球的形貌和结构,但会对其粒径分布产生一定的影响.     

微乳液溶剂热法微/纳米Sm2O3的可控合成

采用微乳液溶剂热法,在十六烷基三甲基溴化铵(CTAB)/正辛烷/正丁醇/硝酸钐(碳酸铵)形成的反相微乳液体系中,合成了微/纳米Sm2O3的前驱体.前驱体经800℃焙烧制得了微/纳米Sm2O3.利用X-射线衍射(XRD)、扫描电子显微镜(SEM)对产物的晶形、形貌和尺寸进行了测试与分析,考察了水核比(ω)、反应温度对微/纳米Sm2O3形貌和尺寸的影响,并提出了其可能的形成机理.结果表明:随着ω的增大,微/纳米Sm2O3的形貌由椭球状变为多面体状再变为双鱼尾状;随着反应温度的升高,微/纳米Sm2O3的形貌由鱼骨状变为菱片堆叠状再变为菱片状.     

CdSe薄膜的制备及性能表征

室温下,以CdSO4H1SeO3和Na2SO4为原料,采用二电极体系,利用电化学法在ITO玻璃基底上沉积了CdSe薄膜.采用高分辨x射线衍射仪(HRXRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、紫外.可见.近红外(UV-VIS-NIR)分光光度计、荧光分光光度计(PL)对不同沉积电压下所制备的薄膜的晶体结构、形貌及光学性能进行分析表征.结果表明:所制备的薄膜为立方相CdSe,呈纳米颗粒状,部分粒子表现出不均匀团聚.紫外吸收光谱的吸收峰较体相CdSe有较大的蓝移,且导致禁带宽度发生改变,表现出量子尺寸效应.样品发射光谱表现出荧光现象,且单色性好.适当的沉积电压对CdSe薄膜的形貌和质量起关键作用,同时讨论了其反应机理.     

无约束二次物理气相法CdSe单晶体的生长研究

在物理气相法的基础上,通过无约束二次气相输运法生长出具有自然显露面的尺寸约为6mm×7mm×2mmCdSe晶体.对生长晶体的结构、成分和形貌进行表征,测试发现:XRD粉末衍射图谱强度高无杂峰,CdSe晶体的3个自然显露面分别是(100)、(002)和(110)面,回摆曲线半峰宽度较小;ICP-MS结果显示样品中杂质含量有效降低;红外透过率测试结果显示无约束二次气相法生长的CdSe晶体红外透过率高;SEM观测发现其解理面呈阶梯状且台阶方向一致.结果表明,采用无约束二次气相法生长的CdSe晶体结晶质量较好,纯度高,红外透过率高,并根据BFDH模型分析CdSe晶体自然显露面出现的原因.     

不同形貌钛酸钡纳米晶体的光催化性能研究

采用水热法,分别利用聚乙二醇200(PEG200)和乙醇的调控作用,合成了十二面体和立方块两种不同形貌的钛酸钡(BaTiO3,BTO)纳米晶体,两种晶体分别具有(110)和(100)不同的晶面.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)以及UV-Vis漫反射光谱对BTO纳米晶体进行表征分析,结果显示十二面体BTO纳米晶体具有较小的粒径,较大的表面活性;而立方块BTO纳米晶体具有较大的粒径,较小的表面活性.在相同条件下对甲基橙进行光催化降解实验,十二面体BTO纳米晶体显示出优于立方块BTO纳米晶体的催化性能.光催化动力学理论模拟结果进一步证实了上述实验结果.     

CdSe纳米晶薄膜的制备与特性研究

采用真空热蒸发技术,在光学玻璃基片上生长出排列整齐、高质量的CdSe纳米晶薄膜.通过X射线衍射(XRD)、X射线光电子能谱分析(XPS)、扫描电镜(SEM)、傅里叶红外光谱(IR)等进行表征.结果表明,薄膜结晶性能较好,纳米晶颗粒约为40 ～70 nm,呈半月状,排列整齐;化学元素配比为49.4∶50.6,稍微富Se;红外透过率高,禁带宽度为1.89 eV,高于块状的CdSe晶体(1.70 eV).     

溶剂热法制备不同形貌纳米Lu2O3粉体

本文以水、丙酮、乙醇、乙二醇为溶剂,采用溶剂热法制备了不同形貌的纳米氧化镥(Lu2O3粉)粉体前驱体,将前驱体在400～800 ℃条件下煅烧2 h制得了不同形貌的Eu3+:Lu2O3粉体.研究发现,所用溶剂的物理性质对产生特定形貌的样品具有重要的影响,以水和丙酮为溶剂,可制得具有较高长径比的Lu2O3纳米棒,而当溶剂为乙醇和乙二醇时,所得Lu2O3粉体为等轴状的纳米颗粒.     

转晶法KDP单晶生长晶面溶质浓度场模拟

针对转晶法生长KDP单晶过程,进行了流动与物质输运数值模拟,以获得生长过程中晶面溶质浓度(过饱和度)的变化规律。文中展示了晶体表面浓度分布随时间的变化过程;分析了不同转速和晶体尺寸,对晶面时均浓度场的影响。结果表明,转速越快,晶体表面过饱和度越高;晶体尺寸对其表面过饱和度的大小和分布也有较大影响。此外,由于空间上不对称,Z向和Y向晶面过饱和度分布有较大差异。在晶体处于静止或低转速,自然对流可能会对晶体表面的过饱和度分布产生影响。     

A solvothermal route to size- and shape-controlled CdSe and CdTe nanocrystals

The size- and shape-controlled CdSe and CdTe nanocrystals, which exhibit obvious quantum confinement effect, have been synthesized by a solvothermal route. It is found that initial precursor concentrations are key factors in controlling the shape of the resulting nanocrystals. Moreover, the obtained nanocrystals are all of zinc blende structure, regardless of their sizes and shapes. A possible mechanism for the formation and growth of the nanocrystals is put forward. It is inferred that the adhesion and subsequent recrystallization of nanocrystals with an assistance of remaining monomers should be a major reason for formation and growth of the elongated nanocrystals.     

Study on growth kinetics of CdSe nanocrystals in oleic acid/dodecylamine

A novel synthesis of CdSe nanocrystals is presented, which is based on the lower temperature reaction between TOPSe and cadmium acetate. An oleic acid/dodecylamine solvent was employed for studying the growth kinetics of CdSe nanoparticles at 200 °C. The concentration of growing particles remained constant following the initial nucleation step. The diameter of the CdSe nanocrystals varied from 2.0±0.1 nm up to 3.7±0.2 nm. About 90% of the available Cd was consumed during the growth. The rate constant for steady-state CdSe deposition was found to be 9.74×10⁻¹⁰ m s⁻¹ at 200 °C.     

溶剂热合成氮化硼纳米晶过程中氮源种类的影响

以NaNH2和BC l3为原料,利用溶剂热方法合成了六方氮化硼纳米微晶,并用红外吸收光谱(FTIR)、X射线粉末衍射(XRD)方法分析了微粒的结构,利用透射电子显微镜(TEM)观测了BN微粒的粒度和微观形貌。与早期用L i3N为氮源合成的氮化硼(产物中具有较多纳米棒)相比,本文中制备的氮化硼纳米晶主要呈球形,颗粒粒度明显增大,而且产率有较大幅度的提高。     

Relationship between morphology and structure of shape‐controlled CeO2 nanocrystals synthesized by microwave‐assisted hydrothermal method

The influence of synthesis conditions on morphology and structure of CeO₂ nanocrystals prepared by microwave‐assisted hydrothermal method were studied by XRD, TEM, Raman spectroscopy and photoluminescence measurements. Decisive effect of the OH^‐/Ce³⁺ molar ratio in the reaction mixture on the size and shape of CeO₂ nanocrystals was established and explained. Rise of the concentration of OH^‐ groups at the surface of growing CeO₂ nanocrystals promotes shape transformation from irregular (spheroidal) to cube and enables oriented attachment mode of particle growth. I was found that the unit cell parameter and intensity of Ce³⁺ defect related band in the luminescence and Raman spectra in ceria nanoparticles increase as follows: irregular shape nanocrystals < large cube < small primary cube shape particles. The reason is growing contribution of total subsurface volume under {100} faces, exposed by ceria nanocubes, where enhanced concentration of Ce³⁺ and oxygen vacancies occur.     

Nanocrystallization of Insoluble Copper(I) Complex and Formation Mechanism

We have successfully fabricated insoluble copper(I) complex [Cu(μ-I)dppet]₂ nanocrystals by developing the heterogeneous reaction process between rod-like nanocrystals of dppet ligand prepared in advance and added acetonitrile solution of copper(I) halide. During this reaction process, the shape of dppet ligand nanocrystals was dramatically changed from rod-like to spherical. Probably, the complexation reaction and subsequent nanocrystallization would proceed on or near swollen surface of dppet nanocrystals in acetonitrile droplet as restricted reaction field.     

Growth of a Si nanocrystal in an oxygen atmosphere. Computer simulation

Growth of a Si nanocrystal in vacuum and in atomic-oxygen atmosphere was simulated on the basis of molecular dynamics. SiO_x nanoparticles (x = 0–0.42) containing up to 302 atoms were obtained. The shape of the nanocrystals was primarily determined by the amount of oxygen contained in them. The growth of nanocrystals in an oxygen atmosphere was accompanied by the formation of oxygen clusters inside a nanoparticle, which gave rise to considerable internal stresses. In most cases, structural relaxation increases the volume of SiO_x nanocrystals and decreases internal pressure. The angular and topological statistical characteristics of Voronoi polyhedra are indicative of a structural irregularity in oxygen clusters formed inside Si nanoparticles.     

Use of cadmium selenide thin films as a carbon dioxide gas sensor

Cadmium Selenide (CdSe) thin films were prepared in different growth conditions by thermal evaporation. The films were characterised using transmission electron microscopy and X-ray diffraction. The electrical parameters such as resistivity, carrier mobility, and concentration were determined. The sensitivity of carbon dioxide (CO₂) gas on CdSe thin films were studied. A tentative mechanism was proposed, in which the role of CO₂ gas in increasing the conductivity of CdSe thin films were explained by Molecular Orbital (MO) theory. CO₂ gas sensing alarm system was fabricated.     

改进水平籽晶气相法生长CdSe单晶

采用改进的双温区水平籽晶气相升华法,生长出尺寸为?15 mm ×35 mm的完整CdSe单晶体。经X射线衍射仪、能谱分析仪和傅里叶红外光谱仪的检测,CdSe单晶粉末衍射谱与标准衍射峰吻合较好,单晶摇摆曲线半高宽0.5°;Cd、Se化学计量比等于1∶0.977,接近理想比;晶体在2.5~20.0μm红外波段范围内的透过率T >65;,吸收系数α<0.1 cm-1。这些结果表明,采用本方法生长的晶体结晶性较好、成分均匀、透过率较高,品质良好,这对生长类似高蒸气压、高熔点的III-V、II-VI族晶体,会有所帮助。     

热蒸发制备CdSe薄膜及其光电特性研究

采用真空热蒸发法技术制备CdSe薄膜,通过XRD、SEM、Hall效应和分光光度计测试了薄膜的结构、表面形貌、I-V特性和光学透过率。结果表明:CdSe薄膜(100)晶面的面间距为0.369 nm,晶粒大小约为10.2 nm,薄膜表面晶粒分布较为均匀;CdSe薄膜与锡和银的肖特基势垒高度分别为0.76 V和0.69 V;CdSe薄膜的光透过率在远红外区较高,且呈上升趋势;折射率随波长增加按指数规律减小;根据Tauc关系和Urbach规则,获得能量带隙为1.79 eV和Urbach能量为0.217 eV。