Annealing and amorphous silicon passivation of porous silicon with blue light emission

The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700-900 °C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900 °C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.     

Electronic structure and photoluminescence property of a novel white emission phosphor Na_3MgZr(PO_4)_3:Dy~(3+) for warm white light emitting diodes

To explore suitable single-phase white emission phosphors for warm white light emitting diodes, a series of novel phosphors Na_3MgZr(PO_4)_3:xDy~(3+)(0 ≤ x ≤ 0.03) is prepared, and their phase purities as well as photoluminescence properties are discussed in depth via x-ray diffraction structure refinement and photoluminescence spectrum measurement.The electronic structure properties of the Na_3MgZr(PO_4)_3host are calculated. The results reveal that Na_3MgZr(PO_4)_3 possesses a direct band gap with a band gap value of 4.917 e V. The obtained Na_3MgZr(PO_4)_3:Dy~(3+) phosphors are all well crystallized in trigonal structure with space group Rc, which has strong absorption around 365 nm and can generate warm white light emissions peaking at 487, 576, and 673 nm upon ultraviolet excitation, which are attributed to the transitions from ~4F_(9/2) to ~6H_(15/2),~6H_(13/2), and ~6H_(11/2) of Dy~(3+) ions, respectively. The optimal doping content, critical distance, decay time, and Commission International de L'Eclairage(CIE) chromaticity coordinates are investigated in Dy~(3+) ion-doped Na_3MgZr(PO_4)_3. The thermal quenching analysis shows that Na_3MgZr(PO_4)_3:Dy~(3+) has a good thermal stability, and the thermal activation energy is calculated. The performances of Na_3MgZr(PO_4)_3:Dy~(3+) make it a potential single-phase white emission phosphor for warm white light emitting diode.     

极端远紫外光刻的等离子体光源及其光学性质研究进展

现代技术的飞速发展需要集成电路不断小型化，因而开发下一代光刻光源以满足小型化的要求成为当前的一项紧迫任务。目前工业界确定的下一代光刻光源是波长为13．5nm的极端远紫外（EUV）光源，它能够把光刻技术扩展到32nm以下的特征尺寸，氙和锑材料的等离子体光源被认为是这种光源的最佳候选者。文章在介绍EUV光刻原理和EUV光源基本概念的基础上，讨论了目前研究得最多、技术最成熟的激光产生的和气体放电产生的等离子体EUV光源，对EUV光源的初步应用进行了简单介绍，并着重对氙和锑材料产生的等离子体发射性质和吸收性质的实验与理论研究进展进行了详细介绍与讨论。目前的理论研究进展表明，统计物理模型还不能很好地预测氙和锑等离子体的发射与吸收光谱，因此迫切需要发展细致能级物理模型，以得到更为精确的等离子体光学性质参数，并用于指导实验设计。提高EUV转换效率。     

极端远紫外光刻的等离子体光源及其光学性质研究进展

现代技术的飞速发展需要集成电路不断小型化,因而开发下一代光刻光源以满足小型化的要求成为当前的一项紧迫任务。目前工业界确定的下一代光刻光源是波长为13.5nm的极端远紫外（EUV）光源,它能够把光刻技术扩展到32nm以下的特征尺寸,氙和锑材料的等离子体光源被认为是这种光源的最佳候选者。文章在介绍EUV光刻原理和EUV光源基本概念的基础上,讨论了目前研究得最多、技术最成熟的激光产生的和气体放电产生的等离子体EUV光源,对EUV光源的初步应用进行了简单介绍,并着重对氙和锑材料产生的等离子体发射性质和吸收性质的实     

The effect of S-functionalized and vacancies on V2C MXenes as anode materials for Na-ion and Li-ion batteries

The electrochemical properties of V₂C and V₂CT₂ (T = O, S) MXenes with and without vacancy as anode materials for Na-ion and Li-ion batteries, have been studied using first-principles calculation. The present results indicate that the adsorption strength of Li-ion and Na-ion on V₂CS₂ are less than that of O-functionalized, together with a lower diffusion barrier. Simultaneously, V₂CS₂ monolayer exhibits lower open-circuit voltage (OCV) values of 0.72 and 0.49 V for Li- and Na-ion, respectively. Interestingly, the presence of atomic vanadium vacancy on V₂CS₂ monolayer exerts more prominent effects on enhancing adsorption strength than that of carbon vacancy for Li-ion and Na-ion, but with an exception for the diffusion of Li-ion and Na-ion on V₂CS₂ monolayer. The finding suggests that the V₂CS₂ monolayer is expected to be a potential candidate as anode material for Li-ion and Na-ion battery due to its lower open-circuit voltages and diffusion barriers.     

Ultrasound mediation for one-pot sonosynthesis and deposition of magnetite nanoparticles on cotton/polyester fabric as a novel magnetic,photocatalytic, sonocatalytic,antibacterial and antifungal textile

A magnetic cotton/polyester fabric with photocatalytic, sonocatalytic, antibacterial and antifungal activities was successfully prepared through in-situ sonosynthesis method under ultrasound irradiation. The process involved the oxidation of Fe²⁺ to Fe³⁺ via hydroxyl radicals generated through bubbles collapse in ultrasonic bath. The treated samples were analyzed by X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and vibrating sample magnetometry. Photocatalytic and sonocatalytic activities of magnetite treated fabrics were also evaluated toward Reactive Blue 2 decoloration under sunlight and ultrasound irradiation. Central composite design based on response surface methodology was applied to study the influence of iron precursor, pH and surfactant concentration to obtain appropriate amount for the best magnetism. Findings suggested the potential of one-pot sonochemical method to synthesize and fabricate Fe₃O₄ nanoparticles on cotton/polyester fabric possessing appropriate saturation magnetization, 95% antibacterial efficiency against Staphylococcus aureus and 99% antifungal effect against Candida albicans, 87% and 70% dye photocatalytic and sonocatalytic decoloration along with enhanced mechanical properties using only one iron rich precursor at low temperature.