Finite size effect on Raman frequency of phonons in nano-semiconductors

A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to be originated from the long-range Fröhlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.     

Temperature‐dependent,micro‐Raman spectroscopic study of barium titanate nanoparticles

A comparative, temperature‐dependent (80–500 K at 5 K intervals), micro‐Raman spectroscopic study of 300 and 50 nm diameter ceramic BaTiO₃ nanoparticles was carried out with the purpose of elucidating the nanoparticle size effect on the temperature dependence of the polar and non‐polar phonons. A method for calibrating Raman intensities, along with an iterative spectral fitting algorithm, is proposed for concurrent Raman band position and intensity analysis, increasing the analytical abilities of single temperature point Raman spectroscopy. The 300 nm particles exhibit all three phase transitions, whereas the 50 nm particles do not show evidence of these phase transitions in the same temperature range. The Curie temperature appears to be a phonon converging point, irrespective of the phonon symmetry. An attempt was made to qualitatively relate the temperature‐dependent Raman spectra to complimentary non‐spectroscopic methods, such as heat capacity and X‐ray diffraction studies. The study proves that the temperature‐dependent behavior of the polar phonon, 265 cm⁻¹, can be utilized as a sensitive phase transition probe. Copyright © 2014 John Wiley & Sons, Ltd.     

极性声子频率色散关系的简化形式及其应用

在 qcω条件下,得到了极性声子频率色散关系的简化形式。将此结果应用于 TGS 晶体,修正了 Tashiro 等人的计算结果,并与红外谱的实验结果比较,基本吻合。     

One phonon-assisted electron Raman scattering in a wurtzite cylindrical quantum well wire

We report the electron resonant Raman scattering (ERRS) process related to the longitudinal optical (LO), interface optical (IO) and quasi-confined (QC) phonons in a cylindrical GaN-AlN quantum well wire (QWW). We present the differential cross-section (DCS) and study the selection rules. Results reveal that the emitted photon frequency decreases with increasing the radius because of the size-selective Raman scattering effect and the built-in electric field. The contribution to the DCS mainly stems from the GaN-type LO (LO1), QC and IO phonons when the wire is thin, but the LO1 and QC phonons are dominant for the thick wire.     

压电晶体拉曼散射的统一量子论

发展了拉曼散射的一个广义量子理论，它能同时说明非极性模和极性模的作用.在场论中， 光被纵光学和横光学模的拉曼散射能在一个统一的理论框架内描述. 关键词： 拉曼散射 声子 量子场论     

Resonant Raman spectroscopy of graphene grown on copper substrates

A study of resonant Raman spectroscopy of the as-grown graphene on copper foils is presented. Different laser energies have been used to excite the sample, in order to obtain the dependence of the Raman features (intensities, frequencies and line widths) on the laser energy. We show that the normalised spectra acquired using green laser lines are more intense, with a maximum around 2.3 eV. Moreover, the results show a broader 2D (or G′) band when a UV laser is used to excite the sample, which is explained by the manifestation of the trigonal warping effect in the dispersion of electrons and phonons around the Dirac point.     

Directional dispersion of extraordinary phonons in layer compound InSe

The resonant Raman scattering of polar optical phonons has been measured in trigonal γ-InSe at the E'₁ exciton edge. The two-phonon scattering spectrum widely spreads over the frequency range of 50 cm^-1 with an extremely asymmetric lineshape. This spectrum has been interpreted in terms of the directional dispersion of extraordinary LO and TO phonons.     

Resonant Raman scattering spectra in a ZnCdSe/ZnSe structure with a quantum well and open nanowires

Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T=300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of the quantum-well and nanowire regions differ noticeably in energy. The LO phonon energies in the structures under study were calculated taking into account the compositional effect (doping of Cd into ZnSe) and biaxial strain. When excited in the exciton resonance region, RS is shown to occur via free (extended) excitonic states with the involvement of LO phonons of the ZnCdSe strained layer with final wave vectors near the Brillouin zone center. When excited below the excitonic resonance in the ZnCdSe layer, resonance scattering via localized exciton states provides a noticeable contribution to the observed RS lines. Because of the finite size of a localized state, phonons with large wave vectors are involved in these scattering processes. The RS lines produced under excitation in the excitonic region of the thick barrier layers are due to scattering from the ZnSe barrier phonons.     

Investigation of structural phase transition in polycrystalline SrTiO3 thin films by Raman spectroscopy

Polycrystalline SrTiO₃ thin films were prepared by pulsed laser deposition technique. The phonon properties and structural phase transition were studied by Raman spectroscopy. The first-order Raman scattering, which is forbidden in SrTiO₃ single crystal, has been observed in the films, due to the structural distortion caused by strain effect and oxygen vacancies. The Fano-type line shape of TO₂ phonon reveals the existence of polar microregions in the STO thin films. The evolution of TO₂ and TO₃ phonons with temperature shows the occurrence of a structural phase transition at 120 K related to the formation of polar macroregions in the films.     

Zone edge phonons in CdS1−xSex

Zone edge phonons of mixed CdS_1?xSe_x have been studied by mean of infrared absorption and Raman scattering techniques. In the A point of the Brillouin zone, it has been shown that transverse acoustical phonons have a one mode behaviour, and that optical phonons have a two modes behaviour. CdS and CdSe zone center phonons can combined and give a LO(CdS) + LO(CdSe) Raman peak in addition to the 2LO(CdS) and 2LO(CdSe) peaks; this is not the case for phonons from the edge of the Brillouin-zone where no CdS + CdSe combination can take place.     

Ce∶BaTiO_3晶体电光和二倍频系数的拉曼散射测量

从极性晶体晶格振动的理论出发 ,推导出正交系以上晶系的晶体的拉曼散射效率与晶体电光系数和二倍频系数的关系 :测量了 Ce∶ Ba TIO3 和 Ba Ti O3 晶体各纵、横模的偏振拉曼谱。在此基础上 ,计算出这两种晶体的电光系数γ3 3 、γ5 1 和二倍频系数 d3 3 、d1 5 。结果表明 :掺微量 Ce元素对 Ba Ti O3 晶体电光系数和二倍频系数影响不大     

Analysis of semiconductor surface phonons by Raman spectroscopy

Only recently Raman spectroscopy (RS) has advanced into the study of surface phonons from clean and adsorbate-covered semiconductor surfaces. RS allows the determination of eigenfrequencies as well as symmetry selection rules of surface phonons, by k-conservation limited to the Brillouin zone-center, and offers a significantly higher spectral resolution than standard surface science techniques such as high-resolution electron energy loss spectroscopy. Moreover, surface electronic states become accessible via electron–phonon coupling. In this article the fundamentals of Raman scattering from surface phonons are discussed and its potential illustrated by considering two examples, namely Sb-monolayer-terminated and clean InP(110) surfaces. Both are very well understood with respect to their atomic and electronic structure and thus may be regarded as model systems for heteroterminated and clean semiconductor surfaces. In both cases, localized surface phonons as well as surface resonances are detected by Raman spectroscopy. The experimental results are compared with surface modes predicted by theoretical calculations. On InP(110), due to the high spectral resolution of Raman spectroscopy, several surface modes predicted by theory can be experimentally verified. Surface electronic transitions are detected by changing the energy of the exciting laser light indicating resonances in the RS cross section. Received: 7 April 1999 / Accepted: 25 June 1999 / Published online: 16 September 1999     

Electric field modulated Raman scattering in CdS

We have observed electric field modulated Raman scattering by A₁ LO phonons in CdS. The field induced scattering is observed with a geometry in which Raman scattering by A₁ LO phonons is normally allowed. The interference of the field induced and allowed terms in the transition susceptibility leads to a modulated Raman scattering intensity proportional to the applied field. This is contrasted with data previously reported on field induced Raman scattering by E₁ LO phonons in a configuration in which the Raman scattering is normally forbidden and in which there is no interference between linear wavevector dependent and field induced terms in the transition susceptibility. Electric field effects on Raman scattering by TO phonons and by 2 LO phonons is also discussed.     

ZnSe-ZnS应变超晶格的Raman散射

本文报导了Znse—ZnS应变超晶格的Raman光学声子谱.我们观测到,随着应变大小的改变,ZnSe和ZnS的纵向光学声子发生频移.ZnSe层中纵向光学声子可发生较大的蓝移,也可发生较小的红移;ZnS层中的纵向光学声子发生较大的红移.这些现象为“应变场下的光学模理论”所解释.文中还报导了在波数为110cm-1处观测到一很强的散射峰,并把它归结为超晶格表面层单斜Se所引起的散射;在其它地方还观测到非晶态Se、三角Se引起的散射峰.     

Raman spectra of ZnSe nanoparticles synthesized by thermal evaporation method

ZnSe nanoparticles were synthesized by using a thermal evaporation method for a vapour phase reaction of zinc and selenium sources. The sample was characterized by XRD, TEM, HRTEM and Raman spectroscopy. Raman spectra of longitudinal-optical (LO) like mode was analysed by a macroscopic continuum dielectric model. Large broadening of LO-mode is homogeneous and comes from the relaxation of the phonons at the interface and contribution of defects. Surface modes give the main contribution to the asymmetry of the lineshape.     

Crystal structure and phonon modes of ilmenite‐type NaBiO3 investigated by Raman and infrared spectroscopies

NaBiO₃ is an ilmenite‐type compound presenting a trigonal structure. In this work, we have performed optical spectroscopic investigations using Raman scattering and infrared reflectivity for this material. By using group‐theory calculations, it was possible to determine the number of optically active modes. Fitting procedures besides Kramers–Kronig (KK) procedures lead to a consistent collection of phonon modes. The Raman spectrum showed nine active first‐order modes, while the infrared one revealed eight polar phonons, in good agreement with the theoretical predictions. The results allowed us to confirm the R3 (#148) space group for this compound, and to establish a set of active phonons not yet reported in the literature. Copyright © 2009 John Wiley & Sons, Ltd.     

Direct measurement of the lifetime of optical phonons in single-walled carbon nanotubes

Time-resolved anti-Stokes Raman spectroscopy has been applied to probe the dynamics of optical phonons created in single-walled carbon nanotubes by femtosecond laser excitation. From measurement of the decay of the anti-Stokes Raman signal in semiconducting nanotubes of (6,5) chiral index, a room-temperature lifetime for G-mode phonons of 1.1+/-0.2 ps has been determined. This lifetime, which reflects the anharmonic coupling of the G-mode phonons to lower-frequency phonons, is important in assessing the role of nonequilibrium phonon populations in high-field transport phenomena.     

Influence of Nonequilibrium LO Phonons on High-frequency Performance of One-dimensional Hot Electrons in Quantum Wires of Polar Semiconductors

Small-signal ac transport of degenerate one-dimensional hot electrons in quantum wires of GaAs and In_0.53Ga_0.47As is studied for lattice temperatures of 77 K and 300 K. The carrier energy loss via polar optic phonons and momentum losses via polar optic phonons, acoustic phonons and ionized impurities are included in the calculations. Alloy disorder scattering in momentum loss is additionally incorporated for (In,Ga)As. The consideration of nonequilibrium optical phonons or hot phonons is found to enhance the 3dB cut-off frequency (f_3dB) considerably, where the ac mobility falls to 0.707 of its low frequency value. f_3dB is generally higher for (In,Ga)As quantum wire than for GaAs.     

Resonant multiphonon Raman scattering in AgBr

Resonant Raman scattering in AgBr single crystals is studied at low temperatures. Excitation in resonance with the indirectΓ — L exciton as intermediate state gives rise to selectively enhanced narrow two-phonon Raman scattering. The phonons involved are pairs ofLA andTO phonons of opposite wavevectors near theL-point. A simple model involving one discrete exciton level is developed to explain the resonance behaviour. The temperature dependence of the scattered intensity, that is studied for 1.8 K <T < 35 K, can consistently be interpreted within this model as being due to the lifetime of the intermediate state. Assuming that the excitons predominantly decay by one-phonon scattering with long wavelength acoustical phonons the predicted temperature dependence of the intensity is found in good agreement with the experimental result. Additional scattering peaks are believed to be due to third-order processes involving an acousticalX-phonon in addition to theL-phonons of the second-order scattering. Using an oriented sample the resonant Raman peaks are found to be polarized.     

Optical phonons in Ge quantum dots obtained on Si(111)

The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is observed. It is shown that phonon frequencies are adequately described in terms of the elastic properties and the dispersion of the optical phonons of bulk Ge. The strain experienced by the Ge quantum dots is estimated.