Degradation of the transconductance of gate-modulated generation current in nMOSFET

The degradation of transconductance (G) of gate-modulated generation current I_GD in LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (Q_L) makes the effective drain voltage minish. Accordingly, the G peak in depletion (G_MD) and that in weak inversion (G_MW) decrease. It is found that Δ G_MD and Δ G_MW each have a linear relationship with the n-th power of stress time (tⁿ) in dual-log coordinate: Δ G_MD ∝ tⁿ, Δ G_MD ∝ tⁿ (n=0.25). During the alternate stress, the injected holes neutralize Q_L induced by the previous EIS. This neutralization makes the effective V_D restore to the initial value and then the I_GD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Q_C). As a result, G_MW only recovers to the circa 50% of the initial value after the hole-injection-stress (HIS). Instead, G_MD is almost recovered. The relevant mechanisms are given in detail.     

Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

遗传密码的进化稳定性

本评述了遗传密码的进化有关的物理问题。主要讨论了：1）从进化稳定性的观点研究遗传密码的简并规则,证明了现有密码表中多重态的简并规则是突变危险性极小的;2）从进化稳定性的观点研究了遗传密码表中氨基酸和终止密码子的排布,导出了总体突变危险性极小的表,并证明了标准密码表是在某些约束（这些约束反映了密码形成时期的初始条件）下总体突变危险性极小的表;3）密码表中20种氨基酸和终止密码简并度的分布,以及改变简并度条件下密码反常的出现。     

遗传密码的进化稳定性

本文评述了遗传密码的进化有关的物理问题。主要讨论了 :1 )从进化稳定性的观点研究遗传密码的简并规则 ,证明了现有密码表中多重态的简并规则是突变危险性极小的 ;2 )从进化稳定性的观点研究了遗传密码表中氨基酸和终止密码子的排布 ,导出了总体突变危险性极小的表 ,并证明了标准密码表是在某些约束 (这些约束反映了密码形成时期的初始条件 )下总体突变危险性极小的表 ;3)密码表中 2 0种氨基酸和终止密码简并度的分布 ,以及改变简并度条件下密码反常的出现     

超薄栅下LDD nMOSFET器件GIDL应力下退化特性

对1.4nm超薄栅LDD nMOSFET器件栅致漏极泄漏GIDL(gate-induced drain leakage)应力下的阈值电压退化进行了研究.GIDL应力中热空穴注进LDD区界面处并产生界面态，这导致器件的阈值电压变大.相同栅漏电压V_DG下的不同GIDL应力后阈值电压退化量的对数与应力V_D/V_DG的比值成正比.漏偏压V_D不变的不同GIDL应力后阈值电压退化随着应力中栅电压的增大而增大，相同栅偏压V_G下的不同GIDL应力后阈值电压退化也随着应力中漏电压的增大而增大，这两种应力情形下退化量在半对数坐标下与应力中变化的电压的倒数成线性关系，它们退化斜率的绝对值分别为0.76和13.5.实验发现器件退化随着应力过程中的漏电压变化远大于随着应力过程中栅电压的变化. 关键词： 栅致漏极泄漏 CMOS 阈值电压 栅漏电压     

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

We present an AlGaN/GaN high-electron mobility transistor(HEMT) device with both field plate(FP) and lowdensity drain(LDD). The LDD is realized by the injection of negatively charged fluorine(F-) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.     

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max） stress. It is found that the degradation of device parameters exhibits saturating time dependence under the two stresses. We concentrate on the effect of these two stresses on gate-induced-drain leakage （GIDL） current and stress induced leakage current （SILC）. The characteristics of the GIDL current are used to analyse the damage generated in the gate-to-LDD region during the two stresses. However, the damage generated during the LGVS shows different characteristics from that during Isub stress. SILC is also investigated under the two stresses. It is found experimentally that there is a linear correlation between the degradation of SILC and that of threshold voltage during the two stresses. It is concluded that the mechanism of SILC is due to the combined effect of oxide charge trapping and interface traps for the ultra-short gate length and ultra-thin gate oxide LDD NMOSFETs under the two stresses.     

A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

We investigate the influence of voltage drop across the lightly doped drain(LDD) region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson’s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.     

Investigation of the characteristics of GIDL current in 90nm CMOS technology

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.     

Mechanism of NBTI Recovery under Negative Voltage Stress

Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study the degradation and recovery of negative bias temperature instability (NBTI) with a real-time method. By this method, different recovery phenomena among different size devices are observed. Under negative recovery stress, the drain current gradually recovers for the large size devices and gets into recovery saturation when long recovery time is involved. For small-size devices, a step-like recovery of drain current is observed. The recovery of the drain current is mainly caused by the holes detrapping and tunnelling back to the channel surface which are trapped in oxide. The model of hole detrapping explains the recovery under negative voltage stress reasonably.     

Role of the volume and surface breakdown in a formation of microdischarges in a steady-state DBD

The results of an experimental study on a spatial-time behavior of microdischarges (MDs) in steady-state dielectric barrier discharge (DBD) are presented. MDs of DBD have a spatial “memory”, i.e. every subsequent MD appears exactly at the same place that was occupied by the preceding MD. In most cases each MD appears at its fixed place only once by every half-period (HP). Spatial “memory” is derived from slow recombination of plasma in the MDs channels for a period between two neighbor HPs. In steady-state DBD each plasma column was formed only one-time due to local avalanche-streamer breakdown in the very first (initial) gas gap breakdown under inception voltage U^*U^*. After that DBD is sustained under voltage lower than U^*U^*. For the plane-to-plane DBD having the restricted electrode area there is a critical voltage U ₁: DBD is in a steady-state if U > U ₁ but the DBD decays slowly at voltages below U ₁. The decay takes many HPs and occurs due to decreasing the number of MDs inside the gap because of their Brownian motion from central region to the outside of the discharge area. In steady-state DBD there is no correlation between an appearance of alone MD and phase of the applied voltage – each MD has a great scatter in its appearance at the HP. This scatter is attributed to the dispersion in a threshold voltage for local surface breakdowns around the MD base. So, in steady-state DBD the MD volume plasma is responsible for an existence of spatial “memory” (i.e. where the MD appears) but the surface charge distribution around MD is responsible for MD time dispersion (i.e. when the MD appears).     

NiTi合金中应力诱导的I/C相变及其界面动力学的研究

在改装了的拉力试验机上,以不同的拉伸速率ε(0.79—18×10^-5s^-1)进行加、卸载试验,并用中间扭摆和四端电位法同时测量了Ni-49at％Ti合金丝在应力诱导I/C相变过程的内耗Q^-1、模量M/M₀、电阻率ρ/ρ₀和应力-应变曲线。研究了应力循环和应变速率的影响。在Q^-1-ε曲线上出现Q^-1峰,而在f²-ε曲线上出现与之相对应的模量极小。内耗峰的高度Q_p^-1和模量亏损值均随ε增大而增大。根据界面动力学模型和内耗的实验数据,计算得应力诱导I/C相变过程界面的动力学关系为V=V^*(△G—△G_R)^m,V^*和m为动力学参数,△G_R为相变过程中运动相界面所受的阻力,计算得△G_R≈1cal/mol。讨论了内耗和模量亏损、软模效应之间的关系。 关键词：     

无扩散相变中界面动力学的唯象理论及其应用

固态相变中相界面或畴界面的平均运动速度V与有效相变驱动力△G＇(相变驱动力△G与相界面运动阻力△G_R之差)之间的关系可表示为V=φ(△G—△G_R)。当有单向变化的外场(场强为ξ,变化速率为ξ)作用于相变系统并能诱导相界面运动时,就会产生母相/新相间的转变。在相变过程中同时叠加一个交变应力时,则可计算得界面动力学关系V=φ(△G—△G_R)与相变过程内耗Q^-1、相关的模量亏损(△M/M)、相变速率dF/dξ、相变应变ε₀间的关系为 [d lnφ(△G-△G_R)/d(△G-△G_R)]= Q^-1ω/n²M(dF/dξ)ξ = (△M/M)ω/nMε₀(dF/dξ)ξ, 以及 (△M/M)/Q^-1=ε₀/n。此处ω为交变应力的圆频率,M为与振动模式有关的弹性模量,n为应力与界面运动的耦合因子。因此,界面动力学关系式的通解为 V = ∑(±n)/(α≠-1) A_α exp{[(△G-△G_R)/△G_α^*]^{α+ 1}/(α+ 1)} +∑(m)/(β₀) A_β[(△G-△G_R)/△G_β^*]^β 此处n,m为正整数。上式中的各项参数可由实验数据确定。此外,(△M/M)/Q^-1的等式还可用于判别相变过程的模量亏损中有无声子模软化的贡献。 关键词：     

电化学析氢反应中单层MoSe2氢吸附机理第一性原理研究

基于密度泛函理论的第一性原理方法,本文计算了单层2H相MoSe₂纳米材料表面及两种边缘（Mo原子边缘、Se原子边缘）不同活性位点、不同氢原子吸附率下的氢吸附吉布斯自由能（Gibbs free energy,用△G_H⁰表示）,并且将对应的微观结构进行了系统分析比较,得出△G_H⁰最接近于0 eV的吸附位点及相应的吸附率.同时,结合差分电荷密度和电负性理论,分析了单层MoSe₂两种边缘氢吸附的电荷转移及成键特性,进一步解释了不同吸附位点呈现的结构与能量趋势.最后,通过基于密度泛函理论的第一性原理分子动力学模拟,研究了高温热运动对两种边缘氢吸附的影响,获得了氢原子发生脱附的临界温度及对应的微观动态过程.该理论研究从原子尺度揭示了单层2H相MoSe₂纳米材料边缘不同位点在不同温度下对氢原子吸附和脱附的微观机理,证实了Mo原子边缘的畸变和重构行为,加深了对实验中单层2H相MoSe₂边缘在不同温度下氢吸附机理的理解,为实验中通过控制MoSe₂边缘设计廉价高效的析氢催化剂提供理论参考.     

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection (LGVHHI), gate-induced drain leakage induced hot-hole injection (GIDLIHHI) and substrate hot-hole injection (SHHI), have different influences on the devices damaged already by the previous hot electron injection (HEI) because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device's performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.     

Torque scaling in turbulent Taylor-Couette flow with co- and counterrotating cylinders

We analyze the global transport properties of turbulent Taylor-Couette flow in the strongly turbulent regime for independently rotating outer and inner cylinders, reaching Reynolds numbers of the inner and outer cylinders of Re(i) = 2×10(6) and Re(o) = ±1.4×10(6), respectively. For all Re(i), Re(o), the dimensionless torque G scales as a function of the Taylor number Ta (which is proportional to the square of the difference between the angular velocities of the inner and outer cylinders) with a universal effective scaling law G ∝ Ta(0.88), corresponding to Nu(ω) ∝ Ta(0.38) for the Nusselt number characterizing the angular velocity transport between the inner and outer cylinders. The exponent 0.38 corresponds to the ultimate regime scaling for the analogous Rayleigh-Bénard system. The transport is most efficient for the counterrotating case along the diagonal in phase space with ω(o) ≈ -0.4ω(i).     

直流法测试薄膜热导的数值模拟研究

薄膜的热导率是薄膜热学性能的最重要参数之一, 相对于多数文献的二维或三维测试结构, 本文采用一维双端支撑悬臂梁结构研究了薄膜热导率的测试方法. 悬臂梁包含上层的兼做加热电阻及测温电阻的金属条和下层的待测试薄膜. 利用一维热传导方程推导并获得了在直流电流加热条件下, 悬臂梁的温升分布(Δ T)及加热电阻两端电压增量(Δ U) 表达式与薄膜热导率之间的关系. 采用ANSYS有限元软件仿真了不同仿真参数时的Δ T及Δ U, 仿真结果与温升表达式计算结果符合得很好. 与常用的3倍频率法(3ω) 薄膜热学性能测试方法相比, 一维悬臂梁直流法测试结构及手段较为简单且可以获得更为精确的结果.     

Thermoluminescence in systems not subject to the usual approximations for first and second order kinetics

The properties of thermoluminescence (TL) glow curves have been studied in systems, containing one or more glow peaks, not restricted to the assumptions used to derive the usual first and second order glow peak kinetic expressions. If retrapping is negligible first order glow peaks are obtained whose peak temperature and shape are independent of other factors such as initial trapped charge concentrations. If retrapping occurs, glow peaks are obtained that are, in most cases, only approximated by first or second order kinetics. Also, in these cases the peak temperature, shape, relative intensity and other glow curve characteristics depend strongly on initial trapped charge concentrations, recombination and retrapping cross sections and other factors.     

Measurement of the interaction energy near a Feshbach resonance in a 6Li Fermi gas

We investigate the strongly interacting regime in an optically trapped 6Li Fermi mixture near a Feshbach resonance. The resonance is found at 800(40) G in good agreement with theory. Anisotropic expansion of the gas is interpreted by collisional hydrodynamics. We observe an unexpected and large shift (80 G) between the resonance peak and both the maximum of atom loss and the change of sign of the interaction energy.     

煎炸食用油质量变化的同步荧光光谱研究

利用同步扫描荧光光谱法,并结合红外吸收光谱法对经过高温煎炸的几种食用油进行了分析和研究.实验发现,与新油相比煎炸后的食用油在370~380 nm附近的荧光峰消失,表明一些营养物质（如维生素E）的挥发或分解;而461 nm和479 nm附近出现的新荧光峰,和红外光谱区1745 cm附近的红外吸收增加表明油样中含有羰基C＝O基团的物质的增加.从而表明荧光光谱方法可以用来对煎炸食用油进行检测.