Sm3（F3,Co,Mn）29 compounds：promising materials for permanent magnets

The outstanding hard-magnetic properties are reported of Sm_3Fe_{28.1-x}Co_xMo_{0.9} compounds with x=12, 14, 16. In this alloy system, only a small amount of Mo is needed to stabilize the 3:29 structure so that the magnetic properties are not seriously affected by the presence of this nonmagnetic element. Substitution of Co for Fe leads to a significant increase of the magnetic anisotropy, and for x≥14 the easy magnetization direction changes from easy plane to the easy axis. In this alloy system, the compound Sm_3Fe_{12.1}Co_{16}Mo_{0.9} is a very promising candidate for permanent magnet applications. Its room temperature saturation magnetization (μ_0M_s=1.5 T) and anisotropy field (B_{an}=6.5 T) are comparable to the values for Nd_2Fe_{14}B (μ_0M_s=1.6 T and B_{an}=7 T). However, the Curie temperature of Sm_3Fe_{12.1}Co_{16}Mo_{0.9} is 1020 K, which is appreciably higher than that for Nd_2Fe_{14}B (T_C=588 K).     

界面对Fe65Co35薄膜微结构和软磁性的影响

用不同的材料（Co₉₃Fe₇和Fe）作衬底层,利用磁控溅射法成功制备了Fe₆₅Co₃₅（主层）/衬底层结构的双层薄膜．通过X射线衍射和磁性测量发现,在不同的衬底上沉积的Fe₆₅Co₃₅薄膜的织构不同,并且（200）取向的Fe₆₅Co₃₅薄膜的面内各向异性和软磁性优于（110）取向的Fe₆₅Co_{35关键词： 65}Co₃₅薄膜')" href="#">Fe₆₅Co₃₅薄膜 衬底层 界面各向异性 软磁性     

利用电泳法在金属基底上制备MgB2超导厚膜

利用电泳技术在高熔点金属基底Ta，Mo和W上制备MgB₂超导厚膜.厚膜中的MgB2晶粒结合紧密，粒度小于1μm，呈随机取向生长.电阻测量表明沉积在Ta，Mo，W上的MgB₂厚膜的超导起始转变温度分别为36.5K，34.8K，33.4K，对应的转变宽度为0.3K，1.5K和2.0K.三种基底上制备的MgB₂厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同，MgB₂/Mo厚膜的临界电流密 关键词： 2超导厚膜')" href="#">MgB₂超导厚膜 电泳 金属基底     

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si(100) substrates,and subsequently annealed in vacuum at different temperatures for different time.It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films.Interestingly,the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film.The high coercivity of 24.1 kOe(1 Oe = 79.5775 A/m) and remanence ratio(remanent magnetization/saturation magnetization)of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K.In addition,the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well.The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at1023 K.     

Nd-Ce-Fe-B纳米复合薄膜的磁性及交换耦合作用

采用磁控溅射技术制备了具有永磁特征的Nd-Ce-Fe-B多层纳米复合薄膜,并对其进行了退火处理.通过改变退火温度,研究其对薄膜磁性能和晶体结构的影响.结果表明,随着退火温度的提高薄膜磁性能逐渐增大,但当温度达到695℃以上时,薄膜的磁性能急剧下降.当退火温度为675℃时,薄膜的矫顽力Hci=10.1 kOe(1Oe=79.5775 A/m),垂直于薄膜表面方向的剩余磁化强度4πM_(r⊥)=5.91 kG(1 G=10~3/(4π)A/m).薄膜的X射线衍射结果表明,磁性薄膜具有较好的c轴取向.通过对薄膜磁化反转过程的研究,发现随着外加磁场的增大,M_(rev)的极小值向M_(irr)减小的方向移动,这与畴壁弯曲模型类似,表明在薄膜中存在较强烈的局部钉扎作用,而剩余磁化强度曲线表明这种钉扎作用在薄膜矫顽力机制中并不占支配作用.此外,薄膜的Henkel曲线结果表明在薄膜中存在较强的交换耦合作用,在经过685℃退火的薄膜中磁相互作用更加显著.     

Crystallographic and magnetic structures ofPr6Fe13Ge studied by powder neutron diffraction

Crystallographic and magnetic structures of Pr_6Fe_{13}Ge have been investigated by high-resolution powder neutron diffraction in the temperature range of 10－300 K. The magnetic structure consists of ferromagnetic Pr_6Fe_{13} slabs that alternate antiferromagnetically, along c, with the next Pr_6Fe_{13} slab separated by a non-magnetic Ge layer. The magnetic moments lie within the ab-planes. The propagation vector of this structure is k=(001) with respect to the conventional reciprocal lattice of the I-centred structure. However, the temperature-dependence of neutron-scattering intensity of the (110) Bragg peak, very similar to the temperature-dependent magnetization measured by SQUID magnetometer, indicates that a small c-axis ferromagnetic component should be added to the above antiferromagnetic model.     

Control of crystallographic orientation in L10 FePt films by using Cr and CrW underlayers

The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr₈₅W₁₅ underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr₈₅W₁₅ because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

室温生长MgO底层诱导(001)取向FePt薄膜的有序化过程对FePt成分的依赖

室温下通过磁控溅射在表面热氧化的Si基片上生长了MgO/Fe_xPt_100-x双层膜和Fe_xPt_100-x单层膜系列样品，Fe_xPt_100-x的原子成分x=48—68.研究了热处理前后不同成分FePt薄膜的晶体结构和磁性的变化，尤其是MgO底层的引入对FePt的晶体结构和磁性的影响 关键词： FePt(001)薄膜 0相')" href="#">L1₀相     

Improvement of magnetic properties and read/write characteristics in SmCo5 perpendicular thin films

An SmCo₅ alloy is a promising candidate for ultra-high density magnetic recording media because of its strong uniaxial magnetocrystalline anisotropy, whose constant, K_u, is more than 1.1×10⁸ erg/cm³. Recently, we successfully obtained high perpendicular magnetic anisotropy for a sputter-deposited SmCo₅ thin film by introducing a Cu/Ti dual underlayer. However, it is necessary to improve magnetic properties and read/write (R/W) characteristics for applying SmCo₅ thin films to perpendicular magnetic recording media. In this study, we focused on reduction of magnetic domain size and change of a magnetization reversal process of SmCo₅ perpendicular magnetic thin films by introducing carbon (C) atoms into the constituent Cu underlayer. The magnetic domain size became small and the ratio of coercivity (H_c) against magnetic anisotropy (H_k) which is an index of the magnetization reversal process was increased by adding C atoms. We also evaluated the R/W characteristics of SmCo₅ double-layered media including C atoms. The medium noise was decreased and signal-to-noise ratio increased by introducing the C. The addition of C into the Cu underlayer is effective for changing the magnetization reversal process, reducing medium noise and increasing SNR.     

Domain structures of Nd13Fe80B7 magnets during HDDR process

The domain structures of Nd13Fe80B7 alloy at different stages of the HDDR process have been revealed using a magnetic force microscope. In the as-cast samples, the columnar crystals with easy axis perpendicular to one another are clearly characterized by their different domain structures. For the insufficient and sufficient HD treatment, an obvious change of domain structure occurs, which is related to the variation of composition and crystalline microstructure during the HD process. And for the samples after sufficient DR processing, it is confirmed that the configuration of the columnar crystals is retained by the detected domain structures.     

Magnetic properties and magnetocaloric effects in Tb6Co1.67Si3 compound

Magnetic properties and magnetocaloric effects of Tb₆Co_1.67Si₃ have been investigated by magnetization measurement. This compound is of a hexagonal Ce$_{6}$Ni$_{2}$Si$_{3}$-type structure with a saturation magnetization of 187\,emu/g at 5\,K and a reversible second-order magnetic transition at Curie temperature $T_{\rm C} = 186$\,K. A magnetic entropy change $\Delta S = 7$\,J\,$\cdot$\,kg$^{-1}$\,$\cdot$\,K$^{-1}$ is observed for a magnetic field change from 0 to 5\,T. A large value of refrigerant capacity (RC) is found to be 330\,J/kg for fields ranging from 0 to 5\,T. The large RC, the reversible magnetization around $T_{\rm C}$ and the easy fabrication make the Tb₆Co_1.67Si₃ compound a suitable candidate for magnetic refrigerants in a corresponding temperature range.     

The anisotropy of Gd－Fe exchange interaction for Gd2Fe17 and Gd2Fe17H3

The magnetization curves along the crystal axes for Gd_2Fe_{17} and Gd_2Fe_{17}H_3 were analysed based on the single-ion model. If the Gd－Fe exchange interaction has been taken as isotropic as usual, the fitted values of magneto-crystalline anisotropy of the Fe sublattices in Gd_2Fe_{17} and Gd_2Fe_{17}H_3 would become unreasonably different from those of the corresponding Y or Lu compounds. It was shown that the large difference is caused by the neglect of the anisotropy of the Gd－Fe exchange interaction.     

Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers

Ba_0.5Sr_0.5TiO₃ (BST) thin films were deposited on copper foils via sol-gel method with La₂O₃ as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La₂O₃ buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La₂O₃ buffer layer on the crystallizability and microstructure of BST thin films were also investigated.     

Growth and magnetic properties of ultra-thin Co(0001) films on patterned {\rm Mo(110)/Al_2O_3(11\overline{2}0)} substrates

Single crystalline patterned Mo(110) films have been prepared on ${\rm Al_2O_3(11\overline{2}0)}$ using standard lithographical techniques, that can be used as a substrate for 3d magnetic metals epitaxy. The preparation procedure, and the structural and morphological characteristics are presented. We show that the patterned Mo(110) films may be used in a similar way than single crystal Mo(110) substrates. The structural and magnetic properties of a 3 nm-thick cobalt film deposited on the patterned Mo(110) film have been studied. The epitaxial Co layer reveals a uniaxial in-plane magnetic anisotropy as measured by Kerr magnetometry.     

衬底对Cu(In,Ga)Se2薄膜织构的影响

分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上，采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se₂薄膜，用X射线衍射仪测量薄膜的织构，研究衬底对Cu(In,Ga)Se₂薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se₂薄膜的(112)衍射峰强度依次逐渐减弱，(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se_{2关键词： 择优取向 Cu(In 2}薄膜')" href="#">Ga)Se₂薄膜 太阳电池     

Studies on high-moment soft magnetic FeCo/Co thin films

The dependences of soft magnetic properties and microstructures of the sputtered FeCo (=FeFeCo薄膜 溅射条件 软磁性 高饱和磁化强度FeCo film, sputtering conditions, high saturation magnetization, soft magnetic properties2005-10-263/7/2006 12:00:00 AMThe dependences of soft magnetic properties and microstructures of the sputtered FeCo （=Fe65Co35） films on Co underlayer thickness tCo, FeCo thickness tFeCo, substrate temperature Ts and taxget-substrate spacing dT-s are studied. FeCo single layer generally shows a high coercivity with no obvious magnetic anisotropy. Excellent soft magnetic properties with saturation magnetization μ0Ms of 2.35 T and hard axis coercivity Hch of 0.25 kA/m in FeCo films can be achieved by introducing a Co underlayer. It is shown that sandwiching a Co underlayer causes a change in orientation and reduction in grain size from 70 nm to about 10 nm in the FeCo layer. The magnetic softness can be explained by the Hoffmann＇s ripple theory due to the effect of grain size. The magnetic anisotropy can be controlled by changing dT-S, and a maximum of 14.3 kA/m for anisotropic field Hk is obtained with dT-S=18.0 cm.     

Thermal stability of Mg2Si epitaxial film formed on Si（111） substrate by solid phase reaction

A single crystalline Mg2 Si film was formed by solid phase reaction(SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s),which was enhanced by post annealing from room temperature to 100 ℃in a molecular beam epitaxy(MBE) system.The thermal stability of the Mg2 Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650 ℃,respectively.The Mg2 Si film stayed stable until the annealing temperature reached 450 ℃ then it transformed into amorphous MgO x attributed to the decomposition of Mg2 Si and the oxidization of dissociated Mg.     

择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究

分别采用sol-gel法和磁控溅射法在Si（001）单晶衬底上制备出（111）和（001）取向的MgO缓冲层薄膜,随后在其上生长Ba_0.7Sr_0.3TiO₃（BST30）铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO（001）缓冲层上可长出（101）取向的BST30薄膜,而在较薄的MgO（111） 缓冲层上则表现出（101）和（111）取向相互竞争的现象,随着MgO（111）缓冲 关键词： 0.7Sr_0.3TiO₃')" href="#">Ba_0.7Sr_0.3TiO₃ 铁电薄膜 择优取向 sol-gel     

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO₂:F薄膜衬底上制备未掺杂的SnO₂薄膜形成过渡层,并将其在N₂/O₂=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复