Phase transitions in La1−x CaxMnO3−x/2 manganites

The crystal structure parameters and magnetic and electrical properties of La_1?x Ca_xMnO_3?x/2 reduced manganites with 0≤x≤0.5 are established. These investigations contribute to the understanding of magnetic interactions in manganites without Mn⁴⁺ ions. It is found that these manganites show a long-range antiferromagnetic order up to x=0.09 and transform into spin glasses at 0.09<x≤0.35. The compositions in the range 0.35<x≤0.5 show a strong increase in the spontaneous magnetization and critical point associated with the appearance of spontaneous magnetization and can therefore be viewed as inhomogenious ferromagnets. The magnetic and crystal structure peculiarities of La_0.5Ca_0.5MnO_2.75 are established by the neutron diffraction method. The strongly reduced samples show a large magnetoresistance below the point where the spontaneous magnetization develops. The magnetic phase diagram of La_1?x Ca_xMnO_3?x/2 is established by magnetization measurements. The magnetic behavior is interpreted assuming that the Mn³⁺-O-Mn³⁺ magnetic interaction is anisotropic (positive-negative) in the orbitally ordered phase and isotropic (positive) in the orbitally disordered phase. Introduction of the oxygen vacancies changes the magnetic interaction sign from positive to negative, thereby leading to a spin glass state in strongly reduced compounds. The results obtained reveal unusual features of strongly reduced manganites such as a large ferromagnetic component, a high magnetic ordering temperature, and a large magnetoresistance despite the absence of Mn³⁺-Mn⁴⁺ pairs. In order to explain these results, the oxygen vacancies are supposed to be ordered.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Martensitic transformation in La1−x Yb x Ag1−y In y

The structural phase transformation of La_1–x Yb _x Ag_1–y In _y has been studied on single crystals by low temperature Laue-technique. The martensitic transformation in this pseudobinary intermetallic alloy has to be characterized as a weak orthorhtombic distortion of a single I centered unit cell (c/a1.04;a/b1.006) and a collective slipping or twinning of these cells that gives a fixed orientation between the remaining cubic room temperature structure and the martensitic phase. Above room temperature exists an order-disorder transformation from the CsCl-B2 structure to an at room temperature metastable W-A2 structure. There is no dramatic change in the physical properties of this alloy by substituting La by Yb, so we may approximate our results to LaAg_1–y In _y .This paper is dedicated to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

Surface segregation in CuxNi1−x alloy

The tight-bonding Hartree Hamiltonian and a mixed Bethe-lattice approximation is used to study the surface segregation phenomenon of Cu_xNi_1−x alloy. It is found that Ni atoms do segregate to the surface layer in the Cu-rich range (0.75 < x < 1). This is in contrast with previous theories which predict the enrichment of Cu atoms at the surface for all bulk Cu concentrations. However, the present theory agrees reasonably well with the recent experimental observation of a crossover at x = 0.84 by Hashizume et al. [1].     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

Subsurface localization of charge carriers in Si/SiO2/Si x Ge1 − x nanostructures

Analysis of the capacitance-voltage (C-V) characteristics reveals an elevated concentration of charge carriers under the surface of a silicon substrate due to the formation of elastically stressed regions induced in the substrate by Si _x Ge_{1 ? x} nanoislands grown on the preliminarily oxidized Si surface. The C-V characteristics exhibit charge density peaks at a depth from 700 to 1000 nm for Si/SiO₂/Si _x Ge_{1 ? x} structures with various thicknesses of the SiO₂ layer. The results of theoretical calculations of the electron density distribution in the bulk of the silicon substrate correspond on the whole to the C-V characteristics. The state of the interfaces in the structures with different thicknesses of the oxide layer, which determines the effects of surface and interfacial recombination as well as charge carrier scattering, is studied by analyzing the kinetics of decay of a photo-emf signal and the photo-emf distribution over the surface of the structure. The results can be used in the development of various devices based on SiGe with inclusions of oxide layers.     

Dielectric relaxation in LaSrCo1−x Al x O4 ceramics

Dielectric properties of LaSrCo_1−x Al _x O₄ (x=0, 0.1, 0.3, and 0.5) ceramics were investigated in a broad frequency and temperature range. The AC conductivity decreased with the increasing Al concentration. Dielectric constant increased at lower frequency and decreased at higher frequency when the Al concentration increased from 0.1 to 0.3, then it decreased at all frequencies as the x value was 0.5. While the dielectric loss decreased first and then increased with the increasing Al concentration. There was one dielectric relaxation in the curve of temperature dependence of dielectric properties of LaSrCo_0.7Al_0.3O₄ ceramics. The nonadiabatic small polaronic hopping process should contribute to the dielectric relaxation in the present ceramics. The AC conductivity increased in about one order of magnitude after annealing the sample in the oxygen atmosphere, and this should be attributed to the appearance of interstitial oxygen in the annealed sample.     

Spin-wave resonance in [Co x Ni1 − x ]N and [Co x P1 − x ]N gradient films

Gradient films of ferromagnetic 3d metals with prescribed magnetic potential profile along the film thickness are obtained. It is found that the spin-wave resonance spectrum in these films is characterized by anomalous dependences of resonance fields of spin-wave modes H _r on the mode number: H _r(n) ～ n, H _r(n) ～ n ^2/3.     

Electron–hole superlattices in GaAs/Al x Ga1− x As multiple quantum wells

A GaAs/Al _x Ga_{1? x} As semiconductor structure is proposed, which is predicted to superconduct at T _c?≈?2?K. Formation of an alternating sequence of electron- and hole-populated quantum wells (an electron–hole superlattice) in a modulation-doped GaAs/Al _x Ga_{1? x} As superlattice is considered. This superlattice may be analogous to the layered electronic structure of high-T _c superconductors. In the structures of interest, the mean spacing between nearest electron (or hole) wells is the same as the mean distance between the electrons (or holes) in any given well. This geometrical relationship mimics a prominent property of optimally doped high-T _c superconductors. Band bending by built-in electric fields from ionized donors and acceptors induces electron and heavy-hole bound states in alternate GaAs quantum wells. A proposed superlattice structure meeting this criterion for superconductivity is studied by self-consistent numerical simulation.     

High-Moment-Low-Moment Description of Magnetovolume Effects in Y(Mn x Al 1− x ) 2 and Y x Sc 1− x Mn 2

Based on the assumption of a high-moment-low-moment instability of the Mn atom, we construct a simple spin model with coupled magnetic and spatial degrees of freedom to describe the Laves phase systems Y(Mn x Al 1 m x ) 2 and Y x Sc 1 m x Mn 2 . Monte Carlo simulations of this model qualitatively reproduce anomalies observed in these materials like a discontinuous giant volume change and anomalous thermal expansion behavior.     

Optical Properties of High Pressure Phases in ZnTe 1− x Se x

We report on the optical properties of high pressure semiconducting phases in ZnTe 1 m x Se x . In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV. In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.     

Magnetic cluster developement in In1−x Mn x Sb semiconductor alloys

X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM) and magnetic measurements as a function of applied magnetic field and temperature for In_1?x Mn _x Sb (0.05≤x≤0.2) system are reported. Magnetic measurements performed at high and small magnetic field in ZFC and FC indicate the coexistence of ferromagnetic In_1?x Mn _x Sb solid solution and two types of magnetic cluster: ferromagnetic MnSb and ferrimagnetic Mn₂Sb. XPS valence band and Mn 2p core level spectra have confirmed the presence of MnSb and Mn₂Sb phases. TEM images show some manganese antimonide phase microinclusions with dimension between (30–40) nm.     

Thermovoltaic effect in samarium sulfide-based Sm1 − x Eu x S heterostructures

The thermovoltaic effect in samarium sulfide-based Sm_{1 ? x} Eu _x S bulk heterostructures in the temperature interval 300–520 K is considered. It is shown that this effect is due to an artificially produced samarium ion concentration gradient, rather than to an external temperature gradient.     

Phase analysis in Zn1− x Cr x O through charge density

Cr-doped zinc oxide Zn_{1? x} Cr _x O powder samples are synthesized by a standard high-temperature solid-state reaction technique with x?=?0.00, 0.04, and 0.08. The powders are analyzed for the electron densities using X-ray diffraction. The electron densities of observed wurtzite phase ZnO as well as the spinel phase ZnCr₂O₄ are mapped and analyzed for Cr doping concentration. The charge density study reveals that the Cr atom is added in the lattice as Cr³⁺ rather than Cr²⁺.     

Facet formation in strained Si1−x Gex films

The surface morphology of epitaxial (001) Si_1−x Ge_x films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.     

Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Photosensitive In-n ⁺-CdS-n-CdS _x Te_{1 ? x} -p-Zn _x Cd_{1 ? x} Te-Mo film structures based on II–VI semiconductors and operating in the wavelength range λ = 0.490–0.855 μm have been fabricated. These structures in the forward current direction at high bias voltages operate as injection photodiodes and exhibit a high integrated sensitivity S _int ≈ 700 A/lm (14500 A/W) at room temperature. It has been found that, in the fabricated structures at low illuminance levels and low forward bias voltages (0.05–0.50 V), the diffusion and drift fluxes of nonequilibrium charge carriers are directed toward each other. This effect leads to the sign reversal of the photocurrent, which makes it possible on the basis of these structures to create selective photodetectors with injection properties. In the reverse direction of the photocurrent, these structures also operate in the mode of internal amplification of the primary photocurrent, but the integrated sensitivity in this mode is considerably less than that in the forward current direction.     

Superconductivity in the Ba1−x LaxPbO3 system

An analysis of the relationship between the local crystal and electronic structure of the Ba_1?x K_xBiO₃ and BaPb_1?x Bi_xO₃ perovskite systems, which was made in terms of an empirical model based on EXAFS spectroscopy studies of the above compounds, led to the conclusion that superconductivity is possible in the Ba_1?x La_xPbO₃ system. The Ba_1?x La_xPbO₃ multiphase compound synthesized at a pressure of 6.7 GPa was found to contain a superconducting phase with a critical temperature T _c ?11 K.