光学偶极阱中铷原子5S_(1/2)及5P_(3/2)态的AC Stark频移

基于二能级模型和多能级模型,分析计算了由强聚焦高斯光束形成的光学偶极阱中87Rb原子5S1/2态和5P3/2态的AC Stark频移。基于多能级模型,针对在852 nm高斯激光束强聚焦所形成的87Rb原子远失谐光学偶极阱中进行偏振梯度冷却的情形,计算了冷却循环跃迁(5S1/2F=2-5P3/2F′=3)的频移量,结果显示频移对molasses冷却过程产生了重要的影响。同时,计算了5S1/2|F=2,mF=±2〉态和5P3/2|F′=3,mF=±3〉态的AC Stark频移随光学偶极阱激光波长的变化情况,发现在红失谐情况下,对于87Rb原子5S1/2-5P3/2态跃迁不存在魔数波长。     

蓝移阱中单个铯原子基态磁不敏感态的相干操控

单个中性原子的超精细微波跃迁能级的相干性是基于中性原子量子计算、量子信息处理和量子模拟的基础.我们在实验上利用微波双光子拉曼过程实现了蓝移阱中铯原子基态超精细态|6S1/2,F=3,mF=-1〉和|6S1/2,F=4,mF=1〉间的相干操控,并研究了其相对能级频移随磁场的变化,获得了"魔术"磁场的大小为1.4(2)Gauss(1 Gauss=10-4 T).结果表明,利用魔术磁场可大幅改善超精细态|6S1/2,F=3,mF=-1?和|6S1/2,F=4,mF=1〉之间的相干性,测量到的相干时间可达1.0(1)s.     

铯原子磁光阱中冷原子的缀饰态光谱

在磁光阱中的铯原子由于冷却光的存在将被缀饰化。借助于波长为852.3 nm(对应于铯原子6S1/2F=4→6P3/2F′=3和6S1/2F=4→6P3/2F′=4超精细跃迁)和794.6 nm(对应于铯原子6P3/2F′=5→8S1/2F″=4超精细跃迁)的探测光的透射光谱分别对磁光阱中冷原子基态6S1/2F=4和激发态6P3/2F′=5在冷却光作用下形成的缀饰态分裂进行了实验研究,并分析了其光谱特性。结果表明,在冷却光强度、失谐量相同的实验条件下,基态、激发态的缀饰分裂间距相同,与缀饰态理论预言一致。     

~(87)Rb玻色-爱因斯坦凝聚体的快速实验制备

采用二维磁光阱产生了-个快速~(87)Rb原子流,并在高真空的三维磁光阱中实现了~(87)Rb原子的快速俘获,进一步采用射频蒸发冷却技术实现了原子云的预冷却,然后将原子转移到远失谐的光学偶极阱中蒸发得到了玻色-爱因斯坦凝聚体.实验上可以在25 s内完成三维磁光阱的装载(约1.0×10~(10)个~(87)Rb原子),然后经过16 s的冷却过程最终在光学偶极阱中获得5.0×10~5个原子的玻色-爱因斯坦凝聚体.实验重点研究了二维磁光阱的优化设计和采用蓝失谐大功率光束对四极磁阱零点的堵塞,抑制四极磁阱中原子的马约拉纳损耗,更加有效地对原子云进行预冷却.     

铯原子D2线调制转移光谱及其在激光器锁频中的应用

在铯原子气室磁光阱(VC-MOT)及超高真空磁光阱(UHV-MOT)实验中,需要将冷却和俘获激光负失谐锁定于铯原子D2线的62S1/2F=4→62P3/2F′=5超精细跃迁线处.     

采用高信噪比电磁诱导透明谱测定~(85)Rb原子5D_(5/2)态的超精细相互作用常数

基于~(85)Rb原子5S1/2-5P3/2-5D_(5/2)阶梯型能级系统(780 nm+776 nm),利用高信噪比的电磁诱导透明谱对~(85)Rb原子5D_(5/2)态超精细分裂进行测量.其中,频率校准是通过位相型电光调制器和共焦法布里-珀罗腔共同实现的.通过测量~(85)Rb原子5D′5/2态(F′=5),(F′′=4)及(F′′=3)之间的超精细分裂,我们确定了~(85)Rb原子5D_(5/2)态的磁偶极超精细相互作用常数(A=-(2.222±0.019)MHz)和电四极超精细相互作用常数(B=(2.664±0.130)MHz).     

基于磁悬浮大体积交叉光学偶极阱的Dimple光阱装载研究

三维拉曼边带冷却后的铯原子样品装载于一个磁悬浮的大体积交叉光学偶极阱中, 继续加载一个小体积的光学偶极阱后, 实现了Dimple光学偶极阱对铯原子的高效装载. 对不同磁场下磁悬浮大体积光阱的有效装载势能进行理论分析与实验测量, 得出最优化的梯度磁场和均匀偏置磁场, 获得了基于磁悬浮大体积光阱的Dimple光学偶极阱的装载势能曲线, 实现了Dimple光学偶极阱对经拉曼边带冷却后俘获在磁悬浮的大体积光阱中的铯原子样品的有效装载. 比较了Dimple光学偶极阱分别从拉曼边带冷却、大体积的交叉光阱和消除反俘获势后的磁悬浮大体积光阱装载的结果, 将俘获在磁悬浮大体积光阱中的铯原子样品装载到Dimple光学偶极阱, 铯原子样品的密度提高了约15倍.     

玻色-费米气体量子简并光学偶极阱的设计

实现了将预冷却(温度约为1～2μK)的87 Rb和40 K原子装载到远红失谐的光学偶极力阱中,继而利用逐步降低光强的方法对其进行蒸发冷却,获得了87 Rb原子的玻色-爱因斯坦凝聚(BEC),并用协同冷却的方法得到了40 K原子的量子简并(DFG)。实验上通过光纤传输远红失谐激光束降低了光束指向性的抖动,又利用光强反馈伺服系统抑制远红失谐激光的强度抖动,提高了获得玻色-爱因斯坦凝聚和简并费米气体的重复性和稳定性。实验上得到玻色-爱因斯坦凝聚的原子数达8.48×105个,简并费米气体的原子数量约为3.34×106个。     

一种低速、连续、单色性好的冷原子束

本文提出一种利用磁光阱冷却捕获技术制备低速、连续、单色性好原子束的方法及技术.采用3维磁光阱从背景Rb蒸汽中捕获Rb87原子进行冷却、捕获形成原子云团,利用在纵向方向上结构设计的小孔将冷原子云团推出形成冷原子束,并在原子束行进方向上采用2维光学黏胶对原子束进行准直,采用态制备激光对其进行态制备,全部制备到Rb87原子的基态能级|F=1>上,从而为原子惯性技术(原子干涉仪、原子重力仪、原子加速度计)、原子频标(原子钟)提供低速、连续、单色性好的原子束.文章对于制备技术的实验系统及实验结果进行了详细的阐述.     

利用激光诱导后向荧光测定Rb[5P_(3/2)(F′=4)]在金属膜附近的非辐射跃迁率

利用激光诱导后向荧光光谱研究了Rb蒸气-玻璃界面的85Rb[5P3/2（F′=2,3,4）→5S1/2（F=3）]超精细结构跃迁。把界面分为2个不同的区域,靠近表面厚度约为一个波长的近区和远区（蒸气区域）,近区起光谱滤波器的作用。将激光分为二束,一束作为检测光通过一个室温下的Rb参考样品池,得到5S1/2（F=3）→5P3/2（F′=2,3,4）半宽为510 MHz的Doppler吸收线,其中心离F=3→F′=4跃迁约为70 MHz。另一束激光进入温度为130℃的Rb样品池,记录共振后向荧光Sob（νL）,将它减去远区辐射的荧光ST（νL）,得到近区辐射的荧光senxp（νL）,它是具有半宽ΓRF=50 MHz的Lorentz线型,而ΓRF=Γn＋cΓoll＋Γnr,Γn为谱线的自然增宽,cΓoll=γRb-RbN为碰撞增宽,γRb-Rb为增宽系数,N为Rb基态密度,Γnr为玻璃表面激发态原子的非辐射能量转移引起的附加增宽,由此得到非辐射跃迁率为AnFr′=4→F=3=2.4×10^8s^-1,它远大于自发辐射率A（5P3/2→5S1/2）=1.4×107s^-1。     

Non-doped red to yellow organic light-emitting diodes with an ultrathin 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) layer

In this letter, bright non-doped red to yellow organic light-emitting diodes (OLEDs) with ultrathin 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) layer as the emitting layer were fabricated. It was investigated that the effect of the ultrathin DCJTB layer on the electroluminescent (EL) performance of OLEDs. The DCJTB layer was incorporated at different positions in the conventional tris(8-quinolinolato)-aluminum (AlQ)-based devices (ITO/NPB/AlQ/LiF/Al). The emission of DCJTB was dominative in the EL spectra of the devices, in which the position of 0.3 nm DCJTB layer was less than 10 nm from the NPB/AlQ interface. The EL peak emission of DCJTB shifted to blue side as DCJTB position moved gradually from AlQ to NPB layer. The highest brightness of the device with 0.3 nm DCJTB layer inserted into NPB reached 16,200 cd/m² at 15 V, with the CIE coordinates of (0.522, 0.439).     

Electron-stimulated desorption of D (H) from condensed D2O (H2O) films

The electron-stimulated desorption (ESD) of D⁻ and H⁻ ions from condensed D₂O and H₂O films is investigated. Three low-energy peaks are observed in the ESD anion yield, which are identified as arising from excitation of ²B₁, ²A₁ and ²B₂ dissociative electron attachment (DEA) resonances. Additional structure is observed between 18 and 32 eV, which may be due to ion pair formation or to DEA resonances involving the 2a₁ orbital. The ion yield resulting from excitation of the ²B₁ resonance increases as the film is heated. We attribute the increase in the ion yield to thermally induced hydrogen bond breaking near the surface, which enhances the lifetimes of the excited states that lead to desorption.     

(Lu,Y)2SiO5∶Ce3+与SrSO4∶Dy3+材料低温热释光及其测试仪器的研究

为了分析材料在低温下的陷阱能级,获得更多有关缺陷结构的信息,研制了一套由STM32微控制器为核心的低温热释光发光谱测量系统。设计了低温样品室,采用液氮冷却样品;STM32通过控制加热电流,实现样品以恒定速率升温,从而获得低温热释光发光曲线或三维热释光谱。温度测量范围为85~400 K,升温速率范围为0.1~10 K/s。设计了由STM32控制X射线及紫外光源的驱动电路,用于样品的激发。采用高灵敏度CCD实现对三维热释光谱的测量,采用单光子计数器获取二维热释光发光曲线。利用该系统测试了（Lu,Y）₂SiO₅:Ce³⁺（LYSO:Ce³⁺）单晶闪烁体与SrSO₄:Dy³⁺粉末样品的热释光谱及辐射发光光谱。观察到LYSO:Ce³⁺在108,200,380 K左右的热释光峰,发光波长位于390~450 nm之间,是明显的宽带峰。在低温下由于基质的自陷激子（STE）发射所形成的发射峰在166 K时发生猝灭。在309 K时,Ce³⁺发射峰展宽为单一发射峰;SrSO₄:Dy³⁺发光峰温度为178,385 K,发光波长由Dy³⁺离子的能级跃迁决定,在480,575,660,750 nm处呈现窄带发光峰。结果表明,系统人机交互界面友好,实验数据可靠,智能化程度高,操作简单。     

Dielectric and ferroelectric properties of the mixed crystals system (CH3NH3)5Bi2(1 − x)Sb2xCl11

Dielectric and pyroelectric properties of the mixed crystals system, (CH₃NH₃)₅Bi_{2(1 − x)}Sb_2xCl₁₁ (0 < x < 0.25) were systematically investigated. Temperature dependencies of ′_c in the vicinity of ferro-paraelectric phase transition were measured for the mixed crystals with x = 0.05, 0.07, 0.11, 0.13 and 0.25 in the frequency region 1 kHz–1 MHz. The substitution of bismuth atoms by antimony drastically reduces the magnitude of ′_c and shifts the ferro-paraelectric phase transition towards higher temperatures. The dielectric dispersion of the complex electric permittivity, _c^*, in x = 0.05 crystals was studied in the frequency range from 30 to 1000 MHz. Around 321 K phase transition, two dielectric relaxators are postulated; a low-frequency one in the megahertz region showing a critical slowing down and a high-frequency one in the gigahertz region.     

Crystal structure and thermal behavior of two new organic monosulfates NH3(CH2)5NH3SO4 1.5H2O and NH3(CH2)9NH3SO4 H2O

The chemical preparation, the calorimetric studies and the crystal structure are given for two new organic sulfates NH₃(CH₂)₅NH₃SO₄ 1.5H₂O (DAP-S) and NH₃(CH₂)₉NH₃SO₄·H₂O (DAN-S). DAP-S is monoclinic P2₁/n with unit cell dimensions: a=11.9330(2) Å; b=10.9290(2) Å; c=17.5260(2) Å; β=101.873(1)°; V=2236.77(6) Å³; and Z=8. Its atomic arrangement is described as inorganic layers of units and water molecules separated by organic chains. DAN-S is monoclinic P2₁/c with unit cell parameters: a=5.768(2) Å; b=25.890(10) Å; c=11.177(5) Å; β=115.70(4)°; V=1504.0(11) Å³ and Z=4. Its structure exhibits infinite chains, parallel to the [100] direction where the organic cations are interconnected. In both structures a network of strong and weak hydrogen bonds connects the different components in the building of the crystal.     

Crystal structure,ionic conductivity and dielectric relaxation studies in the (C5H10N)2BiBr5 compound

The synthesis and crystal structure of the bis (3-dimethylammonium-1-propyne) pentabromobismuthate(III) salt are given in the present paper. After an X-ray investigation, it has been shown that the title compound crystallizes at 298 K in a centrosymmetric monoclinic system, in the space group C₂/c with the following lattice parameters a=12.9034(3) Å, b=19.4505(6) Å, c=8.5188(2) Å, β=102.449(2). Not only were the impedance spectroscopy measurements of (C₅H₁₀N)₂BiBr₅ carried out from 209 Hz to 5 MHz over the temperature range of 318 K–373 K, but also its ac conductivity evaluated. Besides, the dielectric relaxation was examined using the modulus formalism. Actually, the near values of activation energies obtained from the impedance and modulus spectra confirms that the transport is of an ion hopping mechanism, dominated by the motion of the H⁺ ions in the structure of the investigated material.     

Effects of copper concentration on electro-optical and structural properties of chemically deposited nanosized (Zn-Cd)S:Cu films

Nanocrystalline (Zn-Cd)S films have been co-deposited on glass slide substrates by chemical bath deposition (CBD) technique at 70 °C for 75 min. Electroluminescent (EL), photoluminescent (PL) and structural characteristics of these films doped with Cu have been investigated. Cu doping has significant effects on the growth, structural and optical properties of the deposited (Zn-Cd)S films. EL studies show the essentiality of copper for EL emission. The effect of Cu concentration is examined on XRD, SEM, UV-vis spectroscopy, etc. The morphology of these films investigated with SEM and XRD is used to determine crystalline nature of the films. The optical absorption coefficient of the films has been found to increase with increase in Cu concentration. Voltage and frequency dependence shows the effectiveness of acceleration-collision mechanism. The trap-depth values are calculated from temperature dependence of EL brightness.     

Normal coordinate analysis and quantum chemical study of tris(p-fluorophenyl)antimony di(N-phenylglycinate) [(p-FC6H4)3Sb(O2CCH2NHC6H5)2]

A complete normal coordinate analysis was performed by two different methods: a classical Wilson’s G-F matrix method and the semi-empirical molecular orbital PM3 method, for a five coordinate tris(p-fluorophenyl)antimony di(N-phenylglycinate) [(p-FC₆H₄)₃Sb(O₂CCH₂NHC₆H₅)₂], known to be an in vitro antitumour molecule.      

Electronic properties of (3/2 × 3/2)-Na/Cu(1 1 1)

High-resolution electron energy loss spectroscopy was used to study the electronic properties of (3/2 × 3/2)-Na/Cu(1 1 1) at room temperature. Loss spectra showed two-well distinct losses at 114 and 180 meV assigned to not dispersive charge density waves. Mechanisms to explain their existence are proposed. Moreover, the expected 2D plasmon of the Na quantum well state was not observed. The strong influence of the underlying Cu substrate may be responsible for the absence of such mode.     

CN（B~2Σ~＋）激发态光谱的研究

研究亚稳态原子Ｈｅ（２３Ｓ）与ＣＨ３ＣＮ的能量转移反应，获得了ＣＮ（Ｂ２Σ＋－Ｘ２Σ＋）的近紫外辐射光谱。根据光谱强度，研究了ＣＮ（Ｂ２Σ＋）的形成速率和振动布居，并探讨了传能反应机理。