Thermal Stability of CoFe/Cu/CoFe/IrMn Top Spin Valve

We present a study of thermal stability of the top spin valve with a structure of seed Ta （Snm）/Co75Fe25 （5 nm ） /Cu （2.5 nm） /Co75Fe25 （5 nm ） /Ir20Mn80（12 nm） /cap Ta （8 nm） deposited at room temperature by magnetron sputtering. A vibrating sample magnetometer fixed with a heater was used to record the magnetic hysteresis loops at variational temperatures and x-ray diffraction was performed to characterize the structure of the multilayer. The exchange field Hex and the coercivity of the pinned CoFe layer Hop decrease monotonically with increasing temperature. The coercivity of the free CoFe layer Hcf in the spin valve shows a maximum at 498K. The temperature dependences of Hex, Hop and Hcf have also been discussed.     

Antiferromagnetically coupled multilayers of (Co90Fe10 tF/Ru tRu)×N and (Ni81Fe19 tF/Ru tRu)×N prepared by ion beam deposition

This work describes multilayers of Co₉₀Fe₁₀ t_F/Ru t_Ru/Co₉₀Fe₁₀ t_F and Ni₈₁Fe₁₉ t_F/Ru t_Ru/Ni₈₁Fe₁₉ t_F (20 Åt_F200 Å) prepared at ambient temperature by ion beam deposition on Si/SiO₂ 3 kÅ substrates. The samples exhibited a maximum antiferromagnetic coupling with t_Ru=3.2 Å and M–H curves characterized by zero remanent magnetic moment and enhanced saturation field. Antiferromagnetic peaks were present with t_Ru17 and 30 Å.     

BiFeO3/Ni81Fe19磁性双层膜中的交换偏置及其热稳定性研究

研究了磁场诱导生长的BiFeO₃/Ni₁₈Fe₁₉磁性双层膜中 的交换偏置及其热稳定性. 结果表明: BiFeO₃/Ni₁₈Fe₁₉双层膜中的交换偏置场H_ex未表现出明显的磁练习效应. 在负饱和磁场等待过程中, BiFeO₃/Ni₁₈Fe₁₉双层膜磁滞回线的前支和后支曲 线都随着在负饱和磁场中等待时间t_sat的增加向正场方向偏移. 交换偏置场H_ex的大小随着等待时间t_sat的增加而减小, 矫顽力H_c基本不变. 交换偏置场H_ex的大小随测量温度T_m的升高变化不明显, 表现出良好的热稳定性; 但矫顽力H_c随T_m的升高而显著减小. 良好的热稳定性应该来源于铁电性和反铁磁性间的共同耦合作用. 关键词： 多铁性 磁性薄膜 交换偏置 热稳定性     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Rotational magnetization processes in exchange biased Ni81Fe19/Fe50Mn50 bilayers

The rotational magnetization process of an exchange coupled Ni₈₁Fe₁₉(10 nm)/Fe₅₀Mn₅₀(10 nm) bilayer was studied by Kerr microscopy. The domain processes in rotating magnetic fields near the exchange bias field H_eb are very sensitive to local variations of coupling strength and direction. A characteristic domain splitting was found that shows a remarkably different behavior for weaker and stronger coupled areas. While the magnetization in weaker coupled areas follows the rotating field for H≈H_eb, the stronger coupled areas switch back spring-like. As a result high-angle walls are formed between both areas causing rotational hysteresis.     

Co/Co3O4/PZT多铁复合薄膜的交换偏置效应及其磁电耦合特性

本文采用溶胶-凝胶工艺并结合脉冲激光沉积技术, 在Pt/Ti/SiO₂/Si衬底上制备了Co/Co₃O₄/PZT多铁复合薄膜. 对复合薄膜的微结构和组分进行了表征, 并系统研究了复合薄膜中的交换偏置效应及其对磁电耦合作用的影响. 研究结果表明, 复合薄膜在77 K具有明显的交换偏置效应, 交换偏置场达到80 Oe, 且交换偏置场及矫顽场均随温度降低而增大. 当温度降低到10 K时, 交换偏置场增至160 Oe. X射线光电子能谱(XPS)测试结果证实在Co和Co₃O₄界面处存在约5 nm厚的CoO层, 表明77 K下的交换偏置效应源自反铁磁的CoO层对Co的钉扎作用. 观察到复合薄膜的电容-温度曲线随着外加磁场大小和方向的改变而呈现出规律性的变化, 表明复合薄膜存在磁电耦合效应. 进一步研究发现, 在低温下复合薄膜呈现出各向异性的磁电容效应, 与磁场大小和方向密切相关. 复合薄膜的这种磁电耦合特性主要与复合体系的交换偏置效应及基于界面应力传递的磁电耦合作用有关, 本文对其中的物理机理进行了详细讨论与分析.     

Nd-Ce-Fe-B纳米复合薄膜的磁性及交换耦合作用

采用磁控溅射技术制备了具有永磁特征的Nd-Ce-Fe-B多层纳米复合薄膜,并对其进行了退火处理.通过改变退火温度,研究其对薄膜磁性能和晶体结构的影响.结果表明,随着退火温度的提高薄膜磁性能逐渐增大,但当温度达到695℃以上时,薄膜的磁性能急剧下降.当退火温度为675℃时,薄膜的矫顽力Hci=10.1 kOe(1Oe=79.5775 A/m),垂直于薄膜表面方向的剩余磁化强度4πM_(r⊥)=5.91 kG(1 G=10~3/(4π)A/m).薄膜的X射线衍射结果表明,磁性薄膜具有较好的c轴取向.通过对薄膜磁化反转过程的研究,发现随着外加磁场的增大,M_(rev)的极小值向M_(irr)减小的方向移动,这与畴壁弯曲模型类似,表明在薄膜中存在较强烈的局部钉扎作用,而剩余磁化强度曲线表明这种钉扎作用在薄膜矫顽力机制中并不占支配作用.此外,薄膜的Henkel曲线结果表明在薄膜中存在较强的交换耦合作用,在经过685℃退火的薄膜中磁相互作用更加显著.     

Temperature dependence of spin pumping in YIG/NiOx/W multilayer

We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.     

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀)and the topological insulator/ferromagnet(Bi₂Se₃/Ni₂₀Fe₈₀).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.     

薄膜异质结中磁性斯格明子的相关研究

磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.     

The BCC to FCC/HCP phase transformation of the Co70Fe30 alloy produced by ion irradiation of Co70Fe30/Cu discontinuous multilayers

We report on the BCC to FCC/HCP structural transformation of Co₇₀Fe₃₀ alloy produced by room temperature ion irradiation of Co₇₀Fe₃₀/Cu discontinuous multilayers. The structural changes were analyzed by X-ray diffraction and X-ray absorption spectroscopy. For this study, two different samples were examined, one irradiated with 50 keV He⁺ and another with 600 keV Kr⁺ with doses of 1×10¹⁷ and 3×10¹⁵ ions/cm², respectively. No substantial change is observed after He⁺ irradiation, while after Kr⁺ irradiation an unexpected structural transition from BCC to FCC/HCP closed packed of the Co₇₀Fe₃₀ alloy was found.     

Bi对自旋阀钉扎场的影响及机理

实验发现将Bi插入自旋阀多层膜TaNiFeCuBi(x)NiFeFeMn中可以显著地提高自旋阀的钉扎场Hex.采用XPS对Cu,Bi元素的分布情况进行了研究,发现Bi的插入明显抑制了Cu原子在自旋阀的制备过程中在NiFeFeMn界面的偏聚.进一步研究表明:自旋阀钉扎层NiFeFeMn界面中,Cu原子的存在是导致自旋阀Hex小于TaNiFeFeMn多层膜Hex的主要原因. 关键词： 自旋阀 钉扎场 交换各向异性 表面活化剂     

300% magnetocurrent in a room temperature operating spin-valve transistor

Here we present the realization of a room temperature operating spin-valve transistor with huge magnetocurrent (MC=300%) at low fields. This spin-valve transistor employs hot-electron transport across a Ni₈₁Fe₁₉/Au/Co spin valve. Hot electrons are injected into the spin valve across a Si–Pt Schottky barrier. After traversing the spin valve, these hot electrons are collected using a second Schottky barrier (Si–Au), which provides energy and momentum selection. The collector current is found to be extremely sensitive to the spin-dependent scattering of hot electrons in the spin valve, and therefore on the applied magnetic field. We also illustrate the role of the collector diode characteristics in determining the magnetocurrent under collector bias.     

FORMATION AND MAGNETIC PROPERTIES OF NEW COMPOUNDS R3Fe29-xCrx(R=Y,Ce,Nd,Sm,Gd,Tb,and Dy)

A systematic investigation of structure and magnetic properties of the new R₃Fe_29-xCr_x compounds(R=Y,Ce,Nd,Sm,Gd, Tb,and Dy)has been performed. The Curie temperature of R₃Fe_29-xCr_x increased with increasing atomic number fromR=Ce to Gd and de creased from Gd to Dy. The saturation magnetization of R₃Fe_29-xCr_x at 4.2 K decreased gradually with increasing atomic number from R=Y to Dy,except for Ce. The spin reorientations of the easy magnetization d irection were observed at around 230 K for Nd₃Fe_24.5Cr_4.5 and 180 K for Tb₃Fe_28.0Cr_1.0,and the magnetohistory effects were obser ved for Nd₃Fe_24.5Cr_4.5 and Sm₃Fe_24.0Cr_5.0 in a low field of about 0.04 T. First order magnetization process occurs in magnetic field of around 2.3 T at room temperature for Tb₃Fe_28.0Cr_1.0. The saturation magnetization of Y₃Fe_27.2Cr_1.8 at 4.2 K is 52.2μ_B/f.u., which corresponds to an average magnetic moment of 1.92μ_B per each Fe atom.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Huge exchange-coupling field observed in FeMn-pinned spin valve with ultra-thin pinned NiFe layer

A conventional Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayer was prepared to investigate the exchange bias variations of the pinned NiFe layer. An exchange bias field of 560 Oe has been found in a valve multilayer with ultra-thin pinned NiFe layers (1 nm), in which a large constant magnetic field of 700 Oe was applied during film deposition procession. The observed results are attributed to the large applied magnetic field, which produced more net spins of the antiferromagnet at the interface. These interfacial uncompensated spins provide the net spin moments required for exchange coupling and bias.     

Exchange coupling effects in NiO/Co and NiO/permalloy bilayers

NiO/Co and NiO/Ni₈₀Fe₂₀ bilayers were prepared at 293 onto SiO₂(1 0 1)/Si(1 1 1) and glass substrates using UHV (5×10⁻¹⁰ mbar) RF/DC magnetron sputtering. Results on magnetic measurements showed that the exchange biasing and coercive fields are inversely proportional to the Co and Ni₈₀Fe₂₀ (Py) layer thickness down to 2 nm. A maximal RT coupling energy for the NiO–Co and NiO–Py interface was estimated as 0.04 and 0.03 mJ/m² for the samples prepared onto SiO₂(1 0 1)/Si(1 1 1) substrates.     

垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

STRUCTURE AND MAGNETIC PROPERTIES OF NITRIDES R3Fe29-xCrxN4

A systematic investigation of nitrides R₃Fe_29-xCr_xN₄(R=Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. The nitrogen concentration in the nitride R₃Fe_29-xCr_xN_y was determined to be y=4. Nitrogenation leads to a relative volume expansion of about 5.3%. The lattice constants and unit cell volume decrease with in creasing rare earth atomic number from Nd to Dy, reflecting the lanthanide contraction. In average, the increase of Curie temperature upon nitrogenation is about 200 K, compared with its parent compound. The nitrogenation also results in a remarkable improvement in the saturation magnetization and anisotropy fields for R₃Fe_29-xCr_xN₄ at 4.2 K and room temperature, comp ared with their parent compounds. A spin reorientation of Nd₃Fe_24.5 Cr_4.5N₄ occurs at around 368 K, which is 138 K higher than that of Nd₃Fe_24.5Cr_4.5.Magnetohistory effects of R₃Fe_29-xCr_xN₄(R=Nd and Sm) are observed in a low field of 0.04 T. First order magneti zation process occurs in Sm₃Fe_24.0Cr_5.0N₄ in magnetic fields of around 3.0 T at 4.2 K. After nitrogenation the easy magnetization direction of Sm₃Fe_24.0Cr_5.0 is changed from the easy cone structure to the uniaxial. The excellent intrinsic magnetic properties of Sm₃Fe_24.0Cr_5.0N₄ make this compound a hopeful candidate for new high performance permanent magnets.