Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.     

A fast method to diagnose phase transition from amorphous to microcrystalline silicon

A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.     

Concurrent Structural and Electronic Phase Transitions in V_2O_3 Thin Films with Sharp Resistivity Change

The relationship between structural and electronic phase transitions in V_2O_3 thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT) and related technological applications.Despite being extensively studied, there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far. Using V_2O_3 thin films grown on γ-plane Al_2O_3 substrates,which exhibit abrupt MIT and structural phase transition, we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements. Our result provides experimental evidence for clarifying this issue, which could form the basis of theoretical studies as well as technological applications in V_2O_3.     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.     

Growth and structural characteristics of metastable β-In_2Se_3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Epitaxial growth and structural characteristics of metastable β-In_2Se_3 thin films on H-terminated Si(111) substrates are studied. The In_2Se_3 thin films grown below the β-to-α phase transition temperature(453 K) are characterized to be strained β-In_2Se_3 mixed with significant γ-In_2Se_3 phases. The pure-phased single-crystalline β-In_2Se_3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In_2Se_3 within the phase equilibrium temperature window ofβ-In_2Se_3. It is suggeted that the observed γ-to-β phase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In_2Se_3 thin-film system at a state far from thermodynamic equilibrium.     

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si（001） substrate

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films.In this paper,Co films with different thickness of Co Si2buffer layers were grown on Si(001)substrates.In order to investigate morphology,structure,and magnetic properties of films,scanning tunneling microscope(STM),low energy electron diffraction(LEED),high resolution transmission electron microscopy(HRTEM),and surface magneto-optical Kerr effect(SMOKE)were used.The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2buffer layers.Few Co Si2monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality.Furthermore,the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process,which is the typical phenomenon in cubic(001)films.     

Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.     

Switching Properties and Phase Transition Mechanism of Mo^6＋—Doped Vanadium Dioxide Thin Films

Using V2O3 and MoO3 powders as precursors,a novel preparation method,i.e.,the so-called inorganic solgel,is developed to synthesize Mo^6 -doped vanadium dioxide(VO2) thin films.The structure,valence state,phase transition temperature and magnitude of resistivity change are characterized by x-ray diffraction,x-ray photoelectron spectroscopy and the four-point equipment.The results show that the main chemical composition of doped thin films was VO2,the sturcture of MoO3 in doped thin films did not change,and the phase transition temperature of doped thin films was obviously lowered with the increasing MoO3 doped concentration,but the magnitude of resistivity change was also decreased.However.so long as MoO3 doped concentration was not more than 5wt%.,the magnitude of resistivity change of doped thin films still reached more 2 orders.The analysis show that MoO3 dissolved in crystal structure of VO2 formed the donor defect MOv^x and then reduced the forbidden band width,which lowered the phase transition temperature,Consequently it was widened applications of the VO2 thin films.     

Simulation of Anisotropic Resistivity for Mixed-Phase Manganite La2／3Ca1／3MnO3 Thin Films

We utilize the random network model based on phase separation scenario to simulate the conductive behaviour and anisotropic characteristics of resistivity for La2/3Ca1/3MnO3 (LCMO) thin films. The simulated results agree well with our experimental data, showing a metal-to-insulator transition from a high-T paramagnetic (PM) insulating phase to a low-T ferromagnetic (FM) metallic phase in both the untilted film deposited on a (001) SrTiO3 (STO) substrate and the tilted film grown on a vicinal cut STO substrate. It is found that the resistivity of the tilted sample is higher than that of the untilted one, displaying prominent anisotropic characteristics. The studies reveal that the tilting not only decreases the conduction of the FM domains, but also increases the activation energy of the PM regions, inducing the enhancement of resistivity. All those results suggest that the intrinsic inhomogeneity in the phase separation system plays a significant role in the electrical conductivity and the resistive anisotropy is related to the structure of the crystal lattice.     

Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 （001） substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3 thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy, as well as selected-area electron diffraction reveal that the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.     

Roles of Nano-Domain Switching and Non-180° Domains in Enhancing Local Piezoelectric Responses of Highly (100)-Oriented Pb(Zr_(0.60)Ti_(0.40))O_3 Thin Films

Ferroelectric Pb(Zr_(0.60)Ti_(0.40))O_3 thin films deposited on the niobium-doped SrTiO_3 and Pt(111)/Ti/SiO_2/Si substrates are fabricated by a sol-gel method.X-ray diffraction indicates that the films have a 'cube-on-cube'growth with highly(100)preferred orientation and good surface qualities.Using piezoelectric force microscopy,we investigate domain structures and butterfly amplitude loops of ferroelectric thin fims.The results indicate that the film deposited on Nb:SrTiO_3 has both kinds of 180° polarizations perpendicular or parallel to the surface while the film deposited on Pt/Ti/SiO_2/Si has irregular phase differences.Excellent piezoelectric polarization are observed in the films on niobium-doped SrTiO_3 with local d_(33)~* values around 45 pm/V three times more than that of the films around 13 pm/V deposited on Pt(111)/Ti/SiO2/Si. Our findings emphasize that nanodomain switching ability and non-180° domains will contribute significantly to enhance piezoelectric responses of ferroelectric thin films.     

Composition influence on the microstructures and magnetic properties of FePt thin films

The Fex Pt 100x (10nm) (x=31-51) thin films are fabricated on Si (100) substrates by using magnetron sputtering. The highly ordered L1 0 FePt phase is obtained after post-annealing at 700℃in Fe 47 Pt 53 thin film. The sample shows good perpendicular anisotropy with a square loop and a linear loop in the out-of-plane and the in-plane direction, respectively. The variations of the magnetic domains are investigated in the films when the content value of Fe changes from 31% to 51%.     

Evidence of polymorphic transformations of Sn under high pressure

The high-pressure polymorphs and structural transformation of Sn were experimentally investigated using angledispersive synchrotron x-ray diffraction up to 108.9 GPa. The results show that at least at 12.8 GPa β-Sn→bct structure transformation was completed and no two-phase coexistence was found. By using a long-wavelength x-ray, we resolved the diffraction peaks splitting and discovered the formation of a new distorted orthorhombic structure bco from the bct structure at 31.8 GPa. The variation of the lattice parameters and their ratios with pressure further validate the observation of the bco polymorph. The bcc structure appears at 40.9 GPa and coexists with the bco phase throughout a wide pressure range of40.9 GPa–73.1 GPa. Above 73.1 GPa, only the bcc polymorph is observed. The systematically experimental investigation confirms the phase transition sequence of Sn as β-Sn→bct→bco→ bco + bcc→bcc upon compression to 108.9 GPa at room temperature.     

Molecular beam epitaxy and superconductivity of stoichiometric FeSe and KxFe2_ySe2 crystalline films

Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.     

MBE Growth and Characterization of Strained Hg Te(111) Films on CdTe/GaAs

Strained Hg Te thin films are typical three-dimensional topological insulator materials. Most works have focused on Hg Te(100) films due to the topological properties resulting from uniaxial strain. In this study, strained Hg Te(111) thin films are grown on Ga As(100) substrates with Cd Te(111) buffer layers using molecular beam epitaxy(MBE). The optimal growth conditions for Hg Te films are determined to be a growth temperature of 160℃ and an Hg/Te flux ratio of 200. The strains of Hg Te films with different thicknesses are investigated by highresolution x-ray diffraction, including reciprocal space mapping measurements. The critical thickness of Hg Te(111) film on Cd Te/Ga As is estimated to be approximately 284 nm by Matthews' equations, consistent with the experimental results. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy investigations indicate that high-quality Hg Te films are obtained. This exploration of the MBE growth of Hg Te(111) films provides valuable information for further studies of Hg Te-based topological insulators.     

Transparent conductive reduced graphene oxide thin films produced by spray coating

Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide.The dispersion was produced by chemical reduction of graphene oxide,and the film thickness was controlled with the amount of spray volume.AFM measurements revealed that the thin films have near-atomically flat surface.The chemical and structural parameters of the samples were analyzed by Raman and XPS studies.It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region.The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 k?with a light transmittance of 68.69%at 550 nm.The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.     

Influence of the deposition parameters on the transition region of hydrogenated silicon films growth

Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasmaenhanced chemical vapour deposition （VHF PECVD） by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration （SC）, plasma power （Pw）, working pressure （P）, and substrate temperature （Ts）. Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase.     

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Vanadium dioxide(VO_2) is a strongly correlated material, and it has become known due to its sharp metal–insulator transition(MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO_2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO_2 thin film across MIT are probed by the time-domain thermoreflectance(TDTR) method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO_2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO_2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO_2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO_2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO_2 thin films by the TDTR method without depositing any metal thermoreflectance layer.     

High quality NbTiN films fabrication and rapid thermal annealing investigation

NbTiN thin films are good candidates for applications including single-photon detector, kinetic inductance detector, hot electron bolometer, and superconducting quantum computing circuits because of their favorable characteristics,such as good superconducting properties and easy fabrication.In this work, we systematically investigated the growth of high-quality NbTiN films with different thicknesses on Si substrates by reactive DC-magnetron sputtering method.After optimizing the growth conditions, such as the gas pressure, Ar/N_2 mixture ratio, and sputtering power, we obtained films with excellent superconducting properties.A high superconducting transition temperature of 15.5 K with narrow transition width of 0.03 K was obtained in a film of 300 nm thickness with surface roughness of less than 0.2 nm.In an ultra-thin film of 5 nm thick, we still obtained a transition temperature of 7.6 K.In addition, rapid thermal annealing(RTA) in atmosphere of nitrogen or nitrogen and hydrogen mixture was studied to improve the film quality.The results showed that Tc and crystal size of the NbTiN films were remarkably increased by RTA.For ultrathin films, the annealing in N_2/H_2 mixture had better effect than that in pure N2.The T_c of 10 nm films improved from 9.6 K to 10.3 K after RTA in N_2/H_2 mixture at 450℃.     

Influence of LiB3O5 Structure on Microstructure and Optical Properties of ZrO2 Thin Films Prepared by Electron Beam Evaporation

ZrO2 thin films were deposited by using an electron beam evaporation technique on three kinds of lithium triborate (LIB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural and optical properties of the film: namely, the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), rn(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.