High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

Control of p-type conductivity in Sr doped LaTiO3 thin films

We report on in situ growth by pulsed laser deposition of Sr-doped LaTiO₃ (Sr, 0<x<0.1) thin films, with epitaxial c-axis perovskite structure. According to the increase of Sr doping, resistivity of samples decreases and films reveal metallic behaviour. We found that both crystallographic and electrical properties are very sensitive to oxygen pressure during the deposition. The charge carrier was found to be p-type for Sr doping from 0 to 10% and mobility is much higher than previously reported.     

Implication of local moment at Ti and Fe sites for the electrical and magneto-transport properties of degenerate semiconducting Ti?-xFexO?-d epitaxial films

We have investigated the effect of local magnetic moment on the electrical and magneto-transport properties of thin films of the degenerate semiconductor Ti(1-x)Fe(x)O(2-d) (x = 0,0.04). The electrical measurements of these films reveal high temperature metallic behavior and resistivity minima. The behavior below the resistivity minimum temperature is ascribed to Kondo like scattering. The coupling between the local moment and the charge carriers is reflected in the magnetoresistance measurements in these films. This work indicates competition between the magnetic ordering mechanism by J(RKKY) and the moment screening mechanism by J(Kondo). Accordingly the role of carrier density in achieving the magnetic ordering in such materials either by defect engineering or by transition metal doping is discussed.     

Polaronic transport in TiO2 thin films with increasing Nb content

The temperature dependence of the charge transport in TiO₂ films was investigated to establish the correlation between the Nb content and electrical properties. It was identified that temperature-dependent conductivity of the films is dominated by a phonon-assisted small polaron hopping model in the non-adiabatic regime. Applying the polaron hopping models of Mott, Schnakenberg and Emin to describe the observed behavior, temperature-dependent conductivity data of the films were analyzed. A detailed analysis in terms of small polaron hopping parameters in the investigated temperature regime was used to correlate electrical properties with the percentage of Nb.     

Infrared reflectivity of Cox(SiO2)1−x (x∼0.85, 0.55, 0.38) granular films on SiO2 glass substrates

We report the infrared specular reflectivity of Co_x(SiO₂)_1−x (x∼0.85, 0.55, 0.38) films on SiO₂ glass spanning from a metal-like to insulating behavior. While films for x∼0.85 show carrier metallic shielding and hopping conductivity, for x∼0.65 and lower concentrations, the nanoparticles’ number and size promote a localization edge near the highest longitudinal optical frequency. Such an edge is associated with a reflectivity minimum and a higher frequency band connoting strong electron-phonon interactions, carrier phonon assisted hopping, and polaron formation. Optical conductivity fits with current polaron models provide grounds toward a microscopic understanding of transport properties in these as-prepared granular films.     

Current voltage analysis and band diagram of Ti/TiO2 nanotubes Schottky junction

We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni²⁺ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films.     

Electronic transport mechanisms in tetraphenyleprophyrin thin films

Thermally-evaporated thin films of tetraphenylporphyrin, TPP, with thickness range from (175 to 735) nm had been prepared. Annealing temperatures ranging from (273–473) K do not influence the amorphous structure of these films. The influence of environmental conditions: film thickness, temperature and frequency on the electrical properties of TPP thin films had been reported. It was found that dc conductivity increases with increasing temperature and film thickness. The extrinsic conduction mechanism is operating in temperature range of (293–380) K with activation energy of 0.13 eV. The intrinsic one is in temperatures >380 K via phonon assisted hopping of small polaron with activation energy of 0.855 eV. The ac electrical conductivity and dielectric relaxation in the temperature range (293–473) K and in frequency range (0.1–100) kHz had been also studied. It had been shown that theoretical curves generated from correlated barrier hopping (CBH) model gives the best fitting with experimental results. Analysis of these results proved that conduction occurs at low temperatures (300–370) K by phonon assisted hopping between localized states and it is performed by single polaron hopping process at higher temperatures. The temperature and frequency dependence of both the real and imaginary parts of dielectric constant had been reported.     

Polar dependent in-plane electric transport of epitaxial ZnO thin films on SrTiO(3) substrates

Polar (001) and nonpolar (110) ZnO epitaxial thin films were grown on SrTiO(3) substrates by the pulsed laser deposition method and the in-plane electric transport was investigated. Both films display semiconducting behavior. The polar thin films have linear I-V relations with mobility increasing almost linearly with temperature. In contrast, for nonpolar ZnO thin films, the I-V curves are symmetric and nonlinear with room temperature resistivity 30 times larger than that of polar thin films. We conclude that in nonpolar ZnO thin films the bound polarization charge induced barrier limits the carrier transport. Instead, for polar thin films, the polar effect on the in-plane transport is negligible, and the charged dislocation scattering is dominant. Our observations suggest the polar effect should be considered in the design of ZnO related devices.     

Effect of Al doping on structural,optical and electrical properties of SnO2 thin films synthesized by pulsed laser deposition

Aluminium-doped (Al = 0–5?wt.%) SnO₂ thin films with low-electrical resistivity and high optical transparency have been successfully synthesized by pulsed laser deposition technique at 500 °C. Structural, optical and electrical properties of the as-deposited and post-annealed thin films were investigated. X-ray diffraction patterns suggest that the films transform from crystalline to amorphous state with increasing aluminium content. The root mean square (R_q) surface roughness parameter, determined by atomic force microscopy decreases upon annealing of the as-deposited film. While resistivity of the film is the lowest (9.49 × 10^?4 Ω-cm) at a critical doping level of 1?wt.% Al, optical transparency is the highest (nearly 90%) in the as-deposited condition. Temperature dependence of the electrical resistivity suggests that the Mott’s variable range hopping process is the dominant carrier transport mechanism in the lower temperature range (40–135 K) for all the films whereas, thermally activated band conduction mechanism seems to account for conduction in the higher temperature region (200–300 K).     

BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文)

我们利用激光分子束外延设备(L MBE)在MgO上外延生长了一系列BaNbxTi1-xO3(0 相似文献   

Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films

In the present work, lanthanum nickel oxide (LNO) thin films were prepared by the sol-gel method. Microstructures of the films were tailored by changing sol concentration so as to investigate the effect of grain boundary on the transport properties of electrons in the polycrystalline LNO films. Based on the temperature dependence of the resistivity and the magnetic field dependence of the magnetoresistance (MR) at various temperatures, the factors that dominate the transport behavior in the polycrystalline LNO films were explored in terms of weak localization and strong localization. The results show that the grain boundary has a significant influence on the transport behavior of the electrons in LNO films at a low-temperature region, which can be captured by a variable-range hopping (VRH) model. The increase of metal–insulator (M–I) transition temperature is ascribed to Anderson localization in grain boundary. At a high-temperature region, electron–electron scattering and electron–phonon scattering predominates in the films. In this case, the existence of more grain boundary shows a minor effect on the transport behavior of the electrons but elevates the residual resistivity of the films.     

Magnetic, electronic, dielectric and optical properties of Pr(Ca:Sr)MnO 3

The charge-ordered perovskite Pr_0.65Ca_0.28Sr_0.07MnO₃ was investigated by means of magnetic susceptibility, specific heat, dielectric and optical spectroscopy and electron-spin resonance techniques. Under moderate magnetic fields, the charge order melts yielding colossal magnetoresistance effects with changes of the resistivity over eleven orders of magnitude. The optical conductivity is studied from audio frequencies far into the visible spectral regime. Below the phonon modes hopping conductivity is detected. Beyond the phonon modes the optical conductivity is explained by polaronic excitations out of a bound state. ESR techniques yield detailed informations on the (H,T ) phase diagram and reveal a broadening of the linewidth which can be modeled in terms of activated polaron hopping. Received 9 August 2000     

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr,Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

Ferroelectric Pb(Zr, Ti)O₃ thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with P_r=15μC/cm², E_c= 50kV/cm, high resistivity and high dielectric constant.     

掺杂锰氧化物和极化子行为

掺杂锰氧化物属于强关联材料,实验上明确显示出强电-声子耦合对于材料性质(如输运性质和铁磁性质)的影响.极化子是对氧化物材料中载流子行为的近似描述.顺磁状态的掺杂锰氧化物样品电阻率随温度变化关系可以用极化子理论进行很好的描述,并且数据分析还提供了与材料性质有关的微观参数.利用文章作者提出的跃迁极化子交换相互作用与材料铁磁有序温度TC联系的关系式,对掺杂锰氧化物样品磁场下的测量结果进行了数据拟合.非常好的拟合结果说明,跃迁极化子决定交换耦合及铁磁有序的物理图像和数据拟合中使用的近似是合理的.在数据拟合基础上对掺杂锰氧化物和巨磁电阻(CMR)效应的物理图像进行了讨论.     

Voltage-induced metal-insulator transition in polythiophene field-effect transistors

We have extensively studied the carrier transport in regio-regular polythiophene field-effect transistors (FETs) from room temperature to 4.2 K. At low temperatures, Zabrodskii plots (dlnsigma/dlnT) demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition at a carrier density of 5x10(12) cm-2. The carrier transport in the insulating regime is well described by phonon assisted hopping in a disordered Fermi glass with Coulomb interaction between the hopping charge carrier and the opposite charge left behind, as described by Efros and Shklovskii.     

Small polaron hopping conduction mechanism in Ni-doped LaFeO3

The electrical transport properties of LaFe_{1? x} Ni _x O₃ (0.1 ≤ x ≤ 0.6) bulk samples were investigated over a wide temperature range, i.e. 9–300 K. Powder x-ray diffraction patterns at room temperature showed that all samples were formed in a single phase. However, a structural transformation was observed from orthorhombic (Pnma) to rhombohedral crystal symmetry at x > 0.5 in Ni-doped samples, which is supported by the electrical transport analysis. Temperature-dependent resistivity data were fitted using Mott's variable-range hopping model for a limited range of temperatures to calculate the hopping distance and the density of states at Fermi level. It was found that all parameters vary systematically with an increase in Ni concentration. Moreover, the resistivity data were also fitted using the small polaron hopping (SPH) model. The non-adiabatic SPH conduction mechanism is followed up to 50% Ni concentration, whereas an adiabatic hopping conduction mechanism is active above it. Such a change in the conduction mechanism is accompanied by subtle electronically induced structural changes involving Fe³⁺–O–Fe³⁺ and Fe³⁺–O–Ni³⁺ bond angles and bond lengths. Thus, we suggest that the transport properties can be explained according to the additional delocalization of charge carriers induced by Ni doping.     

Scaling of anomalous hall resistivity in Nd2(Mo(1-x)Nb(x))2O7 with spin chirality

We have investigated scaling of anomalous Hall resistivity with longitudinal resistivity (rho(xx)) in pyrochlore type Nd2(Mo(1-x)Nb(x))2O7 with spin chirality. Scattering rate of the conduction electron on the Mo sublattice can be varied with x from band transport to polaron hopping, while keeping the two-in-two-out structure of the Nd moments intact. The anomalous part of the Hall resistivity arising from the Mo spin chirality (rho(H)(chi)) shows a clear scaling behavior with rho(xx) (rho(H)(chi) proportional to rho(xx)0.39), in accord with a recent theoretical result based on the Berry phase mechanism in the hopping conduction regime.     

Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.     

Metal-to-insulator crossover in the low-temperature normal state of Bi(2)Sr(2-x)La(x)CuO(6+delta)

We measure the normal-state in-plane resistivity of Bi(2)Sr(2-x)La(x)CuO(6+delta) single crystals at low temperatures by suppressing superconductivity with 60 T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic to an insulating behavior in the low-temperature normal state. This crossover is estimated to occur near 1/8 doping, well inside the underdoped regime, and not at optimum doping as reported for other cuprates. The insulating regime is marked by a logarithmic temperature dependence of the resistivity over two decades of temperature, suggesting that a peculiar charge localization is common to the cuprates.     

Cation defects and conductivity in transparent oxides

High quality doped zinc oxide and mixed transition metal spinel oxide films have been deposited by means of sputter deposition from metal and metal oxide targets, and by spin casting from aqueous or alcoholic precursor solutions. Deposition conditions and post-deposition processing are found to alter cation oxidation states and their distributions in both oxide materials resulting in marked changes to both optical transmission and electrical response. For ZnO, partial reduction of the neat or doped material by hydrogen treatment of the heated film or by electrochemical processing renders the oxide n-type conducting. Continued reduction was found to diminish conductivity. In contrast, oxidation of the infrared transparent p-type spinel conductors typified by NiCo₂O₄ was found to increase conductivity. The disparate behavior of these two materials is caused, in part, by the sign of the charge carrier and by the existence of two different charge transport mechanisms that are identified as free carrier conduction and polaron hopping. While much work has been reported concerning structure/property relationships in the free carrier conducting oxides, there is a significantly smaller body of information on transparent polaron conductors. In this paper, we identify key parameters that promote conductivity in mixed metal spinel oxides and compare their behavior with that of the free carrier TCO’s. PACS 61.72.C.; 71.38.-k; 81.15.-z; 77.84.Bw; 73.61.-r