硅(001)图形衬底上锗硅纳米线的定位生长

纳米线的定位生长是实现纳米线量子器件寻址和集成的前提.结合自上而下的纳米加工和自下而上的自组装技术,通过分子束外延生长方法,在具有周期性凹槽结构的硅(001)图形衬底上首先低温生长硅锗薄膜然后升温退火,实现了有序锗硅纳米线在凹槽中的定位生长,锗硅纳米线的表面晶面为(105)晶面.详细研究了退火温度、硅锗的比例及图形周期对纳米线形成与否,以及纳米线尺寸的影响.     

Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate

Monolayer MnTe₂ stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe₂ bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe₂. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe₂ on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn⁴⁺ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe₂ compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe₂ monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe₂ film provides a new platform to investigate the 2D magnetism.     

湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响

利用射频等离子体辅助分子束外延法,在刻有周期性孔点阵结构的Si衬底上生长了ZnO二维周期结构薄膜,系统研究了湿法化学刻蚀对孔形点阵Si(100),Si(111)基片表面形貌的影响,以及两种初底上ZnO外延薄膜的结晶质量与周期形貌的差异.X射线衍射及扫描电子显微测试结果表明：Si (111)衬底上生长出的ZnO二维周期结构薄膜具有较好的结晶质量与较好的周期性表面形貌.该研究结果为二维周期结构的制备提供了一种新颖的方法. 关键词： ZnO 分子束外延 Si 湿法刻蚀     

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates.     

等离子辅助分子束外延技术研究生长在Si(111)衬底的氮化镓pn结

利用等离子辅助分子束外延系统研究了生长在硅(111)衬底的氮化镓pn结,并将其应用于光学器件．硅和镁分别用做n和p掺杂,反射高能电子衍射图像显示氮化镓pn结层具有良好的表面形貌,结层厚度约为0.705 nm,且为六方结构．室温下X射线衍射对称摇摆曲线中(0002)面的ω/2θ显示,半峰宽为0.340,说明氮化镓pn结质量高．另外,在硅和镁掺杂样品中没有A1峰淬灭．光致发光光谱表明pn结样品具有良好的光学性能．镍和铝作为分别作为正面和背面的电极接触应用于光学器件,该器件的电流电压特性显示了典型的异质结整流特性．正向接触镍经过氮气中退火处理10 min,结果表明,600 oC处理的样品比400 oC处理和未经处理的样品具有更高的增益．     

Two crucial factors influencing quality of GaAs on Ge substrate

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.     

Relation between interdiffusion and polarity for MBE growth of GaN epilayers on ZnO substrates

We report on GaN growth on Zn-polar ZnO substrates using plasma-assisted molecular-beam epitaxy (P-MBE). Before GaN growth, ZnO substrate annealing conditions were optimized. Reflection high-energy electron diffraction (RHEED) patterns after low-temperature GaN buffer layer annealing changed from streaky to spotty, suggesting that zinc and oxygen atoms interdiffuse from the ZnO substrate into the GaN epilayer. This interdiffusion results in a mix-polar GaN epilayer.     

Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×10¹⁹ to 1.66×10¹⁸ cm⁻³ and Hall mobility increased from 226 to 946 cm² V⁻¹ s⁻¹ as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.     

Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜

使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si(001)衬底上采用分子束外延法生长出Ge_0.975Sn_0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge_0.975Sn_0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge_0.975Sn_0.025合金薄膜在500 ℃下具有很好的热稳定性,有望在Si基光电器件中得到应用. 关键词： GeSn Ge 分子束外延 外延生长     

Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux

The microstructural properties of a GaN thin film grown on a Si(110) substrate under various ammonia (NH₃)-flux conditions were observed to study growth mode and defect evolution. The surface flatness of GaN thin films was improved with the increase of the NH₃ flux while the thickness was decreased by increasing the NH₃ flux. In addition, the crystalline quality of the GaN film grown under the lower NH₃ flux (100 sccm) was better than that of the film under the higher NH₃ flux (400 sccm). The different dislocation behaviors depending on NH₃ fluxes were observed; the low density of dislocations was measured and most of dislocations penetrating the thin film was mixed- and edge-type dislocations when GaN was grown under the low NH₃ flux condition while the high density of dislocation and many mixed- and screw-type dislocations penetrating the film were observed in the GaN film grown under the high NH₃ flux. These phenomena are demonstrated by using a kinetic model related to the role of NH₃.     

MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 × 1 surfaces with low (<1°) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 × 7 vicinal substrates misoriented 4° toward the direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.     

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga₂O₃ is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga₂O₃ and the main epitaxial relationship should be and .      

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

The use of a nitrogen electron cyclotron resonance (ECR) plasma source has allowed the growth of GaAsN at GaAs substrate temperatures as high as 600 °C, unlike the case for growth using radio frequency (RF) plasma sources, for which there is significant loss of nitrogen at substrate temperatures as low as 480-520 °C. Photoluminescence (PL) intensities are significantly improved at a substrate temperature of 600 °C and are further improved slightly by using an ion trap to extract charged species from the beam. As the trap voltage is increased there is a reduction in the total nitrogen concentration, as measured by secondary ion mass spectrometry (SIMS), and a slight increase in the active nitrogen concentration, as measured by PL. These observations are consistent, for example, with charged and active nitrogen species together being involved in the formation of point defects, however more work is needed to clarify what may well prove to be a complex situation.     

STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

Effect of lower growth temperature on C incorporation in GeC epilayers on Si(0 0 1) grown by MBE

Effect of lower growth temperature T_s on C incorporation to substitutional sites in Ge_1−xC_x/Si(0 0 1) grown by molecular beam epitaxy was investigated. To enhance the non-equilibrium growth condition, the temperature T_s was lowered from 600°C down to 300°C. The C incorporation into substitutional sites of GeC epilayers was very sensitive to T_s. X-ray diffraction (XRD) measurement indicated that the substitutional C composition x increased with decrease in T_s from 600°C to 400°C. At T_s350°C, the estimation of x by the XRD analysis was impossible because of polycrystallization. The Raman shift measurement enables to estimate x for T_s350°C, as consequently larger x than that grown at T_s=400°C was verified. The enhancement of non-equilibrium growth condition by decreasing T_s was important to increase x.     

关于RHEED振荡技术优化GaAs(110)量子阱生长的研究

在GaAs(110)衬底上生长的半导体材料有诸多优良性能，使得在非极性GaAs(110)衬底上获得高质量各类异质结材料，成为近年来分子束外延生长关注的课题.考虑GaAs(110)表面是Ga和As共面，最佳生长温度窗口很小；反射式高能电子衍射的(1×1)再构图案对生长温度和V/Ⅲ束流比不敏感，难于通过观察再构图案的变化，准确地找到最佳生长条件.作者在制备GaAs(110)量子阱过程中，观察到反射式高能电子衍射强度振荡呈现出的单双周期变化.这意味着不同工艺条件下，在 GaAs(110)衬底上量子阱有单层和双层两种生长模式.透射电子显微镜和室温光致荧光光谱测量结果表明：在双层生长模式下量子阱样品光学性能较差，而在单层生长模式下量子阱光学性能较好，但是界面会变粗糙.利用这一特点，我们采用反射式高能电子衍射强度振荡技术，找到了一种在GaAs(110)衬底上生长高质量量子阱的可行方法. 关键词： 反射高能电子衍射 量子阱 分子束外延     

Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.     

Quantum dots-templated growth of strain-relaxed GaN on a c-plane sapphire by radio-frequency molecular beam epitaxy

We investigated the quantum dots-templated growth of a(0001) GaN film on a c-plane sapphire substrate.The growth was carried out in a radio-frequency molecular beam epitaxy system.The enlargement and coalescence of grains on the GaN quantum dots template was observed in the atom force microscopy images,as well as the more ideal surface morphology of the GaN epitaxial film on the quantum dots template compared with the one on the AlN buffer.The Ga polarity was confirmed by the reflected high energy electron diffraction patterns and the Raman spectra.The significant strain relaxation in the quantum dots-templated GaN film was calculated based on the Raman spectra and the X-ray rocking curves.Meanwhile,the threading dislocation density in the quantum dots-templated film was estimated to be 7.1×107cm-2,which was significantly suppressed compared with that of the AlN-buffered GaN film.The roomtemperature Hall measurement showed an electron mobility of up to 1860cm2 /V·s in the two-dimensional electron gas at the interface of the Al 0.25Ga0.75 N/GaN heterojunction.     

Magnetization reversal of ultrathin Fe film grown on Si（111） using iron silicide template

Ultrathin Fe films were epitaxially grown on Si（lll） by using an ultrathin iron silicide film with p（2 × 2） surface reconstruction as a template. The surface structure and magnetic properties were investigated in situ by low energy electron diffraction （LEED）, scanning tunnelling microscopy （STM）, and surface magneto-optical effect （SMOKE）. Polar SMOKE hysteresis loops demonstrate that the Fe ultrathin films with thickness t 〈 6 ML （monolayers） exhibit perpen-dicular magnetic anisotropy. The characters of M-H loops with the external magnetic field at difference angles and the angular dependence of coercivity suggest that the domain-wall pinning plays a dominant role in the magnetization reversal process.[第一段]