相位角对容性耦合电非对称放电特性的影响

电非对称效应作为一种新兴技术,被广泛用于对离子能量和离子通量的独立调控.此外,在改善等离子体的径向均匀性方面,电非对称效应也发挥了重要作用.本文采用二维流体力学模型,并耦合麦克斯韦方程组,系统地研究了容性耦合氢等离子体中当放电由多谐波叠加驱动时,不同谐波阶数k下的电非对称效应,重点观察了相位角θ_n对自偏压以及等离子体径向均匀性的影响.模拟结果表明：在同一谐波阶数下,自偏压随相位角θ_n的变化趋势不尽相同,且当k增大（k>3）时,自偏压随最高频相位角θ_k的变化范围逐渐减小.此外,通过调节相位角θ_n,可以改变轴向功率密度和径向功率密度的相对关系,进而实现对等离子体径向均匀性的调节.研究结果对于利用电非对称效应优化等离子体工艺过程具有一定的指导意义.     

Ge-Sb-Se硫系玻璃的折射率和热光系数

Ge-Sb-Se硫系玻璃被认为是极佳的红外传输材料和有潜力的非线性光学材料.在光学设计中,玻璃的线性折射率(n)及其热光系数(ζ)是关键技术参数.以预测和调控Ge-Sb-Se玻璃的n和ζ为目的,考察了玻璃的n,ζ,密度(d)和体积膨胀系数(β)与化学参数dSe和拓扑网络结构参数r的内在联系.研究发现,玻璃的n随d的增加而增大;ζ随β的增大而近似线性减小;β随dSe的减小或r的增大而减小;当Ge含量固定时, d随dSe的减小或r的增大而增大,当Sb含量固定时, d在dSe=0时具有最小值.基于实测d和n,拟合获得了Ge, Sb和Se元素在2—12μm波段的摩尔折射度(R_i),分别为R_(Ge)=10.16—10.50 cm~3/mol,RSb=16.71—17.08 cm~3/mol和RSe=11.15—11.21 cm~3/mol,根据d和R_i计算得到的n与实测值的偏差小于1%.基于实测ζ和β,拟合得到了Ge, Sb和Se元素在2—12μm波段的摩尔折射度温度系数(φ_i),分别为φ_(Ge)=21.1—22.6 ppm/K,φ_(Sb)=7.2—8.4 ppm/K和φ_(Se)=90.2—94.2 ppm/K,根据β和φ_i计算得到的ζ与实测值的偏差小于6 ppm/K.     

Study on divertor plasma behavior through sweeping strike point in new lower divertor on EAST

A series of L-mode discharges have been conducted in the new ‘corner slot’ divertor on the Experimental Advanced Superconducting Tokamak (EAST) to study the divertor plasma behavior through sweeping strike point. The plasma control system controls the strike point sweeping from the horizontal target to the vertical target through poloidal field coils, with keeping the main plasma stability. The surface temperature of the divertor target cools down as the strike point moves away, indicating that sweeping strike point mitigates the heat load. To avoid the negative effect of probe tip damage, a method based on sweeping strike point is used to get the normalized profile and study the decay length of particle and heat flux on the divertor target λ_js, λ_q. In the discharges with high radio-frequency (RF) heating power, electron temperature T_e is lower and λ_js is larger when the strike point locates on the horizontal target compared to the vertical target, probably due to the corner effect. In the Ohmic discharges, λ_js, λ_q are much larger compared to the discharges with high RF heating power, which may be attributed to lower edge T_e.     

AlC分子 X4∑-和B4∑-电子态的光谱性质

采用Davidson修正的内收缩多参考组态相互作用方法(MRCI+Q) 结合Dunning等的相关一致基aug-cc-pVnZ (n=D,T,Q,5,6) 计算了AlC分子X⁴∑^-和B⁴∑^-态的势能曲线, 并利用总能量外推公式将这两个态的总能量分别外推至完全基组极限. 对势能曲线进行核价相关修正及相对论修正, 并详细讨论了基组、核价相关和相对论修正 等对X⁴∑^-和B⁴∑^-电子态的能量和光谱常数的影响. 拟合核价相关及相对论效应修正的外推势能曲线, 得到了AlC分子X⁴∑^- 和B⁴∑^-电子态的主要光谱常数T_e, R_e, ω_e, ω_ex_e, ω_ey_e, B_e和α_e. 它们与实验结果符合较好. 求解双原子分子核运动的径向Schrödinger方程, 找到了无转动的AlC分子两个电子态的全部振动态. 针对每一振动态, 还分别计算了其相应的振动能级和惯性转动常数等分子常数. 它们与已有的实验结果一致. 关键词： 光谱常数 分子常数 核价相关修正 相对论修正     

SnO分子的X~1∑~+,a~3Π和A~1Π态的势能曲线与光谱性质

对O原子以aug-cc-pvTZ为基组,Sn原子以aug-cc-pvTZ-PP为基组,分别采用多参考组态相互作用方法(MRCI)及运用Davidson修正的多参考组态相互作用方法对SnO分子基态X~1Σ~+及两个激发态a~3Π和A~1Π态的势能曲线进行计算,进而得到了各态的平衡键长R_e,谐振频率w_2,非谐振常数ω_ex_e,转动常数B_r,垂直跃迁能T_e以及离解能D_e,通过群论原理确定了各电子状态和离解通道,计算结果表明:3个电子态有共同的离解通道,即Sn(~3p)+O(~3p);利用Level程序对势能曲线进行拟合得到的光谱数据表明,MRCI方法的计算结果与实验值符合更好;通过求解核运动的Schrodinger方程得到了J=0时这三个电子态的前30个振动态的B_v和D_v等分子常数和振动能级E。     

短垂直阵“简正波分解矩阵”特征值的近似解析表达式

在海面和海底反射系数均为-1的理想波导条件下,讨论短垂直阵“简正波分解矩阵”的特性,给出矩阵特征值λ_n与阵长参数D/H(D为阵长,H为海深)和n之间的近似解析表达式。海面矩阵的λn正比于参数α(即πD/H)的(4n-1)次方,而海中短阵λn正比于α^2n-1.理论推导不仅解释了短垂直阵分解声场简正波或匹配场处理效果差的原因,同时指出合理选择短阵深度,将有效提高商正波分解能力和声源定位精度。     

LiAl分子基态、激发态势能曲线和振动能级

利用单双激发多参考组态相互作用方法获得了LiAl分子基态X¹∑⁺及七个激发态a³∏, A¹∏, b³∑⁺, c³∑⁺, B¹∏, C¹∑⁺, d³∏的势能曲线, 通过势能曲线得到各态的平衡核间距R_e, 进而求得绝热激发能和垂直激发能.计算结果表明:c³∑⁺ 电子态是一个不稳定的排斥态, A¹∏态是一个较弱的束缚态, 其余6个电子态均为束缚态; b³∑⁺与 c³∑⁺态之间存在预解离现象; 8个电子态分别解离到两个通道, 即Li(²S)+Al(²P⁰)与Li(²P⁰)+Al(²P⁰). 接着将势能曲线拟合到Murrel-Sorbie解析势能函数形式, 据此获得各态的光谱数据:基态X¹∑⁺的平衡键长为0.2863 nm, 谐振频率为316 cm^-1, 解离能D_e为1.03 eV, 激发态a³∏, A¹∏, b³∑⁺, c³∑⁺, B¹∏, C¹∑⁺, d³∏的垂直激发能依次为0.27, 0.83, 1.18, 1.14, 1.62, 1.81, 2.00 eV; 解离能依次为1.03, 0.82, 0.26, 排斥态, 1.54, 1.10, 0.93 eV, 相应谐振频率 ω_e为339, 237, 394, 排斥态, 429, 192, 178 cm^-1. 通过求解核运动的薛定谔方程找到了J=0时 LiAl分子7个束缚电子态的振动能级和转动惯量. 关键词： LiAl 光谱常数 势能曲线 振动能级     

Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

Au/Bi₄Ti₃O₁₂/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (Φ_B0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Φ_B0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of Φ_B0 and linearity in Φ_B0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.     

Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field

Based on the variational method of Pekar type, we study the energies and the wave-functions of the ground and the first-excited states of magneto-bipolaron, which is strongly coupled to the LO phonon in a parabolic potential quantum dot under an applied magnetic field, thus built up a quantum dot magneto-bipolaron qubit. The results show that the oscillation period of the probability density of the two electrons in the qubit decreases with increasing electron–phonon coupling strength α, resonant frequency of the magnetic field ω_c, confinement strength of the quantum dot ω_0, and dielectric constant ratio of the medium η; the probability density of the two electrons in the qubit oscillates periodically with increasing time t, angular coordinate φ_2, and dielectric constant ratio of the medium η; the probability of electron appearing near the center of the quantum dot is larger, and the probability of electron appearing away from the center of the quantum dot is much smaller.     

甚高频激发容性耦合氩等离子体的电子能量分布函数的演变

甚高频激发的容性耦合等离子体由于离子通量和能量的相对独立可控而受到人们的关注. 本文采用朗缪尔探针诊断技术测量了40.68 MHz激发的容性耦合Ar等离子体的特性(如电子能量概率分布、电子温度和密度等)随宏观参量的演变情况. 实验结果表明, 电子能量概率分布随着气压的增加从双麦克斯韦分布逐步转变为单麦克斯韦分布并最终演变为Druyvesteyn分布, 而射频激发功率的增加促进了低能电子布居数的增强; 在从等离子体放电中心移向边界的过程中, 低能电子的布居数显著下降, 而高能电子的布居则有所上升; 放电极板间距的变化直接导致了等离子体中电子加热模式的转变. 另外, 我们也对等离子体中的高低能电子密度和温度的分配情况进行了讨论.     

Na_2~+离子较低电子态势能曲线和光谱常数的理论研究

通过多组态相互作用方法,结合原子有效芯势与极化势,利用非收缩的高斯基函数,计算了Na_2~+分子对应最低9个解离限的36个电子态的势能曲线.基于计算获得的束缚态势能曲线,拟合给出了相应的光谱常数,并与已有的实验和理论结果进行了比较.同时,给出了部分电子态的振动-转动能级和一些同类态避免交叉点的信息.计算获得的光谱信息对冷原子分子光谱与动力学的研究具有参考价值.     

PS自由基X2Π态的势能曲线和光谱性质

采用Davidson修正的内收缩多参考组态相互作用方法(icMRCI+Q) 结合Dunning等的相关一致基计算了PS自由基X²Π 态势能曲线. 利用三阶Douglas-Kroll Hamilton近似结合cc-pV5Z相对论收缩基进行了相对论修正计算. 利用aug-cc-pCV5Z基组对势能曲线进行了核价相关修正计算, 并将总能量外推至完全基组极限. 拟合得到了X²Π态的主要光谱常数R_e, ω_e, ω_ex_e, ω_ey_e, B_e, α_e 和D_e, 与实验结果符合较好. 利用Breit-Pauli算符, 研究了旋轨耦合效应对势能曲线的影响, 得到了两条Ω 态的势能曲线. 详细分析了在旋轨耦合计算中, 核电子相关与冻结核近似对电子结构和光谱性质的影响. 在icMRCI+Q/56+DK+CV+SO理论水平上得到了两个Ω 态的主要光谱常数T_e, R_e, ω_e, ω_ex_e, ω_ey_e, B_e 和α_e, 结果与实验结果一致. 在平衡位置处, 本文的X²Π态旋轨耦合能量分裂值为 323.73 cm^-1, 与实验结果321.93 cm^-1较为一致. 通过求解双原子分子核运动的径向Schrödinger方程, 找到了无转动PS自由基X²Π态及其两个Ω 态的全部振动态, 还分别计算了它们相应的振动能级和惯性转动常数等分子常数, 这些结果与已有的实验值一致. 关键词： 势能曲线 光谱常数 分子常数 旋轨耦合     

层状介质中的声波场及面波研究

本文在前人基础上,采用B、P、C坐标系研究了层状介质中的声波场及面波特性,理论上发现了一个重要结论及一些新的性质,并数值分析了Rayleigh和Love面波的频散特性。定义了关于Rnyleigh面波的两个物理量β₁(位移的B,P分量比)和β₂(应力的B,P分量比),经理论及数值分析发现:β₁和β₂与介质的层状结构密切相关,是对层状介质进行分析和判断的两个重要物理量。     

二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

1/f-type fluctuation of electron transmission in one-dimensional disordered systems

A universal feature of 1/f-type fluctuation is numerically observed in the system-size n dependence of the transmission amplitude t_n in various one-dimensional disordered systems. The power spectrum P(f) of the transmission coefficient T(n)=|t_n|² exhibits the power law of 1/f², irrespective to the type of disorder of the system whether it is of short-range or of long-range correlation. That of the phase θ_t(n) of t_n also does the universal power law of 1/f^1.4.     

径向积分的解析计算

本文阐明的方法能方便地求出径向积分ⁿ₁^l₁F_Lⁿ₂^l₂(q)≡∫₀^∞> (R_n1^l₁(αr)jL(Kr)R_n2^l₂(αr)r²dr(q≡(K)/(α))的解析表达式。文中给出了L=0,1,2情况下各个径向积分的解析式,同时还以多重求和的形式络出了对各种量子数L,n₁,l₁,n₂,l₂适用的径向积分表达式。     

Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

定量核磁共振氢谱测定新药替格瑞洛

本文建立了基于核磁共振氢谱（¹H NMR）测定新药替格瑞洛绝对含量的方法.采用Bruker Avance 300型NMR谱仪,以磺胺多辛为内标;以替格瑞洛中质子信号δ_H 7.14（2H,m）和δ_H 7.04（1H,s）,磺胺多辛质子信号δ_H 8.04（1H,s）、δ_H 7.73（2H,d）和δ_H 6.54（2H,d）作为定量峰;以氘代甲醇（CD₃OD）为溶剂进行测定.测定条件为：探头温度为308 K,谱宽为3 511.5 Hz,中心频率为1 470.6 Hz,脉冲翻转角为θ=30°,延迟时间为10 s,采样次数为16,线宽因子为0.3 Hz.在此实验条件下,替格瑞洛样品与内标磺胺多辛的定量峰分离良好,实验结果精密度较高、重复性较好、线性范围较宽,其线性拟合方程为：Y=1.053X-0.081（r=0.996,n=5）.最终测得样品中替格瑞洛含量为99.4%,相对标准偏差（RSD）为0.20%.该方法简便、准确、快速,适用于替格瑞洛样品的绝对含量测定.     

Device topological thermal management of β-Ga_2O_3 Schottky barrier diodes

The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_2 O_3) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_2 O_3, their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_2 O_3 Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_2 O_3, work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_2 O_3 plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_2 O_3 SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_2 O_3 diode.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.