Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

Controlling the anomalous Hall effect(AHE)inspires potential applications of quantum materials in the next generation of electronics.The recently discovered quasi-2D kagome superconductor CsV₃Sb₅ exhibits large AHE accompanying with the charge-density-wave(CDW)order which provides us an ideal platform to study the interplay among nontrivial band topology,CDW,and unconventional superconductivity.Here,we systematically investigated the pressure effect of the AHE in CsV₃Sb₅.Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV₃Sb₅.Remarkably,distinct from the negative AHE at ambient pressure,a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa,which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure.Our work indicates that the anomalous Hall effect in CsV₃Sb₅ is tunable and highly related to the band structure.     

Tri-hexagonal charge order in kagome metal CsV3Sb5 revealed by 121Sb nuclear quadrupole resonance

We report ¹²¹Sb nuclear quadrupole resonance(NQR)measurements on kagome superconductor CsV₃Sb₅ with Tc=2.5 K.¹²¹Sb NQR spectra split after a charge density wave(CDW)transition at 94 K,which demonstrates a commensurate CDW state.The coexistence of the high temperature phase and the CDW phase between 91 K and 94 K manifests that it is a first order phase transition.The CDW order exhibits tri-hexagonal deformation with a lateral shift between the adjacent kagome layers,which is consistent with 2×2×2 superlattice modulation.The superconducting state coexists with CDW order and shows a conventional s-wave behavior in the bulk state.     

Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film

As a special order of electronic correlation induced by spatial modulation, the charge density wave (CDW) phenomena in condensed matters attract enormous research interests. Here, using scanning—tunneling microscopy in various temperatures, we discover a hidden incommensurate stripe-like CDW order besides the ($sqrt{7}$ × $sqrt{3}$) CDW phase at low-temperature of 4 K in the epitaxial monolayer 1T-VSe₂} film. Combining the variable-temperature angle-resolved photoemission spectroscopic (ARPES) measurements, we discover a two-step transition of an anisotropic CDW gap structure that consists of two parts Δ₁ and Δ₂. The gap part Δ₁ that closes around ～ 150 K is accompanied with the vanish of the ($sqrt{7}$ × $sqrt{3}$) CDW phase. While another momentum-dependent gap part Δ₂ can survive up to ～ 340 K, and is suggested to the result of the incommensurate CDW phase. This two-step transition with anisotropic gap opening and the resulted evolution in ARPES spectra are corroborated by our theoretical calculation based on a phenomenological form for the self-energy containing a two-gap structure Δ₁ + Δ₂, which suggests different forming mechanisms between the ($sqrt{7}$ × $sqrt{3}$) and the incommensurate CDW phases. Our findings provide significant information and deep understandings on the CDW phases in monolayer 1T-VSe₂} film as a two-dimensional (2D) material.     

Multiband nodeless superconductivity near the charge-density-wave quantum critical point in ZrTe_(3-x)Se_x

It was found that selenium doping can suppress the charge-density-wave(CDW) order and induce bulk superconductivity in ZrTe_3. The observed superconducting dome suggests the existence of a CDW quantum critical point(QCP) in ZrTe_3-xSex near x ≈ 0.04. To elucidate the superconducting state near the CDW QCP, we measure the thermal conductivity of two ZrTe_(3-x)Se_x single crystals(x = 0.044 and 0.051) down to 80 m K. For both samples, the residual linear term κ_0/T at zero field is negligible, which is a clear evidence for nodeless superconducting gap. Furthermore, the field dependence of κ_0/T manifests a multigap behavior. These results demonstrate multiple nodeless superconducting gaps in ZrTe_(3-x)Se_x,which indicates conventional superconductivity despite of the existence of a CDW QCP.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.     

Structural evolution and bandgap modulation of layered β-GeSe2 single crystal under high pressure

Germanium diselenide (GeSe₂) is a promising candidate for electronic devices because of its unique crystal structure and optoelectronic properties. However, the evolution of lattice and electronic structure of $β$-GeSe₂ at high pressure is still uncertain. Here we prepared high-quality $β$-GeSe₂ single crystals by chemical vapor transfer (CVT) technique and performed systematic experimental studies on the evolution of lattice structure and bandgap of $β$-GeSe₂ under pressure. High-precision high-pressure ultra low frequency (ULF) Raman scattering and synchrotron angle-dispersive x-ray diffraction (ADXRD) measurements support that no structural phase transition exists under high pressure up to 13.80 GPa, but the structure of $β$-GeSe₂ turns into a disordered state near 6.91 GPa and gradually becomes amorphous forming an irreversibly amorphous crystal at 13.80 GPa. Two Raman modes keep softening abnormally upon pressure. The bandgap of $β$-GeSe₂ reduced linearly from 2.59 eV to 1.65 eV under pressure with a detectable narrowing of 36.5%, and the sample under pressure performs the piezochromism phenomenon. The bandgap after decompression is smaller than that in the atmospheric pressure environment, which is caused by incomplete recrystallization. These results enrich the insight into the structural and optical properties of $β$-GeSe₂ and demonstrate the potential of pressure in modulating the material properties of two-dimensional (2D) Ge-based binary material.     

高压下L-丝氨酸的拉曼光谱研究

压力可以引起蛋白折叠与变性。作为蛋白质的基本构成单位,氨基酸在高压下的变化近来年备受关注。在常见的20种氨基酸中,学者们利用高压拉曼技术已研究了多种氨基酸在高压下的变化,研究的最高压力达到30 GPa。为了探究L-丝氨酸(C₃H₇NO₃)在极高压力下的结构变化情况,采用原位高压拉曼技术在常温下对L-丝氨酸晶体进行研究,最高压力达到22.6 GPa。研究发现,当压力达到2.7 GPa时,在102 cm-1处出现新峰,在1 123 cm-1(NH₃反对称摇摆振动)处的特征峰出现劈裂;当压力达到5.4 GPa时,L-丝氨酸晶体在574 cm-1处出现新峰,同时原来164 cm-1处峰消失;当压力达到6.0 GPa时,位于226,456,770和2 968 cm-1(CH₂伸缩振动)等处出现新峰,877 cm-1处的CC伸缩振动峰发生劈裂,产生894 cm-1新峰;当压力达到7.9 GPa时,在145,151和2 946 cm-1等出现新峰,同时原在CO₂摇摆振动峰的肩峰531 cm-1消失;当压力达到11.0 GPa时,位于249 cm-1处的振动峰开始劈叉,在241 cm-1处形成新峰,位于2 956 cm-1(CH₂伸缩振动)同时原位于391和431 cm-1处的峰消失;当压力达到17.5 GPa时,在200 cm-1处出现新峰。通过进一步分析L-丝氨酸的拉曼波数随压力的变化,发现很多拉曼峰在1.37,2.2,5.3,7.46和11.0 GPa以及15.5 GPa等压力点处都出现了拐点。其结果表明：L-丝氨酸在0.1～22.6 GPa之间共发生7处结构相变,分别位于压力区间0.1~1.37,2.2~2.7,5.3,6.0,7.46~7.9,10.1~11.0和15.5~17.5 GPa之间。而且,在6.0 GPa新的相变点在之前文献中未论述过。由于L-丝氨酸晶体在6.0 GPa时CC伸缩振动峰发生劈裂,这现象可能是由于压力引起L-丝氨酸晶体分子发生重排导致的,同时L-丝氨酸晶体分子重排导致氢键发生重排,使得L-丝氨酸晶体出现新的CH₂伸缩振动峰。L-丝氨酸晶体在10.1~11.0 GPa之间的拉曼光谱变化主要集中在低波数段,该波数段的拉曼振动模式主要与晶体晶格振动等低能量振动有关。同时在高波数段出现新的CH₂峰,由此可推测在10.1~11.0 GPa之间,L-丝氨酸晶体的晶格振动发生变化,产生了新的氢键,从而导致了L-丝氨酸晶体结构的改变。L-丝氨酸晶体在15.5~17.5 GPa之间,由于没有发现直接证据证明其发生结构相变,只是在拉曼波数随压力变化中,发现其在17.5 GPa时出现拐点,因此推测L-丝氨酸晶体在15.5~17.5 GPa之间可能发生结构相变。     

Reactive sintering for oriented and connected Bi-2223 superconductive oxides from a mixture of delaminated Bi-2212 and fine powdered supplemental ingredients

Single crystals of NdBa₂Cu₃O_7−δ (Nd123) have been successfully grown by the top-seeded solution-growth (TSSG) method in 1%, 21% and 100% oxygen partial pressure atmosphere ((P(O₂) = 0.01 atm, P(O)₂) = 0.21 atm and P(O₂) = 1.00 atm). Ba---Cu---O solvent with a Ba to Cu ratio of 3:5 was used in a Nd₂O₃ crucible. Nd is supplied by the reaction between the molten solvent and the Nd₂O₃ crucible. Compositions of Nd123 single crystals grown in different oxygen partial pressure atmospheres were analyzed by inductivity coupled plasma atomic emission spectrometry (ICP-AES) and confirmed to be Nd:Ba:Cu = 1.01:1.97:3.00 for P(O₂) = 0.01 atm, Nd:Ba:Cu = 1.07:1.95:3.00 for P(O₂) = 0.21 atm and Nd:Ba:Cu = 1.10:1.90:3.00 for P(O₂) = 1.00 atm, respectively. The Nd123 single crystals grown in different oxygen partial pressure atmospheres were annealed in a pure oxygen gas flow, and the temperature dependence of the DC magnetization for these crystals was measured using a superconducting quantum interference device (SQUID) magnetometer. The Nd123 single crystal grown in P(O₂) = 0.01 atm, and annealed at 340°C for 200 h showed a steep superconductive transition at 96 K. On the other hand, the Nd123 crystal grown in P(O₂) = 0.21, 1.00 atm and, annealed at 340°C for 200 h exhibited a broad transition at 92 K for P(O₂) = 0.21 atm and at 88 K for P(O₂) = 1.00 atm, respectively. Therefore for Nd123 single crystal production with high quality superconductive characteristics, a low oxygen partial pressure atmosphere during crystal growth is found to be effective for minimizing the substitution of Nd ions into Ba sites.     

LuTaO$lt;sub$gt;4$lt;/sub$gt;相变及结构

LuTaO₄是最高密度的闪烁体基质, 研究它的结构及其相变对单晶制备具有指导意义. 用固相法制备了Lu₂O₃和Ta₂O₅摩尔比为1:1时在不同温度下形成的多晶粉末, 用X射线衍射及Rietveld全谱拟合研究了多晶粉末的物相和结构. 结果表明, Lu₂O₃: Ta₂O₅摩尔比为1:1的样品在1740 ℃时合成的物相为M'-LuTaO₄, 在1800 ℃时为M'-LuTaO₄和M-LuTaO₄的混合物, 在1840 ℃时全部转变为M-LuTaO₄. 当温度升高到2058 ℃时, 样品呈熔融状态, 对淬火得到的样品进行结构精修, 给出了M-LuTaO₄, Lu₃TaO₇和Ta₂O₅的晶胞和原子坐标参数, 它们的重量比分别占78.1%, 18.9%和3.0%. 这些结果为制备以LuTaO₄为基质的高密度闪烁体单晶具有参考价值. 关键词： 4')" href="#">LuTaO₄ 相变 粉末衍射 Rietveld精修     

Pressure dependence of the thermal stability in LiMn2O4

Structural stability in terms of the decomposition temperature in LiMn₂O₄ was systematically investigated by a series of high-temperature and high-pressure experiments.LiMn₂O₄ was found to have structural stability up to 5 GPa at room temperature.Under ambient pressure,the compound decomposed at 1300℃.The decomposition temperature decreased with increasing pressure,yielding more complex decomposed products.Below the decomposition temperature,the crystal structure of LiMn₂O₄ varied with pressure.The presented results in this study offer new insights into the thermal and pressure stability of LiMn₂O₄ materials as a cathode for lithium-ion batteries that can operate under extreme conditions.Therefore,these findings may serve as a useful guide for future work for improving lithium-ion batteries.     

铁基超导体的量子临界行为

铁基超导体呈现丰富的电子相图, 各种有序态相互交叠. 本文主要介绍利用核磁共振手段在空穴型和电子型掺杂的BaFe₂As₂以及LaFeAsO_1-xF_x这三种具有代表性的铁基超导体中探测到的反铁磁序与超导序的微观共存、量子临界点和量子临界行为. 实验发现, 无论在空穴型还是电子型掺杂的铁基超导体中, 反铁磁相变温度都随着掺杂被抑制, 并最终在某个掺杂量降到零温而形成量子临界点. 在反铁磁转变温度之上存在结构相变, 其转变温度也随着掺杂而降低. 核磁共振谱证实结构相变也形成一个量子临界点. 本文介绍核磁共振及输运测量揭示的这两种量子临界点附近存在的量子临界行为, 共存态下奇异的超导性质等.     

High pressure structural phase transitions of TiO_2 nanomaterials

Recently, the high pressure study on the TiO_2 nanomaterials has attracted considerable attention due to the typical crystal structure and the fascinating properties of TiO_2 with nanoscale sizes. In this paper, we briefly review the recent progress in the high pressure phase transitions of TiO_2 nanomaterials. We discuss the size effects and morphology effects on the high pressure phase transitions of TiO_2 nanomaterials with different particle sizes, morphologies, and microstructures. Several typical pressure-induced structural phase transitions in TiO_2 nanomaterials are presented, including size-dependent phase transition selectivity in nanoparticles, morphology-tuned phase transition in nanowires, nanosheets,and nanoporous materials, and pressure-induced amorphization(PIA) and polyamorphism in ultrafine nanoparticles and TiO_2-B nanoribbons. Various TiO_2 nanostructural materials with high pressure structures are prepared successfully by high pressure treatment of the corresponding crystal nanomaterials, such as amorphous TiO_2 nanoribbons, α-PbO_2-type TiO_2 nanowires, nanosheets, and nanoporous materials. These studies suggest that the high pressure phase transitions of TiO_2 nanomaterials depend on the nanosize, morphology, interface energy, and microstructure. The diversity of high pressure behaviors of TiO_2 nanomaterials provides a new insight into the properties of nanomaterials, and paves a way for preparing new nanomaterials with novel high pressure structures and properties for various applications.     

B2O3添加宝石级金刚石单晶的生长特性

利用温度梯度法, 在5.3-5.7 GPa压力、1200-1600 ℃的温度条件下, 将B₂O₃粉添加到FeNiMnCo+C合成体系内, 进行B₂O₃添加宝石级金刚石单晶的合成. 研究得到了FeNiMnCo触媒生长B₂O₃添加宝石级金刚石单晶的相图分布规律. 结果表明B₂O₃添加会使晶体生长的“V”形区上移和低温六面体单晶生长区间变宽. 通过晶体生长实验, 研究合成了不同形貌的B₂O₃添加宝石级金刚石单晶. 研究同时证实, B₂O₃的过量添加会对宝石级金刚石单晶生长带来不利影响. 当B₂O₃的添加量高于约3 wt‰、生长时间超过20 h时, 很难实现优质B₂O₃添加宝石级金刚石单晶的生长. 但B₂O₃的适量添加(不超过1 wt‰), 有助于提高低温板状六面体宝石级金刚石单晶的成品率. 通过对晶体生长速度的研究发现, B₂O₃的添加使得优质晶体的生长速度明显降低, 随着晶体生长时间的延长, B₂O₃添加剂对晶体生长的抑制作用会越发明显. 扫描电镜测试结果表明, 合成体系内B₂O₃添加剂的引入, 导致晶体表面的平整度明显下降.     

Anomalous behavior and phase transformation of α-GaOOH nanocrystals under static compression

The structural compression mechanism and compressibility of gallium oxyhydroxide, α-GaOOH, are investigated by in situ synchrotron radiation x-ray diffraction at pressures up to 31.0 GPa by using the diamond anvil cell technique. Theα-GaOOH sustains its orthorhombic structure when the pressure is lower than 23.8 GPa. The compression is anisotropic under hydrostatic conditions, with the a-axis being most compressible. The compression proceeds mainly by shrinkage of the void channels formed by the coordination GaO_3(OH)_3 octahedra of the crystal structure. Anomaly is found in the compression behavior to occur at 14.6GPa, which is concomitant with the equatorial distortion of the GaO_3(OH)_3 octahedra. A kink occurs at 14.6 GPa in the plot of finite strain f versus normalized stress F, indicating the change in the bulk compression behavior. The fittings of a second order Birch–Murnaghan equation of state to the P–V data in different pressure ranges result in the bulk moduli B_0= 199(1) GPa for P 14.6 GPa and B_0= 167(2) GPa for P 14.6 GPa. As the pressure is increased to about 25.8 GPa, a first-order phase transformation takes place, which is evidenced by the abrupt decrease in the unit cell volume and b and c lattice parameters.     

Na2CO3的高压拉曼光谱研究

碳酸盐是碳在地球内部的重要载体之一,其在地幔高温高压条件下的晶体化学是理解地球深部碳的赋存状态和循环过程的关键,而结构稳定性和相变是晶体化学最基本的研究内容。碳酸钠（Na₂CO₃）是一种常见的碱性碳酸盐矿物,在产自地幔过渡带-下地幔的金刚石中已发现含钠的碳酸盐矿物包裹体,这成为碳酸钠能够俯冲进入地幔深部的直接矿物学证据。前人利用拉曼光谱技术研究了Na₂CO₃在常温常压下的晶格振动模式,但其在高压下的稳定性和结构变化却鲜有报道。利用金刚石压腔装置结合先进的共聚焦拉曼光谱技术,以硅油作为传压介质,在准静水压力条件下,在0.001～27.53 GPa压力区间对Na₂CO₃粉末在600~1 200 cm-1波段的振动特征进行了细致地分析。本次实验重点分析了[CO₃]2-基团振动模式在升压和卸压过程中的行为。结果表明,在0.001～11.88 GPa压力范围内,[CO₃]2-基团对称伸缩振动γ₁（1 088.06和1 070.76 cm-1）、反对称伸缩振动γ₃（865.10和797.50 cm-1）和面内弯曲振动γ₄（720.10和696.71 cm-1）都出现了振动峰的分裂。随着压力增加,所有振动峰都向高频率漂移,半高宽也逐渐增加。在13.40 GPa时,Na₂CO₃发生结构相变,具体表现为690.08 cm-1处出现1条新的拉曼峰,并且随着压力升高该峰的强度逐渐增大。同时反对称伸缩振动峰γ₃以及面内弯曲振动峰γ₄的强度持续减弱,半高宽也继续变大。这些现象表明Na₂CO₃结构相变源于[CO₃]2-内部晶格变化。当压力卸载到4.18 GPa时,[CO₃]2-的振动模式与常温常压下的完全吻合,相变出现的新峰也已经消失,表明该相变是由[CO₃]2-基团畸变引起的并且具有可逆性。继续升压至27.53 GPa,拉曼光谱继续蓝移,Na₂CO₃的拉曼谱线再没有变化,说明高压相在这一压强范围内保持稳定。在整个加压过程中,反对称伸缩振动γ₃和面内弯曲振动γ₄处的拉曼峰出现强度减弱现象。同时也计算了各个峰频率对压力的依赖系数dγ/dP,结果显示[CO₃]2-基团内各个振动模式对压力的响应是不同的,这很可能与Ｃ-Ｏ键的键长有关。最后,对比发现,对称伸缩振动γ₁峰的强度比反对称伸缩振动γ₃和面内弯曲振动γ₄峰的强度大,并且[CO₃]2-基团对称伸缩振动γ₁受压力影响相对较小,可以用来区别不同种类的碳酸盐矿物。     

掺铥钨酸镱钾激光晶体结构模拟及振动光谱

采用泡生法生长了掺铥钨酸镱钾（KTm_0.1Yb_0.9（WO₄）₂）激光晶体。利用X射线单晶衍射法和X射线粉末衍射法研究了KTm_0.1Yb_0.9（WO₄）₂晶体的物相与结构。采用X射线单晶衍射法并结合Diamond晶体结构绘图软件,获得了晶体内部结构模型图：该晶体是由WO₆、TmO₈/YbO₈和KO₁₂基团组成。W₂O₁₀二聚体通过WOW单氧桥相连,在平行于c轴方向上形成（W₂O₈）_n多重带。ReO₈和KO₁₂多面体共顶相连,沿[101]和[110]方向形成了具有二维层结构的延长带。X射线粉末衍射分析表明：该晶体具有低温β相双钨酸盐结构,属于单斜晶系,空间群C2/c;计算了晶胞参数、晶粒尺寸和结晶度。测试了晶体的振动光谱,对各个峰值的红外和拉曼活性及分子振动情况进行了归属,进一步验证了晶体中WO₆原子基团及单氧桥（WOW）和双氧桥（WOOW）的存在。     

高压下NH_4ClO_4结构、电子及弹性性质的第一性原理研究

研究高压下NH_4ClO_4的结构和性质对于NH_4ClO_4在固体推进剂和炸药的安全应用具有重要意义.采用基于色散校正密度泛函理论的第一性原理方法,研究了0—15 GPa静水压力下NH_4ClO_4的晶体结构、分子结构、电子性质和弹性性质,计算结果与实验值具有较好的一致性.在压强为1,4和9 GPa时,NH_4ClO_4的晶体参数、键长和分子构型等均出现不连续变化,说明了在压强作用下结构发生变化.随着压强增加,氢键增多且作用增强,由分子内氢键向分子内和分子间的氢键转变;导带态密度峰值增加,电子局域性增强,晶体内N-H和Cl-O共价键作用增强,带隙增大,不同相变区域内带隙呈线性关系.0—15 GPa条件下NH_4ClO_4的弹性常数满足力学稳定性标准,采用Voigt-Reuss-Hill方法计算了体积模量B,剪切模量G和杨氏模量E,根据Cauchy压力和B/G值,说明NH_4ClO_4属于韧性材料,随着压强增加韧性增强.     

112型铁基化合物EuFeAs2的单晶生长与表征

铁基超导体中含有一类特殊的112型结构化合物,其层状结构中含有一层锯齿形的As链构型.本文报道了用CsCl助熔剂法生长新型铁基112型EuFeAs₂母体单晶的具体方法,以及对该单晶的结构和物性的详细表征.通过能量色散X射线能谱扫描对单晶样品进行的化学成分分析,以及单晶X射线衍射的结构解析,确定该单晶样品属于EuFeAs₂相,结构精修得到EuFeAs₂具有空间群为Imm2（No.44）的正交晶体结构,晶格常数分别是a=21.285（9）Å,b=3.9082（10）Å,c=3.9752（9）Å.通过低温电阻测量,发现在110 K附近和46 K附近存在两个异常电阻跳变.进一步分析表明,110 K附近存在两个邻近的相变,这两个相变与铁基母体材料中常见的结构相变和Fe²⁺的反铁磁相变相符合.结合磁化率测量分析,可知46 K附近的相变属于Eu²⁺的反铁磁相变.     

基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结

MoS₂是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS₂是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS₂的方法,并通过引入WO₃粉末生长出了二硫化钼与二硫化钨的横向异质结(WS₂-MoS₂).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.     

Anomalous changes in CuO2 plane in YBa2Cu4O8 under pressure

We report the results of an atomistic simulation study of the pressure-induced structural changes in YBa₂Cu₄O₈ from 0 to 20 GPa. It is found that the crystal has similar compressibilities in the a- and b-directions over the whole pressure range, whereas in the c-direction there are quite different compressibilities at different pressures. Our results suggest that there exists a correlation between the charge transfer and the change in the Cu(2)---O(1) bond length, but we do not support the suggestion of a direct dependence of T_c on the length of this bond. However, we predict that there are anomalous changes in the CuO₂ plane with pressure, which we propose may lead to a charge carrier redistribution on in-plane copper and in-plane oxygens, which in turn may be related to the optimum carrier concentration in the CuO₂ plane.