The formation of a diamond layer on a carbide substrate during diamond interaction with Si,WC and Co

Abstract

A diamond layer was formed on a carbide substrate in an irregular temperature field at high pressures (HP). A gradient scheme of HP cell set-up has been developed, which provides for a simultaneous impregnation of opposite planes of a diamond layer by components that differ in melting temperature. The cell temperature field has been calculated and physico-mechanical properties of the obtained composite material have been studied.     

Potentials induced by the electron-optical-phonon interaction in a quantum well

The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation theory. We consider the interactions of an electron with both bulklike confined longitudinal optical (LO) phonons and four branches of interface optical (IO) phonons. The spatial distributionV _i(z) of the induced potential for QW structures with different heterolayer compositions and different well widths is calculated in detail. The numerical results show that the heterolayer composition of the QW plays an important role in determining the shape ofV _i(z) and that the existence of IO-phonons is important to the electronic states in QWs.     

Modeling of Lamb wave propagation in plate with two-dimensional phononic crystal layer coated on uniform substrate using plane-wave-expansion method

We show that the conversional three-dimensional plane wave expansion method can be revised to investigate the lamb wave propagation in the plate with two-dimensional phononic crystal layer coated on uniform substrate. We find that an imaginary three-dimensional periodic system can be constructed by stacking the studied plates and vacuum layers alternately, and then the Fourier series expansion can be performed. The difference between our imaginary periodic system and the true three-dimensional one is that, in our system, the Bloch feature of the wave along the thickness direction is broken. Three different systems are investigated by the proposed method as examples. The principle and reliability of the method are also discussed.     

New fabrication of a strained Si/Si1−yGey dual channel on a relaxed Si1−xGex virtual substrate using a Ge-rich layer formed by oxidation

This paper presents a new method of forming a Si/SiGe dual channel on a Si_0.8Ge_0.2 virtual substrate. Generally, in a CMOS process using a Si/SiGe dual channel, due to several processes involving ion-implantation, annealing and dry-etching after the deposition of the Si/SiGe dual channel, the surface can be damaged, leading to reduced electrical properties. However, if the dual channel is formed during a specific stage of the CMOS process, the defects of the dual channel can be reduced and the thermal stability will be excellent. Therefore, in this paper, a method for minimizing the defects of the dual channel is presented. This method uses the segregation of the Ge in the oxidation process of a SiGe. A Si/SiGe dual channel formed using this method achieved results that were identical to a dual channel deposited using the chemical vapor deposition (CVD) method.     

Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate

The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong ability to degrade wastewater, good corrosion stability and long lifetime. These excellent characteristics of BDD/Ta have been explained in terms of Rutherford backscattering (RBS) experiments. RBS investigation revealed that the continuous transient layer at the interface between boron-doped diamond film and Ta-substrate was formed and the microstructure of the continuous transient layer given by the continuous distribution of all element contents at the interface was obtained. The thicknesses of boron-doped diamond film and the continuous transient layer were about equal to 8000 × 10¹⁵ atoms/cm² and 5800 × 10¹⁵ atoms/cm², respectively. The formation of the continuous transient layer at the interface can eliminate the mismatch of thermal expansion coefficients (TEC) at the interface and only lead to the slow change of TEC because of the continuous distribution of element contents of the film and substrate in the transient layer at the interface. Thus, there is no residual stress to concentrate on the interface and the stress-corrosion delamination of the film disappears. Therefore, the corrosion stability and lifetime of BDD/Ta increase and last well, that have been verified by X-ray diffraction (XRD) experiments.     

Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5×10¹⁵ to 2.5×10¹⁵ cm⁻³, which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e₁, e₂, e₃, e₄ and e₅, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e₁ and e₅ produced by the irradiation with electron doses above 1×10¹⁵ cm⁻² were linked to In_P and P_In antisite defects, respectively, that probably form complexes. Traps e₃ and e₄ produced by the irradiation with doses above 1×10¹⁴ cm⁻² were associated with In and P vacancy related defects, respectively.     

Texture formation in polycrystalline diamond vapour growth under the influence of a pulsed supersonic beam

Polycrystalline diamond film deposition is studied under the influence of a pulsed supersonic beam. The beam is formed by a high-pressure value which is used as gas inlet in an otherwise conventional hot-filament reactor. The growth rate of the films as well as the typical size of the microcrystallites are independent of the stagnation pressure behind the nozzle of the valve as long as the background pressure and the gas flow through the chamber are kept constant. In contrast, a drastic change in texture formation is found.     

Effects of initial crystal size of diamond powder on surface residual stress and morphology in polycrystalline diamond (PCD) layer

Polycrystalline diamond compacts (PDC) were synthesized using diamond powder of average crystal size 3-20 μm by the Ni 70 Mn 25 Co 5 alloy infiltration technique at high temperature and high pressure (HPHT).The surface residual stress of polycrystalline diamond (PCD) layer was measured using micro-Raman spectroscopy with hydrostatic stress model and X-ray diffraction (XRD).Measurements of the stress levels of PCDs show that the residual compressive stresses range from 0.12 to 0.22 GPa,which increase with th...     

Formation of a knudsen layer in electronically induced desorption

For intense desorption fluxes, particles desorbed by electronic transitions (DIET) from a surface into a vacuum may thermalize in the gas cloud forming above the surface. In immediate vicinity to the surface, however, a non-equilibrium layer (the Knudsen layer) exists which separates the recently desorbed, non-thermal particles from the thermalized gas cloud. We investigate by Monte Carlo computer simulation the time it takes to form a Knudsen layer, and its properties. It is found that a Knudsen layer, and thus also a thermalized gas cloud, is formed after around 200 mean free flight times of the desorbing particles, corresponding to a desorption of 20 monolayers. At the end of the Knudsen layer, the gas density will be higher, and the flow velocity and temperature smaller, than literature values indicate for thermal desorption. These data are of fundamental interest for the modeling of gas-kinetic and gas-dynamic effects in DIET.     

Thermally induced effects on the diffraction pattern of a dye doped nematic film

We investigate the effects produced on the diffraction pattern of a dyed nematic thin film under the action of an optical field and a low frequency AC electric field. For a homeotropically aligned mixture of the nematic E7 doped with a dichroic dye, a sequence of dynamical regimes of the far field diffraction pattern is observed. For specific values of the beam's power, frequency and amplitude of the AC field, a uniform steady rotational motion (SR) of the pattern sets in with a measured angular velocity ν_exp =2.58 Hz. To account for this and other observed features of the diffraction pattern an analytical model is proposed. This allows us to describe quantitatively the reorientation of the film, to calculate some specific structural features of the diffraction pattern, as well as its angular velocity. We find that the predicted angular velocity ν_theor=5.7 Hz, is in quite good agreement with the measured value.     

Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers

The removal of particles from commercial silicon wafers by Steam Laser Cleaning was examined. Polystyrene colloids were used as model contaminants due to their well defined size and shape. In contrast to previous studies, where the experimental conditions on the surface were only roughly determined, special care was taken to control the amount of liquid applied to the surface. We report measurements of the cleaning threshold for different particle sizes. The comparability of the results was ensured by the reproducible conditions on the surface. Moreover, we studied the influence of different liquid film thicknesses on the cleaning process. Investigations of laser induced liquid evaporation showed that the cleaning threshold coincides with the fluence necessary for the onset of explosive vaporization. After particle removal, the surface was examined with an atomic force microscope. These investigations demonstrated that near field enhancement may cause defects on the nm-scale, but also showed that Steam Laser Cleaning possesses the capability of achieving damage-free removal for a large range of different particle sizes. Received: 14 January 2003 / Accepted: 16 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-7531/88-3127, E-mail: florian.lang@uni-konstanz.de     

The influence of substrate temperature variation on tungsten oxide thin film growth in an HFCVD system

Tungsten oxide (WO₃) thin films were deposited by a modified hot filament chemical vapor deposition (HFCVD) technique using Si (1 0 0) substrates. The substrate temperature was varied from room temperature to 430 °C at an interval of 100 °C. The influence of the substrate temperature on the structural and optical properties of the WO₃ films was studied. X-ray diffraction and Raman spectra show that as substrate temperature increases the film tends to crystallize from the amorphous state and the surface roughness decreases sharply after 230 °C as confirmed from AFM image analysis. Also from the X-ray analysis it is evident that the substrate orientation plays a key role in growth. There is a sharp peak for samples on Si substrate due to texturing. The film thickness also decreases as substrate temperature increases. UV-vis spectra show that as substrate temperature increases the film property changes from metallic to insulating behavior due to changing stoichiometry, which was confirmed by XPS analysis.     

Defect capture under rapid solidification of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface

A theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultra-short (τ_p=10^-13 s) powerful laser pulses is developed. The period and time of formation of surface relief are calculated. Regimes of multi-pulse laser ablation leading to formation of either a smooth surface or arrays of surface-relief spikes are pointed out and corresponding experimental results are interpreted from the viewpoint of the developed theory. Received: 4 December 2000 / Accepted: 23 July 2001 / Published online: 11 February 2002     

The temperature profile in the molten layer of a thin-film coated on a substrate induced by irradiation with a pulsed laser

The two-dimensional Laplace integral transform technique has been applied to get the temperature distributions in the molten layer of a thin-film coated on a substrate, the solid part of the film and the substrate during the irradiation with a pulsed laser. The derivation has taken into account the cooling and the temperature-dependent absorption coefficient of the irradiated surface. As an illustrative example computations were carried out on an aluminum thin-film coated on a glass substrate.     

Influence of magnetic field on ferrite transformation in a Fe-C-Mn alloy

The kinetics of ferrite transformation in a Fe-0.10mass%C-2.94mass%Mn alloy in a strong magnetic field of 8 T were studied with regard to alloying element-partitioned and partitionless growth. According to the theory of diffusion-controlled growth, the slow Mn diffusion dictates partitioned growth that occurs at a low undercooling, whereas partitionless growth at a larger undercooling is rate-controlled by fast carbon diffusion. The alloy was austenitized and isothermally reacted at temperatures that encompass the two growth modes. The nucleation and growth rates of ferrite increased at all temperatures in the magnetic field, whereas the amount of increase was somewhat greater at lower temperatures. In the region of slow growth, besides its sluggish diffusion Mn possibly destabilizes the ferrite phase due to the influence on the magnetic moment and the Curie temperature of bcc Fe solid solution, and partially offsets the accelerating effect of transformation. The temperature of transition from the slow to the fast growth is predicted to increase, due to the shift in the ferrite/austenite phase boundaries in the presence of magnetic field.     

Influence of atomic order on TA1[110] phonon softening [4] and displacive phase transition in Fe72Pt28 Invar alloys

The acoustic phonon dispersions of two Invar crystals , one ordered with the () structure, the other disordered fcc, have been investigated between 3.4 K and 470 K by inelastic and elastic neutron scattering. For the ordered crystal, pronounced softening of the whole phonon branch is observed on cooling below the Curie temperature. Particularly strong phonon softening at the M-point zone boundary of the structure leads to a displacive, antiferrodistortive phase transition at low temperatures. For the disordered crystal, much weaker softening of the phonons is observed and restricted to the region near the Brillouin zone center, where increasing elastic scattering with decreasing temperature indicates the growth of local tetragonal strain. This strain is considered as a typical precursor of the transformation to bct martensite. Specific heat measurements, performed at low temperatures on both crystals confirm the neutron scattering results and reveal considerable enhancement of the low energy phonon density of states in the ordered crystal. Received 18 January 1999     

A relation between a metallic film covering on diamond formed during growth and nanosized inclusions in HPHT as-grown diamond single crystals

One of the most important characteristics and basic phenomena during diamond growth from liquid metal catalyst solutions saturated with carbon at high temperature–high pressure (HPHT) is that there exists a thin metallic film covering on the growing diamond, through which carbon-atom clusters are delivered to the surface of the growing diamond by diffusion. A study of microstructures of such a metallic film and a relation between the thin metallic film and the inclusions trapped in HPHT as-grown diamond single crystals may be helpful to obtain high-purity diamond single crystals. It was found that both the metallic film and the HPHT as-grown diamond single crystals contain some nanostructured regions. Examination by transmission electron microscopy suggests that the microstructure of the thin metallic film is in accordance with nanosized particles contained in HPHT as-grown diamond single crystals. The nanosized particles with several to several tens of nanometers in dimension distribute homogeneously in the metallic film and in the diamond matrix. Generally, the size of the particles in the thin metallic film is relatively larger than that within the diamond matrix. Selected area electron diffraction patterns suggest that the nanosized particles in the metallic film and nanometer inclusions within the diamond are mainly composed of f.c.c. (FeNi)₂₃C₆, hexagonal graphite and cubic γ-(FeNi). The formation of the nanosized inclusions within the diamond single crystals is thought not only to relate to the growth process and rapid quenching from high temperature after diamond synthesis, but also to be associated with large amounts of defects in the diamond, because the free energy in these defect areas is very high. The critical size of carbide, γ-(FeNi)and graphite particles within the diamond matrix should decrease and not increase according to thermodynamic theory during quenching from HPHT to room temperature and ambient pressure. Received: 13 September 2001 / Accepted: 12 June 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-0531/295-5081; E-mail: yinlw@sdu.edu.cn     

Pressure induced anisotropy of electrical conductivity in polycrystalline molybdenum disulfide

Anisotropic specimens of MoS₂ are obtained by pressing the microcrystalline powder into special die. This inelastic compression results in a rearrangement of the disulfide micro platelets observed by atomic force microscopy and reflected in the macroscopic anisotropy in electrical conductivity in these samples. The conductivity measured parallel and perpendicular to the direction of applied pressure exhibits an anisotropy factor of ∼10 at 1 GPa. This behaviour of the conductivity as a function of applied pressure is explained as the result of the simultaneous influence of a rearrangement of the micro platelets in the solid and the change of the inter-grain distances.     

Controlled nucleation of point defects on a disclination line near a free surface during smectic-A-to-nematic directional melting

A disclination line populated with point defects that break the translational symmetry forms near a free nematic (N) interface in a confined geometry. The disclination line is, however, absent in the smectic-A phase (SmA). We use this fact to control the formation of point defect distributions on a disclination line by directional melting of the SmA phase in a temperature gradient. A threshold velocity ( v _th) exists below which a defect-free disclination line is formed. The frequency of nucleation of point defects increases steadily for v > v _th and exhibits a remarkable regularity. We derive an empirical scaling for v _th in terms of the experimental tuning parameters. We propose a simple model that allows to understand the formation of the point defects. Received 1 October 2002 / Published online: 15 April 2003 RID="a" ID="a"Permanent address: Departament de Quımica Fısica, Universitat de Barcelona, Martı i Franquès 1, Barcelona 08028, Spain; e-mail: jignes@qf.ub.es     

Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.