Computer study of the spectral characteristics and structures of (GaN)54(SiO2)50 nanoparticles

The dielectric, structural, and kinetic properties of (GaN)₅₄(SiO₂)₅₀ nanoparticles of the following two types are studied using the method of molecular dynamics: particles of GaN covered by a SiO₂ layer and particles of SiO₂ with a GaN layer deposited onto it. The absorption and reflection spectra of these nano-particles are considerably different in the respective frequency ranges 0 ≤ ω ≤ 1500 cm^?1 and ω > 700 cm^?1. The single-centered functions of the radial distribution of the nanoparticles differ in their peak positions and intensities, including the “tail” part for r > 0.9 nm. The structure of nanoparticles with the SiO₂ nucleus is completely tetrahedral, while the nearest six-atom environment is dominant in the structure of a particle with the GaN nucleus. The mobility of gallium atoms in the nanoparticles is lower by two orders than that of other elements constituting them.     

Raman spectroscopic study of structural disordering in YVO<Subscript>4</Subscript>, GdVO<Subscript>4</Subscript>, and CaWO<Subscript>4</Subscript> crystals

The Raman spectra of single-crystal YVO₄, GdVO₄, and ZrSiO₄ with a zircon structure, as well as CaWO₄ and BaWO₄ with a scheelite structure, are studied in detail over a wide temperature range 14–800 K. An inhomogeneous splitting of the A _1g (ν₂) vibrational lines in the Raman spectra of YVO₄ and GdVO₄ and the A _g (ν₁) vibrational lines in the spectrum of CaWO₄ is detected. It is shown that the profiles of these lines can be decomposed into two components, whose integrated intensities are redistributed with temperature and also depend on the matrix kind in which they are detected. The phenomenon observed is associated with the thermally activated processes of disorientation of the tetrahedral anions in the zircon and scheelite structures.     

Large-scale potential fluctuations caused by SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> compositional inhomogeneity

The short-range order in amorphous SiO _x (0 ≤ x ≤ 2) films has been studied by high-resolution X-ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO _x (x ≤ 2). An intermediate model of the SiO _x structure has been proposed. The measured photoelectron spectra of the SiO _x (x ≤ 2) valence band indicate the presence of the silicon phase and silicon oxide.     

Molecular structure of tris(acetylacetonato)scandium Sc(C<Subscript>5</Subscript>H<Subscript>7</Subscript>O<Subscript>2</Subscript>)<Subscript>3</Subscript>

Molecular structure of tris(acetylacetonato)scandium, Sc(C₅H₇O₂)₃, is investigated by gas-phase electron diffractometry. The main structural parameters of the molecule are evaluated. The average intemuclear distances and angles correspond to C₃ symmetry. The chief structural motif is trigonal antiprisms of six oxygen, carbon, and hydrogen atoms with a scandium atom at the center. It is found that r_g[Sc-O) = 204.1(8) pm and r_g(C−O) = 124.7(4) pm Translated fromZhurnal Struktumoi Khimii, Vol. 39, No. 4, pp. 633–639, July–August, 1998.     

Exciton absorption spectra of Cs<Subscript>2</Subscript>CdI<Subscript>4</Subscript> and Rb<Subscript>2</Subscript>CdI<Subscript>4</Subscript> ferroelastic solid solutions

The exciton absorption spectra of thin films of (Cs_{1 − x} Rb _x )₂CdI₄ solid solutions have been investigated and the refractive index n(λ) in their transparency window in the concentration range of 0 ≤ x ≤ 1 has been measured. The exciton-band parameters and optical permittivity ɛ_∞(x) have been found to linearly depend on the concentration. It is established that excitons are incorporated into the CdI₂ sublattice of the solid solutions and belong to intermediate-coupling ones. The characteristics of excitons in ferroelastics are compared with the corresponding parameters for CdI₂, RbI, and CsI, which are used as components to synthesize ternary compounds.     

Dielectric and polar order behaviors of BaTiO<Subscript>3</Subscript>-Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics

New perovskite solid solution ceramics of (1−x)BaTiO₃-xBi(Mg_1/2Ti_1/2)O₃ ((1−x)BT-xBMT, x≤0.09) were synthesized by the solid-state reaction technique. X-ray diffraction studies have revealed a stable single perovskite structure for all samples. Dielectric measurements were carried out at different frequencies and temperatures. The polarization evolutions with temperatures were measured to investigate the ferroelectric properties. All the compositions show features of ferroelectrics with diffuse phase transition, though the temperature T _m of their dielectric constant maximum ε _m is frequency dependent. The dielectric constant peak ε(T) of (1−x)BT-xBMT ceramics become broad with increasing BMT content. During the temperature range of ε(T) peak summit, (1−x)BT-xBMT ceramics present quasi-linear dielectric phenomenon under high electric field with very high dielectric constant.     

RETRACTED ARTICLE: Refractive-index tailoring and morphological evolutions in Gd<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript> and ZrO<Subscript>2</Subscript>–SiO<Subscript>2</Subscript> composite thin films

Refractive-index tailoring and morphological evolutions in two different thin film composite systems of gadolinia–silica (Gd₂O₃:SiO₂) and zirconia–silica (ZrO₂:SiO₂) deposited through reactive electron-beam codeposition processes are discussed in this research paper. For Gd₂O₃:SiO₂ the refractive-index tuning has been achieved from 1.45 to 2.18, whereas in the case of ZrO₂:SiO₂ the achieved tunable range is from 1.45 to 2.45 in the ultraviolet region. Under certain compositional mixings with lower silica fractions both the systems demonstrated relative microstructural and morphological densifications. Such evolutions were very successfully derived through phase-modulated ellipsometry and atomic force microscopy. The composition-dependent refractive-index tailoring and microstructural densifications have been investigated by adopting Tauc–Lorentz and single-effective-oscillator models. The morphological correlation functions have also very aptly supported such evolutions in these composite films. These experimental results indicate their favourable properties and applicability down to the extreme ultraviolet wavelength region of the electromagnetic spectrum. PACS 42.79.Wc; 78.66.-w; 78.20.Ci; 61.16.Ch; 42.70.-a;68.55.-a; 68.35.Bs; 81.15.Ef     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

An investigation into ultra-thin pseudobinary oxide (TiO<Subscript>2</Subscript>)<Subscript>x</Subscript>(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>1-x</Subscript> films as high-<Emphasis Type="Italic">k</Emphasis> gate dielectrics

As potential gate dielectric materials, pseudobinary oxide (TiO₂)_x(Al₂O₃)_1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 °C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO₂ and Al₂O₃. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO₂)_0.4(Al₂O₃)_0.6 film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications. PACS 77.55.+f; 73.40.Qv; 81.15.Fg     

Anisotropy of amorphous nanogranular composites CoNbTa-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> and CoFeB-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>

A comparative investigation of the magnetic properties of amorphous nanogranular composites (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} and (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} has been performed in the subpercolation region at temperatures in the range 4.2–300 K. The thermomagnetic dependences in the range 4.2–300 K and the processes of magnetization reversal and remanent magnetization relaxation at liquid-helium temperatures have been studied. It has been established that the average anisotropy constants of amorphous nanograins are equal to 3.6–7.0 kJ/m³ for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites and 5–8 kJ/m³ for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites. The fundamental differences in the concentration dependences of the anisotropy constant K _eff and the coercive force H _C have been revealed for the two systems under investigation. It has been demonstrated that, as the concentration of the metal phase increases, the quantities K _eff and H _C increase for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites and decrease for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites.     

Nanoclusters in mixed crystals Hg<Subscript>2</Subscript><Emphasis Type="Italic">Hal</Emphasis><Subscript>2</Subscript>

The Raman spectra of mixed Hg₂(Br,I)₂ and Hg₂(Cl,Br)₂ crystals were investigated. The multimode behavior of optical vibrations induced by presence of three types of molecules (Hg₂ Hal′₂, Hg₂ Hal″₂ and Hg₂ Hal′Hal″) in the crystals was observed experimentally and is discussed theoretically. Phase transition effects such as soft modes, density of states, IR vibration branches, and anti- and ferroelectric nanoclusters induced by polar Hal′-Hg-Hg-Hal″ molecules and their immediate environment, were observed in the Raman spectra.     

Luminescent properties of SrMg<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript>:Eu<Superscript>2+</Superscript>, and Mn<Superscript>2+</Superscript> as a potential phosphor for ultraviolet light-emitting diodes

Eu²⁺ and Mn²⁺ co-doped SrMg₂(PO₄)₂ phosphors with blue and red two emission bands were prepared by the high temperature solid state method and their luminescent properties have been investigated as a function of activator and co-activator concentrations. Resonance-type energy transfers from Eu²⁺ to Mn²⁺ were discovered by directly overlapping the Eu²⁺ emission spectrum and the excitation spectrum of Mn²⁺. Efficiencies of energy transfer were also calculated according to the changes of relative intensities of Eu²⁺ and Mn²⁺ emission. According to the principle of energy transfer, we demonstrated that the phosphor SrMg₂(PO₄)₂:Eu²⁺,Mn²⁺ with double emission bands exhibited a great potential as a phosphor for ultraviolet light-emitting diodes and the relative intensities of blue and red emission could be tuned by adjusting the contents of Eu²⁺ and Mn²⁺. PACS 78.55.-m     

Improvement of the intergranular pinning energy in uniaxially compacting (Bi-Pb)<Subscript>2</Subscript>Sr<Subscript>2</Subscript>Ca<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>10+δ</Subscript> ceramic samples

Measurements of the electrical resistivity as a function of temperature, ρ(T), for different values of applied magnetic field, B_a (0 ≤ B_a ≤ 50 mT), were performed in polycrystalline samples of Bi_1.65Pb_0.35Sr₂Ca₂ Cu₃O_10+δ subjected to different uniaxial compacting pressure (UCP). We have found appreciable differences in the grain orientation between samples by using X-ray diffractometry. From the X-ray diffraction patterns performed, in powder and pellet samples, we have estimated the Lotgering factor along the (00l) direction, F_(00l). The results indicate that F_(00l) increases ~23% with increasing UCP suggesting that grains of these samples are preferentially aligned along the c-axis, which is parallel to the compacting direction. The resistive transition of the samples have been interpreted in terms of the thermally activated flux-creep model. In addition, the effective intergranular pinning energy, U₀, have been determined for different applied magnetic field. The magnetic field dependence of U₀, for B_a > 8 mT, was found to follow a H^{- α} dependence with α = 0.5 for all samples. The analysis of the experimental data strongly suggested that increasing UCP results in appreciable changes in both the grain alignment and the grain connectivity of the samples. We have successfully interpreted the data by considering the existence of three different superconducting levels within the samples: the superconducting grains, the weak-links, and the superconducting clusters.     

Photoluminescence of nanoparticles of (Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>(Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.05</Subscript> solid solution

We have ground bulk samples to obtain nanoparticles of (Ga₂S₃)_1–x (Eu₂O₃) _x solid solutions, the sizes of which were determined using an atomic force microscope. The photoluminescence spectra of the nanoparticles were studied in the temperature interval 77–300 K. We have established the mechanisms for emission and transfer of energy from the matrix to the rare-earth ion, and we determined the Stokes shift (ΔS = 0.7 eV), the Huang–Rhys parameter (S = 16), and the optical phonon energy (ħ−ω = 23 meV).     

Electronic spectra and phase transitions in thin [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CuCl<Subscript>4</Subscript> microcrystals

Optical absorption spectra in thin [N(CH₃)₄]₂CuCl₄ crystals in the thickness range 10 μm ≤ d < 100 μm have been studied. Strengthening of the crystal field has been found with a decrease in the [N(CH₃)₄]₂CuCl₄ crystal size. The reasons for absorption band shifts in the visible region depending on the [N(CH₃)₄]₂CuCl₄ crystal thickness and the manifestation of a size effect in crystals with an incommensurate superstructure are discussed.     

Density functional study of low-lying isomers of SiO<Subscript>4</Subscript>, GeO<Subscript>4</Subscript> and CO<Subscript>4</Subscript>, and their relation to tetrahedral solid phases

In silica (SiO₂) and in most silicates, atomic associations exist with composition SiO₄ and a structure with four O atoms in tetrahedral coordination around the Si atom. A similar feature is observed in germania (GeO₂) and some solids containing Ge instead of Si, although the number of phases containing GeO₄ tetrahedra is smaller. In contrast, and in spite of the fact that C is in the same column of the periodic table as Si and Ge, CO₂ is a molecular solid, and crystalline and amorphous phases of CO₂ showing CO₄ tetrahedra are only obtained under extremely high pressures. We have investigated the relation between free SiO₄, GeO₄ and CO₄ clusters and the tetrahedral associations found in the solids mentioned above. The lowest energy structure of those three free clusters is planar, but they have near-tetrahedral and distorted-tetrahedral isomers. The promotion energy from the planar structure to the distorted tetrahedral is low in SiO₄, large in CO₄, and intermediate in GeO₄. This correlates with the facility to form tetrahedral associations in the solids.     

Electrical characterization of the [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>][N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]ZnCl<Subscript>4</Subscript> compound

The [N(CH₃)₄][N(C₂H₅)₄]ZnCl₄ compound has been synthesized by a solution-based chemical method. The X-ray diffraction study at room temperature revealed an orthorhombic system with P2₁2₁2 space group. The complex impedance has been investigated in the temperature and frequency ranges 420–520 K and 200 Hz–5 MHz, respectively. The grain interior and grain boundary contribution to the electrical response in the material have been identified. Dielectric data were analyzed using the complex electrical modulus M ^* for the sample at various temperature. The modulus plots can be characterized by full width at half height or in terms of a non-exponential decay function ϕ(t) = exp[(−t/τ) ^β ]. The detailed conductivity study indicated that the electrical conduction in the material is a thermally activated process. The variation of the AC conductivity with frequency at different temperatures obeys the Almond and West universal law.     

Vibrational modes of acid hydrogen in CsH<Subscript>5</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript> and NaH<Subscript>5</Subscript>P<Subscript>2</Subscript>O<Subscript>6</Subscript>: inelastic neutron scattering

The vibrational modes of hydrogen bonds in CsH₅(PO₄)₂ and NaH₅P₂O₆ compounds are analyzed via inelastic incoherent neutron scattering in a wide range of temperatures and Raman light scattering at room temperature. The energy ranges have been determined for the γ, jg, and ? bands of the vibrational modes of acid hydrogens of these compounds. The dependences of the energy on the length of hydrogen bonds in CsH₅(PO₄)₂ have been revealed.     

The influence of Fe,Cu, SiO<Subscript>2</Subscript>, TiO<Subscript>2</Subscript>, and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles in aqueous solution on proton relaxation times

Measurements of proton nuclear spin-spin and spin-lattice relaxation times are applied for determining the concentration of solid-phase nanoparticles in nanofluids. This approach is tested for metal oxides SiO₂, TiO₂, Al₂O₃ and metal-carbon nanoparticles of 3d-metals Fe and Cu. It is shown that the sensitivity of the method for determining concentrations of 3d-metals is much higher than for oxides (by 2–4 orders of magnitude). It is revealed that measurement of the proton spin-spin relaxation time allows one to determine the concentration of Cu nanoparticles to 0.0001 mg/ml and that of Fe nanoparticles to 0.00001 mg/ml.     

Spin-spin interaction and the EPR spectrum of KDy(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The EPR spectrum of a KDy(WO₄)₂ monoclinic crystal is investigated. It is found that the EPR spectrum of magnetically concentrated materials at a low frequency (9.2 GHz) undergoes a substantial transformation in addition to the well-known broadening of the EPR lines. At low Dy³⁺ concentrations (x<10^?2), the EPR spectrum of an isomorphic crystal, namely, KY_(1?x)Dy_x(WO₄)₂, is characterized by the parameters g_x=0, g_y=1.54, and g_z=14.6. For a magnetically concentrated crystal KDy(WO₄)₂, the g values are as follows: g_x=0, g_y=0.82, and g_z=2.52. It is demonstrated that the difference in the parameters is associated with the specific spin-spin interaction between Dy³⁺ ions, including the Dzyaloshinski interaction, which is not observed at high frequencies.