共查询到18条相似文献,搜索用时 62 毫秒
1.
2.
3.
4.
5.
超大规模集成电路的CVD薄膜淀积技术 总被引:1,自引:0,他引:1
介绍了在超大规模集成电路制造工艺中,用化学气相(CVD)方法淀积各种薄膜的反应机理和特性,及这些薄膜在器件制造工艺中的应用。 相似文献
6.
介绍了在超大规模集成电路制造工艺中 ,用化学气相 (CVD)方法淀积各种薄膜的反应机理和特性 ,及这些薄膜在器件制造工艺中的应用。 相似文献
7.
8.
9.
本文研究了利用金属有机物化学汽相淀积系统(MOCVD)生长高质量不同Al组分AlxGa1-xN薄膜(0.13〈x〈0.8)。扫面电子显微镜(SEM)照片表明生长的AlN插入层有效地调节了AlGaN层与GaN支撑层的应力,使AlGaN表面平整无裂纹,原子力显微镜(AFM)测量得到所有AlGaN薄膜粗糙度均小于1nm。通过原位干涉谱发现,AlGaN薄膜生长速率主要由Ga流量大小控制,随Al组分升高逐渐降低。利用X射线衍射和卢瑟福背散射(RBS)两种方法确定AlGaN薄膜的Al组分,发现Al组分与摩尔比TMAl/(TMGa+TMAl)关系为线性,说明在优化的生长条件下,Al原子与NH3的寄生反应得到了有效的抑制。 相似文献
10.
11.
Low dielectric constant materials 总被引:3,自引:0,他引:3
H. Treichel 《Journal of Electronic Materials》2001,30(4):290-298
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric
or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical, and chemical
properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints
and the accelerated decrease of feature sizes below 0.25 μm, one can no longer rely on traditional choices but has to search
for alternatives, both for low and high permittivity replacements. In this article we survey currently used low dielectric
constant materials and future trends for microelectronic applications. 相似文献
12.
新型低介电常数材料研究进展 总被引:6,自引:1,他引:5
在超大规模集成电路中,随着器件集成度的提高和延迟时间的进一步减小,需要应用新型低介电常数(k<3)材料。本文介绍了当前正在研究和开发的几种低介电材料,其中包括聚合物、掺氟、多孔和纳米介电材料。 相似文献
13.
Yuhuan Xu D. W. Zheng Yipin Tsai K. N. Tu Bin Zhao Q. Z. Liu Maureen Brongo Chung Wo Ong Chung Loong Choy George T. T. Sheng C. H. Tung 《Journal of Electronic Materials》2001,30(4):309-313
This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric
constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated
by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with
an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of
thermal expansion for both dense and porous polymer films were measured. 相似文献
14.
15.
16.
17.
18.
Thickness dependent dielectric soft-breakdown and corresponding activation energy in low dielectric constant (low-k) thin films with thickness ranging from 48 to 1141 nm are investigated to evaluate the reliability of polymer integration on device wafers for the first time. It is found that the strength against soft-breakdown decreases and the leakage current increases with the decrease in low-k film thickness. In the regions both before and after soft-breakdown, the conduction activation energy increases with the increase in low-k film thickness. The conduction activation energy before soft-breakdown is smaller than that after soft-breakdown. 相似文献