Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs／GaAs Single Quantum Well

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800℃ for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8 meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1 eV, respectively.     

Thickness-dependent excitonic properties of atomically thin 2H-MoTe_2

Two-dimensional(2D)2H-MoTe_2 is a promising semiconductor because of its small bandgap,strong absorption,and low thermal conductivity.In this paper,we systematically study the optical and excitonic properties of atomically thin 2H-MoTe_2(1–5 layers).Due to the fact that the optical contrast and Raman spectra of 2H-MoTe_2 with different thicknesses exhibit distinctly different behaviors,we establish a quantitative method by using optical images and Raman spectra to directly identify the layers of 2H-MoTe_2 thin films.Besides,excitonic states and binding energy in monolayer/bilayer 2H-MoTe_2 are measured by temperature-dependent photoluminescence(PL)spectroscopy.At temperature T=3.3 K,we can observe an exciton emission at～1.19 eV and trion emission at～1.16 eV for monolayer 2H-MoTe_2.While at room temperature,the exciton emission and trion emission both disappear for their small binding energy.We determine the exciton binding energy to be 185 meV(179 meV),trion binding energy to be 20 meV(18 me V)for the monolayer(bilayer)2H-MoTe_2.The thoroughly studies of the excitonic states in atomically thin 2H-MoTe_2 will provide guidance for future practical applications.     

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AIGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2-7μm has been obtained with peaks at 3.1, 4.8 and 5.7μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector （QDIP） is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP, The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.     

Static recording characteristics of new type super-resolution near-field structure

A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD) camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar~+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.     

Ytterbium-sensitized thulium-doped fiber laser with a single-mode output operating at 1900-nm region

A single-mode laser is demonstrated using a newly developed double-clad thulium-ytterbium-doped fiber (TYDF) in a linear cavity formed by two fiber Bragg gratings (FBGs). The YTF used is drawn from a D-shape preform fabricated using the modified chemical vapor deposition and solution doping technique. The laser is operated at 1 901.6 nm via the transition of thulium ions from 3F4 to 3H6 with the assistance of ytterbium to thulium ion energy transfer. The efficiencies of the laser are 0.71% and 0.75% at 927- and 905-nm multimode pumping, respectively. The thresholds of the launched pump power for 927- and 905-nm pumping are 1 314 and 1 458 mW, respectively. A 7-mW output is obtained at a 905-nm pump power of 2 400 mW.     

The influence of isotope substitution of neon atom on the integral cross sections of rotational excitation in Ne-Na2 collisions

This paper applies the multiple ellipsoid model to the 16 Ne (20 Ne,28 Ne,34 Ne)-Na 2 collision systems,and calculates integral cross sections for rotational excitation at the incident energy of 190 meV.It can be seen that the accuracy of the integral cross sections can be improved by increasing the number of equipotential ellipsoid surfaces.Moreover,by analysing the differences of these integral cross sections,it obtains the change rules of the integral cross sections with the increase of rotational angular quantum number J,and with the change of the mass of isotope substitution neon atom.Finally,the contribution of different regions of the potential to inelastic cross sections for 20 Ne-Na 2 collision system is investigated at relative incident energy of 190 meV.     

Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski

Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350K) and magnetic field (0-1.35 T). In Te-doped InSb, an impurity level with energy E1 = 3 meV and the activation energy E0 = 0.26 eV, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed.     

Reaction mechanism of D + ND→N + D_2 and its state-to-state quantum dynamics

The quantum state-to-state calculations of the D + ND→N + D_2 reaction are performed on a potential energy surface of 4 A' state. The state-resolved integral and differential cross sections and product state distributions are calculated and discussed. It is found that the rotational distribution, rather than the vibrational distribution, of the product has an obvious inversion. Due to the fact that it is a small-impact-parameter collision, its product D_2 is mainly dominated by rebound mechanism, which can lead to backward scattering at low collision energy. As the collision energy increases, the forward scattering and sideward scattering begin to appear. In addition, the backward collision is also found to happen at high collision energy, through which we can know that both the rebound mechanism and stripping mechanism exist at high collision energy.     

Tuning the energy gap of bilayer α-graphyne by applying strain and electric field

Our density functional theory calculations show that the energy gap of bilayer α-graphyne can be modulated by a vertically applied electric field and interlayer strain. Like bilayer graphene, the bilayer α-graphyne has electronic properties that are hardly changed under purely mechanical strain, while an external electric field can open the gap up to 120 meV. It is of special interest that compressive strain can further enlarge the field induced gap up to 160 meV, while tensile strain reduces the gap. We attribute the gap variation to the novel interlayer charge redistribution between bilayer α-graphynes.These findings shed light on the modulation of Dirac cone structures and potential applications of graphyne in mechanicalelectric devices.     

Enhancement of electron–ion recombination rates at low energy range in the heavy ion storage ring CSRm

Recombination of Ar¹⁴⁺, Ar¹⁵⁺, Ca¹⁶⁺, and Ni¹⁹⁺ ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^3.0, reproducing the low-energy recombination enhancement effects found in other previous experiments.     

Separation and insertion of optical bit-serial label in optical packet switching

The bipolar phase-shift-keying (BPSK) optical orthogonal codes (OOCs) are inserted into the optical packet format of bit-serial label. The ultra-fast separation of the label and payload is performed through the auto-correlation pulses indicating the time position at which the optical switch changes the state.The insertion of the new label can also be realized by detecting the auto-correlation pulse at the line rate. Especially, the scheme can be adapted to the asynchronous separation and insertion and realize the variable-length packet switching. The results of simulation verify the feasibility of the scheme.     

Separation and insertion of optical bit-serial label in optical packet switching

The bipolar phase-shift-keying (BPSK) optical orthogonal codes (OOCs) are inserted into the optical packet format of bit-serial label. The ultra-fast separation of the label and payload is performed through the auto-correlation pulses indicating the time position at which the optical switch changes the state. The insertion of the new label can also be realized by detecting the auto-correlation pulse at the line rate. Especially, the scheme can be adapted to the asynchronous separation and insertion and realize the variable-length packet switching. The results of simulation verify the feasibility of the scheme.     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

Edge effect and interface confinement modulated strain distribution and interface adhesion energy in graphene/Si system

In order to clarify the edge and interface effect on the adhesion energy between graphene(Gr)and its substrate,a theoretical model is proposed to study the interaction and strain distribution of Gr/Si system in terms of continuum medium mechanics and nanothermodynamics.We find that the interface separation and adhesion energy are determined by the thickness of Gr and substrate.The disturbed interaction and redistributed strain in the Gr/Si system induced by the effect of surface and interface can make the interface adhesion energy decrease with increasing thickness of Gr and diminishing thickness of Si.Moreover,our results show that the smaller area of Gr is more likely to adhere to the substrate since the edge effect improves the active energy and strain energy.Our predictions can be expected to be a guide for designing high performance of Grbased electronic devices.     

Photoluminescence from Er3+ ion and SnO2 nanocrystal co-doped silica thin films

Er3+ ions embedded in silica thin films co-doped by SnO2 nanocrystals are fabricated by sol-gel and spin coating methods. Uniformly distributed 4-nm SnO2 nanocrystals are fabricated, and the nanocrystals showed tetragonal rutile crystalline structures confirmed by transmission electron microscope and X-ray diffraction measurements. A strong characteristic emission located at 1.54 μm from the Er3+ ions is identified, and the influences of Sn doping concentrations on photoluminescence properties are systematically evaluated. The emission at 1.54 μm from Er3+ ions is enhanced by more than three orders of magnitude, which can be attributed to the effective energy transfer from the defect states of SnO 2 nanocrystals to nearby Er3+ ions, as revealed by the selective excitation experiments.     

Crystallization behaviors of ultrathin Al-doped HfO_2 amorphous films grown by atomic layer deposition

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films(about 4-nm thick) are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.     

Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition

The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.     

Temperature－Induced Switching－Over of the Luminescence Transitions in GaInNAs／GaAs Quantum Wells

Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the handrail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA)effectively reduces the localized energy and causes a decrease of the switching-over temperature.     

Realization of a low threshold multiwavelength brillouin/erbium fiber laser by optimizing the reflected power

A multiwavelength Brillouin/erbium fiber laser (BEFL) with low threshold power is realized. A low threshold power of 3 mW and a wide tuning range of 18 nm can be achieved by controlling the reflected power in the nonlinear optical loop mirror (NOLM). Up to 24 lines with a wavelength spacing of 0.086 nm are generated at the Brillouin pump and at the 1 480-nm pump with 0.5 dBm (0.9 mW) and 25 mW of power, respectively.     

Multiphoton ionization and dissociation of CH_3I at 266 and 355 nm

The mechanisms of multiphoton ionization(MPI)and dissociation of CH_3I have been studied using time- of-flight(TOF)mass spectrometer at 266 and 355 nm.MPI mass spectrum at 266 nm consists mostly of fragment ions.This is consistent with a neutral-fragment photoionization mechanism in which rapid one-photon dissociation occurs from the repulsive potential energy surface followed by MPI of neutral photofragments.The observation of parent ions at 355-nm excitation is indicative of parent-ionic ladder mechanism in which the parent ions are produced directly by two-photon excitation resonantly excited to Rydberg C state and then ionized through additional one-photon absorption to produce CH_3I~ .Fragment ions are produced by dissociation of CH_3I~ .