双波长InGaN/GaN多量子阱发光二极管的光电特性

为了实现高显色指数和流明效率的白光发光二极管,在(0001)蓝宝石衬底上利用金属有机化学气相沉积系统,生长了双波长发射的InGaN/GaN多量子阱发光二极管结构.通过对不同In组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析,结果表明In组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重...     

GaN垒层厚度渐变的双蓝光波长发光二极管

针对单蓝光波长芯片与Y3Al5O12∶Ce3+黄光荧光粉封装白光发光二极管存在显色性不足的问题,提出了采用双蓝光波长芯片激发Y3Al5O12∶Ce3+黄光荧光粉实现高显色性白光发射法,并分析了其可行性.利用金属有机化学气相沉积系统在(0001)蓝宝石衬底上顺序生长两个In0.18Ga0.82N/GaN量子阱和两个In0.12Ga0.88N/GaN量子阱的双蓝光波长发光二极管,并对不同GaN垒层厚度的双蓝光波长发光二极管的光电性能进行分析,结果表明沿n-GaN到p-GaN方向减小GaN垒层厚度能实现双蓝光发射,并有较好的发光效率.交流阻抗谱结果显示相关双蓝光波长发光二极管可以用一个电阻Rp与电容Cp并联后与一个Rs串联电路来模拟,GaN垒层变化能调节并联电阻和电容,对串联电阻没有影响.此外,基于垒层减小的双蓝光波长芯片激发Y3Al5O12∶Ce3+荧光粉实现了高显色指数的白光发射.     

高显色白光LED的制备及其变温特性

分别用黄色、红色荧光粉和黄色、红色、绿色荧光粉制备了两种高显色指数白光发光二极管(LED),调整荧光粉的比例使显色指数达到最高。对两种样品进行光学测试,发现加绿粉的样品光通量比较大,这是因为加绿粉后绿光成分较多,而绿光的视效函数比红光的大得多。对两种样品进行10℃～90℃的变温测试,发现发光效率都降低,显色指数反而升高。发光效率降低一方面是由芯片的内量子效率降低引起的,另一方面是芯片的发射波长红移使其与荧光粉的激发波长不匹配,并且荧光粉在升温时激发效率会降低。显色指数升高是因为高温时芯片发出的蓝光光谱变宽,使得整个光谱相对于室温时的光谱更平滑,更接近太阳光谱。     

基于分层远程荧光膜白光LED的制备及光谱性能研究

基于荧光粉分层和远程荧光封装技术,采用热压法制备出双层远程荧光膜,并封装出白光LED。通过荧光分光光度计和可见光光谱分析系统研究了绿色和红色远程荧光膜不同分层顺序及不同发射波长对于白光LED光谱性能的影响。研究发现：蓝-绿-红(B-G-R)膜层封装形式相较于蓝-红-绿(B-R-G)辐射发光效率提高了31.69%,色保真度和色域指数均随着红色远程荧光膜波长的增加而升高,发射波长为660 nm时制备的白光LED色保真度最高值达到91,色域指数最高值达到104,辐射发光效率值则与波长成反比关系;色保真度随着绿色远程荧光膜波长的增加逐渐降低,色域指数则先降低后升高,发射波长为530 nm制备的白光LED具有最高的辐射发光效率,达到300.7 lm·W-1。研究所得出的相关结论对于实际的应用具有一定的参考意义。     

白光发光二极管用SrGdLiTeO_6:Eu~(3+)红色荧光粉的浓度猝灭和温度猝灭行为

采用高温固相法成功合成出双钙钛矿结构SrGd_(1-x)LiTeO_6:xEu~(3+)(x=0.1-1.0)红色荧光粉,并采用X-射线衍射、漫反射光谱、光致发光光谱、电致发光光谱等测试手段对粉体的结构、光致发光特性以及发光二极管器件的光色电特性进行了系统研究.激发光谱、发射光谱和荧光衰减曲线测试结果表明Eu~(3+)的最佳掺杂浓度为x=0.6,更大的掺杂量会引起浓度猝灭.基于van Uitert浓度猝灭公式,提出一种更准确的表达形式用于拟合、分析能量传递类型,揭示出电偶极-电偶极作用导致浓度猝灭.Judd-Ofelt理论计算得出较高的跃迁强度参数和量子效率,说明高度畸变的非心C_1晶体场促使高效的超灵敏跃迁红光发射.在423 K时积分发光强度达到室温时的85.2%,热激活能经计算为0.2941 eV.基于此样品的发光二极管能够发出明亮的红光.综上所述,该类荧光粉表现出良好的发光效率、色纯度以及发光热稳定性,是一种潜在的近紫外激发白光发光二极管用红色荧光粉.     

反对称n-AlGaN层对GaN基双蓝光波长发光二极管性能的影响

采用数值分析方法对在InGaN/GaN混合多量子阱活性层和n-GaN之间引入n-AlGaN层的GaN基双蓝光波长发光二极管进行模拟分析.结果发现,与传统的具有p-AlGaN电子阻挡层的双蓝光波长发光二极管相比,这种反对称n-AlGaN层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性及减少电子溢出,实现电子空穴在各个量子阱中的平衡辐射,从而减弱了双蓝光波长发光二极管的效率衰减.此外,通过改变Al组分可以提高双蓝光波长发光二极管发射光谱的稳定性:当Al组分为0.16时,双蓝光波长发光二极管的光谱在小电流下比较稳定,而Al组分为0.12时,光谱在大电流下比较稳定.     

高效绿光钙钛矿发光二极管研究进展

钙钛矿发光二极管具有发光效率高、色纯、发光波长在可见光区间连续可调等优点,近来成为研究前沿热点.作为人眼最为敏感的波段,绿光发射的钙钛矿发光二极管对于白光照明和平板显示具有重要意义,得到了科研人员的广泛关注.本文主要介绍绿光钙钛矿发光二极管的发展历史、钙钛矿材料和发光二极管器件的基本结构以及提升绿光钙钛矿发光二极管效率的主要方法.最后本文对未来绿光钙钛矿发光二极管可能的发展方向进行了简要的预测,以期对未来该领域的研究提供一些思路.     

白光有机发光器件在照明中的应用

作为下一代固态照明光源,白光有机电致发光二极管(white organic light-emitting diodes, WOLEDs)由于其高效、节能、环保等特点,已经引起了广泛的关注,将其用做照明光源的研究和应用也取得了长足的发展。文中首先简述了WOLEDs的发光原理,总结了目前常见的WOLEDs的结构和常用的发光材料,重点介绍了多发射层白光器件、多重掺杂单发射层白光器件、基于激基缔合物和激基复合物发射的白光器件、p-i-n结构的白光器件等器件结构的发光机理及其优缺点。本文依据WOLEDs高效率、高亮度、高显色性、长寿命的实用条件,详细解释了器件效率,色纯度,相关色温和器件寿命等性能评价标准。我们还分析了WOLEDs目前亟需解决的技术瓶颈,并针对器件效率和器件寿命两个主要方面提出了相应的改善方案。介绍了世界上照明用WOLEDs各公司的研究进展并对其市场前景做出了展望。     

4,4′-双(4″,4″,4″-三氟代-1″,3″-二氧代丁基)间位联苯基苯双核铕配合物的合成与发光

合成了一个新的双核铕配合物Eu2(bdb)3·4H2O[H2bdb=4,4′-双(4″,4″,4″-三氟代-1″,3″-二氧代丁基)-间位联苯基苯]。元素分析、红外光谱、质谱证实其配位方式是三个配体同时和两个铕离子绞合配位。该配合物发出铕离子特征红光,发射峰值位于614nm,其激发光谱的激发峰值位于370nm。配合物的发光寿命为336μs,寿命曲线很好地和单指数衰减拟合曲线相吻合,进一步证实配合物只有一个对称中心铕离子存在。配合物热稳定性达到230℃,满足制备LED器件的要求。将该配合物与370nm发射的InGaN芯片组合成功地制备了红色发光二极管,当配合物和硅树脂的质量比为1:30时,红色发光二极管的色坐标为x=0.6353,y=0.3340,发光效率为1.36lm/W。结果表明:该配合物是制备半导体高显色指数白光LED潜在的红色有机发光材料。     

直接出射白光的新型发光二极管

介绍了实现出射白光发光二极管的几种方法,包括波长转化产生白光,多有源区级联合成白光以及单个有源区直接出射白光.并从芯片结构、材料选取、白光形成机理以及器件性能等四个方面对这几种方法进行了分析比较.最后指出了实现直接出射白光的发光二极管存在的问题及今后的研究重点.     

A model for LED spectra at different drive currents

A mathematical model for the spectra of monocolor light-emitting diodes （LEDs） and phosphor-coated white LEDs at different drive currents is established.The simulation program of the color rendering of a white light LED cluster is developed based on this model.The program can predict not only the spectral power distribution and color rendering index （CRI）,but also the number of LEDs,drive currents,input power,and luminous efficacy of a white light LED cluster at a given color temperature according to the requirement of the luminous flux.The experimental results show that the relative spectral power distributions （SPDs） and chromaticity coordinates of the model LED are very close to that of the real LED at different drive currents.Moreover,the correlated color temperature （CCT）,CRI,special color rendering index （R9） luminous flux,input power,and luminous efficacy of the white light LED cluster predicted by simulation are also very close to the measured values.Furthermore,a white/red cluster with high rendering （CCT=2903 K,CRI=91.3,R9=85） and a color temperature tunable warm-white/red/green/blule LED cluster with high rendering （CCT=2700 6500 K,CRI 〉 90,R9 〉 96） are created.     

基于Cu掺杂ZnInS和ZnCdS量子点的高显色性白光LED

利用胶体化学方法合成了发光波长可调的Cu掺杂量子点, 其波长范围可从绿光到深红光连续调节.通过将绿光ZnInS :Cu和红光ZnCdS :Cu量子点与蓝光GaN芯片相结合, 制备了高显色性的白光LED, 其流明效率为71 lm·W^-1, 色温为4 788 K, 显色指数高达94, CIE色坐标为(0.352 4, 0.365 1).通过测量Cu掺杂量子点的荧光衰减曲线, 发现不存在从绿光ZnInS :Cu到红光ZnCdS :Cu量子点的能量传递过程, 因为红光ZnCdS :Cu量子点在绿光波段没有吸收. 实验结果表明, Cu掺杂量子点有望应用于固态照明领域.     

Color-converted remote phosphor prototype of multiwavelength excitable borosilicate glass for white light-emitting diodes

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited by from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit desired red light with an excellent transmission in the wavelength range of 400-700 nm which makes this glass suitable for the color conversion without great cost of luminous power loss. In particular, assembling this glass to commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic "remote-phosphor" color conversion.     

含有量子点的双波长LED的光谱调控

本文通过对含有高In组分量子点的双波长LED进行了模拟计算, 并对器件的能带结构、载流子浓度、复合速率和辐射光谱进行了研究. 通过对器件结构的调整与对比, 发现蓝绿双波长LED的绿光量子阱中加入高In组分量子点后可以拓宽辐射光谱, 使LED光谱具有更高的显色指数, 为实现无荧光粉的白光LED提供指导. 量子点对载流子具有很强的束缚能力, 并且载流子在量子点处具有更短的寿命, 载流子优先在量子点处复合, 量子点处所对应的黄光与量子阱润湿层所对应的绿光的比例随量子点浓度的增大而增大, 载流子浓度较低时以量子点处的黄光辐射为主, 载流子浓度变大后, 量子点复合逐渐达到饱和, 绿光辐射开始占据主导. 对间隔层厚度和间隔层掺杂浓度的调节可以很方便地调控载流子的分布, 从而实现对含有量子点的双波长LED两个活性层辐射速率的调控. 结果表明, 通过对量子点浓度、间隔层厚度、间隔层掺杂浓度的控节可以很好地实现对LED辐射光谱的调控作用. 关键词： GaN 量子点 光谱调控 双波长LED     

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400-700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic "remote-phosphor" color conversion.     

功率型白光LED光学特性退化分析

将GaN基蓝光芯片涂敷YAG荧光粉和透明硅胶制成额定功率为1 W的白光发光二极管(LED),对其施加900mA的电流应力,在老化过程中测量白光LED的主要光学参数,考察其光学特性的退化情况。经过4 200 h的老化,样品光通量退化为初始值的15%~18% 。样品的漏电流明显增大,表明芯片有源区缺陷密度提高,但光谱分布图中蓝光部分的辐射量未减少,仅观察到黄光部分辐射量的减少,推断出YAG荧光粉的转换效率降低。同时,从原理上分析了样品色温逐渐增大,显色指数基本不变的原因,对大功率白光LED在照明领域的应用有一定的借鉴意义。     

White light emitting diodes (LEDs) with good color rendering indices (CRI) and high luminous efficiencies by the encapsulation of mixed and double-deck phosphors

In this paper, white light emitting diodes (LEDs) with good color rendering indices (CRI) and high luminous efficiencies have been fabricated by the encapsulation of mixed and double-deck phosphors. Experimental results revealed that white LEDs with the encapsulation of double-deck phosphors exhibited better CRI and higher luminous efficiencies than those with the encapsulation of mixed phosphors because no secondary excitation took place. The hue, CRI, and luminous efficiencies of white LEDs with double-deck phosphors under 200 mA were CIE_x,y = (0.357, 0.348), 90, and 62.3 lm/W, respectively while the hue, CRI, and luminous efficiencies of white LEDs with mixed phosphors under 200 mA were CIE_x,y = (0.366, 0.354), 89, and 56.5 lm/W, respectively.     

Study of UV excited white light‐emitting diodes for optimization of luminous efficiency and color rendering index

Wavelength down‐converted white‐light sources excited by near ultraviolet light‐emitting diodes require specific phosphor properties in order to generate high‐quality white light (namely, light with good color rendition and stability of color coordinate). Simulation and experimental results are discussed, with particular emphasis on the spectral distribution property of red phosphor required to realize high values of luminous efficiency and color rendition. A peak wavelength of 610 nm and an FWHM of 80 nm for the spectral power distribution were proposed, and co‐doped phosphate materials were synthesized successfully. This can contribute to a white‐light source with a luminous efficiency of 45 lm/W and color rendering index greater than 90 at a color temperature of 5600 K and an operational current of 20 mA. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Trap-state-assisted white light emission from a CdSe nanocrystal integrated hybrid light-emitting diode

This Letter reports on the fabrication of hybrid white-light-emitting diodes made of semiconductor nanocrystals (NCs) integrated on InGaN/GaN LEDs. Using core type and core/shell type CdSe NCs, the white light properties are systematically engineered for white light generation with high color rendering index (CRI). Unlike CdSe/ZnS core/shell NCs, which exhibited a unique narrowband edge emission, core type CdSe NCs offered extended broad emission toward orange/red wavelengths associated with deep trap states. Consequently, the light-emitting properties of the devices showed strong dependence on the type of NCs used, and devices with CdSe NCs offered admirable characteristics, such as Commission Internationale d'Eclairage coordinates of (0.356, 0.330) and a CRI as high as 87.4.     

基于CuInS2/ZnS核壳结构量子点的高光效暖白光LED

采用逐步热注射法合成了用于白光LED的CuInS₂/ZnS(CIS/ZnS)核壳结构量子点.通过调整Cu/In的比率, 在CuInS₂(CIS)量子点的基础上, 合成了发射波长在570~650 nm之间可调的CIS/ZnS量子点.与CIS量子点的低量子产率相比, 具有核壳结构的CIS/ZnS量子点的量子产率达到了78%.通过在黄光荧光粉YAG :Ce³⁺表面旋涂CIS/ZnS量子点的方式制备了暖白光LED器件.在工作电流为10 mA时, 暖白光LED的发光效率达到了244.58 lm/W.由于CIS/ZnS量子点的加入, 所制备的白光LED器件的显色指数达到86.7且发光颜色向暖色调发生了转移, 相应的色坐标为(0.340 6, 0.369 0).