基于KH56O修饰的有机/无机杂化材料电光波导制备

利用溶胶-凝胶法制备了硅烷偶联剂KH560修饰的有机/无机杂化电光材料,分析了KH560的水解缩合的反应机理.对制备好的电光薄膜进行了表面形貌、折射率和电光特性的表征,并用反射法测量得出了该材料的电光系数为3.5pm/V.针对这种材料柔韧的特性,设计了上加载条形电光波导,并利用Opti-BPM软件模拟了二维和三维光场....     

快速可调谐电光聚合物波导光栅

提出并设计了快速可调谐电光聚合物波导光栅.该波导光栅通过极化聚合物的线性电光效应 可实现谐振波长的纳秒级快速调谐，调谐灵敏度为61pm/V.研究了该波导光栅的反射谱和透 射谱特性与光栅周期,周期数,折射率调制函数及其调制大小的关系.讨论了波导光栅的材料 选择,制备工艺,快速可调谐性和偏振相关性.该波导光栅不仅克服了光纤光栅调谐速度慢和不利于大规模集成的不足，而且具有调谐灵敏度高,制备工艺与半导体工艺兼容和偏振无关 等优点. 关键词： 光通信器件 光波导 电光效应 聚合物 波导光栅 光纤光栅     

M-Z型极化DANS聚合物电光波导强度调制器研究

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺.器件采用DANS (4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构.对五层光波导各层之间的光学、化学以及微加工工艺的相互兼容性进行了深入研究.采用紫外光漂白方法制备出侧壁光滑的条波导,采用钨丝电晕极化方法对DANS聚合物波导进行有效极化,使其具有电光特性.通过优化器件制备工艺,研制出工作波长为1300 nm的M-Z型电光波导强度调制器原型器件.实验测得器件半波电压约为10 V,调制带宽约为1 GHz.     

新型波导阵列电光扫描器特性研究

利用有限差分光束传输法研究了波导耦合对波导阵列电光扫描器传输特性和扫描特性的影响.结果表明：耦合对其传输特性和扫描特性的影响明显;只有在一定条件下,对其影响才较小,可以忽略.由此可知,在设计光波导阵列结构时,考虑波导耦合效应是至关重要的.进一步,提出了描述光波导阵列电光扫描器的技术指标,并研究了该扫描器的结构优化设计问题.     

键合型有机/无机杂化材料加载条形波导电光调制器

相对于普通的有机/无机杂化材料,侧链键合型有机/无机杂化材料能提高生色团的掺杂浓度,避免出现结晶、相分离等现象,同时生色团极化有序性的弛豫因生色团运动受阻而降低,具有较高的热稳定性.本文采用溶胶凝胶法合成了一种性能优良、稳定的侧链键合型有机/无机杂化材料,并将这种材料应用于电光调制器的电光层,利用传统的半导体工艺,采用加载条形波导结构,成功制备了马赫-曾德尔(Mach-Zehnder,M-Z)型电光调制器.测试得到电光调制器在1 550 nm波长下10 kHz的响应信号,为键合型杂化材料应用于光电器件的进一步研究打下了基础.     

聚合物2×2定向耦合型电光开关

设计并制作了一种聚合物2×2定向耦合型电光开关.针对溶胶-凝胶法合成的有机/无机杂化电光材料膜厚较薄的情况,采用一种加载条形波导结构,利用掺有环氧丙脂的聚甲基丙烯酸甲脂-甲基丙烯酸缩水甘油脂作为引导层,在电光薄膜上构成定向耦合器,通过紫外光刻、反应离子刻蚀、电晕极化等工艺,制备了聚合物定向耦合型电光开关,并采用共面波导行波电极以电推挽方式工作.经测试,其器件损耗约为16 dB,开关电压9 V.     

紫外胶在聚合物准矩形电光波导中的应用

基于聚合物材料的波导型电光器件对提升光通信网络的带宽容量具有重要的意义。设计并制备了一种基于有机/无机杂化非线性材料的准矩形聚合物电光波导,采用SiO2作为下包层,紫外胶SU-8作为引导芯层,掺有生色团DR1的有机/无机杂化非线性材料DR1/SiO2-TiO2作为电光层,通过优化感应耦合等离子体刻蚀工艺的天线功率、偏置功率和氧气流量,将SU-8同时作为引导芯层和刻蚀工艺的掩模,制备了准矩形电光波导。实验测得波导传输损耗为-3.5 dB/cm。     

有机/无机复合功能材料倒脊型波导热光开关

利用溶胶-凝胶技术自主合成了一种具有优良光学特性和高热稳定性的有机/无机复合芯层材料.这种功能材料的分子中含有有机柔性侧链,可形成环氧交联.与无机SiO2-TiO2体系相比,具有较高的热光系数（量级为10－4/K）,以及更好的成膜性和可加工性.通过与实验室自行配制的P(MMA-GMA)包层材料相匹配,设计制备了基于这种有机/无机复合功能材料的倒脊型波导马赫-曾德尔型热光开关.器件的波导与热电极性能良好.插入损耗为10 dB,驱动功率15 mW,开关时间小于1 ms,消光比15 dB.     

晶体材料电光系数和压电系数的同时测量

利用双面金属包覆波导结构激发的高阶导模是导波层折射率的灵敏函数这一特性提出了一种测量非线性材料电光系数和压电系数的新方法. 该方法利用反射率曲线在不同电压下的移动参量可以直接计算出被测样品的电光系数和压电系数. 理论与实验研究表明, 该方法具有结构紧凑、插入损耗小、整个装置无运动部件、可靠性能高等诸多优点. 预计这一研究在应用压电效应和电光效应制备光电子器件的诸多领域中有极其广泛的应用前景.     

晶体材料电光系数和压电系数的同时测量

利用双面金属包覆波导结构激发的高阶导模是导波层折射率的灵敏函数这一特性提出了一种测量非线性材料电光系数和压电系数的新方法.该方法利用反射率曲线在不同电压下的移动参量可以直接计算出被测样品的电光系数和压电系数.理论与实验研究表明,该方法具有结构紧凑、插入损耗小、整个装置无运动部件、可靠性能高等诸多优点.预计这一研究在应用压电效应和电光效应制备光电子器件的诸多领域中有极其广泛的应用前景.     

Three-dimensional athermal waveguide at 1.3 μm wavelength for temperature independent lightwave devices

To eliminate the temperature dependence of narrow-band filter, a three-dimensional athermal waveguide of which optical path length is independent of temperature was developed at 1.3 μm wavelength. The temperature coefficient of the refractive index of films made of glass materials was measured at this wavelength, and a strip-loaded athermal waveguide was designed using a scalar finite element method. The temperature coefficient of optical path length was successfully decreased to 9.65X10^-9[/K] (0.1% of the conventional waveguide).     

Polarisation-insensitive strip-loaded waveguide for electro-optic modulators and switches

A polarisation-insensitive electro-optic (EO) waveguide consisting of a dye-doped TiO₂/SiO₂ slab and a SU-8 strip-loaded rib is designed and fabricated. By optimizing the refractive index and size of waveguide, a trade-off between polarisation-insensitive condition and large EO efficiency (optical field interaction with the EO material) is obtained. The average transmission loss of the waveguide is less than 2.0 dB/cm. A Mach-Zehnder (M-Z) interferometer intensity modulator based on this waveguide with excellent poling stability is fabricated and measured, exhibiting 7 V half-wave voltage with 1.8 cm EO interaction length and 2.7 cm total length. This strip-loaded structure is proved to be a valuable application in EO modulators and switches.     

Investigations of the E-O behavior in the poled polymer waveguide

The electro-optic (E-O) properties of the slab polymer waveguide induced by electric poling have been studied experimentally. The thin film waveguide was prepared by a synthesized polymer polypelargonamide and poled by applying voltage between the electrodes. I–V curves and E-O characteristics of the polymer films were in-situ measured during poling. In order to evaluate the molecular dipole orientation under the poling field, the absorption spectra of this film was observed by FTIR. The E-O performance of the polymer slab film was also estimated by the Mach–Zehnder interferometer.     

Effective in-device r33 of 735 pm/V on electro-optic polymer infiltrated silicon photonic crystal slot waveguides

We design and fabricate a 320?nm slot for an electro-optic (E-O) polymer infiltrated silicon photonic crystal waveguide. Because of the large slot width, the poling efficiency of the infiltrated E-O polymer (AJCKL1/amorphous polycarbonate) is significantly improved. When coupled with the slow light effect from the silicon photonic crystal waveguide, an effective in-device r(33) of 735?pm/V, which to our knowledge is a record high, is demonstrated, which is ten times higher than the E-O coefficient achieved in thin film material. Because of this ultrahigh E-O efficiency, the V(π)L of the device is only 0.44?V?mm, which is to our knowledge the best result of all E-O polymer modulators.     

Analysis of rectangular-core waveguide structures and directional couplers by an iterated moment method

Using an iterated moment method (weighted index method), formulae are derived for the accurate calculation of the dispersion characteristics and field distributions of guided modes in strip dielectric waveguides and strip-loaded waveguides, and for the calculation of the coupling length of rectangular-core dual-channel directional couplers. The formulae are simple and the results obtained by the present analysis agree well with computer-aided exact numerical analysis. This method can be readily extended to the analysis of other dielectric waveguide structures.     

A novel electrode structure with a reverse-biased p⿿n diode for high speed polymer-infiltrated slot modulators

This paper demonstrates an alternative electrode structure for low power optical modulation based on a slotted waveguide geometry filled with E-O polymers. A reverse-biased p?n junction is constructed inside the slot waveguide for apply modulation voltage. With this structure, the fabrication tolerance of the slot based E-O modulator should be more flexible. Analysis shows that the modulation speed of our design is comparable with the through-etched slot modulator, at the level of picoseconds.     

Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides

In view of applications of SiO_xN_y thin films in MOEMS technology, a study of the optomechanical characteristics of the PECVD deposited material are investigated. To optimize the quality of SiO_xN_y layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiO_xN_y thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiO_xN_y that offer a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure.     

Growth of active Nd-doped YAP thin-film waveguides by laser ablation

3 (YAP) thin films as a promising material for application in a planar waveguide laser has been studied. The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambient oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were investigated. The waveguiding properties were observed and refractive index of the films was evaluated. Received: 8 February 1998/Accepted: 9 February 1998     

A High Performance Terahertz Waveguide Detector Based on a Low-Barrier Diode

A Schottky barrier diode with low-barrier is presented,based on which a terahertz waveguide detector working at500-600 GHz is designed and fabricated.By using the InGaAs/InP material system,the feature of the low barrier is obtained which greatly improves the performance of the detector.The measured typical voltage responsivity is about 900 V/W at 500-560 GHz and is about 400 V/W at 560-600 GHz.The proposed broadband waveguide detector has the characteristics of simple structure,compact size,low cost and high performance,and can be used in a variety of applications such as imaging,molecular spectroscopy and atmospheric remote sensing.