单晶硅表面金字塔生长过程的实验研究

在普通碱液中添加一种特殊的添加剂,在不同时间下对单晶硅表面进行刻蚀.用扫描电子显微镜观察样品表面形貌,结果显示：单晶硅片放入加入添加剂2mL的刻蚀液中,经过10min刻蚀后晶体表面零星出现大小不一的金字塔,并有大面积的平滑区|刻蚀15min后金字塔大小趋向一致,平滑区面积缩小|刻蚀20min硅片表面形成平均尺寸为2～4μm金字塔绒面结构,并且均匀性好、覆盖率高|刻蚀25min后,进入过腐蚀阶段,金字塔出现变大的现象.研究表明：与传统碱腐蚀相比,添加剂可以缩短单晶硅刻蚀时间,并获得较为理想的绒面结构,在工业上应用可以降低生产成本和生产时间,提高生产率.     

新型添加剂对单晶硅表面金字塔形貌的影响

单晶硅表面微结构对晶体硅光电转换性能有非常重要的影响, 晶体硅表面微结构的调节技术一直是半导体、 太阳能电池领域研究的热点之一.利用碱液与单晶硅异向腐蚀特性的刻蚀技术, 在单晶硅表面可以获得布满金字塔的绒面, 但普通碱液刻蚀的绒面, 其金字塔大小、 形貌和分布随机性大, 不利于提高硅太阳电池的转换效率.在普通的碱腐蚀液中加入不同量的特种添加剂, 然后在相同的温度、 时间下刻蚀单晶硅表面, 通过观察样品表面SEM图, 发现在普通碱液中加入适量添加剂后刻蚀的单晶硅表面能形成均匀密集分布金字塔, 金字塔大小在2—4μupm 之间, 棱边圆滑, 表面金字塔覆盖率高; 用积分反射仪测量了样品的反射率曲线, 发现样品平均反射率下降到12.51%.实验结果表明, 在普通碱液中加入特种添加剂, 能控制单晶硅表面金字塔的大小和分布.     

新型添加剂对单晶硅表面金字塔形貌的影响

单晶硅表面微结构对晶体硅光电转换性能有非常重要的影响, 晶体硅表面微结构的调节技术一直是半导体、 太阳能电池领域研究的热点之一.利用碱液与单晶硅异向腐蚀特性的刻蚀技术, 在单晶硅表面可以获得布满金字塔的绒面, 但普通碱液刻蚀的绒面, 其金字塔大小、 形貌和分布随机性大, 不利于提高硅太阳电池的转换效率.在普通的碱腐蚀液中加入不同量的特种添加剂, 然后在相同的温度、 时间下刻蚀单晶硅表面, 通过观察样品表面SEM图, 发现在普通碱液中加入适量添加剂后刻蚀的单晶硅表面能形成均匀密集分布金字塔, 金字塔大小在2     

单晶硅表面均匀小尺寸金字塔制备及其特性研究

表面织构是一种通过有效的光俘获增加短路电流从而提高太阳电池效率的主要途径之一.在加入间隙式超声和NaClO添加剂的碱性四甲基氢氧化铵(TMAH)溶液中对单晶硅表面进行织构化处理,研究超声与NaClO在织构过程中对金字塔成核和生长的影响,以及金字塔大小对高温工艺之后的单晶硅少子寿命的影响.研究表明,通过在织构溶液中加入间隙式超声控制气泡停留在硅片表面的时间和脱离硅片表面速度,增强了小尺寸金字塔的均匀分布.织构之后硅片在AM1.5G光谱下的加权平均反射率能够达到12.4%,在高温扩散和氧化之后少子寿命的大小与金字塔大小之间存在近似于指数衰减函数的关系.关键词：表面织构化反射率少子寿命单晶硅太阳电池     

纳米粒子与单晶硅表面碰撞的反弹机理研究

应用分子动力学方法模拟了纳米粒子与单晶硅(001)表面碰撞、反弹飞离的现象,分析了粒子的反弹行为、基体弹性形变和塑性形变的原子构型特征,以及碰撞过程的能量转化.碰撞后单晶硅表面形成半球形的小坑,小坑周围的基体原子呈非晶态.碰撞过程中与颗粒相邻的基体原子立即非晶化,在非晶层外面基体以可恢复的(111)［110］滑移结构存储弹性形变能.在射入过程,基体发生压缩弹性形变;颗粒反弹时基体势能振荡下降,交替形成压缩形变构型和拉伸形变构型.射入过程中存贮的压缩弹性形变能的释放为颗粒提供了反弹、飞离的能量.关键词：碰撞纳米粒子单晶硅表面分子动力学模拟     

纳米粒子碰撞下的单晶硅表面非晶相变

应用分子动力学模拟研究了在纳米粒子的碰撞作用下,单晶硅表面局部区域的物相转变和结构演变. 模拟表明在碰撞过程中,基体表面碰撞区域从初始的单晶体转变为熔融态,经历过冷液体状态之后凝固成为了非晶态. 模拟揭示的凝固转变温度与硅玻璃化温度很接近. 在颗粒反弹阶段,与发生的冷却过程和压力去除过程相一致,碰撞区域从瞬态的、高度无序、高度致密的过冷状态开始,经历了结构有序度的增加和向相对疏松状态的转变. 碰撞之后所得非晶硅的平均配位数为5.27,其中配位数5,6原子构成了碰撞区域原子总数的61.5%.     

单脉冲纳秒激光诱导硅表面微结构

利用Nd:YAG纳秒脉冲激光(波长532 nm)在空气中对单晶硅表面进行单脉冲辐照,研究了激光能量密度和光斑面积变化对微结构的影响。通过场发射扫描电子显微镜和原子力显微镜(AFM)对样品表征,并对纳秒激光辐照硅的热力学过程进行分析。结果显示：当脉冲激光的能量密度接近硅的熔融阈值且光斑直径小于8 m时,形成尖峰微结构;随着能量密度或光斑面积增大,尖峰结构消失,形成边缘隆起和弹坑微结构。通过流体动力学模型得到微结构形貌的解析解,模拟得到的微结构形貌与实验测得的AFM数据一致。研究表明微结构的形成主要是由于表面张力引起的熔融硅流动。表面张力与表面温度和表面活性剂的质量浓度有关。温度梯度引起的热毛细流作用和表面活性剂浓度引起的毛细作用共同影响下形成尖峰、边缘隆起和弹坑微结构。     

纳秒紫外重复脉冲激光烧蚀单晶硅的热力学过程研究

采用波长为355 nm的纳秒紫外重复脉冲激光对单晶硅片进行了盲孔加工实验, 观测了随脉冲增加激光烧蚀硅片的外观形貌和盲孔孔深、孔径的变化规律, 并对紫外激光辐照硅片的热力学过程进行了分析. 研究结果表明:紫外激光加工硅盲孔是基于热、力效应共同作用的结果, 热效应会使得硅材料熔化、气化甚至发生电离产生激光等离子体,为材料的去除提供条件;激光等离子体冲击波以及高温气态物向外膨胀会对熔化材料产生压力致使其向外喷射,为重复脉冲的进一步烧蚀提供了条件;力效应主要沿着激光传输的方向,垂直于硅表面,使得去除部位主要集中在孔的深度方向,达到较高的孔径比,实验观察孔径比可达8:1;此外,激光等离子体的产生也阻止了激光对靶面的作用,加之随孔深的增加激光发生散焦,使得烧蚀深度有一定的限制,实验观察烧蚀脉冲个数在前100个时加工效率较高.     

单晶硅太阳能电池伏安特性研究

针对太阳能电池教学过程中存在原理不清、参数不明等问题,从光电转化原理出发,对单晶硅电池的暗伏安特性、填充因子、光电转化效率进行系统分析。通过作图及计算标定了单晶硅太阳能电池相关参数。为太阳能实验的教学提供相应理论和实验指导。     

单晶硅片中的位错在快速热处理过程中的滑移

研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为.研究表明: 在快速热处理时, 位错在压痕残余应力的弛豫过程中能发生快速滑移; 当快速热处理温度高于1100℃时, 在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离. 我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错, 增加了位错的临界滑移应力, 从而在相当程度上抑制了位错的滑移. 可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度.关键词：快速热处理位错滑移机械性能单晶硅     

Growth,optical and electrical studies of the nonlinear optical crystal: Glycine thiourea

Single crystals of the nonlinear optical material glycine thiourea were grown by the slow evaporation technique. The crystal structure and lattice parameters were determined for the grown crystal by the single crystal X-ray diffraction studies. Single crystal XRD revealed that the material crystallized in a monoclinic crystal system. Optical studies have been carried out and it was found that the tendency of transmission observed from the specimen with respect to the wavelength of light, is practically more suitable for opto-electronic applications. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies, to analyze the electrical properties. The photoconductive behavior of the material is also investigated and the results are discussed.     

Magnetocaloric effect, magnetic domain structure and spin-reorientation transitions in HoCo5 single crystals

A study on the magnetocaloric effect (MCE) has been carried out on the HoCo₅ single crystal using a direct method in the temperature range 78-300 K and in a magnetic field of 1.3 T at various orientations of the single crystal with respect to the direction of external magnetic field. Our research has shown that magnetic anisotropy strongly affects magnitude and sign of the MCE in the regions of spin-reorientation phase transitions. In addition, the magnetic domain structure of the HoCo₅ single crystal in (0 0 1) plane in the temperature range from room temperature down to 4.2 K was investigated.     

Studies on the optical and dielectric properties of a zinc thiourea chloride NLO single crystal

Single crystals of a nonlinear optical material, zinc thiourea chloride were grown by the slow evaporation technique. The crystal structure and lattice parameters of the grown crystal were determined by the single crystal X-ray diffraction studies. The single crystal XRD revealed that the material crystallized in a orthorhombic crystal system. Optical studies were carried out and it was found that the tendency of transmission observed from the specimen, with respect to the wavelength of light, is practically more suitable for opto-electronic applications. The optical band gap is found to be 4.30 eV. Optical constants such as the band gap, refractive index, reflectance, extinction coefficient and real (?_r) and imaginary (?_i) components of the dielectric constant and electric susceptibility were determined from the UV–vis–NIR spectrum. The dielectric constant and dielectric loss of zinc thiourea chloride were measured in the different frequency range from 50 Hz to 5 MHz at different temperatures. Further, electronic properties, such as valence electron plasma energy, Penn gap, Fermi energy and electronic polarizability of the grown crystal have been estimated.     

Crystal growth,spectral, thermal and optical properties of an organic single crystal – Dye doped hippuric acid

A new organic dye doped hippuric acid (DHA) single crystals have been grown from aqueous solution of acetone by doping with rhodamine using slow evaporation technique. Rhodamine is a dye, an organic molecule well-studied in laser physics and nonlinear optics for its fluorescent properties. Dyeing of crystals is a practice that was developed particularly for quantum optical applications because of the very significant increase in surface area achieved in growing crystals. In the present work, The DHA single crystals were successfully grown by the slow evaporation method. Good quality single crystals were harvested after 5 days. The grown crystal was characterized by various techniques namely Single crystal X-ray diffraction, FT-IR, UV–vis, NLO and thermal analysis. The FT-IR analysis confirms the presence of various functional groups available in DHA. The optical transmission study and Kurtz and Perry SHG measurement shows the suitability of doped crystals for NLO applications.     

Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

Optical properties of a Ho-doped LaF₃ single crystal have been detailed investigated as a promising material for 2 μm and 2.9 μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ω_t(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the ⁵I₇ → ⁵I₈ and ⁵I₆ → ⁵I₇ transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2 μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF₃ crystal shows long fluorescence lifetime of ⁵I₇ manifold (25.81 ms) as well as ⁵I₆ manifold (10.37 ms) compared with other Ho³⁺-doped crystals. It can be proposed that the Ho:LaF₃ crystal may be a promising material for 2 μm and 2.9 μm laser applications.