基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55μm波长附近的消光比为22.1 dB.通过对微...     

一种可调谐的单微环三耦合点的SOI微环滤波器

依据耦合模和传输矩阵理论,设计了一个新型单微环三耦合点的可调谐微环滤波器模型,并模拟仿真了输出端口的光谱特性。模型结构中,采用热光性质稳定的绝缘硅材料,通过改变反馈波导的长度和温度实现对输出光谱的分析与调制。仿真结果表明,当耦合系数k=0.018时,模型结构的自由光谱范围可近似认为达到43.8nm,品质因子可达1.25×105,作为滤波器保持了很窄的带宽,很高的品质因子和较大的自由光谱范围,得出通过改变反馈波导的温度或长度可实现特定谐振波长处滤波效果显著改善的结论,最后给出了相应的光谱曲线。     

一种热光可调谐级联微环滤波器的理论分析

根据Vernier效应可大幅度提高滤波器自由光谱范围和调谐范围,设计了一种热光可调谐级联微环滤波器. 利用传输矩阵方法和有限元方法从理论上计算了对于第一级微环半径为48 μm,第二级半径为50 μm的级联微环滤波器的自由光谱范围和调谐范围可以达到75.6 nm,而功耗仅为103.1 mW,这是目前为止我们 所知的基于微环谐振腔的硅基热光可调谐滤波器中最大的自由光谱范围和在如此低功耗下最大的调谐范围. 利用有限元方法,还计算了半径为50 μm微环的热光调谐响应时间,上升沿时间为3.5 μs,下降沿时间仅为0.8 μs.     

网格结构微环谐振电光开关阵列的特性分析

设计了由N+1条水平通道、N条竖直通道和2 N个微环构成的电光开关阵列器件,并对其传输特性进行了分析.通过在列微环上加载不同的工作电压,实现相应通道的开关功能.以5×4通道8微环结构为例,取波导芯的宽度与厚度均为1.5μm,波导芯与电极之间的限制层厚度为2.0μm,电极厚度为0.05μm,微环与通道之间的耦合距离为0.1μm.当开关电压为8V时,该器件的插入损耗在2.79～4.31dB范围内,串扰在-20dB以下,消光比在12.5dB以上.     

聚合物微环谐振波分复用器传输特性的理论分析

根据耦合模理论,给出了1×N信道微环谐振波分复用器(MRRWM)的光强传递函数通用公式,并分析了微环谐振波分复用器的传输特性。利用参量优化结果,在中心工作波长约为 1.55μm、波长间隔约 5.6 nm的情况下,对1×8信道硅基聚合物微环谐振波分复用器进行了数值模拟。计算结果表明,该器件具有以下优良的性能:分波光谱准确,自由光谱区约为18 nm,对于半径10μm以上的微环弯曲损耗很小,且器件的插入损耗主要由波导的传输损耗决定,振幅耦合比率为0.2时对应的每条竖直输出信道的插入损耗在0.57 dB以下,信道间的串扰小于-18.5 dB,输出谐振峰3 dB带宽可达0.25 nm,最小背景光的强度约为3.8×10-4。     

可调谐光纤环滤波器

本文提出了一种利用相位调制器和光纤环的可调谐滤波器,运用部分相干光理论分析得到滤波因子,分析了诸滤波器性质,介绍了调谐试验结果.     

基于开口环的可调谐滤波器及其电磁带隙

基于开口谐振环上加载变容二极管设计可调谐滤波器,很好地实现了电磁波带隙的可调.在单环开口谐振环缝隙处或者双环开口谐振环的两环之间加载变容二极管,改变加载变容管上得的电压,改变该结构的分布参量而达到滤波器可调性能.同时通过数值计算分析了该滤波器结构对电磁波的频率响应函数,指出其形成电磁波带隙的物理机制,为了消除开口谐振环的磁谐振效应而关闭开口谐振环的缝隙实验进行了验证.研究表明基于变容管开口环的可调谐滤波器所形成的电磁波带隙中,有的带隙是源于磁谐振机制.有的带隙是源于电谐振机制.对该滤波器形成带隙物理机制的研究,可以更好地理解开口谐振环,有助于其在光学和微波波段器件的设计.     

基于硅基微环的光双二进制

基于硅基微环光调制器,利用Optisystem协同Matlab仿真,实现了10Gbit/s光双二进制信号的产生,并分析了光源的线宽和中心波长、光纤传输距离以及高斯窄带滤波器的带宽对10Gbit/s光双二进制系统性能的影响.仿真结果表明:该光双二进制系统对光源的线宽和中心波长敏感;在误码率为10-9量级时,实现无误码传输的最大距离为60km,且高斯窄带滤波器的最佳带宽为8GHz.     

利用EastFDTD研究基于金属谐振环的新型滤波器

基于金属表面等离子体空间局域非辐射特性,利用电磁场仿真软件EastFDTD和时域有限差分法(FDTD)设计了一种新型滤波器。通过金属谐振环结构中内径分别为175 nm和145 nm金属环对谐振波长的调控作用,在中红外波段不同端口实现了分别输出1.85μm和1.58μm波长的信号,相邻端口之间的串扰可以达到-19 dB,同时输出端口的结构尺寸仅为50 nm。计算结果表明该新型滤波器在滤波性能和器件小型化集成化方面均具有显著优势。     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器(英文)

设计和分析了一种基于SOI(绝缘体上的硅)脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

SOI波导反射模式的古斯-汉欣空间位移效应及其数字式热光开关

借助波导转角镜结构,利用古斯-汉欣空间位移和热光效应折射率调制的有效组合,提出了波导反射模式数字式热光开关结构.在给定入射角的条件下优化了空间古斯-汉欣位移,在具有古斯-汉欣效应的本征态下,反射光束出现了较大的跳跃.在1.0μm厚硅膜的绝缘体上硅平台上,单模输入波导和多模干涉波导结构之间的导模本征态匹配,验证了1×3数...     

The thermo-optical variable optical attenuator based on SOI

A thermo-optical variable optical attenuator was studied based on silicon on insulator (SOI) substrate waveguide. It is composed by the single-mode waveguide, taper waveguide, multi-mode waveguide, and inclined electrode. By adjusting the applied voltage on the inclined electrode it can achieve continuously variable attenuation of the output light. The results we studied show that when the applied voltage is about 4.7 V (the corresponding power is 233 mW), the variation of the waveguide's core temperature is about 33 °C, the refractive index changes more than 5.0 × 10⁻³ and the attenuation will reach 35 dB, and the response time is only 35 μs.     

Design of thermo-optic tunable optical filter based on Si/Air DBR and polymer Fabry–Perot microcavity in SOI

An integrated tunable optical filter (TOF) based on thermo-optic effect in silicon on insulator (SOI) rib waveguide is designed and simulated. The device is comprised of two high refractivity contrast Si/Air stacks, functioning as high reflectivity of DBRs (distributed Bragg reflectors) and separating by a variable refractive index polymer Fabry–Perot (F–P) cavity. The designed device exhibits Q = 24077, FWHM = 0.065 nm and finesse = 566. Wavelength tuning is achieved through thermal modulation of refractive variation of the cavity. As the cavity polymer is heated, the refractive index of the cavity decreases. When the temperature of cavity polymer changes within 105, the central wavelength gets a continuous 35 nm shift from 1530 nm to 1565 nm, which can operate the whole C-band in the WDM (wavelength division multiplexing) networks. Moreover, by calculating, the tuning sensitivity is about 0.33 nm/°C. Owing to the compact size and excellent characteristics of integration, the proposed component has a promising utilization in spectroscopy and optical communication.     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器

设计和分析了一种基于SOI（绝缘体上的硅）脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

DQPSK demodulation using integrated silicon microring resonators

In this paper, we fabricate an ultra-small 20 Gb/s differential quadrature phase-shift keying (DQPSK) demodulator using silicon based microring resonators and show that the separation between the microring resonance and optical carrier can be tuned for DQPSK demodulation at different bit rates. The double-waveguide microring resonators enable detection of I (in phase) and Q (quadrature phase) signals as well as inverted I and Q signals simultaneously. Experimental verification is performed for DQPSK demodulation using a single waveguide microring. We generate DQPSK signal in a serial configuration and demodulate the I or Q channel by offsetting the resonance peak. The offset between the resonance and center carrier is adjusted to be 4.87 GHz and the phase shift (phase offset) is calculated to be exactly π/4.     

Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.     

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 μm × 0.34 μm, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 μm, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 ± 0.4 dB coupling loss between the taper fibers and the polished sides of the device.     

Microwave photonic filter with a continuously tunable central frequency using an SOI high-Q microdisk resonator

Utilizing a high-Q microdisk resonator(MDR) on a single silicon-on-insulator(SOI) chip, a compact microwave photonic filter(MPF) with a continuously tunable central frequency is proposed and experimentally demonstrated. Assisted by the optical single side-band(OSSB) modulation, the optical frequency response of the MDR is mapped to the microwave frequency response to form an MPF with a continuously tunable central frequency and a narrow 3-dB bandwidth. In the experiment, using an MDR with a compact size of 20×20 μm2and a high Q factor of 1.07×105, we obtain a compact MPF with a high rejection ratio of about 40 dB, a 3-dB bandwidth of about 2 GHz, and a frequency tuning range larger than12 GHz. Our approach may allow the implementation of very compact, low-cost, low-consumption, and integrated notch MPF in a silicon chip.