光栅光阀器件的结构改进与制作工艺研究

根据光栅光阀的工作原理,在结构上对传统的光栅光阀器件进行了改进,分析了改进后光栅光阀器件的光学特性、结构特性,以及制作工艺流程.改进后的光栅光阀结构中硅基底上设有二氧化硅隔离层,隔离层上沉积无定形硅作为牺牲层,可动梁的材料是氮化硅,固定梁为蒸镀的金属铝层.通过离子刻蚀的方法刻蚀图形,用化学腐蚀方法掏空牺牲层得到所需桥梁状结构.研究表明改进后的器件黑区范围小,驱动电压较低,光学效率较高,具有潜在的应用前景.     

前后光栅周期对于双光栅结构薄膜太阳能电池光俘获效应的影响

本文用时域有限差分法对硅层等效厚度为100 nm的具有不同前后光栅周期的介质/金属双光栅结构薄膜太阳能电池进行了模拟分析,比较了三角形最佳相同与不同周期光栅结构的吸收光谱特性,分析了光栅高度、填充比、硅吸收层厚度对最佳相同和不同周期光栅结构光吸收特性的影响,以及相应结构中导致光吸收增强的共振模式.结果表明前后光栅周期为1:1的共形双光栅结构中存在光泄漏现象,偏离1:1后的光栅结构可有效地抑制低级次衍射光的泄漏,前光栅周期小于后光栅周期的结构光吸收性能的提高来自于平面波导模式在吸收层中的有效激发和传播,而前光栅周期大于后光栅周期的结构光吸收性能的提高则来自于后光栅界面上所激发的等离子体极化模式.在较厚的硅吸收层厚度,前后光栅周期比为1:2和1:3的电池结构也会出现光泄漏现象,从而使具有最大光吸收效率的结构偏离这些周期比结构的位置.     

光栅光阀光学特性分析及其在热敏CTP中的应用

光栅光阀(GLV)是一种衍射MOEMS空间光调制器,利用其对激光束的调制作用,可成功地应用于计算机直接制版(CTP)系统中。提出了简化的光栅光阀光学模型,并根据夫琅和费单缝衍射理论和多光束干涉理论对光栅光阀的光学特性进行了理论分析。介绍了光栅光阀在热敏CTP系统中的应用,分析了光栅光阀光学记录设备的结构和成像原理。得出了基于GLV技术的热敏CTP数字成像过程,为国内印刷企业使用这种热敏成像技术提供了理论依据。     

紫外光刻-湿法刻蚀硅中阶梯光栅的研制

湿法刻蚀技术作为中阶梯光栅的主要制备方法之一，具有制造成本低、周期短、杂光少、所制作光栅的闪耀角误差小等优点。为解决某高分辨率光谱仪在近红外波段（800～1100 nm）的分光需求，尝试选择70.52°槽顶角的湿法刻蚀硅中阶梯光栅来代替90°槽顶角的传统中阶梯光栅。依据（100）硅光栅的结构特点以及光学设计给出的光栅工作条件，利用有限元数值计算法求解电磁场分布，理论分析了硅中阶梯光栅在工作波段内多个级次的衍射特性。在此基础上，利用紫外光刻-湿法刻蚀技术，在单晶硅基底上制作了槽密度为42 lp/mm、闪耀角为54.74°、有效面积超过46 mm×28 mm的对称V形槽光栅，并根据制备实验结果分析讨论了工艺过程中硅光栅质量的重要影响因素。测试结果表明，该光栅在各工作级次对应闪耀波长下的衍射效率均在45%～55%范围内，满足指标要求。     

微纳光栅结构增强聚合物太阳能电池光吸收的研究

基于共轭聚合物给体材料P3HT和富勒烯衍生物受体材料PCBM共混的体异质结结构的聚合物太阳能电池,因其空穴载流子迁移率低而限制了P3HT:PCBM功能层厚度,从而影响了器件对入射光的吸收.在聚合物功能层表面引入微纳光栅结构可以使器件内电场重新分布并改善器件的光吸收.本文基于时域有限差分方法仿真得到了光栅周期为1μm,占空比为0.5以及入射波长分别为500和700 nm时二维器件内光电场分布;并基于严格耦合波分析方法计算得到了不同光栅深度和光栅占空比的器件光吸收.理论分析表明:插入微纳光栅结构后,由于光栅衍射增强作用使器件内出现了光聚焦现象;当占空比为0.5时,光栅深度为10 nm的器件在入射波长为512 nm时,器件光学吸收增加了4.2%.基于聚二甲基硅氧烷的微压印技术,制备了微纳光栅结构聚合物太阳能,器件结构为ITO/PEDOT:PSS光栅层/P3HT:PCBM/LiF/Al.该器件与平板器件的性能对比实验证实,通过在PEDOT:PSS上引入微纳光栅结构,器件能量转化效率增加了31%.     

光电子技术与器件 光调制与器件

TH7612006010547光栅光阀的光学特性分析和仿真=Optical characteristicanalysis and si mulation of grating light valve[刊,中]/张洁(重庆大学光电工程学院光电技术及系统教育部重点实验室.重庆(400030)),黄尚廉…∥光学学报.—2005,25(11).—1452-1456依据多光束干涉理论和衍射理论对光栅光阀工作状态的光学特性进行了详细的理论分析和计算机仿真。结果说明,光栅光阀在工作中处于“开”态时,可动光阀下降的距离应该是入射波长的1/4倍;设计时选择h=λ0/2,δ=λ0/4;当间隙处的反射率不同时,占空比对光栅光阀的光学特性有着不同的影响,给…     

银镜反应制备纳米蛾眼减反结构法

为了降低光学表面的菲涅耳反射,提出了一种制备仿生减反结构的方法.利用银镜反应并结合退火处理在硬性材质基底表面制备银纳米粒子,经反应离子刻蚀工艺,在基底表面形成一层纳米蛾眼减反结构.分析了周期分布和随机分布纳米蛾眼的光学特性,实验研究了退火参量和刻蚀参量对银纳米颗粒直径、密度以及高度的影响,并在硅和石英基底上分别制备了随机减反结构.测试结果表明:硅基平均反射率小于4.5%,双面石英基透过率达98.1%.理论和实验均表明:随机分布的纳米仿生蛾眼结构具有宽光谱、广视角和高减反特性,所提出的制备方法具有简便易行、低成本、大幅面等优点,在光电器件中具有良好的潜在应用前景.     

基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计

选区外延技术是实现有源与无源光器件单片集成的一种有效的工艺手段,但同时对两种器件在异质生长界面处的对接结构提出了更高的设计要求.本文通过选区外延技术实现了InP基O波段4通道阵列波导光栅与单载流子探测器的单片集成.通过光学仿真重点研究了选区外延后界面处形貌对无源波导结构与有源光探测器间光耦合效率的影响,包括伸长的光学匹配层、二次外延生长边界位置、波导刻蚀边界位置等因素.研究结果表明,在保证二次外延生长边界对准异质对接界面时,将光学匹配层伸出探测器前端10μm并与外延边界无缝对接既可以保证高效的光传输效率(或探测器量子效率),又可以避免外延界面处的异常生长对器件制备工艺的影响,保证生长工艺与器件制备工艺的兼容性.成功制备的单片集成芯片具有高达76%的探测器量子效率,证明了对接方案的有效性.同时,集成芯片的低串扰(-22 dB)与解复用特性展示出其作为解复用光接收芯片具有巨大潜力.     

光栅光阀的光学特性分析和仿真

光栅光阀是一种基于微型机电系统（MEMS）工艺的光调制器,利用其表面具有的可选择的变形部分（可动光阀）,提供衍射光栅,被应用于投影显示等领域。光栅光阀的光学性能决定其在投影显示系统中应用的成败。依据多光束干涉理论和衍射理论对光栅光阀工作状态的光学特性进行了详细的理论分析和计算机仿真。结果说明,光栅光阀在工作中处于“开”态时,可动光阀下降的距离应该是入射波长的1／4倍;设计时选择h=λ0／2,δ=Aλ0／4;当间隙处的反射率不同时,占空比对光栅光阀的光学特性有着不同的影响,给出了占空比与反射率的最佳组合值。     

水平腔面发射DFB激光器光栅调控出光特性研究

以面发射分布反馈(SE-DFB)半导体激光器为研究对象，基于耦合模理论，通过耦合系数表征器件的出光特性，研究二阶光栅对器件出光特性的调控作用。使用时域有限差分法(FDTD)进行光栅的结构仿真和参数优化，在器件衬底部位引入分布布拉格反射镜(DBR)协同光栅调控出光特性，以980 nm波段半导体激光器为例，重点研究DFB光栅占空比、DFB光栅周期长度、DFB光栅刻蚀深度、DFB光栅倾角、DBR反射镜占空比、DBR反射镜材料折射率、DBR反射镜周期介质层数对光栅耦合系数的综合影响，得到优化的光栅参数，为后续器件设计与制备提供理论依据。     

Fabrication of freestanding nanoscale gratings on silicon-on-insulator wafer

We report a bottom-up process for the fabrication of freestanding nanoscale gratings on silicon-on-insulator (SOI) wafer. Freestanding membrane devices suffer deflection due to the residual stress of the buried oxide layer of SOI wafer. The deflection will affect the device shape and result in the fracture problem for devices fabricated on thin silicon membrane. The bottom-up process is developed to overcome the fabrication issue for thin silicon membrane gratings. The silicon handle layer is removed through back wafer etching of silicon, where the buried oxide layer acts as an etch stop layer. The grating structures are then defined on thin silicon device layer by electron beam lithography and generated by fast atom beam etching. The grating structures are finally released in vapor HF to form the freestanding nanoscale gratings. The freestanding linear/circular gratings, 1,500-nm period grating with the grating width of 200- and 850-nm period grating with the grating width of 100 nm, are successfully achieved on 260-nm silicon device layer.     

Formation of diffractive microrelief on diamond film surface

The fabrication of diamond-based optical elements for high-power CO₂ lasers is of particular interest because of low optical absorption, high thermal conductivity and weak temperature dependence of the refractive index of diamond. In earlier publications, we presented the results of the implementation of ion-chemical etching technology for generating a diffraction grating on the surface of a diamond film. The results on generating diamond diffractive optical elements and a sub-wavelength antireflection structure by plasma etching were also presented. In this paper, we study the generation of the grating on the diamond surface by ion-chemical etching. The choice of (Ar+O₂) mixture as a working gas and use of niobium as a masking layer are substantiated. The results of studying a diffraction microrelief generated on the diamond-film surface through ion-chemical etching are discussed.     

Laterally deformable nanomechanical zeroth-order gratings: anomalous diffraction studied by rigorous coupled-wave analysis

We describe a novel optomechanical device that produces strong reflectance and polarization modulation of incident light. The structure is based on a suspended nanomechanical grating with lateral deformability, and rigorous coupled-wave analysis has been used to fully model the optical properties of the device. The grating consists of two interdigitated gratings that may be moved with respect to each other with an applied force. The structures proposed here are designed to be readily manufacturable with device processing developed for surface-micromachined microelectromechanical systems and with known microelectromechanical systems materials, such as silicon, silicon nitride, and amorphous diamond. As the spacing of the grating is changed, an anomalous diffraction effect is observed, a Wood's type anomaly in which there exists a resonance in propagating leaky modes within the grating, resulting in a dramatic change in the reflectance characteristics for slight changes in the grating. One of the unique features of this structure is that a reflected optical signal can be used to detect subangstrom in-plane motion of structures greater than 10 nm.     

偏晶向(111)硅片闪耀光栅的制作

硅光栅的制作可以利用湿法腐蚀体硅工艺.湿法腐蚀利用硅的各向异性,由硅的晶面形成光栅工作凹槽,利用湿法工艺可以制作在不同光谱波段内工作的闪耀光栅.设计了一种利用偏晶向(111)硅片制作闪耀光栅的方法,使用这种方法可以批量制作闪耀角度较小的光栅.利用扫描电子显微镜(SEM)进行了光栅表面形貌测试,试验结果表明,制作的硅光栅样片具有良好光学特性的反射表面和光栅槽形.硅闪耀光栅可以被用来制作微型光谱仪、滤光器等微型仪器或器件.     

Design of an augmented reality display based on polarization grating

A new optical system for an augmented reality(AR) display is proposed in this paper.The optical system mainly includes a ray deflector, coupling input grating, optical waveguide, and coupling output grating.Both the ray deflector and the coupling input grating are designed based on the diffraction characteristics of the polarization grating, and the coupling output grating is the Bragg reflection grating.Compared with other AR schemes, this AR optical system not only reduces the number of projections from two to one, but also improves the efficiency of light coupling into the optical waveguides.The energy loss is reduced by utilizing the single-order diffraction characteristics of the polarization grating in its coupling input structure.The light deflector uses the polarization selectivity of the polarization grating and the characteristics of the rotating light of the twisted nematic liquid crystal layer to realize beam deflection.The working principle of the optical system is experimentally and theoretically demonstrated.     

SOI基纳米光栅耦合器的结构改进与仿真验证

针对硅基光波导与单模光纤在光耦合过程中存在耦合效率低,对准难度大的问题,提出了一种新型基于绝缘体上硅(SOI)结构的纳米光栅耦合器。运用有限时域差分法探究了纳米光栅耦合器的结构特性,结合光纤准直器的准直原理,系统分析了纳米光栅耦合器的结构模型。研究了入射光波长、入射角度、光栅占空比等因素对光栅耦合效率的影响,得出了基本纳米光栅耦合器的最佳结构参数;在基本耦合光栅结构的基础上进行了改进,增加了后反射器、增透膜和底层介质膜,并运用Optiwave OptiFDTD 8.0软件优化了各部分结构的设计参数,得到了优化的耦合光栅结构。纳米光栅耦合器的耦合效率提高至59.37%,3dB带宽达到65nm。     

Authentication labels based on guided-mode resonant filters

A guided-mode resonance (GMR) filter with wide angular tolerances is experimentally demonstrated as an authentication label illuminated with unpolarized white light. The proposed filter, based on a free-standing silicon nitride membrane suspended on a silicon substrate, is fabricated by using anisotropic wet etching to remove the substrate beneath the silicon nitride layer. Both grating and waveguide structures without a lower cladding layer, i.e., a substrate, are fabricated simultaneously on a silicon nitride membrane. Since the silicon nitride is transparent within the spectra of visible and infrared light, such suspended-membrane-type GMR filters are well suited for applications within the visible spectrum. Moreover, the high refractive index of silicon nitride allows the proposed filters to have strongly modulated gratings and an immunity to high angular deviation. The measured reflection resonance has an angular tolerance up to +/-5 degrees under normal incidence for the wavelength of 629.5 nm.     

Silicon-based and suspended-membrane-type guided-mode resonance filters with a spectrum-modifying layer design

The concept of a spectrum-modifying layer is proposed for the design of a silicon-based guided-mode resonance filter. To realize such a novel device, a grating and waveguide structures are fabricated simultaneously in a suspended silicon nitride membrane. The cladding layer of the silicon substrate is replaced by the silicon dioxide membrane to reduce the absorption loss of the bulky substrate. Moreover, the silicon dioxide membrane plays a role in modifying the spectral response. According to the experimental results of the proposed structures, symmetrical line shapes and improved sidebands of nonresonance are demonstrated.