多晶硅表面陷阱坑形貌的光学性能模拟

采用COMSOL Multiphysics 3.5a有限元分析软件中的RF模块对3种硅片绒面的陷阱坑形貌(轻度腐蚀、正常腐蚀和过度腐蚀)的光学性能进行了数值模拟.通过求解麦克斯韦方程组和材料本构方程,获得了3种陷阱坑的表面电场z分量、表面磁场y分量和反射率的变化规律.结果表明:当波长为600 nm时,轻度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最小,反射率最高(约为35％);正常腐蚀陷阱坑的表面电场z分量和表面磁场y分量其次,反射率约为17％;过度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最大,反射率最低(约为10％).通过实验和模拟结果对比可知,模拟值和试验值的反射率变化趋势基本一致,两者吻合较好,可为实际生产和试验提供理论参考.     

利用原子芯片上Z形磁阱囚禁中性87Rb原子

利用解析和数值方法计算了Z形磁阱的囚禁势，发现当囚禁中心和芯片表面距离较远时(该距离和Z形线中部导线的一半长度相差不超过一个量级)，势阱的深度不能近似表示成偏置磁场B_y对应的能量，而要减去囚禁中心的势能高度；而增加B_y进行磁阱压缩到一定值时，势阱深度反而会下降.此外介绍了原子芯片的制作方法，以及利用原子芯片上Z形磁阱囚禁中性⁸⁷Rb原子的实验装置和实验过程.最终有2×10⁶个⁸⁷Rb原子被转移到Z形磁阱中.     

近紫外区宽角度消偏振平板分光镜

简要介绍K9玻璃为基板的用金属-介质膜系实现近紫外区宽角度消偏振平板分光镜的设计,设计波长为360～480 nm,空气中的入射角变化范围为45°±6°,膜系的反射率R和透过率T的之比的平均值为63.6%,总损耗约为10%,S偏振分量和P偏振分量的平均偏离约为1%.     

高斯涡旋光束在自由空间传输中电场和磁场的偏振奇点

利用矢量菲涅尔衍射积分公式, 以高斯涡旋光束为例, 推导出傍轴高斯涡旋光束在自由空间传输过程中电场分量和磁场分量的解析表达式, 详细研究了自由空间中电场和磁场的偏振奇点变化规律. 结果表明, 高斯涡旋光束在自由空间传输中, 存在二维和三维电场和磁场的偏振奇点, 其位置一般不重合. 改变光束束腰宽度比、 振幅比以及传输距离, 偏振奇点出现移动. 在二维电场和磁场中, 当满足一定条件时, 会有V点产生.     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.     

镨掺杂对无钴钙钛矿型氧化物BaFeO3-δ电导率和透氧性能的影响

Among the perovskite-type oxides with symmetrical structure applied in oxygen permeable membranes,cubic phase structure is the most favorable for oxygen permeation.In order to stabilize the cubic perovskite structure of BaFeO_3-δ material at room temperature,iron was partially substituted by praseodymium.BaFe_1-yPr_yO_3-δ powders were synthesized by a solid state reaction method,and sintered samples were prepared from the synthesized BaFe_1-yPr_yO_3-δ powders.X-ray diffraction results reveal that the BaFe_1-yPr_yO_3-δ samples remain cubic structure at praseodymium substitution amount of y=0.05,0.075,0.1.Scanning electron microscope observation indicates that the sintered samples contain only a small amount of enclosed pores and the grain size of BaFe_1-yPr_yO_3-δ increase monotonically with the increase of the praseodymium doping amount,praseodymium doping promotes the grain size growth.Tests of electrical conductivity and oxygen permeation flux show that praseodymium doping improves the conduction properties of BaFe_1-yPr_yO_3-δ and BaFe_0.9Pr_0.1O_3-δ composition has an electrical conductivity of 6.5 S/cm and an oxygen permeation of 1.112 mL/(cm²·min) at 900 ℃,respectively.High temperature XRD investigation shows that the crystal structure of BaFe_0.975Pr_0.025O_3-δ membrane completely transform to cubic phase at 700 ℃.The present test results have shown that partially substitution of Fe by praseodymium in BaFeO₃ can stabilize the cubic structure and improve the properties.     

混合应变多量子阱有源材料及其增益偏振特性

采用MOCVD外延交替生长了压应变、张应变In_xGa1-xAs_yP1-y多量子阱材料,对应1.3 μm波段.平均应变量-0.16%,周期11 nm.采用三个周期外延材料的芯片制作的LD,实现了TE和TM双偏振模激射.     

z切LiTaO3单晶的冲击相变研究

利用二级轻气炮加载下的冲击Hugoniot线(冲击波速度D-粒子速度u关系)和粒子速度剖面测量，结合基于密度泛函理论的平面波赝势计算研究了z切LiTaO₃单晶的高压相变.实验发现，D-u关系在u=0.95km/s附近出现明显拐折；实测波剖面中25.9 GPa和32.6 GPa时观测到弹-塑性双波结构，而终态压力为42.7 GPa和53.0 GPa时则为三波结构.上述结果都清楚地表明z切LiTaO₃单晶冲击相变的发生，相变起始压力约为37.9 GPa.同时，理论计算的菱形相(R3c对称群)压缩线与低压实验数据符合较好，而正交相(Pbnm对称群)压缩线则与扣除热压贡献的高压实验数据相符，由此推断z-切LiTaO₃的高压相为正交结构.从实验和理论上澄清了z切LiTaO₃的相变起始压力和高压相晶体结构的认识，研究工作亦对类似单晶材料的冲击相变研究有参考价值.     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高.     

态|Ψ(3)〉q中广义磁场的不等幂次高次振幅压缩

利用多模压缩态理论,研究了一种新型的三态叠加多模叠加态光场|Ψ⁽³⁾〉_q中广义磁场分量(即第一正交相位分量)的不等幂次高次振幅压缩特性.结果表明:态|Ψ⁽³⁾〉_q是一种典型的三态叠加多模非经典光场,其广义磁场分量在一定条件下可呈现出周期性变化的、偶数次的不等幂次高次振幅压缩效应.     

多晶硅不同晶面陷阱坑形貌与陷光效应的关系

提出了多晶硅表面陷阱坑内表面高次绒面的陷光模型。利用测不准原理,分析了光子散射方向与绒面上凸点大小的关系,利用光学傅里叶变换推导了光子逃逸陷阱坑概率与绒面陷阱坑形貌的关系。理论分析结果表明内表面布满凹凸点的U字形陷阱坑反射率比V字形的低;而内表面光滑的U字形陷阱坑的反射率比V字形的高。利用扫描电子显微镜拍摄了碱液刻蚀的多晶硅样品表面图像,分析了碱液刻蚀的不同晶面陷阱坑的形貌。[100]晶面呈峡谷状的陷阱坑,[111]晶面呈扭曲的U字形凹坑,[110]晶面则显示混合结构。实验测量了样品不同晶面的反射率曲线,证实了U字形陷阱坑的绒面具有相对低的反射率,与理论分析结果基本吻合。     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

Experiment and simulation of space charge suppression in LDPE/MgO nanocomposite under external DC electric field

In this paper, space charge dynamics under DC electric field of −100 kV/mm in low-density polyethylene (LDPE) and its nanocomposite containing a small amount of MgO nanoparticles were measured using an improved pulsed electro-acoustic (PEA) system. Unlike negative packet-like space charge accumulating in LDPE films, no remarkable space charge was observed in LDPE/MgO nanocomposite films, which indicated that the introduction of MgO nanoparticles played a key role on the space charge suppression. Different with current qualitative models, this paper describes space charge suppression on the basis of simulation using the bipolar charge transport model, which featured bipolar charges injection, transport, trapping, recombination, and extraction process. It was shown from the simulation that trap depth, trap concentration, local electric field and charge injection barrier height were all significant factors on the space charge suppression process. A deeper trap depth in LDPE/MgO nanocomposites made it easier for traps to capture mobile carriers. And a larger trap concentration effectively slowed down the whole carrier movement although there seemed a trap concentration threshold less than 30 Cm⁻³, above which this effect became slight. In addition, both the high permittivity of LDPE/MgO nanocomposites and low local electric field in the vicinity of cathode led to a larger injection barrier height based on the Schottky injection law, which would tremendously block the charge injection. At last, the suppression mechanism of space charge formation in the LDPE/MgO nanocomposites is presented.     

磁流体动力学磁控进气道流场分布数值模拟

采用磁流体控制的办法能提高超燃冲压发动机的推进性能。结合了Maxwell方程组和描述流体力学规律的Navier-Stokes方程组,并对这些方程进行了简化,建立了适用于计算磁流体动力学(MHD)超燃冲压发动机磁控进气道流场分布的数值模拟模型。研究了在特定工况下,流场特征、电势、电流以及提取功率等参数的变化。磁流体发生器能够降低管道出口马赫数和流向速度,降低出口处的总焓,但是出口处的温度有所提高。在电极上,电势保持常数,而绝缘壁面的电势较高,电场在电极端点出现周期性的极性。y方向电流在电极板附近很高,而在绝缘板上几乎为零。电流主要从正电极流向负电极,而且沿着x方向略有减小。y方向电流最大值出现在绝缘壁面上,而绝缘板上的z方向值几乎为零。z方向电流最大值出现在管道的边角处,而在绝缘壁面上几乎为零,电流在绝缘壁面的法线分量为零。     

多晶硅表面酸腐蚀制备绒面研究

采用各向同性腐蚀法制备多晶硅绒面,腐蚀液为HF和HNO3的混合溶液,缓和剂为NaH2PO4.2H2O溶液.利用SEM、AFM和紫外分光光度计对硅片绒面进行检测和分析,初步探讨了酸腐蚀机理.结果表明:采用NaH2PO4.2H2O溶液作为缓和剂,腐蚀后的硅片表面具有均匀的腐蚀坑,表面陷光效果较好,通过优化各种参量,反应速度可以控制在2 μm/min左右,适合工业生产的要求.在富HF时,硅片表面易形成尖锐边缘的腐蚀坑,出现或多或少的小孔,反射率最低可达16.5%～17.5%|在富HNO3时,硅片表面易形成腐蚀坑较浅、尺寸偏大的气泡状绒面或光面,反射率较高.     

晶体硅太阳电池表面纳米线阵列减反射特性研究

为增强晶体硅太阳电池的光利用率, 提高光电转换效率, 研究了硅纳米线阵列的光学散射性质. 运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算, 用田口方法对硅纳米线阵列的表面传输效率进行了优化. 结果表明, 当硅纳米线阵列的周期为50 nm, 占空比为0.6, 高度约1000 nm时减反射效果最佳; 该结构在上述波段的平均反射率约为2%, 且在较大入射角度范围保持不变. 采用金属催化化学腐蚀法, 于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53, 高度为500 nm的硅纳米线阵列结构, 其反射率的实验测试结果与计算模拟值相符, 在上述波段的平均反射率为4%—5%, 相对于单晶硅35%左右的反射率, 减反射效果明显. 这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失, 提高光电转换效率.     

磁电超材料折射率特性分析

基于麦克斯韦旋度方程, 将磁电超材料板中的电元件和磁元件分别等效为面电流和面磁流, 通过计算这些周期性面电流和面磁流在某个磁电超材料板上产生的总电场和总磁场, 获得了关于面磁流密度和面电流密度的两个方程, 进而推导出了周期性磁电超材料折射率与磁元件的磁导率、 电元件的介电常数和空间色散项之间关系的解析公式. 与传统的折射率计算公式不同, 该解析公式充分考虑到了空间色散以及磁电超材料的电元件和磁元件的相互作用. 折射率理论曲线和基于仿真实验数据的提取值曲线能很好地符合, 这说明文中推导的折射率公式能够正确地描述磁电超材料的负折射特性. 本文的结果将为分析电磁元件之间的相互作用以及设计负折射率符合一定要求的磁电超材料提供重要的理论参考. 关键词： 磁电超材料 周期性结构 负折射率     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.