Correct Evaluation of the Effect of Transverse Effective Charges on Phonons in AlAs Quantum Dots

An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TOs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near Г point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities ofphonon states of d/fferent irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TOs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.     

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current–voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs.     

Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

We have used cross-sectional scanning-tunneling microscopy (X-STM) to compare the formation of self-assembled InAs quantum dots (QDs) and wetting layers on AlAs (1 0 0) and GaAs (1 0 0) surfaces. On AlAs we find a larger QD density and smaller QD size than for QDs grown on GaAs under the same growth conditions (500 °C substrate temperature and 1.9 ML indium deposition). The QDs grown on GaAs show both a normal and a lateral gradient in the indium distribution whereas the QDs grown on AlAs show only a normal gradient. The wetting layers on GaAs and AlAs do not show significant differences in their composition profiles. We suggest that the segregation of the wetting layer is mainly strain-driven, whereas the formation of the QDs is also determined by growth kinetics. We have determined the indium composition of the QDs by fitting it to the measured outward relaxation and lattice constant profile of the cleaved surface using a three-dimensional finite element calculation based on elasticity theory.     

Vibrational spectroscopy of InAs and AlAs quantum dot structures

In this paper we present an experimental comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QDs) by means of infrared and Raman spectroscopies. The first observation of optical phonons localized in InAs and AlAs QDs using infrared spectroscopy is demonstrated. Confined optical phonon frequencies of the QDs measured by means of Raman scattering are compared with those deduced from the analysis of infrared spectra performed in the framework of the dielectric function approximation.     

Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot

We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.     

Resonant Raman scattering from CdTe/ZnTe self-assembled quantum dot structures

We report resonant Raman scattering results of CdTe/ZnTe self-assembled quantum dot (QD) structures. Photoluminescence spectra reveal that the band gap energies of the CdTe QDs decrease with the increase of CdTe thickness from 2.0 to 3.5 monolayers, which indicates that the size of the QDs increases. When the CdTe/ZnTe QD structures are excited by non-resonant excitation, a longitudinal optical (LO) phonon response from the ZnTe barrier material is observed at 206 cm⁻¹. In contrast, when the CdTe/ZnTe QD structures are resonantly excited near the band gap energy of the QDs, additional phonon modes emerge at 167 and 200 cm⁻¹, while the ZnTe LO phonon response completely disappears. The 167 cm⁻¹ mode corresponds to the LO phonon of the CdTe QDs. A spatially resolved Raman scattering from the cleaved edge of the QD sample reveals that the 200 cm⁻¹ mode is strongly localized at the interface between the CdTe QDs and ZnTe cap layer. This phonon mode is attributed to the interface optical (IO) phonon. The analytically calculated value of the IO phonon energy using a dielectric continuum approach, assuming a spherical dot boundary, agrees well with the experimental value.     

量子点中磁激子的极化子效应

采用推广的LLP方法研究了自组织量子点中磁激子的极化子效应。考虑带电粒子和声子的相互作用,得到了激子能量随磁场的变化关系。结果表明,激子-声子的相互作用降低了激子的能量,但影响很小;极化子效应在没有外磁场时较明显,随着外磁场的增加,这种效应变得越来越弱。     

Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots

The spectra of Raman scattering by folded acoustic phonons in Si/Ge superlattices with pseudomorphic layers of Ge quantum dots (QDs) grown by low-temperature (T = 250°C) molecular beam epitaxy are studied. New features of the folded phonon lines related to the resonant enhancement and unusual intensity ratio of the doublet lines that cannot be explained by the existing theory have been observed. The observed modes are shown to be related to the vibrations localized to the QDs and induced by the folded phonons of the Si spacer layers. The calculations performed in the model of a one-dimensional chain of atoms have allowed the nature of the localization of acoustic phonons attributable to a modification of the phonon spectrum of a thin QD layer to be explained. The observed intensity ratio of the folded phonon doublet lines is caused by asymmetry of the relief of the QD layers.     

金纳米颗粒光散射提高InAs单量子点荧光提取效率

采用光学方法确定InAs/GaAs单量子点在样品外延面上的位置坐标, 利用AlAs牺牲层把含有量子点的GaAs层剥离并放置在含有金纳米颗粒或平整金膜上, 研究量子点周围环境不同对量子点自发辐射寿命及发光提取效率的影响. 实验结果显示, 剥离前后量子点发光寿命的变化小于13%, 含有金纳米颗粒的量子点发光强度是剥离前的7倍, 含有金属薄膜的量子点发光强度是剥离前的2倍. 分析表明在金纳米颗粒膜上的量子点荧光强度的增加主要来自于金纳米颗粒对量子点荧光的散射效应, 从而提高量子点发光的提取效率.     

Structural and optical properties of high-density (>10/cm) InAs QDs with varying Al(Ga)As matrix layer thickness

We have obtained high-density (>10¹¹/cm²) InAs quantum dot (QD) structures by using an Al(Ga)As matrix layer. With increase of the AlAs matrix layer thickness, the density of QDs increases a little and the luminescence intensity emitted from InAs QDs decreases. We have used a thin GaAs insertion layer (IL) for the reason of keeping InAs QDs from an aluminum intermixing towards QDs. As the thickness of GaAs IL increases, the density of QDs decreases slightly due to the reduction of the roughness of an AlAs matrix layer. However, the luminescence intensity increases with increase in the thickness of GaAs IL resulting from the efficient blocking of an aluminum intermixing towards QDs.     

Interatomic force constants and lattice vibrations of AlP,AlAs and AlSb

The interatomic force constants and the phonon dispersion curves of AlP, AlAs, and AlSb are obtained from the electronic theory of solids by using our presented binding force, which includes mainly covalent interactions in the pseudopotential formalism and partially ionic interactions. The potential-parameter, effective ionic charge and ionic fraction of AlP and AlAs are estimated from those of AlSb and other III–V tetrahedrally- bonded compounds in spite of no experimental information on the band- calculation and the neutron scattering data of AlP and AlAs. Numerical data for the crystal energy of AlP and AlAs are in good agreement with the observed data, and the obtained results for the phonon dispersion curves and bulk modulus are useful to study the lattice dynamics and anharmonic properties of these compounds.     

Interface and propagating optical phonon mixing modes in a wurtzite GaN-based quantum dot

The polar optical phonon vibrating modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) are solved exactly based on the dielectric continuum model and Loudon’s uniaxial crystal model. The result shows that there exist four types of polar mixing optical phonon modes in the Q0D wurtzite cylindrical QD systems, which is obviously different from the situation in blende cylindrical QDs. The dispersive equations for the interface-optical-propagating (IO-PR) mixing modes are deduced and discussed. It is found that the dispersive frequency of IO-PR mixing modes in wurtzite QD just take a series of discrete values due to the three-dimensional confined properties. Moreover, once the radius or the height of the QD approach infinity, the dispersive equations of the IO-PR mixing modes in the wurtzite Q0D cylindrical QD can naturally reduce to those of the IO and PR modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both physical and mathematical viewpoints. The analytical expressions obtained in the paper are useful for further investigating phonon influence on physical properties of the wurtzite Q0D QD systems.     

Influence of the quantum dot shape on the determination of the electronic structure and electron decoherence

Theoretical calculations of electron–phonon scattering rates in AlGaN/GaN quantum dots (QDs) have been performed by means of effective mass approximation in the frame of finite element method. The influence of a symmetry breaking of the carrier's wave function on the electron dephasing time is investigated for various QDs shapes. In a QD system the electron energy increases when the QD shape changes from a spherical to a non-spherical form. In addition, the influence of the QD shape upon the electronic structure can be modulated by external magnetic fields. We also show that the electron–acoustic phonon scattering rates strongly depend upon both the QD shape and the applied magnetic field. As an additional parameter, the QD shape can be used to modify the electron–acoustic phonon interaction in a wide range. Moreover, the scattering rate of different transitions, such as Δm=0(1), presents distinct magnetic field dependency.     

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Polar optical phonon states and their electron-phonon coupling properties in a wurtzite nitride quantum dot

Within the framework of the macroscopic dielectric continuum model, the interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) structure are derived and studied. The approximative analytical-phonon-states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. ρ-IO/z-PR mixing modes and the z-IO/ρ-PR mixing modesexisting in Q0D wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrical forms. Via a standard procedure of field quantization, the Fröhlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. And the orthogonal relations of polarization eigenvectors for these IO-PR mixing modes are also deduced. Numerical calculations of dispersive relation and electron-phonon coupling properties on a wurtzite GaN cylindrical QD are carried out. The behaviors that the IO-PR mixing phonon modes in wurtzite QDs reduce to the IO modes and PR modes in wurtzite QW and QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics. The result shows that the present theories of polar mixing phonon modes in wurtzite cylindrical QDs are consistent with the phonon modes theories in wurtzite QWs and QWR systems. The coupling properties of electron-(IO-PR) mixing modes interactions are studied and analyzed in detail. An abnormal increase of electron-phonon coupling strength are observed as the azimuthal quantum numbers and order of phonon modes increase, which is ascribed to the modulation effect of different dielectric functions of wurtzite crystals in radius- and axial-directions. The analytical electron-phonon interaction Hamiltonians obtained here are useful for further investigating phonon influence on optoelectronics properties of wurtzite Q0D QD structures.     

Strong generation of coherent acoustic phonons in semiconductor quantum dots

We present experimental results obtained in two-color pump-probe experiments performed in semiconductor self-assembled quantum dot (QD) layers. The sample reflectivities present several acoustic contributions, among which are strong acoustic phonon wave packets. A comparison between one- and two-color experiments and a fine analysis of the echo shape attest that a high magnitude phonon pulse emerges from each single QD layer. This conclusion is supported by a numerical modeling which perfectly reproduces our experimental signals only if we introduce a strong generation in each QD layer. We explain such a strong emission thanks to an efficient capture of the carriers by the QDs.     

Phonon dispersion in aluminium arsenide and antimonide

The phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model. The results obtained from this model are compared with the experimental values wherever it is available. Since there is no complete experimental phonon dispersion curves for AlAs, we could not compare our calculated results, but the results of AlSb have been compared with the inelastic neutron scattering measurements at 15 K. However, we compare the phonon frequencies of AlAs and AlSb at critical points of the Brillouin zone obtained by our calculations and Raman spectroscopy measurements. This model predicts the phonon modes satisfactorily in all the symmetry directions of the Brillouin zone (BZ). The spectrum has similar features as observed in other III–V compound semiconductors.     

Raman spectroscopy of very small Cd1−xCoxS quantum dots grown by a novel protocol: direct observation of acoustic‐optical phonon coupling

Glass‐embedded Cd_1−xCo_xS quantum dots (QDs) with mean radius of R ≈ 1.70 nm were successfully synthesized by a novel protocol on the basis of the melting‐nucleation synthesis route and herein investigated by several experimental techniques. Incorporation of Co²⁺ ions into the QD lattice was evidenced by X‐ray diffraction and magnetic force microscopy results. Optical absorption features with irregular spacing in the ligand field region confirmed that the majority of the incorporated Co²⁺ ions are under influence of a low‐symmetry crystal field located near to the Cd_1−xCo_xS QD surface. Electron paramagnetic resonance data confirmed the presence of Co²⁺ ions in a highly inhomogeneous crystal field environment identified at the interface between the hosting glass matrix (amorphous) and the crystalline QD. The acoustic‐optical phonon coupling in the Cd_1−xCo_xS QDs (x ≠ 0.000) was directly observed by Raman measurements, which have shown a high‐frequency shoulder of the longitudinal optical phonon peak. This effect is tuned by the size‐dependent sp‐d exchange interaction due to the magnetic doping, causing variations in the coupling between electrons and longitudinal optical phonon. Copyright © 2013 John Wiley & Sons, Ltd.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.