LD泵浦Nd∶YVO4晶体LBO倍频457 nm蓝色激光器

用国产半导体激光二极管泵浦Nd∶YVO4晶体,在室温下获得914 nm激光连续输出，用Ⅰ类临界位相匹配LBO腔内倍频获得457 nm蓝色激光输出.当泵浦注入功率为1.7 W时倍频蓝激光最大输出达20 mW，光光转换效率为1.2%,功率稳定性24 h内优于±3%.     

LD泵浦Nd∶YAG/LBO结构660 nm红光激光器

采用国产LD泵浦Nd∶ YAG晶体,通过谐振腔镜的膜系选择获得了Nd3+离子中波长为1319 nm的受激辐射振荡,首次用I类临界位相匹配LBO进行腔内倍频,实现了660 nm红色激光的高效倍频输出.当泵浦注入功率为800 mW时,660 nm激光基横模(TEM00)输出功率为46 mW,光光转换效率高达5.75%.     

LD泵浦的高效率YVO4/LBO红光激光器

报道了用国产 L D泵浦 Nd∶YVO4产生的 1.34 2 μm的输出。首次用 类临界位相匹配 L BO腔内倍频实现了 6 71nm的红激光输出。当泵浦注入功率为 80 0 m W时 ,倍频红激光基模输出为 5 2 m W,光光转换效率达 6 .5 %。光束经扩束准直后测得偏振比高于 10 0∶ 1。在输出功率为 40 m W时 ,48h连续工作稳定性优于± 2 %     

LD泵浦Nd∶YVO_4晶体LBO倍频457 nm蓝色激光器

用国产半导体激光二极管泵浦Nd∶YVO4晶体,在室温下获得914nm激光连续输出,用Ⅰ类临界位相匹配LBO腔内倍频获得457nm蓝色激光输出当泵浦注入功率为1.7W时倍频蓝激光最大输出达20mW,光光转换效率为1.2%,功率稳定性24h内优于±3%     

LD泵浦的Nd∶GdVO_4/KTP腔内倍频激光器(英文)

基于对Nd∶GdVO4 晶体热焦距的测量及其 1.0 6 μm激光基本性能 ,用三镜折叠腔研究了半导体激光器 (LD)泵浦的Nd∶GdVO4 /KTP晶体的内腔倍频性质 当用从直径为 2 0 0 μm的单光纤输出的低功率的半导体激光泵浦时 ,绿光的阈值是 2 6mW ,光光转换效率为 17.3% 当用从直径为 1.5 5mm的光纤束输出的高功率的半导体激光泵浦时 ,绿光的阈值是 2 0 0mW ,光光转换效率为 19.35 %     

高效三倍频全固态Nd∶YAG/LBO紫外激光器

报道了一种侧面泵浦Nd∶YAG、声光调Q、LBO晶体腔外倍频和三倍频的355 nm准连续波紫外激光器.采用结构简单、紧凑的平-凹腔设计,在152 W的泵浦功率下,重复频率5 kHz时,获得平均功率1.62 W的355 nm TEM00模激光输出,三倍频的转换效率为25%;重复频率1 kHz时,获得平均功率518 mW、单脉冲能量518 μJ、脉宽17 ns、峰值功率高达30 kW的紫外激光输出.     

LD泵浦的Nd:GdVO4/KTP腔内倍频激光器

基于对Nd:GdVO4晶体热焦距的测量及其1.06 μm激光基本性能,用三镜折叠腔研究了半导体激光器(LD)泵浦的Nd:GdVO4/KTP晶体的内腔倍频性质.当用从直径为200 μm的单光纤输出的低功率的半导体激光泵浦时,绿光的阈值是26 mW,光光转换效率为17.3%.当用从直径为1.55 mm的光纤束输出的高功率的半导体激光泵浦时,绿光的阈值是200 mW,光光转换效率为19.35%.     

LD泵浦Nd∶YAG/Cr∶YAG腔外频率变换高功率紫外激光器

用KTP晶体对激光二极管端面泵浦的Nd∶YAG晶体,Cr∶YAG被动调Q产生的1064 nm脉冲激光器进行腔外倍频,用BBO晶体四倍频产生266 nm紫外激光.用15 W的LD阵列,当LD泵浦功率为12 W的情况下,红外(1064μm)调Q平均输出功率为2.2 W,脉冲序列周期为40μs,脉宽为18 ns,峰值功率高达4.9 kW.采用KTP腔外二倍频,532 nm的绿光输出平均功率为850 mW;用BBO腔外四倍频,266 nm的紫外光输出平均功率高达215 mW,绿光-紫外光光转换效率为25.2%,红外到紫外总的转换效率为9.8%.     

LD泵浦Nd:YAG/LBO结构660 nm红光激光器

采用国产LD泵浦Nd:YAG晶体,通过谐振腔镜的膜系选择获得了Nd³⁺离子中波长为1319 nm的受激辐射振荡,首次用I类临界位相匹配LBO进行腔内倍频,实现了660 nm红色激光的高效倍频输出.当泵浦注入功率为800 mW时,660 nm激光基横模(TEM₀₀)输出功率为46 mW,光光转换效率高达5.75%.     

LD脉冲侧面泵浦Nd∶YAG电光调Q低重频窄脉宽紫外激光器

介绍了在1~20 Hz电光调Q情况下,半导体脉冲激光侧面泵浦Nd∶YAG晶体腔外四倍频266 nm紫外激光器的输出特性.实验采用直腔结构,在腔外分别利用KTP和BBO晶体产生532 nm倍频绿光、266 nm四倍频紫外激光.当泵浦电流为120 A、重复率为1 Hz时,266 nm紫外激光最大单脉冲能量为15.4 mJ、脉宽8 ns,峰值功率高达1.93 mW;重复率20 Hz时,获得了最大平均功率为156.2 mW的266 nm紫外激光输出,四倍频的转换效率为10.63％.同时利用一组分光镜,获得了352 mW的532 nm脉冲绿光和423 mW的1 064 nm脉冲红外光输出.     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Etude par diffraction neutronique des solutions solides K1−xBixF1+2xetRb1−xBixF1+2x

Bragg neutron diffraction studies have been carried out on the fluorite type solid solutions K_1?xBi_xF_1+2x (0.50 ? × ? 0.70) and Rb_1?xBi_xF_1+2x (0.50 ? × ? 0.60). The distribution of the fluorine atoms between normal and interstitial sites is given as a function of substitution rate. A substition mechanism is proposed. Electrical and NMR results on one side and structural data on the other side are correlated. A study of the background as a function of temperature has allowed to determine the static origin of its modulation. By inelastic neutron diffusion, it has been shown that the number of carriers is weak, which involves a high mobility.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.