Theoretical investigation of the intrinsic piezoelectric properties for tetragonal BaTiO3 epitaxial films

The orientation dependences of the converse longitudinal piezoelectric constant d_33,f, and the in-plane converse piezoelectric constant e_31,f, are calculated for tetragonal barium titanate epitaxial films. The calculations demonstrate that both e_31,f and d_33,f have their maximum values along an axis close to the (1 1 1) direction of the pseudo-cubic system, which are similar to the orientation dependence results for a tetragonal BaTiO₃ single crystal. The calculated piezoelectric constants for a (1 1 1) oriented BaTiO₃ epitaxial film (e_31,f = −23 C/m², d_33,f = 124 pm/V) suggest that it is a good candidate material for lead-free MEMS applications.     

First-principles study of nanotubes within the tetragonal,hexagonal and dodecagonal cycle structures

A systematic study has been done on the structural and electronic properties of carbon, boron nitride and aluminum nitride nanotubes with structure consisting of periodically distributed tetragonal (T ≡A₂X₂), hexagonal (H ≡A₃X₃) and dodecagonal (D ≡A₆X₆) (AX=C₂, BN, AlN) cycles. The method has been performed using first-principles calculations based on density functional theory (DFT). The optimized lattice parameters, density of state (DOS) curves and band structure of THD-NTs are obtained for (3, 0) and (0, 2) types. Our calculation results indicate that carbon nanotubes of these types (THD-CNTs) behave as a metallic, but the boron nitride nanotubes (THD-BNNTs) (with a band gap of around 4 eV) as well as aluminum nitride nanotubes (THD-AlNNTs) (with a band gap of around 2.6 eV) behave as an semiconductor. The inequality in number of atoms in different directions is affected on structures and diameters of nanotubes and their walls curvature.     

Semiempirical studies of the electronic structure of aluminophosphide and Haeckelite boronitride nanotubes

The paper presents the results of semiempirical quantum-chemical calculations of the electron energy characteristics of Haeckelite boronitride nanotubes (n, n)-BN₄₆₈ (n = 3, ..., 14), (n, n)-BN₄₈ (n = 3, ..., 11), and (n, n)-BN₅₇ (n = 4, 5, 6). The nanotubes were found to be dielectrics with forbidden band widths from 5.5 to 8 eV. The forbidden band energy of the nanotubes increased as their diameter grew. The influence of substitution defects on the physical properties of Haeckelite boronitride nanotubes was studied for the example of the carbon atom.     

Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.     

AB initio energy band structure of polysulfur nitride, (SN)x

All electron energy band structure is reported for an infinite one-dimensional model of polysulfur nitride, (SN)_x, using the ab initio LCAO Hartree-Fock method. The calculated values of the effective mass and density of states at the Fermi level are ?0.72 m_e and 0.06 states/(eV spin molecule), respectively. An appreciable amount of charge transfer (0.30 e) from sulfur to nitrogen was obtained. Finally, comparison is made with the results of a semi-empirical version of the same method.     

Structure and properties of BeO nanotubes

The structure of a new non-carbon (beryllium oxide BeO) nanotube consisting of a rolled-up graphene sheet is proposed, and its physical properties are described. Ab initio calculations of the binding energy, the electronic band structure, the density of states, the dependence of the strain energy of the nanotube on the nanotube diameter D, and the Young’s modulus Y for BeO nanotubes of different diameters are performed in the framework of the density functional theory (DFT). From a comparison of the binding energies calculated for BeO nanotubes and crystalline BeO with a wurtzite structure, it is inferred that BeO nanotubes can be synthesized by a plasma-chemical reaction or through chemical vapor deposition. It is established that BeO nanotubes are polar dielectrics with a band gap of ～5.0 eV and a stiffness comparable to that of the carbon nanotubes (the Young’s modulus of the BeO nanotubes Y _BeO is approximately equal to 0.7Y _C, where Y _C is the Young’s modulus of the carbon nanotubes). It is shown that, for a nanotube diameter D > 1 nm, the (n, n) armchair nanotubes are energetically more favorable than the (n, 0) zigzag nanotubes.     

First-principles calculations of BC4N nanostructures: stability and electronic structure

In this work, we apply first-principles methods to investigate the stability and electronic structure of BC₄N nanostructures which were constructed from hexagonal graphite layers where substitutional nitrogen and boron atoms are placed at specific sites. These layers were rolled up to form zigzag and armchair nanotubes, with diameters varying from 7 to 12 Å, or cut and bent to form nanocones, with 60^° and 120^° disclination angles. The calculation results indicate that the most stable structures are the ones which maximize the number of B–N and C–C bonds. It is found that the zigzag nanotubes are more stable than the armchair ones, where the strain energy decreases with increasing tube diameter D, following a 1/D ² law. The results show that the 60^° disclination nanocones are the most stable ones. Additionally, the calculated electronic properties indicate a semiconducting behavior for all calculated structures, which is intermediate to the typical behaviors found for hexagonal boron nitride and graphene.     

Boron nitride nanotubes with quadrangular cross sections: Density functional studies

Density functional theory (DFT) calculations have been performed to investigate the availabilities and properties of boron nitride nanotubes (BNNTs) with quadrangular cross sections. To achieve the purposes, the original structure of a representative BNNT was individually decorated by the carbon and silicon atoms to make the C-BNNT and Si-BNNT models. The sp³ hybridizations were set for the C and Si atoms to make possible the formation of the quadrangular cross sections for the BNNTs. The optimized results indicated that the investigated models could be stabilized; however, they showed different properties. The atomic scale properties based on computations of quadrupole coupling constants (C_Q) also approved different properties for the C-BNNT and Si-BNNT models. Moreover, the C_Q parameters indicated that the properties of C-BNNT could be considered similar to the original BNNT; however, more discrepancies were observed for the Si-BNNT.     

Modeling of electronic density of states for single-wall carbon and boron nitride nanotubes

The electronic density of states is calculated for all possible geometric configurations of single-wall carbon and boron nitride nanotubes. The calculation is based on the numerical differentiation of the two-dimensional dispersion relations for graphite and hexagonal boron nitride. The differentiation is performed for all allowed values of the wave vector using the π-electron approximation. For the particular carbon nanotubes chosen as examples, a good agreement is demonstrated between the calculated values of energy spacing of the symmetric van Hove singularities in the density of states and the experimental data obtained from the resonance Raman scattering study.     

Coalescence of BnNn fullerenes: A new pathway to produce boron nitride nanotubes with small diameter

Using density functional theory calculations, we predict that single-walled hemispherical-caped boron nitride (BN) nanotubes with small diameters can be produced via the coalescence of stable nanoclusters. Specifically, the assembly of B_nN_n (n=12,24$n=12,24$) clusters exhibiting particularly high stability and leading to armchair (3,3)$(3,3)$ and (4,4)$(4,4)$ BN nanotubes, respectively, are considered. The formed finite-length BN nanotubes have semiconducting properties with wide band gaps attractive to nano-device applications.     

Effects of experimental parameters on composition of boron carbon nitride thin films deposited by magnetron sputtering

We have synthesized boron carbon nitride thin films by radio frequency magnetron sputtering. The films structure and composition were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the three elements of B, C, N are chemically bonded with each other and atomic-level hybrids have been formed in the films. The boron carbon nitride films prepared in the present experiment possess a disordered structure. The influence of PN₂/PN₂+Ar, total pressure and substrate bias voltage on the composition of boron carbon nitride films is investigated. The atomic fraction of C atoms increases and the fractions of B, N decrease with the decrease of PN₂/PN₂+Ar from 75% to 0%. There is an optimum total pressure. That is to say, the atomic fractions of B, N reach a maximum and the fraction of C atoms reaches a minimum at the total pressure of 1.3 Pa. The boron carbon nitride films exhibit lower C content and higher B, N contents at lower bias voltages. And the boron carbon nitride films show higher C content and lower B, N contents at higher bias voltages.     

Refractive indices, order parameter and principal polarizability of cholesteric liquid crystals and their homogeneous mixtures

Measurements of refractive indices (n_e,n_o) and birefringence (Δn) have been made in solid, cholesteric and isotropic phases of cholesteryl carbonate, cholesteryl stearate and their three homogeneous mixtures of concentration 0.25, 0.50 and 0.77 at varying temperature in the range of 18-35 °C. The results clearly indicates that various transitions are of the first order. For accurate measurement of Δn, a modified wedge method was used. Using n_e and n_o, principal polarizability (α_e,α_o), internal field factor (γ_e,γ_o) and order parameter (S) have been evaluated, and their temperature dependence discussed. The order parameter has been determined by using the isotropic internal field model (Vuks approach) and the anisotropic internal field model (Neugebauer's approach), and both values agree up to average deviation of 0.7%.     

Conductivity of carbon nanotubes in a longitudinal magnetic field

Multiwall carbon nanotubes exhibit oscillations of magnetoresistance with the period Φ₀=hc/2e [A. Bachtold, C. Strunk, J.-P. Salvetat, et al., Nature 397, 673 (1999)]. This effect is analogous to the Sharvin effect for a normal metal [D. Yu. Sharvin and Yu. V. Sharvin, Pis’ma Zh. Éksp. Teor. Fiz. 34, 285 (1981)]. It is shown that, along with the magnetoresistance peaks corresponding to the flux values that are multiples of Φ ₀, additional peaks with a period three times shorter can be observed in carbon nanotubes.     

Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe₂O₃ catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH₃) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe₂O₃ mixture.     

Multireference CI calculations of radiative transition probabilities between low lying quartet states of the C2+ ion

Potential energy functions for the ten lowest electronic states of the C₂⁺ ion have been calculated from correlated CASSCF and MC-CI electronic wavefunctions and used for derivation of the spectroscopic constants. The predicted values are expected to be accurate within 0.01 Å for R_e, 20–30 cm⁻¹ for ω_e and 0.05–0.1 eV for T_e. For the three lowest quartet states the electronic transition moment functions have also been calculated. For the transitions among these states, radiative lifetimes and absorption oscillator strengths are given which should be accurate within about 15%.     

The parameter of the optical indicatrix of guanidinium aluminum-sulfate hexahydrate crystals

The absorption coefficient (220–1200 nm) and refractive index (800–450 nm) spectra of a strongly anisotropic guanidinium aluminum-sulfate hexahydrate (GASH) crystals are measured. It is shown that the optical anisotropy of GASH crystals in the visible spectral region is significant, while the crystal in the polar direction becomes isotropic. The contribution of IR oscillators to the electronic polarizability of GASH is sharply anisotropic. It is found that the constants of the Sellmeier dispersion formula qualitatively agree with the vacuum ultraviolet spectra calculated from first principles. The experimental refractive indices coincide with the calculated values with an accuracy of 0.10 (n _e ) and 0.1% (n _o ). It is proposed to use the GASH crystal for development of optical phase difference compensators.     

Interwall conductance in double-walled armchair carbon nanotubes

The dependence of the interwall conductance on distance between walls and relative positions of walls are calculated at the low voltage by Bardeen method for (n,n)@(2n,2n) double-walled carbon nanotubes (DWCNTs) with n=5,6,…,10. The calculations show that interwall conductance does not depend on temperature (for T?500 K) and current-voltage characteristic is linear. The conductance decreases by 6 orders of magnitude when the interwall distance is doubled. Thus, depending on the interwall distance, DWCNTs can be used as temperature stable nanoresistors or nanocapacitors.     

Ground-state constants, ab initio anharmonic force field, and equilibrium structure of F2BOH

The millimeterwave spectra of F₂¹⁰BOH and F₂¹¹BOH (difluorohydroxyborane) have been measured in their ground vibrational state. Accurate rotational and centrifugal distortion constants have been determined. The equilibrium geometry and anharmonic force fields have been calculated at the CCSD(T) level of theory. The ab initio centrifugal distortion constants and rotation-vibration interaction constants are compared to the experimental values. Some discrepancies are found and discussed. Particularly, it is explained why the semi-experimental structure is not reliable. The best equilibrium structure is: r_e(BF_cis) = 132.29 pm, r_e(BF_trans) = 131.29 pm, r_e(BO) = 134.48 pm, r_e(OH) = 95.74 pm, ∠_e(FBF) = 118.36°, ∠_e(F_cisBO) = 122.25°, and ∠_e(BOH) = 113.14°.     

The Equilibrium Structure of Silyl Fluoride

The experimental equilibrium structure of silyl fluoride has been determined using new sets of accurate rotational constants that have recently been obtained by taking into account the most important interactions between the excited vibrational states. The equilibrium structure has also been calculated at the CCSD(T) level of theory with the cc-pVQZ+1 basis set (including corrections for the core correlation). The anharmonic force field up to semidiagonal quartic terms has been calculated at the MP2 level of theory and the equilibrium structure has been derived from the experimental rotational constants and the ab initio rovibrational interaction parameters. Finally, the average structure of both ²⁸SiH₃F and ²⁸SiD₃F has been reevaluated and used to derive the equilibrium structure. These structures are compared and the experimental structure is found to be in slight disagreement with the other ones. The preferred structure is obtained by calculating the median value of the different structures. The results are r_e(SiF)=1.5907 (9) Å, r_e(SiH)=1.4696 (13) Å, ∠_e(HSiF)=108.32(15)°, and ∠_e(HSiH)=110.60(14)°.     

The vapor phase Raman spectra,Raman band contour analyses,Coriolis constants,force constants,and values for thermodynamic functions of the trihalides of group V

The vapor phase Raman spectra have been recorded of the molecules PX₃ (X = F, Cl, or Br), AsX₃ (X = F, Cl, Br, or I), and SbX₃ (X = Cl, Br, or I) in sealed tubes at 22–365°C as appropriate. Attempts to record the vapor phase Raman spectra of the molecules PI₃, SbF₃, and BiX₃ (X = F, Cl, Br, or I) were unsuccessful. The infrared and Raman rotational branch separations of the a₁ species fundamentals for these molecules are in agreement with the theoretically calculated values. The Raman band contours of the e-species fundamentals have been analyzed to yield, in favorable cases, values for the corresponding Coriolis constants which have been compared with those obtained from infrared band contour analyses, and which have been employed to constrain the e-species force constants. It is concluded that the Raman contour method for defining Coriolis and thus force constants should be regarded as further, but not necessarily the best, experimental method with which to help to constrain the field. Values for various thermodynamic functions of the molecules have been calculated from the new values for the fundamental frequencies and from the most recent structural data.