The growth and domain structure of YBa2Cu3Ox films on neodymium gallate substrates with a deviation of the normal to the surface from the [110] direction in NdGaO3

The growth, crystal structure, and electrophysical properties of YBa₂Cu₃O_x (YBCO) epitaxial films grown with and without a CeO₂ epitaxial sublayer on NdGaO₃ (NGO) substrates with the normal to the surface deviating from the [110] axis by 5° to 26.6° around the [001] axis are investigated. It is shown that the orientation of YBCO epitaxial films grown on such substrates is determined by the existence of symmetry-equivalent directions in the substrate and in the CeO₂ layer, as well as by the rate of film deposition. For a high deposition rate, YBCO films grow on the CeO₂ sublayer in the [001] orientation irrespective of the orientation of the substrate and the sublayer. It was found that when the angle of deviation of the substrate plane is from the (110) NGO plane, twinning of one or both twinning complexes in YBCO may be suppressed.     

Orientation of adsorbed ethylene oxide on Ni(110) by X-ray photoelectron diffraction

The adsorption of ethylene oxide on Ni(110) was studied at 95 K and monolayer coverage by angle-resolved X-ray photoelectron spectroscopy. A slow radiation-induced decomposition at hv = 1486.7 eV to most likely methoxy was noted. The orientation of the adsorbed ethylene oxide was determined by measuring forward scattering enhancements in the O 1s intensity distribution. Peaks in polar (θ) as well as azimuthal (φ) scans occurred at four angular positions in 2π above the surface: (θ = 54°, φ = 36°, 144°, 216°, 324°). These positions were evaluated to yield the tilt angle of the molecule at 48°_relative to normal, and the COC bond angle of adsorbed C₂H₄O of about 57°. The molecule is tilted towards the [001] and [001̄] directions (two domains), with a mirror plane in the [001] azimuth.     

复层籽晶制备单晶畴YBCO超导块材

本文介绍了沿c轴方向排布复层籽晶制备YBCO超导单畴的方法.该方法能够使123晶畴在不同深度进行生长.通过c轴方向籽晶的排布,研究了YBCO单畴中的(001)/(001)晶界.虽然由于压模中籽晶ab面的倾斜,造成部分(001)/(001)晶界出现大角晶界,使晶界上残余有液相,但仍有晶界连接良好、晶界上不存在残余液相和211粒子、错配角小于5°的(001)/(001)晶界的形成.对于制备有深度要求的单畴块材,复层籽晶法是一种有效的生长方法.在定向控制好籽晶方向的条件下,该方法可以提高超导单畴的生长深度.在77K,0.5T下,测试该样品磁悬浮力达到37N.     

Critical current of YBa(2)Cu(3)O(7-delta) low-angle grain boundaries

Transport critical current measurements have been performed on 5 degrees [001]-tilt thin film YBa(2)Cu(3)O(7-delta) single grain boundaries with the magnetic field rotated in the plane of the film, phi. The variation of the critical current has been determined as a function of the angle between the magnetic field and the grain boundary plane. In applied fields above 1 T the critical current j(c) is found to be strongly suppressed only when the magnetic field is within an angle phi(k) of the grain boundary. Outside this angular range the behavior of the artificial grain boundary is dominated by the critical current of the grains. We show that the phi dependence of j(c) in the suppressed region is well described by a flux cutting model.     

Nucleation of dynamic recrystallization and variant selection in copper bicrystals

Orientation-controlled copper bicrystals containing [001] symmetrical tilt boundaries aligned parallel to the loading axis were deformed in tension at 923?K and a strain rate of 4.2?×?10^?4?s^?1. The nucleation of dynamic recrystallization (DRX) was investigated along the grain boundary. For this purpose, both optical and orientation imaging microscopy methods were used. After grain-boundary migration (GBM) and bulging, nuclei appeared behind the most deeply indented grain boundary regions. The critical strain for nucleation was about one-quarter to one-half of the peak strain and depended on the misorientation angle. All the nuclei were twin-related (Σ3) to the matrices. Furthermore, all the primary twin traces were parallel to those of the inactive slip planes of the parent single crystals. Crystallographic analysis revealed the important role of the direction of GBM on twinning-plane variant selection. The characteristics of grain boundary nucleation depended sensitively on grain boundary character and on grain boundary mobility. The observed DRX nucleation mechanism is discussed in relation to the occurrence of GBM and twinning.     

单晶合金激光熔凝过程中晶向对单晶完整性的影响

运用几何模型对单晶合金激光熔凝过程中激光扫描方向与[100]方向夹角ξ变化时熔池内的枝晶生长方向和速度进行了计算,研究了ξ增大时不同晶向区域的分布变化规律.发现随着ξ的增大, 0]区域增大,[010]区域减小,且熔池两边不同部分速度差别增强.根据速度变化规律,构造出了熔池不同部位的过冷区域变化图,说明了可能出现新晶粒的趋势变化,并与实验结果进行了比较,揭示了在晶向不同的交界区域产生新晶粒的内在机理. 关键词： 单晶合金 激光熔凝 晶向 组成过冷     

Structure of Ultrathin Polycrystalline Iron Films Grown on SiO<Subscript>2</Subscript>/Si(001)

The structure of polycrystalline Fe films grown on an oxidized Si(001) surface at room temperature has been studied by the technique of high-energy electron diffraction. It has been found that the grain orientation in the films depends of the amount of deposited iron. In Fe films less than 5 nm thick, grains have been found to be randomly oriented. Fe films more than 5 nm in thickness exhibit the (111) texture with an axis coinciding with the surface normal. The angular dispersion of the [111] direction in the Fe lattice from the surface normal is ±25°. It has been found that as the Fe films become thicker, the (111) texture changes to the (110) texture.     

Multi-phase field simulation of competitive grain growth for directional solidification

The multi-phase field model of grain competitive growth during directional solidification of alloy is established. Solving multi-phase field models for thin interface layer thickness conditions, the grain boundary evolution and grain elimination during the competitive growth of SCN-0.24-wt% camphor model alloy bi-crystals are investigated. The effects of different crystal orientations and pulling velocities on grain boundary microstructure evolution are quantitatively analyzed. The obtained results are shown below. In the competitive growth of convergent bi-crystals, when favorably oriented dendrites are in the same direction as the heat flow and the pulling speed is too large, the orientation angle of the bi-crystal from small to large size is the normal elimination phenomenon of the favorably oriented dendrite, blocking the unfavorably oriented dendrite, and the grain boundary is along the growth direction of the favorably oriented dendrite. When the pulling speed becomes small, the grain boundary shows the anomalous elimination phenomenon of the unfavorably oriented dendrite, eliminating the favorably oriented dendrite. In the process of competitive growth of divergent bi-crystal, when the growth direction of favorably oriented dendrites is the same as the heat flow direction and the orientation angle of unfavorably oriented grains is small, the frequency of new spindles of favorably oriented grains is significantly higher than that of unfavorably oriented grains, and as the orientation angle of unfavorably oriented dendrites becomes larger, the unfavorably oriented grains are more likely to have stable secondary dendritic arms, which in turn develop new primary dendritic arms to occupy the liquid phase grain boundary space, but the grain boundary direction is still parallel to favorably oriented dendrites. In addition, the tertiary dendritic arms on the developed secondary dendritic arms may also be blocked by the surrounding lateral branches from further developing into nascent main axes, this blocking of the tertiary dendritic arms has a random nature, which can have aninfluence on the generation of nascent primary main axes in the grain boundaries.     

Grain boundary misorientation changes during grain growth in pure aluminium

A new method is described for data-logging large amounts of grain boundary misorientation information from channelling patterns in the scanning electron microscope (SEM). The method relies on producing specimens where the grain size is larger than the specimen thickness and where the grain boundary planes are perpendicular to the specimen plane (the so-called columnar structure). Results for grain growth in pure aluminium at 460 and 500°C are presented. There is an increase in the proportion of low angle boundaries at the expense of high angle boundaries during growth times of up to a few hours. The reasons are thought to be partly connected with lower low angle boundary mobility compared with high angle boundaries. However, the growth kinetics appear to be normal over the entire growth time range.     

Connection between deformation texture and deformed grain shape in commercially pure iron after rolling

A definite connection was established in [1] between the compression texture of iron and deformed grain shape and orientation in relation to the direction of compression.Analysis of deformed grain shape is utilized in the present work to explain texture peculiarities in rolled iron.     

Collective effects in grain boundary migration

In situ high-resolution transmission electron microscopy is used to study grain boundary structure and kinetics in bicrystalline Au films at elevated temperature. We report the first direct evidence for the existence of cooperative atomic motion in grain boundary migration. Certain nanoregions at grain boundaries, typically involving up to several hundred atoms, are found to switch back and forth between neighboring grains. Reversible structural fluctuations at temperatures near 0.5T(m) and above have been discovered in [110] and [001] tilt, as well as in general grain boundaries.     

Characterization of epitaxial MgO growth on Si(001) surface

MgO epitaxial growth on a Si(001) surface by ultrahigh-vacuum molecular beam epitaxy was investigated. Epitaxial orientation and crystalline quality were characterized based on the three-dimensional reciprocal map obtained by Weissenberg RHEED. The epitaxial orientation and crystallinity were strongly dependent on the initial condition of the substrate. When MgO was deposited on a clean Si(001) surface at room temperature a MgO(001) film grew on the Si(001) substrate with two in-plane orientations:MgO[110]//Si[100] and MgO[100]//Si[100]. This is the first observation of MgO epitaxy with the former orientation, which has a smaller mismatch than the latter orientation. When the substrate was exposed to O₂ or thermally oxidized, the latterorientation predominantly grew on the substrate. Deposition of Mg on the substrate also produced the latter orientation. These results imply that nucleation sites on the initial substrate play an important role in determining the epitaxial orientation.     

Fe81Ga19合金晶体生长取向与磁致伸缩性能

通过区熔定向凝固法,生长出[001]易磁化方向与晶体轴向之间存在不同取向差的Fe₈₁Ga₁₉合金单晶体和Fe₈₁Ga₁₉合金多晶体.极图测试结果显示,Fe₈₁Ga₁₉合金单晶体的[001]方向与轴向取向差分别为12°,5°和3°.采用电阻应变片法测定相应磁致伸缩应变,与外加磁场方向平行的轴向磁致伸缩应变分别为254×10^-6,271×10^{-6< 关键词： 磁致伸缩 81Ga₁₉合金')" href="#">Fe₈₁Ga₁₉合金 晶体取向}     

Structure of the α–β Interface in a PdCu Solid Solution

Physics of the Solid State - In accordance with the orientation ratio (110), [001]β || (111), [$$1\bar {1}0$$]α established by fast electron diffraction between the ordered (β) and...     

Vortex lattice studies in CeCoIn5 with H is orthogonal to c

We present small angle neutron scattering studies of the vortex lattice (VL) in CeCoIn5 with magnetic fields applied parallel (H) to the antinodal [100] and nodal [110] directions. For H is parallel to [100], a single VL orientation is observed, while a 90° reorientation transition is found for H is parallel to [110]. For both field orientations and VL configurations we find a distorted hexagonal VL with an anisotropy, Γ=2.0±0.05. The VL form factor shows strong Pauli paramagnetic effects similar to what have previously been reported for H is parallel to [001]. At high fields, above which the upper critical field (H(c2)) becomes a first-order transition, an increased disordering of the VL is observed.     

Formation of three‐dimensional GaAs microstructures by combination of wet and metal‐assisted chemical etching

Previously, plasma‐enhanced dry etching has been used to generate three‐dimensional GaAs semiconductor structures, however, dry etching induces surface damages that degrade optical properties. Here, we demonstrate the fabrication method forming various types of GaAs microstructures through the combination etching process using the wet‐chemical solution. In this method, a gold (Au)‐pattern is employed as an etching mask to facilitate not only the typical wet etching but also the metal‐assisted chemical etching (MacEtch). High‐aspect‐ratio, tapered GaAs micropillars are produced by using [HF]:[H₂O₂]:[EtOH] as an etching solution, and their taper angle can be tuned by changing the molar ratio of the etching solution. In addition, GaAs microholes are formed when UV light is illuminated during the etching process. Since the wet etching process is free of the surface damage compared to the dry etching process, the GaAs microstructures demonstrated to be well formed here are promising for the applications of III–V optoelectronic devices such as solar cells, laser diodes, and photonic crystal devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigating tumor perfusion and metabolism using multiple hyperpolarized (13)C compounds: HP001, pyruvate and urea

The metabolically inactive hyperpolarized agents HP001 (bis-1,1-(hydroxymethyl)-[1-(13)C]cyclopropane-d(8)) and urea enable a new type of perfusion magnetic resonance imaging based on a direct signal source that is background-free. The addition of perfusion information to metabolic information obtained by spectroscopic imaging of hyperpolarized [1-(13)C]pyruvate would be of great value in exploring the relationship between perfusion and metabolism in cancer. In preclinical normal murine and cancer model studies, we performed both dynamic multislice imaging of the specialized hyperpolarized perfusion compound HP001 (T(1)=95 s ex vivo, 32 s in vivo at 3 T) using a pulse sequence with balanced steady-state free precession and ramped flip angle over time for efficient utilization of the hyperpolarized magnetization and three-dimensional echo-planar spectroscopic imaging of urea copolarized with [1-(13)C]pyruvate, with compressed sensing for resolution enhancement. For the dynamic data, peak signal maps and blood flow maps derived from perfusion modeling were generated. The spatial heterogeneity of perfusion was increased 2.9-fold in tumor tissues (P=.05), and slower washout was observed in the dynamic data. The results of separate dynamic HP001 imaging and copolarized pyruvate/urea imaging were compared. A strong and significant correlation (R=0.73, P=.02) detected between the urea and HP001 data confirmed the value of copolarizing urea with pyruvate for simultaneous assessment of perfusion and metabolism.     

Solute-atom segregation at symmetric twist and tilt boundaries in binary metallic alloys on an atomic-scale

Monte Carlo and overlapping distributions Monte Carlo (ODMC) techniques are employed to simulate grain boundary (GB) segregation in a number of single-phase binary metallic alloys—the Au-Pt, Cu-Ni, Ni-Pd, and Ni-Pt systems. For a series of symmetric [001] twist and [001] tilt boundaries, with coincident site lattice (CSL) structures, we demonstrate that the Gibbsian interfacial excess of solute is a systematic function of the misorientation angle. We also explore in detail whether the GB solid solution behavior is ideal or nonideal by comparing the results of Monte Carlo and ODMC simulations. The range of binding free energies of specific atomic sites at GBs for solute atoms is also studied. The simulational results obtained demonstrate that the thermodynamic and statistical thermodynamic models commonly used to explain GB segregation are too simple to account for the microscopic segregation patterns observed, and that it is extremely difficult. If not impossible, to extract the observed microscopic information employing macroscopic models.