超大规模集成电路硅片溶液清洗技术的进展

本文综述了超大规模集成电路制造过程中硅片溶液清洗技术的研究历史及现状, 并对技术的未来发展进行了展望。     

有序介孔硅片粒子表面的修饰及其表征

采用溶胶-凝胶的方法制备了粒径在50~300nm,具有正六边形的介孔二氧化硅片,用1,6-己二异氰酸酯(hexamethylene diisocyanate,HDI)对有序介孔硅片粒子表面进行有机化修饰,使其表面接枝能够参与反应的N=C=O活性基团。用FTIR、热重分析、TEM等分析方法对修饰后的有序介孔硅片粒子进行了表征,以确定HDI接在了有序介孔硅片粒子的表面。     

半导体硅片的电化学研究(英文)

采用电化学直流极化和交流阻抗技术 ,在有光照和黑暗条件下分别研究了半导体硅片在稀释氢氟酸溶液中的电化学特性 .两种电化学技术均对溶液中含有的微量铜 (1 0 - 9wt % -浓度水平 )非常敏感 ,但仅对溶液中的 1 0 - 6 wt % -浓度水平的非离子型表面活性剂敏感 .结果表明 ,有光照条件下在硅 /溶液界面上极易发生电化学反应 ,且该反应对硅表面性质起主导作用 .     

SiO_2-CeO_2复合氧化物对硅片的抛光性能评价

用合成的S iO2-CeO2复合氧化物对单晶硅片进行抛光,测定其抛光速率与制备条件及浆料配制条件之间的关系。结果表明:经800℃煅烧后制得的硅铈摩尔比nS iO2∶nCeO2为2∶1的复合氧化物对硅片具有最大的抛蚀速率。与此同时,选用三乙醇胺和六偏磷酸钠分别作为浆料的pH调节剂和分散剂可以获得理想的浆料分散性和悬浮稳定性。确定了抛光浆料的最佳pH值和固含量分别为11和4%。     

平衡管清洗及装液方法的改进

针对在测定液体饱和蒸气压实验中使用的平衡管(又称为等压计)较难清洗和装液的问题,经过实践摸索,设计了一个清洗平衡管及装液的实验装置。通过用循环水泵给系统抽真空、用调节阀控制各个分支的真空度、在平衡管内使用细径导管导流等手段控制平衡管内液体的流动,达到清洗和装液的目的。该实验装置易于搭建,操作方法易于掌握。使用该方法的操作者能够独立、快速地完成清洗平衡管和装入待测液,从而为开展与液体饱和蒸气压测定相关的实验教学和科研工作创造了更好的实验条件。     

钛材化学清洗工艺综述

介绍了钛材碱洗脱脂除油和酸洗除去氧化皮的原理和方法,重点阐述了钛材碱洗除油和酸洗除去氧化皮的工艺条件、工艺流程和设备.     

高效液相色谱柱清洗与再生方法

分别对反相、正相、离子交换、体积排阻及亲和等色谱柱的清洗与再生方法加以系统综述.使用适当的方法对受污染的色谱柱进行清洗与再生,可恢复其部分分离能力,延长使用寿命.对硅胶基质反相色谱柱,可选择一系列溶剂,按洗脱能力逐渐增强的顺序依次冲洗,或者使用二甲基甲酰胺、乙酰丙酮、SDS及盐酸胍等强洗脱试剂清洗;硅胶基质正相色谱柱用极性逐渐增强的溶剂系统冲洗;有机聚合物、石墨碳及氧化锆固定相色谱柱,用稀酸、稀碱和有机溶剂结合清洗,可将受污染的色谱柱柱效提高50%以上.     

甲基丙烯酸甲酯/苯乙烯在硅片表面的RAFT接枝聚合

将3-(2-二硫代苯甲酸基丙酰氧基)丙基二甲基甲氧基硅烷化学键合于硅片表面.以甲基丙烯酸甲酯和苯乙烯为单体,在硅片表面进行可逆加成-断裂链转移(RAFT)接枝聚合.X-射线光电子能谱仪证实聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)、苯乙烯/甲基丙烯酸甲酯的共聚物(poly(MMA-co-St))都接枝到硅片表面.但3个体系表现出不同的性质,甲基丙烯酸甲酯的RAFT聚合可控性差,分子量比设计分子量大得多,分子量分布指数宽,接枝密度仅为0·03chains/nm2;苯乙烯均聚合的活性/可控性好、分子量分布窄,接枝密度提高到0·21chains/nm2;共聚合体系综合了两个均聚体系的优点,分子量分布较窄,接枝密度最高为0·31chains/nm2,聚合物膜厚随转化率、数均分子量基本呈线性增长.     

掺硼金刚石电极的再生性清洗方法研究

掺硼金刚石电极(BDD)是一种化学和电化学稳定性高、不易吸附污染物的电极.但是多次重复检测较高浓度神经递质如多巴胺、羟色胺后,产生了电极污染.特别是经过表面改性的电极,其表面吸附物难以简单去除.以Fe(CN)3-/4-氧化还原对为探针,通过二次水、乙醇、异丙醇等不同液体超声清洗,发现异丙醇是较好的清洗剂.未改性电极表面...     

固体水果清洗块通过鉴定

不久前,由大连轻工业学院研制开发的“瓜果蔬菜残留农药、化肥清洗块”项目通过了由大连市科技局组织的技术鉴定。 专家组一致认为,固体清除农药残留的技术是一个民生项目,突破了原有的液态清洗剂由上而下的清洗过程。经过固体清洗剂清洗的水果,经检测符合国际残留农药的标准。固体清洗剂成功还原了蔬菜水果的原始绿色,项目成果在清除果蔬表面残留农药技术方面达到了国际先进水平。     

Superamphiphilic Silicon Wafer Surfaces and Applications for Uniform Polymer Film Fabrication

Silicon wafers have been widely used in the semiconductor industry for many decades. Over the past decades, with the development of organic optoelectronic materials, silicon-based organic–inorganic hybrid devices have received more and more interest in fundamental and applied research. To obtain uniform organic films for hybrid devices, superamphiphilic surfaces, on which both water and oil can spread completely, show great advantages. Herein, we prepared superamphiphilic silicon wafer surfaces with contact angles (CAs) near 0° for both water and typical organic liquids. Interestingly, lateral force mode (LFM) atomic force microscopy (AFM) images indicate that the superamphiphilicity is induced by alternating hydrophilic and hydrophobic nanodomains. By making use of these superamphiphilic silicon wafer surfaces, uniform polypyrrole (PPy) films were generated in both water and cyclopentanone, providing a versatile and effective way for the integration of organic optoelectronic materials with inorganic microelectronic devices.     

Preparation of Silicon Nanopowder by Recycling Silicon Wafer Waste in Radio-Frequency Thermal Plasma Process

Silicon nanopowders were prepared from silicon waste by using radio-frequency thermal plasma. Silicon waste, generated from the manufacturing process of silicon wafers, was pulverized to form micrometer-sized silicon starting powder. In order to obtain as much silicon nanopowder as possible from thermal plasma processing, the enhancement of vaporization and the quenching rate of the silicon starting powder were considered as major factors. A counter-flow injection apparatus (CFIA) was introduced for improved vaporization and homogeneous nanoparticles. It was designed to inject argon as a quenching gas in the direction opposite the thermal plasma flame flow. The controlled location of the CFIA injection nozzle and the flow rate of the quenching gas affect the residence time of the injected staring powder by recirculating flow and the vapor density by gas mixing. The variation of the flow pattern inside the reactor and the characteristics of the products were investigated to determine the optimal processing environment to prepare uniform and small silicon nanopowder particles. The environment was defined by two parameters: the flow rate of the counter quenching gas and the distance between the torch and CFIA nozzles. The flow rate of the quenching gas was controlled from 30 to 70 L/min. The distance between the torch and CFIA nozzles was adjusted from 150 to 350 mm. When the quenching gas flow rate of 70 L/min and the distance of 350 mm were applied, the uniform and smallest silicon nanopowders were obtained.     

Orientation of Antibodies on a 3-Aminopropyltriethoxylsilane-Modified Silicon Wafer Surface

An antibody can be specifically oxidized with periodate (NaIO₄) on the carbohydrate side chains at its C-terminal. Rabbit anti-hepatitis B surface antigen (anti-HBsAg) IgG antibodies were bound to the silicon wafer surface by covalent bonds between aldehydes generated on the carbohydrate side chains of the antibodies and the reactive amine groups of 3-aminopropyltriethoxylsilane(APTES)-modified silicon wafer surfaces. A control experiment was also performed by direct attachment of antibodies to glutaraldehyde-treated silicon surfaces. Two different coupling antibody strategies were investigated in this paper. Atomic force microscopy was used to observe the orientation of the site-directed and random attachment of rabbit anti-HBsAg IgG antibodies and the conservation of their antigen-binding capacity (AgBC) was assessed using an enzyme immunoassay (EIA).     

Cleaning of Silicon and Steel Surfaces Using Dielectric Barrier Discharges

The plasma-activated removal of oil from contaminated silicon substrates and galvanized steel sheets has been performed using dielectric barrier discharges (DBD) at atmospheric pressure. Removal rates were determined by ellipsometric measurement of the oil film thickness, using polished silicon as substrates. With galvanized steel sheets, qualitative and quantitative investigations were done using fluorescence microscopic characterization of theplasma-treated surfaces. Both the ellipsometric and the fluorescence microscopic measurements yield the dependence of the removal rate on treatment parameterssuch as plasma–gas composition and gas flow. The film thickness measurements were calibrated using quantitative IR spectroscopic measurements. It could be shown that the removal rate increases with increasing oxygen content in the process gas, static removal rates of 0.6 nm/s and 7 nm/s being obtainedin pure nitrogen and in pure oxygen, respectively. Fluorescence microscopic investigations showed that oil can be removed even from grooves in the galvanized steel sheets.     

硅片表面多金属污染的交流阻抗表征

在接近氢氟酸实际应用浓度条件下, 利用交流阻抗技术研究了硅片表面金属微观污染行为, 在氢氟酸溶液中分别加入0.5和1 mg/g的铜、铁、镍、钙四种金属离子, 获得了硅片在单金属溶液中的特征交流阻抗谱, 并在此基础上研究了三种金属及四种金属共存时的特征交流阻抗谱, 通过等效电路的拟合估算了硅/氢氟酸界面电化学反应的动力学参数, 并结合扫描电镜形貌图探讨了不同类型的单金属和多金属对硅电化学行为的影响. 结果表明, 多金属微观污染是各种单金属协同作用的结果, 铜在硅片上发生电化学沉积, 直接导致硅片表面粗糙化. 铁对硅片表面的破坏严重, 同时影响铜的沉积. 镍的存在使硅片表面更容易氧化. 而钙通过在硅片表面形成氟化钙沉淀物可以钝化表面, 减缓铜在硅片表面的沉积.     

单晶硅片负极界面形貌的原位AFM探测

利用原子力显微镜原位研究单晶硅片负极在首次充放电循环中的界面形貌变化。硅负极表面固体电解质界面(SEI)膜的形成过程为：初始SEI膜从1.5 V开始形成,在1.25–1.0 V之间生长快速,0.6 V左右生长缓慢。初始SEI膜具有层状结构的特征,表层薄膜较软,下层呈颗粒状,机械稳定性较好。在锂化电位下,硅负极表面的单晶结构逐渐变得颗粒化,发生不可逆的结构变化。经过首个充放电循环后,硅负极表面被厚度不均一的SEI膜所覆盖,SEI膜的厚度大约为10–40 nm。     

Surface Formation of Single Silicon Wafer Polished with Nano-sized Al2O3 Powders

"Ice polishing single silicon wafers with nano-sized Al2O3 abrasives can be known as ice fixed abrasives chemical mechanical polishing (IFA-CMP). TAn abrasive slurry was made of nano-sized Al2O3 particles dispersed in de-ionized water with a surfactant and the slurry was frozen to form an ice polishing pad. Then polishing tests of blanket silicon wafers with the above ice polishing pad were carried out. The morphologies and surface roughness of the polished silicon wafers were observed and examined on an atomic force microscope. The subsurface damage was assessed by means of cross-section transmission electron microscopy. The surface chemical constituents of the polished silicon wafers were characterized using X-ray photoelectron spectroscopy in order to gain insight into the chemical mechanisms in the process. Scratch resistance of the single silicon wafer was measured by nanoscratching using a nanoindenter to explore the mechanical removal mechanism. The results show that a super smooth surface with an average roughness of 0.367 nm is obtained within 1000 nm￡1000 nm and there is a perfect silicon diamond structure without any microcracks in the subsurface. The removal of material is dominated by the coactions of ductile regime machining and chemical corrosion. In the end, a model of material removal of IFA-CMP is built."