Influence of hydrostatic pressure on the polarization dynamics of order-disorder ferroelectrics: AgNa(NO2)2

The characteristic ferroelectric dispersion of the complex dielectric constant of the ferroelectric AgNa(NO₂)₂ is measured as function of temperature and hydrostatic pressure. For the first time the temperature and pressure dependences of the static order parameter susceptibility and the order parameter relaxation time could be reproducibly determined. The results are interpreted in terms of a kinetic Ising model, whose parameters show a characteristic pressure dependence. The results are discussed on the basis of thermodynamic relations and related to the dynamical behaviour of other order-disorder ferroelectrics.     

Dielectric retardation and relaxation in Bi0.5La0.5MnO3 ceramic at 80 K

Low-temperature (80 K) measurements are made of the frequency dependences of the real and imaginary parts of the complex dielectric constant and complex electric modulus of bismuth lanthanum manganite Bi_0.5La_0.5MnO₃ ceramic. The presence of two (low- and high-frequency) regions of dielectric retardation and relaxation is revealed. A considerable difference between the average rates of retardation and relaxation and the Debye value in the high frequency region is revealed and explained.     

等静压下0.75Pb（Mg1/3Nb2/3）O3-0.25PbTiO3陶瓷的介电性能研究

研究了等静压对0.75Pb（Mg_1/3Nb_2/3）O₃-0.25PbTiO₃（PMN-25PT）陶瓷介电温谱的影响,PMN-25PT剩余极化随等静压变化和等静压压致相变.结果表明,随着压力增加,PMN-25PT的介电峰值温度T_m降低,/+{dT_m}/-{dP}≈-4℃/kbar,极化弛豫增强;剩余极化随压力增加连续减小;介电常数对压力的依赖关系与对温度场的依赖相似,压力诱导PMN-25PT发生弛豫铁电—顺电相变,相变为宽化的渐变过程,频率色散和极化弛豫更加强烈和普遍. 关键词： 铌镁酸铅-钛酸铅 等静压 介电弛豫 压致相变     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

Giant dielectric response and polaronic hopping in charge-ordered Nd1.75Sr0.25NiO4 ceramics

The structure and dielectric properties of charge-ordered Nd_1.75Sr_0.25NiO₄ ceramics are presented. The giant dielectric constant about 30 000 is observed in the present ceramics even the frequency is up to 5 MHz. There are three dielectric relaxations at the curve of temperature dependence of dielectric constant in the considered temperature range. Based on the comparison of activation energies of dielectric relaxation and electrical conductivity, the giant dielectric response should be attributed to the bulk factor, that is, thermally activated small polaronic hopping in the present ceramics, while the dielectric relaxation around room temperature should cause from the effect of grain boundaries.     

Dielectric relaxation study of dipropylsulfoxide/water mixtures

The complex dielectric spectra of dipropylsulfoxide (DPSO)/water mixtures in the whole concentration range have been measured as a function of frequency between 100 MHz and 20 GHz at four temperatures between 298.15 K and 328.15 K. The dielectric parameters, static dielectric constant (ε_s), relaxation time (τ) and relaxation strength (Δε) have been obtained by the least squares fit method. The relaxation in these mixtures can be described by two Debye functions, whereas for pure DPSO Cole-Davidson type is valid. The relaxation times of the mixtures show a maximum at about x(DPSO) ≈ 0.3. In the concentration range where a maximum appears, the interaction of DPSO with water is presumably the result of hydrogen bonding between water and the sulfonyl group of the sulfoxide molecule. The concentration and temperature dependent excess dielectric constant and effective Kirkwood correlation factor of the binary mixtures have been determined. The excess permittivity is found to be negative for all concentrations.     

Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu3Ti4O12 ceramics

Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu₃Ti₄O₁₂ (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250 K, in addition to the well-investigated dielectric relaxation close to 100 K. The effect of sintering and doping (La³⁺) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La_2/3Cu₃Ti₄O₁₂, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers.     

The study of dielectric relaxation and glass forming tendency in Cd-Se-Te glassy system

The dielectric relaxation spectroscopes of Cd_xSe_70−xTe₃₀ (where x = 0, 5, 7, 10) alloy have been investigated in the temperature range 298-373 K and in the frequency range 100 Hz to 100 kHz near the percolation threshold. The frequency and temperature dependence on the dielectric constant showed a Debye dielectric relaxation process. Using Debye relation, the dielectric constant (?′), the most probable relaxation time (τ) and the barrier height (W) were estimated for binary ternary chalcogenide systems.In addition, the analysis of the results suggests that the effect of Cd content on electronic conduction of the system. The experimental results support to some extent the above criterion in the case of Cd-Se-Te ternary alloy.     

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

两种不同(Ba,Sr)TiO3薄膜介电-温度特性的研究

研究并比较了两种不同(Ba_0.5,Sr_0.5)TiO₃(BSTO)薄膜介电-温度特性.采用脉冲激光沉积技术在Pt/Ti/SiO₂/Si(100)衬底上制备BSTO薄膜，发现制备条件的不同，可以得到介电性质完全不同的BSTO薄膜.在550℃和氮气氛下制备的BSTO薄膜在常温下具有很高的介电常数，在10kHz下，超过2500，并在200K温度以上介电常数基本不变.它的一些电学性质不同于在正常条件(650℃和氧气氛下)制得的BSTO薄膜，而类似于目前广泛报道的巨介电常数材料如CaCu_３Ti_４O₁₂.两种薄膜介电性质测试结果表明: 氧气氛下制备的BSTO薄膜呈现铁电-顺电相变，符合居里-外斯定律；低温氮气氛下制备的BSTO薄膜，介电弛豫时间和温度的关系符合德拜模型，是热激发弛豫.文中给出了产生这种介电特性的初步解释. 关键词： 薄膜 脉冲激光沉积 介电弛豫     

Low frequency dielectric relaxation in lightly doped VO2 single crystals

The relative effects of intrinsic and extrinsic defects on the dielectric relaxation of VO₂ crystals have been investigated by measurement of the dielectric parameters of undoped crystals and crystals doped with Ti, Cr and Al. Measurements have been made in the temperature range 77–250 K and the frequency range 50–100 kHz. The dielectric data is described by a Cole-Cole distribution function with a distribution parameter α ? 0.45 which decreases with increasing temperature. However, the distribution of activation energies g(E) derived from α is almost independent of temperature. The overall dielectric relaxation behaviour is determined primarily by the intrinsic defect structure of VO₂, and the effect of impurities is observed only in changes in the low frequency limiting (static) value of the dielectric constant. The same transport mechanism is found to determine the dc conductivity and the dielectric relaxation and evidence is presented that the dielectric relaxation is of dipolar origin.     

Effect of porosity and pore morphology on the low-frequency dielectric response in sintered ZrO<Subscript>2</Subscript>—8 mol% Y<Subscript>2</Subscript>O<Subscript>3</Subscript> ceramic compact

Effect of porosity and pore size distribution on the low-frequency dielectric response, in the range 0.01–100 kHz, in sintered ZrO₂—8 mol% Y₂O₃ ceramic compacts have been investigated. Small-angle neutron scattering (SANS) technique has been employed to obtain the pore characteristics like pore size distribution, specific surface area etc. It has been observed that the real and the imaginary parts of the complex dielectric permittivity, for the specimens, depend not only on the porosity but also on the pore size distribution and pore morphology significantly. Unlike normal Debye relaxation process, where the loss tangent vis-à-vis the imaginary part of the dielectric constant shows a pronounced peak, in the present case the same increases at lower frequency region and an anomalous non-Debye type relaxation process manifests.     

Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.     

Mechanisms of dielectric polarization in thermotropic liquid-crystalline complexes based on lanthanides

The components of the dielectric constant of a terbium-based liquid-crystalline complex have been measured in the frequency range of 350–5 × 10⁶ Hz. The magnitude and sign of the dielectric anisotropy of the complex have been determined. Dispersion of the dielectric constants in the liquid-crystalline and isotropic phases has been found. The mechanisms responsible for the relaxation phenomena that appear in the studied sample have been determined. The time of dielectric relaxation, the activation energy, and the dipole moment of the complex have been obtained.     

Dielectric parameters in Se70Te30 and Se70Te28Zn2 chalcogenide glasses

Temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) are studied in glassy Se₇₀Te₃₀ and Se₇₀Te₂₈Zn₂. The measurements have been made in the frequency range (8-500 kHz) and in the temperature range 300 to 350 K. An analysis of the dielectric loss data shows that the Guintini's theory of dielectric dispersion based on two-electron hopping over a potential barrier is applicable in the present case.No dielectric loss peak is observed in glassy Se₇₀Te₃₀. However, such loss peaks exist in the glassy Se₇₀Te₂₈Zn₂ in the above frequency and temperature range. The Cole-Cole diagrams have been used to determine some parameters such as the distribution parameter (α), the macroscopic relaxation time (τ₀), the molecular relaxation time (τ) and the Gibb's free energy for relaxation (ΔF).     

金红石相纳米块材TiO2的介电特性

研究了不同制备压力下成型的以金红石相为主的纳米二氧化钛介电常数的频率谱和温度谱。在频率谱上发现,当频率ω<0.1kHz时,随着测量频率的下降,介电常数迅速升高,低频下的介电常数比高频区的介电常数高1—2个数量级。并且随着样品加压压力的提高,介电常数升高,在与之相对应的介电损耗谱上,随着样品加压压力的提高,损耗值下降,损耗峰向低频区位移。对1.0GPa压力下成型的样品,其介电常数随测量温度的升高,分别在50℃和300℃出现两个峰值。经分析得出,影响金红石相纳米二氧化钛介电行为的微观机制主要为晶粒内部的电子松弛极化和界面中的电偶极矩的转向极化,50℃峰对应于电于松弛极化,而300℃峰则对应于电偶极矩的转向极化。 关键词：     

Relaxation processes in non-Debye dielectrics

The specific features of the relaxation processes in non-Debye dielectrics have been investigated. The nature of the difference between the relaxation frequencies of the dielectric constant and dielectric loss (conductivity) has been explained. It has been shown that the average relaxation frequency of the conductivity is considerably (in some cases, by several orders of magnitude) higher than the relaxation frequency of the dielectric constant owing to an increase in the conductivity spectra of the statistical weight of the relaxation processes with short relaxation times.     

Electronic processes in oxide glassy semiconductors and thin-film structures based on them

The physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V₂O₅ is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 18–33, June, 1987.     

Dielectric dispersion in the microwave range of the incommensurate phase (NH4)2BeF4

The complex dielectric constant of (NH₄)₂BeF₄ single crystals was measured in the frequency range from 0.6 to 300 MHz in the vicinity of the transition temperature T_c. It was found that, the relaxation frequency is about 1 × 10⁸Hz atT_c. Dielectric relaxation can be described by a polydispersive process.     

Dielectric anisotropy of 5CB liquid crystal in a decimeter wavelength range

Parallel and perpendicular components of the dielectric constant for 5CB nematic liquid crystal are measured in a relaxation region. Two frequencies f ₁≈30 and f ₂≈350 MHz are determined at which the inversion of the dielectric anisotropy sign is observed. It is shown that the observed sizable high-frequency shift of f ₂ with respect to the value calculated according the Debye theory is caused by the dielectric resonance near the relaxation region.