Jahn-Teller effect on Sm3+ ions in SmB6

Electron spin resonance on samarium ions with stabilized valence Sm³⁺ is investigated in the fluctuating-valence semiconductor SmB₆, both pure and doped with the rare-earth ions Eu²⁺, Er³⁺, and Gd₃₊. The dynamic and static Jahn-Teller effects have been observed for the first time on rare-earth ions. The relation between the Jahn-Teller effect in a fluctuating-valence semiconductor and the excitonic nature of the ground state of such a semiconductor is discussed. Zh. éksp. Teor. Fiz. 115, 1860–1871 (May 1999)     

Surface effects on Sm valence in amorphous Sm alloys

We present the results of XPS and X-ray absorption measurements performed on the amorphous Sm Au and La Sm Au compounds. The XPS Sm 3d$\text{5}\text{2}$ core level spectra in these compounds reveal that at the surface (5 ? 7 Å) the samarium ions present both the Sm²⁺ (4f⁶) and Sm³⁺ (4f⁵) configurations. When the concentration in samarium decreases it is shown that the Sm²⁺ configuration is strongly enhanced at the surface whereas the X-ray absorption measurements indicate on the contrary that in the bulk only the Sm³⁺ configuration is present. Comparison is made with similar findings in pure crystalline Sm and various crystalline rare earth compounds.     

Investigation of In-Gap States in SmB6

We have investigated the low temperature properties of the narrow-gap semiconductor SmB₆ by means of electrical resistivity and specific heat measurements. Results imply that the residual resistivity below about 3 K is non-activated and the corresponding state, which is formed within the in-gap states, has a metallic-like nature. Heat capacity measurements confirmed the metallic-like properties of the in-gap states and revealed, moreover, an enhancement of the specific heat below 2 K which is more expressive for the sample with a lower amount of impurities. The observed behaviour can be attributed to the formation of a coherent state within the in-gap states of this compound.     

Magnetooptical microwave spectroscopy of the coherent magnetic state in the mixed valence compound SmB6 in the frequency range 40–120 GHz

In undoped pure single crystals of the mixed valence compound SmB₆ anomalous ESR absorption is observed in the frequency range v=40–120 GHz at temperatures of 1.8–4.2 K. The ESR for the case of the coherent ground state consists of two components corresponding to g-factors g ₁=1.907±0.003 and g ₂=1.890±0.003. The amplitude of both ESR lines strongly depends on temperature in the temperature range studied: the amplitude of the first line with g=g ₁ increases and the amplitude of the second line decreases with temperature. A model based on consideration of intrinsic defects in the SmB₆ crystalline lattice, with a densit ∼10¹⁵−10¹⁶ cm⁻³, is suggested as an explanation for the anomalous ESR-behavior. In the frequency range v>70 GHz at T=4.2 K, in addition to the main ESR lines, a new magnetic resonance with a hysteretic field dependence is discovered. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 707–712 (25 November 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Density of states and the problem of Sm valence

Density of states for Sm metal has been calculated in DFT/GGA approximation using the same treatment for f and s-d bands. It is concluded that the 4f electrons of Sm must be considered as valence electrons, not shallow core states. Therefore the 4f-5d transition cannot change the valence of Sm, which may be characterized (if necessary) by the sum of all electrons in the s-d-f valence bands. The possibility of alternative interpretation of UPS spectra of Sm adsorbed films is illustrated by calculations of DOS (density of states) for oxygen-contaminated Sm crystal.     

Lattice dynamics in the mixed valence compounds Sm(Y)S,CeSn3 and CePd3

Renormalized phonon energies of typical mixed valence compounds such as Sm(Y)S, CeSn₃ and CePd₃ are calculated. The renormalization is caused by the additional interaction of localized 4f electrons with phonons which can lead to drastic phonon anomalies. These anomalies are found to be completely different for the various systems under consideration.     

On the valence instability in CeAl2

This paper reports the observation of an isostructural electronic phase transition in CeAl₂ near 77 Kbar pressure at ambient temperature. The present volume compression data obtained under truly hydrostatic pressure conditions gives a clear indication of the first order nature of this phase transformation.     

Surface Conductivity of the Ytterbium-Doped Topological Kondo-Insulator SmB6

Doklady Physics - The temperature dependence of the conductivity of the topological Kondo-insulator (TKI) Sm1 – xYbxB6 is investigated in the temperature range 2 < T < 300 K for...     

Ferromagnetic ordering of iron impurities in the valence-fluctuating semiconductor SmB6

The electron paramagnetic resonance (EPR) of the valence-fluctuating semiconductor SmB₆ doped by 1 at % Fe is studied. The EPR measurements are performed on a SmB₆ single crystal in a temperature range of 1.6–300.0 K. A number of resonance lines whose g factors indicate the presence of iron ions in the Fe⁰, Fe⁺, Fe²⁺, and Fe³⁺ states have been detected. The iron ions are ferromagnetically ordered below a Curie temperature T = 100 K, and this ordering can be caused by the exchange interaction of impurity ions due to matrix polarization (a similar mechanism is observed in PdFe alloys). This exchange interaction is estimated to be significantly higher than that in PdFe; this fact can result from a very high density of states in the narrow f band, which is characteristic of a valence-fluctuating material.     

Investigation of phonon anomalies in intermediate valence compounds SmS and Sm0·65Y0·25S

Phonon anomalies in two intermediate valence compounds (IVC), SmS and Sm_0·75Y_0·25S have been investigated using breathing shell model (BSM). The BSM includes breathing motion of electron shells of the rare earth atom due tof−d hybridization. The phonon dispersion curves of IVC, calculated from the present model, agree well with the measured data. One-phonon density of states calculated from the present model compares well with the Raman spectra.     

The sublattice displacements and the elastic constants of A-15 compounds

The nature of the sublattice displacements in A-15 compounds has been discussed. Expressions have been derived for the elastic constants in terms of the force constants for these compounds. The numerical values of the force constants for Nb₃Sn have been evaluated.     

The valence of Sm in a monolayer on Al(100)

Submonolayer and monolayer films of Sm deposited on an Al(100) crystal surface have been studied by LEED and X-ray photoemission spectroscopy. Layers deposited at — 100°C or RT and without subsequent annealing were disordered and composed of Sm in both divalent and trivalent forms. Annealed films showed a pseudo hexagonal structure and were predominantly trivalent. We conclude that a perfect monolayer of Sm on Al(100) is composed wholly of trivalent atoms.     

Criterion of Surface Electron Transport in the Correlated Topological Insulator SmB6

JETP Letters - The galvanomagnetic characteristics of SmB6 single crystals are studied within the temperature range of 1.9?3.6 K at different orientations of the crystal faces. As a result,...     

拓扑近藤绝缘体SmB6中的奇异电子性质

拓扑近藤绝缘体是一种本征的强关联拓扑电子体系,其体能隙来源于近藤关联效应。自2010年拓扑近藤绝缘体的理论概念被提出后,六硼化钐(SmB6) 作为第一种被预测为拓扑近藤绝缘体的材料在这十多年中被多种实验手段反复研究验证,被广泛接受认为是第一种拓扑近藤绝缘体。在这篇综述中,我们回顾了关于SmB6 的一些重要实验结果,比如电输运测量,角分辨光电子能谱(ARPES), 表面形貌分析(STM) 等,并论述了如何通过这些关键的实验证据证实SmB6 的拓扑近藤绝缘物相。同时,我们也展示了SmB6 这一关联电子体系的其他奇异物性,包括中间价态在表面和体内的分离现象,以及量子振荡发现的体振荡信号等等。这些性质表明我们对SmB6 这一材料的理解仍然不充分,其中还有更为丰富的物理值得挖掘。     

The role of the exchange interaction in the valence transition of Sm chalcogenides

The indirect exchange interaction J between localized and conduction electrons has been included in the hamiltonian of the hybridized RFK model. It was found that there are continuous and discontinuous transitions in 〈?f〉 for different values of J.     

Nature of the low-temperature anomalies in the physical properties of the intermediate-valent compound SmB6

The transport properties (Hall coefficient, thermopower, and resistivity) of high-quality single-crystal samples of the classical mixed-valent compound SmB₆ are investigated over a broad temperature range (1.6–300 K) in magnetic fields up to 45 T for the first time following the quasioptical measurements in the 0.6–4.5 meV frequency range [B. Gorshunov, N. Sluchanko, A. Volkov et al., submitted to Phys. Rev. B (1998)]. Measurements in the intrinsic conduction region permit determination of the gap width E _g ≈20 meV and evaluation of the behavior of the mobility and concentration of light and heavy charge carriers, as well as the temperature dependence of the carrier relaxation time, in samarium hexaboride. The results of experimental investigations in the “impurity” conduction region (E _ex≈3.5 meV) are discussed within the Kikoin-Mishchenko exciton-polaron model of charge fluctuations. Arguments supporting the formation of a metallic state with an electron-hole liquid in SmB₆ at liquid-helium temperatures are presented. Zh. éksp. Teor. Fiz. 115, 970–978 (March 1999)     

On the valence and lattice parameter in cerium intermetallic compounds

Experimental data concerning valence and lattice parameter in cerium intermetallic compounds are discussed using the concepts of electronic charge screening and charge transfer between the rare earth and the transition element.     

On the electrical conductivity of intermediate valence compounds

The electrical resistivity of the hybridized 4f-(5d/6s) system interacting with LA phonons is calculated by applying the memory function method to the periodic Anderson model in Hartree-Fock approximation. We propose a new mechanism to explain in part the anomalous resistivity of mixed valence compounds such as CePd₃. For finite hybridizationV a finite fraction of 4f electrons participates in electrical conduction leading to an essential change of the normald band current. Resistivity and the fraction of 4f electrons increase with increasing value of [V/(E–)]² where (E–) is the distance between the effective positionE of the 4f level and the chemical potential. In typical mixed valence systems [V/(E–)]² is strongly temperature dependent and decreases with increasing temperature. This explains the high temperature resistivity behaviour of CePd₃. For (E–) being small compared to the Debye-temperature the resistivity is enhanced and becomes extremely sensitive to small changes of (E–).Work performed within the research program of the Sonderforschungsbereich 125, Aachen-Jülich-Köln     

Sm填充skutterudite化合物中填充原子扰动效应研究

结合Rietveld结构解析和拉曼光谱对单相多晶的Sm原子填充的skutterudite化合物Sm_yFe_xCo_4-xSb₁₂进行了分析.Rietveld精确化结果表明：Sm_yFe_xCo_4-xSb₁₂化合物具有填充式skutterudite结构,Sm原 关键词： 方钴矿 Rietveld结构解析 拉曼散射 扰动