The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer

We investigated magnetoresistance (MR) and exchange bias properties by annealing in the dual spin valve (SV) with nano-oxide layer (NOL). By analyzing effects of NOL in top and bottom pinned simple SVs, MR enhancement effect of NOL inserted in the bottom pinned layer was higher than that of NOL in the top pinned layer with annealing. By the enhanced specular scattering of electrons by NOL, the MR ratio of dual SV with NOL was increased to 15.5–15.9% with an annealing of 200–250°C. Exchange coupling constant J_ex was improved rapidly as 0.13–0.16 erg/cm² by annealing in the bottom pinned layer, whereas the effect of annealing was not large in the top pinned layer with J_ex of about 0.09–0.116 erg/cm².     

磁场方向调制的InAs量子点分子量子比特

在有效质量近似条件下研究了由两个垂直耦合自组织InAs量子点组成的双电子量子点分子的电子结构，在此基础上利用系统的总自旋提出了一种磁场方向调制的量子比特方案.电子的相关效应可以导致系统的总自旋在0和1之间转换，值得注意的是，通过调节外部磁场的方向来实现这种转换，而不是像以往那样通过改变外部磁场的大小.结果支持利用系统的总自旋作为磁场方向调制的量子比特的可能性，而且因为高质量的垂直耦合量子点分子的制作工艺已经成熟，所以这是一个非常现实的量子比特设计方案. 关键词： 量子点分子 磁场方向调制 量子比特     

Sm(Co,Cu,Fe,Zr)z反磁化过程的微磁学分析

通过微磁学有限元方法研究了微结构对各向异性的Sm(Co,Cu,Fe,Zr)z磁性能的影响， 并 对不同温度下的退磁曲线进行了计算.计算结果表明，矫顽力随着2∶17相晶粒尺寸的增大 而增大，随1∶5晶界相厚度的增大而减小；通过减小晶界相厚度或增大晶粒尺寸可以有效提 高 磁能积.反磁化的物理机制主要为形核机制，主要表现为首先在晶界相形成反磁化核，随 着 磁场的增大反磁化核不断长大，最后导致整个磁体的磁化反转；而当温度升高时，晶界相逐 渐变成非磁性相，使得反磁化核难以形成，因此出现了反常的矫顽力温度依赖关系. 关键词： 微磁学 有限元 微结构 磁性能     

晶粒尺寸对气相沉积薄膜磁取向生长的影响研究

为了研究强磁场下薄膜取向生长规律,采用真空蒸发气相沉积法分别制备了不同磁场方向生长的Zn和Bi薄膜.XRD结果发现磁化率差异较小的Zn薄膜在4T时产生了明显的取向生长,而磁化率差异较大的Bi薄膜在5T磁场强度还没有发生取向生长.SEM结果显示Zn薄膜和Bi薄膜晶粒尺寸上有明显的差别,利用Zn薄膜在4T磁场下的取向建立晶粒尺寸和取向生长的对应关系,提出薄膜发生取向时晶粒的磁化能须大于热能kT的420倍.薄膜是否发生取向生长取决于三个因素:薄膜单个晶粒的大小V,材料不同晶向的磁化率差异Δ关键词： 强磁场 磁取向 薄膜生长 材料电磁加工     

Hyperfine fields in the 5sp series studied by the low temperature nuclear orientation of83Rb,83Sr,85Sr and85Ym in iron

The hyperfine fields B_hf (RbFe), B_hf (SrFe) and B_hf (YFe) have been determined by the low temperature nuclear orientation of dilute samples of⁸³Rb,^83,85Sr and⁸⁵Y^m in an iron lattice to be B_hf (RbFe)=+54 (10) kG, B_hf (SrFe)=(?)100 (30) kG and B_hf (YFe)=?226 (10) kG. These results are compared with recent calculations for these fields (1), (2).     

Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.     

Low temperature dependence of the penetration depth in YBCO thin films revisited by mm wave transmission and surface impedance measurements

We report results obtained with two different experimental set-ups in state-of-the-art YBCO thin films as similar as possible, prepared by pulsed laser deposition on LaAlO₃ substrates: a surface impedance measurement on 4000 ? thick films using a parallel plate resonator (10 GHz), and a far infrared transmission (100-400 GHz) measurement which requires thinner (1000 ?) samples. The former measurement yields the temperature variation of the penetration depth λ(T) and the real part of the conductivity, provided the absolute value of λ(T) is known. The latter yields the imaginary part of the conductivity, hence the absolute value of the penetration depth, as well as its temperature dependence at the measuring frequency. Combining these two experiments, we establish a quasi-linear temperature variation of λ(T), with a 2 ? K^-1 low temperature slope, and a fairly large zero temperature value λ(T = 0)=(1800±200) ? . The scattering rate of the quasi-particles calculated from a two-fluids model shows that the films compare to good quality single crystals, where twice a larger slope has been found. This surprising behavior is described in detail, including an in-depth structural analysis of the samples in order to evaluate their similarities. We find that the 10 GHz data obtained in the thickest films can be fitted to the dirty d-wave mode in the unitarity limit, with an extrapolated slope of 3 ? K^-1, but yield a scattering rate that is difficult to reconcile with the high T _c (92 K) of the films. Received 7 May 2001 and Received in final form 18 October 2001     

Propagation of travelling waves in sub-excitable systems driven by noise and periodic forcing

It has been reported that traveling waves propagate periodically and stably in sub-excitable systems driven by noise [Phys. Rev. Lett. 88, 138301 (2002)]. As a further investigation, here we observe different types of traveling waves under different noises and periodic forces, using a simplified Oregonator model. Depending on different noises and periodic forces, we have observed different types of wave propagation (or their disappearance). Moreover, reversal phenomena are observed in this system based on the numerical experiments in the one-dimensional space. We explain this as an effect of periodic forces. Thus, we give qualitative explanations for how stable reversal phenomena appear, which seem to arise from the mixing function of the periodic force and the noise. The output period and three velocities (normal, positive and negative) of the travelling waves are defined and their relationship with the periodic forces, along with the types of waves, are also studied in sub-excitable system under a fixed noise intensity. Electronic supplementary material Supplementary Online Material     

Electrodynamics of the vortex lattice in untwinned YBaCuO by complex impedance measurements

We report complex impedance measurements in an untwinned YBaCuO crystal. Our broad frequency range covers both the quasi static response and the resistive response of the vortex lattice. It allow us to characterize the irreversibility line without the need of any frequency dependent pinning parameters. We confirm the validity of the two modes model of vortex dynamic, and extract both the surface critical current and the flux flow resistivity around the first order transition T_m. This latter is identified by the abrupt loss of pinning and by an unexpected step of (T) at T_m. Received 22 November 2002 / Received in final form 17 February 2003 Published online 20 June 2003 RID="a" ID="a"e-mail: alain.pautrat@ismra.fr RID="b" ID="b"UMR 6508 associée au CNRS     

Structural characterisation of the silica and alumina Zener pinning phases in nanocrystalline CeO2 by 29Si and 27Al nuclear magnetic resonance

Nanocrystalline CeO₂ samples have been manufactured using sol-gel techniques, containing either 15 % silica or 10 % alumina by weight to restrict growth of the ceria nanocrystals during annealing by Zener pinning. ²⁹Si and ²⁷Al MAS NMR have been used to investigate the structure of these pinning phases over a range of annealing temperatures up to 1000 °C, and their effect on the CeO₂ morphology has been studied using electron microscopy. The silica pinning phase resulted in CeO₂ nanocrystals of average diameter 19 nm after annealing at 1000 °C, whereas the alumina pinned nanocrystals grew to 88 nm at the same temperature. The silica pinning phase was found to contain a significant amount of inherent disorder indicated by the presence of lower n Qⁿ species even after annealing at 1000 °C. The alumina phase was less successful at restricting the growth of the ceria nanocrystals, and tended to separate into larger agglomerations of amorphous alumina, which crystallised to a transition alumina phase at higher temperatures.