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GaAs光电阴极光谱响应曲线形状的变化 总被引:1,自引:0,他引:1
利用光谱响应测试仪测试了反射式GaAs光电阴极在激活过程中以及激活后衰减过程中的光谱响应曲线,测试结果显示在这两个过程中光谱响应曲线形状都在不断发生变化。在激活过程中随着GaAs表面双偶极层的形成,阴极表面有效电子亲和势不断降低,光谱响应则不断提高,但长波响应提高得更快。在激活结束后,位于激活室中受白光照射的GaAs光电阴极由于Cs的脱附影响了双偶极层结构,阴极表面有效电子亲和势不断升高,光谱响应则不断下降,但长波响应下降得更快。上述现象无法用常用的反射式阴极量子效率公式进行解释,它们与阴极高能光电子的逸出有关。由于反射式阴极发射电子能量分布随着入射光子能量的升高而向高能端偏移,同时阴极表面势垒形状的变化对低能电子比对高能电子的影响更大,从而导致了光谱响应曲线形状的变化。 相似文献
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铟封前后透射式GaAs光电阴极光谱响应特性的测试与分析 总被引:2,自引:0,他引:2
利用自行研制的光谱响应测试仪工程化样机,对透射式GaAs光电阴极在高温激活结束、低温激活结束以及铟封成管后的光谱响应特性进行了测试。结果显示,铟封后阴极整个响应波段的光谱响应下降,长波响应受到最显著的影响,表现为800~815 nm之间长波响应大幅度衰减,截止波长和峰值波长向短波移动,峰值响应和积分灵敏度减小,最终的光谱响应曲线变得平坦。阴极参量的计算结果反映铟封后阴极的表面逸出几率降低,说明铟封引起阴极表面激活层发生变化,使得能量较低的长波段光生电子不容易逸出,阴极长波响应和灵敏度随之降低。进一步分析了铟封过程中影响阴极表面激活层的因素。 相似文献
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GaAs光电阴极与景物反射光谱的光谱匹配系数 总被引:3,自引:2,他引:1
本文根据光谱匹配系数的表达式,计算了GaAs光电阴极与暗绿色涂层、粗糙混凝土和绿色草木的光谱匹配系数.在满月光下,其结果分别为0.4519、0.5184 和0.6927;在晴朗星光下,分别为0.5866、0.6125和0.6513并分析比较了GaAs和两种S25光电阴极与景物反射光谱的光谱匹配系数,说明具有良好观测效果的三代夜视仪是与光电阴极与景物反射光谱之间良好的匹配程度分不开的. 相似文献
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研究了New S25与LEP^*光电阴极的光谱响应特性。从理论上分析了光电子逸出深度,光电阴极结构参量和光电阴极厚度对光谱响应特性的影响。并对实用三碱阴极的潜力进行了理论预测。明确指出集New S25与LEP^*之长获得的实用三碱阴极可以和Ⅲ-Ⅴ族NEA阴极媲美。 相似文献
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夜视像增强器(蓝光延伸与近红外延伸光阴极)的近期进展 总被引:4,自引:0,他引:4
20世纪90年代以来,夜视像增强器的研究主要朝着两个方向发展:一是研究对于探测、识别与确认沙漠地带或沙地景物有贡献的蓝光延伸(<550nm)GaAs负电子亲和势(NEA)光阴极,光谱响应向短波长延伸,使光阴极灵敏度、光增益与鉴别率等性能大大优于标准三代管,从而形成“加强三代管”或所谓“四代管”,其探测性能较标准三代管高一倍;二是研究与夜天空辐射较为匹配、对1.06μm激光有较高响应的光阴极,包括研究InGaAs、NEA光阴极(1.0~1.3μm和1.5~2.0μm)和多碱光阴极(1.0~1.1μm)这三类近红外(NIR)像管,可用于主被动夜视。本文综述了这几个方面的进展及其在夜视中的实际应用。 相似文献
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为了研究砷化镓(GaAs)光电阴极光谱响应与吸收率曲线间的关系,采用分子束外延法(MBE)和金属有机化合物化学气相沉积法(MOCVD)制备了两类GaAs光电阴极,并测试得到了样品吸收率和光谱响应实验曲线.对每个样品的这两条曲线在同一坐标系中做最大值归一化处理,将归一的光谱响应曲线与归一的吸收率曲线做除法,得到了类似光电阴极表面势垒的形状.结果表明,两种方法制备的光电阴极光谱响应曲线相比吸收率曲线都发生了红移,MBE样品偏移量稍大于MOCVD样品.短波吸收率不截止,光谱响应截止于500 nm左右;可见光波段上,光谱响应曲线的峰值位置相比吸收率曲线红移了几百meV;近红外区域,光谱响应曲线的截止位置相比吸收率曲线红移了几个meV.MOCVD样品中杂质对带隙的影响更小,光谱响应相比吸收率发生的能量偏移更小.这些结论对提高GaAs光电阴极光电发射性能有指导意义. 相似文献
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测量了不同阱宽In0.2Ga0.8As/GaAs单量子阱的PL谱的峰值波长和荧光谱线半峰全宽随温度的变化。利用Varshni公式对实验峰值波长进行拟合,得到了新的参数。结果表明,无位错应变量子阱带隙仍具有其体材料的特性:荧光谱线半峰全宽随温度升高迅速展宽,这主要归因于声子关联作用增强和激子热离化为自由载流子所致;阱宽越窄荧光峰值能量越高,将其与量子尺寸效应的理论计算结果进行了比较。文中还考察了谱线半峰全宽和阱宽的关系,利用合金无序对这一现象进行了解释。 相似文献
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Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode 下载免费PDF全文
The resolution characteristic can be obtained by the modulation transfer function (MTF) of a GaAs/GaAlAs photocathode.After establishing the theoretical model of GaAs(100)-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers,this paper calculates the trajectories of photoelectrons in a photocathode.Thus the distribution of photoelectron spots on the emit-face is obtained,which is namely the point spread function.The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function.The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length,and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration.Furthermore,the resolution is enhanced considerably by increasing the active-layer thickness,especially at high spatial frequencies.The best spatial resolution is 860 lp/mm,for the GaAs photocathode of doping concentration 1 × 10 19 cm 3,electron diffusion length 3.6 μm and the active-layer thickness 2 μm,under the 633-nm light irradiated.This research will contribute to the future improvement of the cathode’s resolution for preparing a high performance GaAs photocathode,and improve the resolution of a low light level image intensifier. 相似文献
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在有效质量近似下利用打靶法求出Ga1-xInxNyAs1-y/GaAs量子阱中的本征能级En, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga1-xInxNyAs1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义.
关键词:
费米黄金规则
1-xInxNyAs1-y/GaAs量子阱')" href="#">Ga1-xInxNyAs1-y/GaAs量子阱
LO声子
散射率 相似文献
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用选择激发光荧光研究了分子束外延生长的GaAsSb/GaAs单量子阱的光学性质,第一次同时观察到空间直接(Ⅰ类)和间接(Ⅱ类)跃迁.它们表现出不同的特性:Ⅰ类跃迁具有局域化特性,其发光能量不随激发光能量而变;Ⅱ类发光的能量位置随激发功率的增大而蓝移,也随激发光能量的增加而蓝移,复合发光发生在位于异质结GaAs一侧的电子和GaAsSb中的空穴之间,实验结果可以很好地用电荷分离造成的能带弯曲模型来解释,这也是空间间接跃迁的典型特性.还用光荧光的激发强度关系和时间分辨光谱进一步论证了GaAsSb/GaAs能带排列的Ⅱ类特性,并通过简单计算得到了应变和非应变状态下GaAsSb/GaAs异质结的带阶系数. 相似文献
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《Superlattices and Microstructures》1994,15(2):165
Experimental results on high electric field longitudinal transport in GaAs/AlAs and GaAs/Ga1-xAlxAs multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions.(i) In GaAs/Ga1-xAlxAs systems the dominant energy and momentum relaxation mechanism is through scattering with GaAs -modes.(ii) However, in GaAs/AlAs systems the AlAs interface mode is dominant in relaxing the energy and momentum of the quantum well electrons.(iii) The hot electron momentum relaxation as obtained from the high-field drift velocity experiments is strongly affected by the production of hot phonons as expected from a model involving a non-drifting hot phonon distribution.(iv) The importance of the AlAs interface mode in GaAs/Ga1-xAlxAs MQW is not the result of the intrinsic scattering rate but related to its shorter lifetime, compared to GaAs modes. 相似文献
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K. Shinohara Y. Shimizu S. Shimomura Y. Okamoto N. Sano S. Hiyamizu 《Physica E: Low-dimensional Systems and Nanostructures》1998,2(1-4)
Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs)
(AlAs)
quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs)
(AlAs)
QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width (
) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs)
(AlAs)
QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs)
(AlAs)
QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7
7 mm
), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs)
(AlAs)
QWs grown on the (4 1 1)A GaAs substrates. 相似文献
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Satoshi Hiyamizu Keisuke Shinohara Kenji Kasahara Yasuyuki Shimizu Satoshi Shimomura Richard A. Kiehl 《Physica E: Low-dimensional Systems and Nanostructures》1998,2(1-4)
Be-doped GaAs/p-Al
Ga
As QW-HEMT structures with well width of
and 50 nm were simultaneously grown on (4 1 1)A and (1 0 0) GaAs substrates by MBE. Be-doping concentration in the p-Al
Ga
As layer was
, and the undoped Al
Ga
As spacer layer was 6 nm thick. Hole concentration was about
for
nm. Hole mobility at 10 K in the conventional (1 0 0) samples remained almost constant (about 20 000 cm
(V s) for the current in the
direction) with decreasing
down to 7 nm and it rapidly decreased to 2760 cm
(V s) at
nm. On the other hand, in the (4 1 1)A samples, hole mobility (10 K) increased from 17 500 cm
(V s)
nm) to 33 900 cm
(V s)
nm) and dropped rapidly down to 4090 cm
(V s)
nm) for a current direction of
. This significant enhancement of hole mobility in the (4 1 1)A samples is mainly due to (1) the significantly reduced interface roughness scattering of 2DHG when using the (4 1 1)A super-flat interfaces and (2) the reduced effective mass of holes in the narrow (4 1 1)A QWs (
–20 nm). Shubnikov–de Haas (SdH) measurements on the (4 1 1)A QW sample
nm) confirmed the reduced effective mass (0.30
) of holes. 相似文献