水平磁场下硅熔体的有效粘度

用钕铁硼(NdFeB)永磁材料构建"魔环"结构的永磁体,向直拉硅生长的熔体所在空间引入磁感应强度,采用回转振荡法测量不同磁场强度下硅熔体的磁粘度(有效粘度).在温度一定时,粘度随着磁场强度的增加而增加,二者呈抛物线关系.熔硅温度升高,磁场影响加剧,抛物线更加陡峭.1510～1590℃温度区间内,粘度有异常变化.     

半导体硅熔体电导率的间接测量

本文通过在磁场下测定硅熔体的粘度,根据ηeff=(μBb)2σ关系式,间接计算出硅熔体的电导率.其结果与用其他方法测试的数值吻合.用电子导电、离子导电的变化,解释了硅熔体在1420～1690℃范围电导率的变化,研究结果对指导大直径硅单晶生长具有实际意义.     

β—BaB2O4晶态和熔态的分子动力学模拟研究

采用分子动力学模拟方法研究了β－ＢａＢ２Ｏ４晶态和熔态的结构。模拟得到的径向分布函数与配位数和已报道的实验结果相符。在模拟产生的一系列瞬态构型型基础上，采用键序参数方法研究了熔体结构，结果表明，熔体中大量存在ＢＯ３平面三角形基团，而ＢＯ４四矶体基团也少量存在。同时也对熔体中的环和链进行了统计分析，分析表明，体系中Ｂ原子和Ｏ原子构成一一种网络结构。此外，对ＢＯ３基团、ＢＯ４基团和网络结构对晶体生长的     

直拉单晶硅生长时空洞演化的相场模拟

为研究大直径直拉硅生长时空洞的演化规律,建立了与有限元模型所模拟的晶体生长温度场相结合的空洞演化相场模型,并应用该模型模拟研究了空洞形貌及其分布状态的变化过程以及不同初始点缺陷浓度对空洞演化的影响规律.结果表明:直拉硅单晶生长过程中,空洞的演化经历了孕育-形核-长大-稳定四个阶段,其形貌和分布状态亦由孤立的球形向偏聚的串珠形转变;与较低的点缺陷浓度相比,初始点缺陷浓度较高时,空洞的数目、平均尺寸、面积分数普遍较大,孕育阶段缩短、形核和长大阶段延长;空洞的偏聚及合并、长大的现象显著;当温度低于980 K时,大直径的空洞数目不再增加.     

感应加热制备太阳能级铸造准单晶硅熔体流动行为研究

用专业晶体生长软件(CG-Sim)对制备太阳能级准单晶硅用真空感应铸锭炉的热场结构以及在熔炼过程中硅熔体的流动行为进行了研究.结果表明,熔体中电磁力是熔体流动的驱动力之一,并且感应线圈与熔体高度的比值(k)对熔体内电磁力的大小和分布具有很大的影响,当k值为1.2时,熔体内形成一个上下贯通的涡流,有利于杂质的挥发.同时,当感应线圈频率在3000～5000 Hz范围时,熔体对流强度较低,可以增加坩埚-熔体边界层的厚度,降低熔体中的氧含量.     

勾形磁场下多晶硅定向凝固模拟与分析

利用基于有限元的软件COMSOL Muhiphysics对多晶硅定向凝固过程进行了一系列二维数值模拟,研究了勾形磁场(CMF)对多晶硅定向凝固过程的影响.模拟分别在线圈电流设为0A、10 A、20A、30 A和40A的情况下进行.结果表明:CMF能有效抑制熔体的对流,特别是对坩埚侧壁附近的熔体.CMF可以影响结晶时的固液界面,使结晶初期凸形结晶界面变得平滑.电流从0A逐渐均匀增加到40A时,施加于熔体上的磁场也逐渐增加,熔体的最高流速逐渐减小,而且最高流速的减小量呈现出先增加后减小的趋势.     

μ-PD法蓝宝石纤维晶体生长中传热传质的数值模拟

在μ-PD法纤维蓝宝石单晶生长中,利用Comsol软件数值分析了陶瓷管开裂现象、熔体对流和磁场分布.结果表明,试验中陶瓷管保温层总是在距底部0.03 m处断裂,数值模拟发现该处为温度和Von Mises应力最高点位置,验证了数值模拟的准确性;适当增大陶瓷管保温层厚度有利于降低陶瓷管温度,从而降低其开裂概率;熔体对流中Marangoni对流占主导,浮力对流可忽略;磁场分布能够满足μ-PD法蓝宝石晶体生长需求,“趋肤效应”使最高温度位于铱坩埚最上端.     

β′-Gd2(MoO4)3晶体生长中的过冷现象研究

对电阻加热引上法和感应加热引上法生长β′-Gd2(MoO4)3晶体的实验结果进行了比较,分析了两种方法生长晶体过程中熔体过冷和组分过冷的情况.研究认为组分过冷主要与生长过程中MoO3的挥发、Gd2(MoO4)3熔体的粘度及固液界面的温度梯度有关,并认为感应加热引上法较之电阻加热引上法容易得到优质晶体.     

熔体晶体生长的实时观察研究

本文提供了实时观察高温熔体晶全生长的新方法。此方法是将休伦（Ｓｃｈｌｉｅｒｅｎ）技术和微分干涉显微镜（ＤＩＭ）技术相结合，能同时观察到晶体生长中表面动力学过程和生长界面处的输运现象。在ＫＮｂＯ３熔体晶体生长中的生长图案和输运现象首次被同时观察到。改变熔体层厚度和熔体平面方向与重力场方向的夹角，得到了不同的流动形貌。通过阻抑浮力对流，对表面第力对流也进行了观察研究。     

微重力下静态磁场对浮区法硅单晶生长的影响

考虑晶体生长界面的变形,利用有限体积方法对侧面加热的空间全浮区法硅单晶生长中熔区内的热质传输、流场及晶体生长界面位置和形态特征进行了数值研究.应用不同中等强度的轴向磁场和勾型磁场对硅熔体内的热毛细对流进行抑制.分析了静态磁场不同强度下熔区中的对流模式,研究表明,轴向和勾型磁场均能有效抑制熔体内的对流,并将热毛细对流挤压到自由表面附近.轴向磁场可有效抑制熔体的径向流动,但难以有效抑制轴向对流;勾型磁场则可以达到更好的控制熔体对流的效果.对不同强度下的固液面形态及位置分析发现:轴向磁场下固液面基本和无磁场时的重合,但磁场强度较小时固液面在自由表面边缘处向单晶侧有个凸起;勾型磁场作用下的固液面比较平滑,其中心区域较无磁场时整体向z轴正向偏移.研究结果可对浮区法晶体生长中获得高质量晶体提供帮助.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

锶铁氧体凝胶注模成形技术研究

锶铁氧体是重要的永磁材料,但锶铁氧体粉体很难制备高固相含量、低粘度的浆料.本实验通过对锶铁氧体粉进行预还原处理,制备出适用于凝胶注模成形的浆料,并进行了在磁场中及不在磁场中的凝胶注模成形.分析了还原处理工艺对锶铁氧体组成的影响,研究了预还原锶铁氧体浆料的流变特性及其磁场凝胶注模成形对材料性能的影响.结果显示:通过预还原处理,可以制备出固相体积分数达46vo1;的预还原锶铁氧体低粘度浆料;预还原锶铁氧体浆料的磁场凝胶注模成型,不能使锶铁氧体材料的晶粒一致取向.     

Effect of magnetic field on melt flow and crystal growth of oxide crystals

The flow in an oxide melt such as LiNbO, and TiO₂ in a high magnetic field was observed by using magnetic-field-applied Czochralski equipment for oxide crystals. It was found that the flows in oxides melts were very much different from these in a semiconductor melt. The single crystals of TiO₂ were grown in a magnetic field by using this equipment.     

The effect of photo-irradiation in hydrolysis and condensation of silicon alkoxide

A silicon alkoxide-water-ethanol mixed solution was irradiated with ultraviolet rays, and the change of the silicon alkoxide molecular structure was evaluated by ²⁹Si nuclear magnetic resonance and Fourier transform infrared spectroscopies. Silicon alkoxide was hydrolyzed and the Si-OH bonds were produced by UV irradiation without any chemical catalyst for hydrolysis. The Si-O-Si bonds were also produced, and viscosity of the alkoxide solution became higher due to condensation of alkoxide.     

Fe80.8Si7.2B6Nb5Cu非晶/纳米晶磁粉芯软磁性能研究

采用熔体快淬法制备了Fe80.8Si7.2B6Nb5Cu非晶条带,然后经过退火、研磨、成型、退火等一系列的处理,得到了结构致密的非晶纳米晶双相磁粉芯.研究了不同条件下磁粉芯的微观形貌、磁导率、功率损耗、品质因数等基本性能.研究结果表明: Fe80.8Si7.2B6Nb5Cu非晶纳米晶双相磁粉芯具有较高磁导率(36~37) ,且在不同的频率和磁场下比较稳定;低频下(小于200 kHz),当磁场小于50 mT时,其功率损耗最大值仅为49.42 W/kg;同时,有着较好的品质因数.     

Modelling of the isothermal melt flow due to rotating magnetic fields in crystal growth

The use of a rotating magnetic field promises the feature of a contactless flow control in crystal growth especially for configurations where an increase of the material transport in a definite way is desired. This paper gives the comparison of numerically calculated and experimentally obtained results on the flow due to a rotating magnetic field as well as numerical results on the influence of the field parameters (frequency, amplitude) on the fluid flow in the melt.     

用光辅助MOCVD制作巨磁阻薄膜PCMO

用光辅助MOCVD的方法成功地在LAO,Pt/Ti/SiO2/Si,Pt/LAO等不同的衬底上生长出巨磁阻材料PCMO,并且在室温无磁场的环境中观察到由脉冲电压诱导其电阻可逆变的效应(称为EPIR效应).实验证实,用此方法制备出的PCMO薄膜受到一定的脉冲电压驱动时,其电阻值可以增大,也可以减少,与所施加的脉冲极性有关,并且电阻值变化的大小与脉冲的数量有一定的关系,可以用多值的方式来记录和存储信息.这表明,用光辅助MOCVD制作的PCMO薄膜也具有可擦可写的,多值的存储信息的功能.可以被开发为高速读写,大容量的非易失性存储器,具有广阔的应用前景.     

Melt stirring effect of a weak magnetic field on crystal growth

Melt stirring effect of a weak magnetic field for the natural convection of liquid metal in an electrically adiabatic cubic enclosure heated from one vertical wall and cooled from an opposing wall was studied by a fully transient three-dimensional numerical analyses and the reasoning for melt stirring effect was clarified from the numerical results. Similar techniques were applied for the melt convection in a cylindrical Czochralski crystal growing crucible with an application of a vertical magnetic field. In a static crucible, central fluid column rotated in a magnetic field and in a rotating crucible, central fluid column did not rotate in a magnetic field. These peculiar characteristics could have been explained due to the Lorentz force.     

Influence of magnetic field on the nucleation rate control of mono paracetamol

Crystallization of paracetamol was carried out under magnetic field in pure aqueous solution at ambient condition for the first time. Solutions at different supersaturation levels σ = 0.28–1.6 were exposed to various magnetic flux densities in the range 160–510 Gauss and the grown crystals were compared with that grown in the absence of magnetic field. Both in the absence and presence of magnetic field, solution yields only stable mono paracetamol and does not favors the metastable ortho polymorph at all supersaturation levels. The presence of magnetic field reduces the rate of crystal nucleations as well as modifies the habit of the nucleated mono paracetamol. Crystals obtained in the presence of magnetic field were of good quality and highly transparent as compared to the crystals grown in the absence of magnetic field. The induction period of the nucleation in solution decreases significantly with increase in magnetic flux density at all supersaturation ranges. The internal structure and thermal stability of the grown paracetamol crystal was confirmed by PXRD and DSC analysis.     

高性能氮化硅陶瓷凝胶注模成型的研究

凝胶注模成型工艺的关键在于制备低粘度高固相体积含量的陶瓷浆料.本文以四甲基氢氧化铵(TMAH)溶液为分散剂制备氮化硅陶瓷浆料,研究了pH值、分散剂含量、助烧剂含量以及固相体积含量对氮化硅浆料流变性的影响;测定了凝胶注模成型素坯以及烧结体的力学性能.研究结果表明:当pH＝10.5,分散剂加入量为6;(相对于氮化硅固相体积比),助烧剂加入量为10;(质量分数)时,浆料具有最好的流变性.根据以上制备的工艺参数,制备得到固相体积含量大于50;,具有良好流变性的浆料.铸模成型干燥后,素坯的抗弯强度达27MPa;常压烧结后氮化硅陶瓷具有优异的力学性能,其抗弯强度为730 MPa,断裂韧性高达8.8 MPa·m1/2.