Impurity photoconductivity in strained <Emphasis Type="Italic">p</Emphasis>-InGaAs/GaAsP heterostructures

The impurity-photoconductivity spectrum is observed for strained quantum wells of the p-InGaAs/GaAs solid solution at T= 4.2 K. In addition to the broad photoconductivity band attributed to the transitions from the acceptor ground state to the continuum of the first size-quantization subband, the spectrum exhibits a peak due to the transitions from the ground state to the excited localized acceptor state, a band corresponding to the transitions to the resonance states associated with the second heavy-hole size-quantization subband, and a narrow photoconductivity peak (Fano resonance) in the spectral range corresponding to the optical-phonon energy.     

Theory of the Fano resonance in impurity excitation spectra of <Emphasis Type="Italic">p</Emphasis>-GaAs

The features observed in the impurity photoconductivity spectra of gallium arsenide doped with shallow acceptors have been described theoretically. The features are caused by the interaction of holes with polar optical phonons. The Fano resonances associated with both the ground and excited acceptor states have been considered. The calculated widths of the resonances are in agreement with available experimental data.     

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

The stimulated emission spectrum of uniaxially strained p-Ge is presented. The energy spectrum of the states of a shallow acceptor in Ge under uniaxial compression is calculated. The threshold pressure at which the acceptor state split off from the ground state becomes resonant is found. The pressure dependence of the width of this resonant level is calculated. The stimulated emission lines are identified. In particular, it is shown that the principal emission peak corresponds to the transition of holes from the resonant 1s (1s _r) state to the local p _±1 state. The probabilities of optical transitions are calculated. A mechanism of population inversion due to the intense resonant scattering of hot holes with an energy corresponding to the position of the 1s _r level is proposed. Zh. éksp. Teor. Fiz. 115, 89–100 (January 1999)     

Doubly excited 2s2p 1,3P1 resonances in photoionization of helium

The multi-configuration Dirac-Fock（MCDF） method is implemented to study doubly excited 2s2p ^1,3P₁ resonances of the helium atom and the interference between photoionization and photoexcitation autoionization processes.In order to reproduce the total photoionization sprectra,the excited energies from the ground 1s^{2 1}S₀ state to the doubly excited 2s2p ^1,3P₁ states and the relevant Auger decay rates and widths are calculated in detail.Furthermore,the interference profile determined by the so-called Fano parameters q and ρ² is also reproduced.Good agreement is found between the present results and other available theoretical and experimental results.This indeed shows a promising way to investigate the Fano resonances in photoionization of atoms within the MCDF scheme,although there are some discrepancies in the present calculations of the 2s2p ³P₁ state.     

Electron-Plasmon Interaction in Bismuth with an Acceptor Dopant

In the study of bismuth and bismuth-antimony alloy crystals with tin acceptor dopant, specific features of the spectra of plasma reflection of polarized infrared radiation are detected together with a difference between the static and optical relaxation times. It is established that the specific features in the behavior of optical functions and the maximum difference between the static and optical relaxation times are observed in crystals with the gap energy at point L of the Brillouin zone E _gL comparable to the plasma oscillation energy E _p. The amount of tin acceptor dopant in bismuth is found at which the above-indicated energies become close in values and the condition E _p = E _gL is satisfied.     

Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s _3/2(Γ₈) → 2s _3/2(Γ₈) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 10⁸ cm⁻³) and in a doped p-InP crystal (p=3.6×10¹⁷ cm⁻³). Moreover, a new line, associated with the transition 1s _3/2(Γ ₈) → 2p _3/2(Γ₈) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998)     

A low-lying resonance in the spectrum of H

It was proved by Pekeris⁽¹⁾ that the singly excited states of H^- lie exactly at, or slightly above, the ground state of hydrogen. Using a theory of Fano,⁽²⁾ these fictitious states will have a configuration interaction with the H^- continuum. The strength of this configuration interaction is computed for the mixing of a 1s2p¹P⁰ state with the H^- continuum for different values of the fictitious binding energy of the 2p valence electron. In every case, the effect of the configuration interaction is to induce a rapid change of the phase shift of the continuum wave function by a quantity of π/2 over an energy range of a few times 0.01 eV, at an energy somewhat above the hydrogen ground state. The variation from π/2 to π is much slower. Such a swift change of the phase shift may be identified with the occurrence of a low-lying shape resonance.     

Total strength of the magnetic dipole resonance in <Superscript>31</Superscript>P

The γ decay of the resonance-like structure observed in the ³⁰Si(pγ)³¹P reaction in the energy range E _p = 1.4–2.7 MeV of accelerated protons has been investigated. The excitation function of this reaction and the spectra and angular distributions of the γ rays formed in the decay of resonances with E _p = 1482, 2350, and 2505 keV have been measured. The M1 resonance on the ground and the first excited states of ³¹P with E _p = 1266 keV is identified. The total strength of the M1 resonance on the ground state of this nucleus is determined. The position and total strength of this resonance on the ground state are explained taking into account pairing forces.     

Band-gap bowing and p-type doping of (Zn,Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N_O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.     

States of hydrogen in crystalline semiconductors

Abstract

The stable configurations of hydrogen in undoped, and in n- and p-semiconductors are reviewed. We compare the experimentally determined configurations with theoretical predictions made by a variety of calculational methods. In undoped Si, as an example, hydrogen appears to occupy a energy occurring at a tetrahedral interstitial (T) site. In B-doped, p-type Si, hydrogen at a near BC site accounts for acceptor passivation. By contrast in n-type Si, hydrogen at the antibonding (AB) position appears to be responsible for donor passivation. The possible configurations in other semiconductors (Ge, GaAs and AlGaAs) are also summarized.     

Photoelectron and photoion spectroscopy on atomic Lu in the region of the 5p excitation

The resonances of atomic Lu have been investigated by photoelectron and photoion spectroscopy using monochromatized synchrotron radiation in the vacuum ultraviolet energy region. The total photoion yield has been compared to calculations in which the extended Fano theory (Mies formalism) and the Hartree-Fock method were applied. The resonance structure is dominated by the spin-orbit splitting of the 5p core hole. In the photoion yield spectra of singly and doubly charged ions a high fraction of Lu²⁺ ions has been found in the region of the 5p ^-1 (² P _1/2 )nd resonances. Photoelectron spectra, recorded in this resonance region, have been investigated with respect to deexcitation channels connected with Lu²⁺ ions. The 5p ^-1 (² P _1/2 )nd resonances predominantly autoionize by spin-flip into states, which decay in the second step into Lu²⁺ final ionic states. Received: 2 September 1998 / Accepted: 17 September 1998     

Resonant states of shallow acceptors in uniaxially deformed germanium

The states of shallow acceptors in uniaxially deformed germanium are studied theoretically. A non-variational numerical computational method is developed for determining the energy and wave functions of localized states of holes in the acceptor field as well as the states of the continuous spectrum (including resonant impurity states). The dependence of the energy of the lower resonant state on strain is studied. It is found that this state is formed from the excited 4Γ ₈ ⁺ state with a binding energy of 1.3 meV (in the absence of deformation) and not from the ground state. The results presented in this work may be useful in the study of the conditions for the generation of far IR radiation in deformed p-Ge, which involves optical transitions between resonant and localized acceptor states.     

TICT excited states of o‐ and p‐N,N‐dimethylamino analogues of GFP chromophore

Even though all the p‐N,N‐dimethylaminobenzonitrile (p‐DMABN), cis‐o‐DMABDI, and cis‐p‐DMABDI (the N,N‐dimethylamino analogues of green fluorescence protein chromophore) have the same electron‐donating N,N‐dimethylamino group, unlike the dual fluorescence of p‐DMABN, both cis‐o‐DMABDI and cis‐p‐DMABDI display single fluorescence. To figure out the interesting phenomena, the CAM‐TD‐B3LYP method and the cc‐pVDZ basis set were used to explore geometries, molecular orbitals, electronic transition, dipole moment, and potential energy surfaces of the S₁ excited states of cis‐o‐DMABDI and cis‐p‐DMABDI. We found that the S₁ excited states of cis‐o‐DMABDI and cis‐p‐DMABDI are ¹(π, π*) charge transfer excited states with twisted structures, where the N,N‐dimethylaminobenzene moiety functions as an electron donor, the methyleneimidazolone moiety serves as an electron acceptor, and the electron donor is linked with the electron acceptor by the C─C single bond (P‐bond). The fluorescent emissions of cis‐o‐DMABDI and cis‐p‐DMABDI predicted by the CAM‐TD‐B3LYP/cc‐pVDZ level are quite consistent with the experimental results. For the cis‐o‐DMABDI and cis‐p‐DMABDI, the S₁ locally excited state is less stable than the S₁ twisted intramolecular charge transfer state, and the S₁ LE state is not a stationary point (global minimum). That is why both cis‐o‐DMABDI and cis‐p‐DMABDI display single fluorescence.     

Compensating effects of platinum in n- and p-type silicon

Spreading resistance measurements have been used to investigate compensating effects of ion-implanted and diffused platinum in both n- and p-type silicon. The conversion resistivity-platinum concentration has been obtained by solving the charge neutrality condition, which requires a knowledge of the entropy factors associated to the ionization of the two energy levels introduced by the platinum inside the silicon bandgap. We have measured entropy factor values of 25±2 and of 2±0.3 for the donor and the acceptor level, respectively, and by using these values the silicon resistivity versus platinum concentration has been calculated for different values of the substrate dopant concentration. As the platinum acceptor level is shallower than the corresponding level introduced by gold doping, a large difference in the resistivity increase induced by the two elements in n-type silicon is expected. We will show that this large difference is however smoothed by the different values of the corresponding entropy factors.     

Physical nature of anomalous optical transmission of thin absorptive corrugated films

The enhancement of p-polarized light transmittance through periodically relief thin absorptive film on dielectric or semiconductor substrate was considered theoretically. The calculation of transmittance/reflectance was performed in the framework of modified differential formalism method. Numerical results obtained for noble metals (Au, Ag and Cu) under arbitrary relief correlation between two sides of film allow ascertaining physical nature of surface electromagnetic fields responsible for the enhancement transmittance effect. These are Fano, Zenneck-Sommerfeld and Brewster modes on the interfaces with absorbing medium. For anticorrelated reliefs of opposite film surfaces the bound of their modes was found especially effective. The article is published in the original.     

Additional symmetry for the electronic shell in its ground state and many-electron effects

The additional symmetry for the properties related to the ground state of the atom is considered taking into account many-electron effects. Calculations of the I _4f, I _3d,I _2p,I _3p binding energies, 4f ^N-15d - 4f^N system differences and 2p, 3p electron affinities in the second order of perturbation theory and in the configuration interaction approximation have been performed for the ground configurations with one open shell. The analysis of separate many-electron corrections for these quantities and their variation along the sequences of atoms and ions shows that the main corrections maintain the considered symmetry. Received 18 January 1999 and Received in final form 17 July 1999     

On the production mechanism of MF-HF radiopulses associated with large extensive air showers

Summary The existing theories on radio-emission from extensive air showers (EAS) are inadequate to explain the observed high fields associated with the emission of LF-MF-HF radiopulses. One of the attempts has been to explain the phenomenon in the light of the transition radiation (TR) mechanism from the excess negative charge of EAS on striking the ground. However, experimental data are very meagre. In order to concretise the theoretical basis of LF-MF-HF emission, experimental investigations on different aspects of radio-emission are essential. The present paper reports the experimental studies on radio-emission at some preselected frequencies (LF-HF) using a sophisticated data acquisition system. Results on i) variation of field strength with age parameter (S) for different primary energies (E _p) and different core distance (R), ii) lateral distribution of field strength for differentE _p andS and iii) frequency spectrum of radio-emission, are presented and analysed in the light of the TR mechanism.     

Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

We use the data on the pressure (up to P=1.5 GPa) and field (up to H=17 kOe) dependence of the Hall coefficient and the resistivity at 77.6 and 300 K in p-CdSnAs₂〈Cu〉 to calculate the effective kinetic characteristics of the charge carriers, the density and mobility of the conduction electrons and the holes of the deep acceptor and valence bands, in an interval of excess-acceptor densities N _ext ranging from 10¹⁰–10¹⁷ cm⁻³. We establish that in a heavily doped semiconductor with a deep impurity band at the tail of the density of states of the intrinsic band, with unequal donor and acceptor densities, a a heavily doped and fully compensated semiconductor state is realized under hydrostatic compression. The threshold value of the pressure that initiates the transition into such a state, P _c, depends on the extent to which the impurity band is populated. In p-CdSnAs₂〈Cu〉 at N _ext=N _A, where N _A is the density of deep acceptors, and T⩽77.6 K the value of P _c amounts to 10⁻⁴ GPa. As the population of the deep acceptor band grows, P _c increases and in the limit becomes infinite. We discuss the special features of the electrophysical properties of p-CdSnAs₂〈Cu〉 arising from the absence of an energy gap between the states of the conduction band and those of the deep acceptor band. Zh. éksp. Teor. Fiz. 111, 562–574 (February 1997)     

Sub-Poissonian radiation of a one-atom two-level laser with incoherent pumping

The quantum statistical properties of the radiation of a one-atom two-level laser with incoherent pumping are analyzed. Solution of the Liouville equation for the density operator in the basis of Fock states shows that stationary radiation from a single-mode laser with incoherent pumping can be in a squeezed (sub-Poissonian) stationary state if the rate of spontaneous decay is lower than the rate of cavity losses and the pump rate. Inside the cavity the Fano factor reaches F=0.85 (15% squeezing). Multiple squeezing (F=0.19) is possible in the transient lasing regime. Significant squeezing obtains at the cavity output; the spectral Fano factor at zero frequency is 0.36 under optimal conditions. Zh. éksp. Teor. Fiz. 115, 1210–1220 (April 1999)