Structural and optical properties of CdS thin films

CdS thin films are deposited onto glass substrates by vacuum evaporation at 373 K and the films are annealed at different temperatures. Rutherford backscattering spectrometry (RBS) and X-ray diffraction techniques are used to determine the thickness, composition, crystalline structure and grain size of the films. The films show a predominant hexagonal phase with small crystallites. The optical band gap of the films are estimated using the optical transmittance measurements. A decrease in the band gap is observed for the annealed films. The Raman peak position of the CdS A₁ (LO) mode did not change much whereas, the full width at half maximum (FWHM) is found to decrease with annealing.     

Effects of nitrogen doping on optical properties of TiO2 thin films

The potential for extending the optical absorption range of TiO₂ by doping with nonmetallic elements was examined in nitrogen-containing TiO₂ thin films. Thin films of TiO_2-xN_x were synthesized on glass and silicon substrates by ion-beam-assisted deposition to obtain a wide range of nitrogen concentrations. The compositions of the films were determined by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The structures of the films were analyzed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The optical properties of the films were measured by UV-Vis spectroscopy and ellipsometry. A characteristic decreasing trend in band-gap values of the films was observed within a certain range of increasing dopant concentrations. As the nitrogen concentration increased, the structure of the films evolved from a well-defined anatase to deformed anatase. The reduced band gaps are associated with the N 2p orbital in the TiO_2-xN_x films. PACS 78.66.-w; 78.20.Ci     

Structural and optical properties of thermally evaporated thin films

Chalcogenide glass Se₅₅Ge₃₀As₁₅ have amorphous structure in both as-deposited and annealed conditions. The optical properties of the as-deposited and annealed films were studied using spectrophotometric measurements of transmittance, T(λ), and reflectance, R(λ), at normal incidence of light in the wavelength range 200–2500 nm. Neither annealing temperature nor film thickness can influence spectral response on refractive index and absorption index of films. The type of electronic transition responsible for optical properties is indirectly allowed transition with energy gap of 1.94 eV and phonon energy of 40 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The width of band tails of localized states into the gap (ΔE), the single oscillator energy (E_o), the dispersion energy (E_d), the optical dielectric constant (ε_∞), the lattice dielectric constant (ε_L), the plasma frequency (ω_p) and the free charge carrier concentration (N) were estimated.     

Structural characterization and optical properties of ZnSe thin films

Zinc selenide (ZnSe) thin films (d = 0.11-0.93 μm) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. Their structural characteristics were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The experiments showed that the films are polycrystalline and have a zinc blende (cubic) structure. The film crystallites are preferentially oriented with the (1 1 1) planes parallel to the substrate surface. AFM images showed that the films have a grain like surface morphology. The average roughness, R_a = 3.3-6.4 nm, and the root mean square roughness, R_rms = 5.4-11.9 nm, were calculated and found to depend on the film thickness and post-deposition heat treatment.The spectral dependence of the absorption coefficient was determined from transmission spectra, in the range 300-1400 nm.The values of optical bandgap were calculated from the absorption spectra, E_g = 2.6-2.7 eV.The effect of the deposition conditions and post-deposition heat treatment on the structural and optical characteristics was investigated.     

Structural and optical properties of sputtered ZnO thin films

Zinc oxide (ZnO) and aluminium-doped zinc oxide (ZnO:Al) thin films were prepared by RF diode sputtering at varying deposition conditions. The effects of negative bias voltage and RF power on structural and optical properties were investigated. X-ray diffraction measurements (XRD) confirmed that both un-doped and Al-doped ZnO films are polycrystalline and have hexagonal wurtzite structure. The preferential 〈0 0 1〉 orientation and surface roughness evaluated by AFM measurements showed dependence on applied bias voltage and RF power. The sputtered ZnO and ZnO:Al films had high optical transmittance (>90%) in the wavelength range of 400-800 nm, which was not influenced by bias voltage and RF power. ZnO:Al were conductive and highly transparent. Optical band gap of un-doped and Al-doped ZnO thin films depended on negative bias and RF power and in both cases showed tendency to narrowing.     

Influence of oxygen vacancies on optical properties of anatase TiO2 thin films

This paper presents an investigation into the relaxation process of photo-excited carriers in anatase TiO₂ thin films, in which the concentration of oxygen vacancy is controlled by annealing at various temperatures in an oxygen atmosphere. The influence of oxygen vacancies on absorption spectra, photoluminescence (PL) spectra, and PL decay dynamics are discussed.     

Structural and optical properties of chromotrope 2R thin films of different thicknesses

Chromotrope 2R (CHR) films of different thicknesses have been prepared using spin coater. The material has been characterized using FT-IR, DTA and X-ray diffraction. The XRD of the material in powder and thin film forms showed polycrystalline structure with triclinic phase. Preferred orientation at the (1 1 4) plane is observed for the deposited films. Initial indexing of the XRD pattern was performed using “Crystalfire” computer program. Miller indices, h k l, values for each diffraction line in X-ray diffraction (XRD) spectrum were calculated and indexed for the first time. The DTA thermograms of CHR powder have been recorded in the temperature range 25–350 °C with different heating rates. The spectra of the infra-red absorption allow characterization of vibration modes for the powder and thin film. The effect of film thickness on the optical properties has been studied in the UV-visible-NIR regions. The films show high transmittance exceeding 0.90 in the NIR region λ > 800 nm. The intensity of the absorption peaks for λ < 800 nm are enhanced as the film thickness increase. The absorption bands are attributed to the (π–π*) and (n–π*) molecular transitions. The optical properties have been analyzed according to the single-oscillator model and the dispersion energy parameters as well as the free charge carrier concentration have been determined. The optical energy gap as well as the oscillator strength and electric dipole strength have been calculated.     

Structural and optical properties of electrodeposited molybdenum oxide thin films

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO₂ conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO₂. Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 °C for 1 h resulted into polycrystalline MoO₂ with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed.Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere.     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

Effects of 1064 nm laser on the structural and optical properties of nanostructured TiO2 thin film

TiO₂ thin film has been widely used as photoelectrode in dye-sensitized solar cells. It can also be used in quantum dot synthesized solar cells. Study of its effects in different spectrum of light is important for its use in solar cells. We have reported effects of 1064 nm laser on the surface morphology, structural and optical properties of nanostructured TiO₂ thin film deposited on glass substrates using sol-gel spin coating technique. Q-Switched Nd:YAG pulsed laser at various power densities is used in this study. Surface morphology of the film is investigated using X-ray diffraction (XRD) and atomic force microscopy technique. The XRD pattern of as deposited TiO₂ thin film is amorphous and after laser exposure it became TiO₂ anatase structure. Atomic force microscopy of the crystalline TiO₂ thin film shows that the grain size increases by increasing laser power density. The calculations of the band gap are carried out from UV/Visible spectroscopy measurements with JASCO spectrometer. For laser power density of 25 MW/cm² there is an increase in the transmission and it decreases at the value of 38 MW/cm² and band gap decreases with increasing laser power density. Photoluminescence spectra of the crystalline TiO₂ thin film indicate two broad peaks in the range of 415 and 463 nm, one for band gap peak (415 nm) and other for oxygen defect during film deposition process.     

Thickness dependent optical dispersion parameters and nonlinear optical properties of nanostructured Cr doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by reactive DC magnetron sputtering with varying film thickness from 250 to 400 nm. XRD studies reveal that the films exhibit cubic structure with preferred orientation along the (2 0 0) plane. The optical transmittance of the films decreases from 92 to 72%, whereas the optical energy band gap of the films decreased from 2.88 to 2.78 eV with increasing film thickness. The Wemple–DiDomenico single oscillator model has been used to evaluate the optical dispersion parameters such as dispersion energy (E_d), oscillator energy (E_o), static refractive index (n_o) and high frequency dielectric constant (ε_∞). The nonlinear optical parameters such as optical susceptibility (χ⁽¹⁾), third order nonlinear optical susceptibility (χ⁽³⁾) and nonlinear refractive index (n₂) of the films were also determined.     

Optical properties of nanostructured InSe thin films

Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity. The optical properties of nanocrystalline thin films of InSe were studied using spectrophotometric measurements of transmittance, T, and reflectance, R, at normal incidence of light in the wavelength range 200–2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in InSe films is indirect allowed with a value of energy gap equals to 1.10 eV, which increased to 1.23 eV upon annealing.     

Structure and physical-mechanical properties of nanostructured thin films

The structure and mechanical properties of nanostructured thin films based on carbides, nitrides, and borides of transition metals are described. The mechanisms of localized deformation of the films during indentation are compared. It is shown that the tendency of a material to form shear bands during deformation can be predicted using the parameter H³/E², which describes the resistance of the material to plastic deformation. The columnar structure of the films is found to play an important role during deformation, which proceeds via slipping of columnar structural elements along the direction of an applied load.     

Structural and optical properties of thermally evaporated antimony telluride thin films

Antimony telluride thin films were prepared on the well-cleaned glass substrates under a pressure of 10 – 5 torr by thermal evaporation method. The thicknesses of the films were measured using Multiple Beam Interferometer (MBI) technique. The structure of the sample was analyzed by X-ray diffraction technique. The film attains crystalline structure as the temperature of the substrate is increased to 373 K. The d spacing and the lattice parameters of the sample were calculated. Optical behavior of the film samples with the various thicknesses was analyzed by obtaining their transmittance spectra in the wavelength range of 400 – 800 nm. The transmittance is found to decrease with increase in film thickness and also it falls steeply with decreasing wavelength. The optical constants were estimated and the results are discussed. The optical band gap energy decreases with increase in the film thickness. The optical transition in these films is found to be indirect and allowed. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Structural and optical properties of pulsed laser deposited ZnO thin films

Nanocrystalline ZnO thin films were grown by means of pulsed laser deposition. The ablation process was carried out at relatively low background oxygen gas pressure (10 Pa) and by varying the substrate temperature up to 600 °C. Information on the structural and morphological properties of the deposited thin films have been obtained by means of X-ray photoelectron, Raman spectroscopies, X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that all the deposited films are sub-stoichiometric in oxygen and with a hexagonal wurtzite crystalline structure, characterized by features of some tens of nanometers in size. An improvement of the films' crystalline quality was observed for the deposition temperature of 300 °C while the further increase of the deposition temperature up to 600 °C induces a worsening of the material's structural properties with the development of a large amount of nanoparticle's clusters. The analysis of the XRD patterns shows a growth crystallographic preferential direction as a function of the deposition temperature, in agreement with the appearance of the only E₂ optical phonon mode in the Raman spectra. Such findings are compatible with the changes observed in the photoluminescent (PL) optical response and was related to the modification of the ZnO thin film structural quality.     

Structural study of TiO2 thin films by micro-Raman spectroscopy

The Raman spectroscopy method was used for structural characterization of TiO₂ thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.     

退火对TiO2薄膜形貌、结构及光学特性影响

利用射频磁控溅射技术在熔融石英基片上制备TiO<,2>薄膜,采用X射线衍射、扫描电子显微镜(SEM)、拉曼光谱以及透过谱研究了退火温度和退火气氛对TiO<,2>薄膜的结构、形貌和光学特性的影响.实验结果表明:在大气环境下退火,退火温度越.高,薄膜晶化越好,晶粒明显长大,温度高于700℃退火的薄膜,金红石相已明显形成.实验还发现,退火气氛对金红石相的形成是非常重要的,拉曼光谱反应出Ar气氛退火,抑制了金红石晶相的发育,薄膜仍以锐钛矿相为主.Ar气氛退火的薄膜在可见光范围内的透过率比大气退火的要低,并且由透过率曲线推知:金红石的光学带隙约为2.8 eV,比锐钛矿的光学带隙小0.2 eV.     

Optical and morphological properties of N-doped TiO2 thin films

Nitrogen doped titanium dioxide (TiO₂) thin films were deposited by RF magnetron sputtering onto various substrates. The films were prepared in plasma of argon, oxygen, and nitrogen, with varying the nitrogen content, from 0% up to 70%. The resulting TiOx–Ny films were found to consist of cubic TiN osbornite and tetragonal TiO₂ rutile phases. Using optical spectroscopy with large spectral range from 350 to 1000 nm, the band gap width was determined and a narrowing of the optical gap from 2.76 to 2.32 eV was observed as a function of the N-content. It was found that the optical properties of the TiOx–Ny layers are influenced by the surface morphology, roughness, surface energy and phase content. The chemical composition, the crystalline structure, the surface morphology and the surface energy were thoroughly studied by the Rutherford backscattering spectrometry (RBS), grazing-angle XRD, atomic force microscopy (AFM) and contact angle measurements (wettability), respectively.     

Structural, electrical, and optical properties of ZnInO alloy thin films

Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.     

Structural and optical properties of YSZ thin films grown by PLD technique

We report on the structural and optical properties of yttria stabilized zirconia (YSZ) thin films grown by pulsed laser deposition (PLD) technique and in situ crystallized at different substrate temperatures (T_s = 400 °C, 500 °C and 600 °C). Yttria-stabilized zirconia target of ∼1 in. diameter (∼95% density) was fabricated by solid state reaction method for thin film deposition by PLD. The YSZ thin films were grown on an optically polished quartz substrates and the deposition time was 30 min for all the films. XRD analysis shows cubic crystalline phase of YSZ films with preferred orientation along 〈1 1 1〉. The surface roughness was determined by AFM for the films deposited at different substrate temperatures. The nano-sized surface roughness is found to increase with the increase of deposition temperatures. For the optical analysis, a UV-vis-NIR spectrophotometer was used and the optical band gap of ∼5.7 eV was calculated from transmittance curves.