Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

The authors report the deposition of Cu₂O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm², respectively. With proper sputtering parameters, the deposited Cu₂O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu₂O/n-ZnO nanowires with a rectifying current–voltage characteristic. Furthermore, the fabricated coaxial p-Cu₂O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.     

TiO2微图纹结构的制作

用软刻蚀技术中具有代表性的方法———微模塑法和转移微模塑法 ,在普通光学玻璃表面成功制备出TiO2 微阵列结构 .首先 ,以钛酸四丁酯为前驱物 ,通过溶胶 凝胶法合成出TiO2 溶胶 ,然后用表面带有微图纹的有机硅橡胶PDMS作为弹性印章分别对所制得的TiO2 溶胶进行微模塑及转移微模塑加工 ,在 70℃下溶胶凝胶 ,进而让凝胶材料在 5 5 0℃下焙烧 2h得到TiO2 微结构 .用光学显微镜对所得到的微结构进行了显微观察 ,显微照片显示 ,微模塑法和转移微模塑法在制备材料微结构方面复制精细度和重复率都比较令人满意 .同时 ,还初步探讨了影响最终图纹复制效果的凝胶温度、外加压力及模板等因素     

二氧化硅气凝胶微球制备技术

 采用悬浊液成球技术制备低密度二氧化硅气凝胶微球，介绍了TEOS的水解、缩聚过程，主要论述了悬浊液成球技术、密度匹配技术、老化时间对微球性能，特别是收缩对微球密度的影响。实验制备了密度分别为70,100,150,200mg/cm³四种小球，结果表明：熟化时间取6d，制得的微球直径为0.1~2mm,密度为50~500mg/cm³,非球形参数为1.8%。     

二氧化硅气凝胶微球制备技术

采用悬浊液成球技术制备低密度二氧化硅气凝胶微球,介绍了TEOS的水解、缩聚过程,主要论述了悬浊液成球技术、密度匹配技术、老化时间对微球性能,特别是收缩对微球密度的影响。实验制备了密度分别为70,100,150,200mg/cm3四种小球,结果表明：熟化时间取6d,制得的微球直径为0.1~2mm,密度为50~500mg/cm3,非球形参数为1.8%。     

Fabrication of SiO2 microdisk optical resonator

The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 × 104 is fabricated with photolithographic techniques. Reactive ion beam etching (RIBE) is used to get the silica disks with photoresist masks on SiO2/Si made by standard ultraviolet (UV) photolithography,and spontaneous silicon etching by XeF2 is used to fabricate the silicon micropillars. This fabrication process can control the microcavity geometry, leading to high experiment repeatability and controllable cavity modes. These characteristics are important for many applications in which the microcavity is necessary, such as the quantum gate.     

Fabrication and characterization of In2O3 nanowires

In₂O₃ nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations and the electron-diffraction (ED) pattern reveal that the In₂O₃ nanowires are formed by the stacking of (2) planes along the [1] direction, which is parallel to the wire axis. A strong and wide ultraviolet (UV) emission band centered at around 392 nm is observed for the first time in the room-temperature photoluminescence measurement in addition to the usual blue emission (468 nm). Moreover, five discrete fine peaks (372 nm, 383 nm, 406 nm, 392 nm and 413 nm) are further identified in this broad UV band. Received: 10 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002     

Patterned horizontal growth of ZnO nanowires on SiO2 surface

We report patterned horizontal growth of ZnO nanowires on SiO₂ surface for the study of electrical and luminescent characteristics of individual nanowires and for device applications. Patterns of gold catalytic seed islands with barrier layers which suppress vertical growth were employed to facilitate horizontal growth on SiO₂ surface. After the growth, ZnO nanowire devices are fabricated by patterning electrodes aligned over the seed islands and their device characteristics are investigated. We could also investigate history of synthesis conditions by obtaining local luminescence characteristics along individual nanowires.     

Sol-Gel derived CeO2:TiO2 coatings for electrochromic devices

Thin films of mixed CeO₂-TiO₂ with different Ce/Ti mole ratios were prepared following an alcohol based sol-gel route via the spin coating technique using mixed inorganic-organic [CeCl₃.7H₂O and Ti(OPr)₄] precursors. Ion storage capacity for films obtained from aged sols was observed to be high. Enhanced titanium oxide content improved the insertion capacity of the corresponding films as was evident from inserted charge determined by multiple step chronoamperometric measurements. Electrochemical, optical, structural and thermal performances showed the suitability of the films in an all solid state electrochromic (transmissive) device with tungsten trioxide (WO₃) as electrochromic material and a conductive polymeric electrolyte based on lithium. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

The photoluminescence properties of TiO2-sheathed ZnSe nanowires

ZnSe nanowires have been synthesized by thermal evaporation of ZnSe powders on gold-coated Al₂O₃(0 0 0 1) substrates and then sheathed with TiO₂ by sputtering. Our results show that sheathing Zn nanowires with thin TiO₂ layers can significantly enhance the photoluminescence (PL) emission intensity. XPS analysis results suggest that the PL enhancement is attributed to increases in the concentrations of deep levels such as oxygen and titanium interstitials as well as the density of interface states. The PL emission of ZnSe nanowires is also enhanced by thermal annealing. Annealing in an argon atmosphere is more efficient in enhancing the PL emission than annealing in an oxygen atmosphere.     

Dewetting process of Au films on SiO2 nanowires: Activation energy evaluation

SiO₂ nanowires gain scientific and technological interest in application fields ranging from nano-electronics, optics and photonics to bio-sensing. Furthermore, the SiO₂ nanowires chemical and physical properties, and so their performances in devices, can be enhanced if decorated by metal nanoparticles (such Au) due to local plasmonic effects.In the present paper, we propose a simple, low-cost and high-throughput three-steps methodology for the mass-production of Au nanoparticles coated SiO₂ nanowires. It is based on (1) production of the SiO₂ nanowires on Si surface by solid state reaction of an Au film with the Si substrate at high temperature; (2) sputtering deposition of Au on the SiO₂ nanowires to obtain the nanowires coated by an Au film; and (3) furnace annealing processes to induce the Au film dewetting on the SiO₂ nanowires surface. Using scanning electron microscopy analyses, we followed the change of the Au nanoparticles mean versus the annealing time extracting values for the characteristic activation energy of the dewetting process of the Au film on the SiO₂ nanowires surface. Such a study can allow the tuning of the nanowires/nanoparticles sizes for desired technological applications.     

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Preparation and characterization of SiO2 nanowires using a SnO2 catalyst

SiO₂ nanowires have been successfully synthesized on the surface of the silicon substrate via a thermal evaporation method using SnO₂ powders as the catalysts. The final synthesized product was systematically studied by X-ray powder diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM), and electron energy dispersive X-ray (EDX), UV-Visible absorption and photoluminescence (PL) spectroscopy. The results reveal that in the reaction and growth process, the real catalytic effect is Sn and SnO_x, and the growth of SiO₂ nanowire is most likely controlled by VLS mechanism. The PL spectral results indicate the obtained products have a stable yellow-green emission range. The products have improved performance and can be used in optoelectronic semiconductor devices.     

Fabrication of CdMnS nanowires with high temperature ferromagnetism

Diluted magnetic semiconductor Cd_0.94Mn_0.06S nanowires were fabricated by a modified DC electrochemical method depositing in anodic aluminum oxide nanoporous templates. It was found that crystal defects induced by nonuniform distribution of manganese were improved by heat treatment. Redistribution of manganese greatly improves the magnetic properties. A magnetic order transition temperature over 300 K was observed. Coercivities of 100 and 300 Oe were measured at 300 and 45 K, respectively.     

Dye-sensitized solar cells based on ZnO nanowire array/TiO2 nanoparticle composite photoelectrodes with controllable nanowire aspect ratio

The ZnO nanowire (NW) array/TiO₂ nanoparticle (NP) composite photoelectrode with controllable NW aspect ratio has been grown from aqueous solutions for the fabrication of dye-sensitized solar cells (DSSCs), which combines the advantages of the rapid electron transport in ZnO NW array and the high surface area of TiO₂ NPs. The results indicate that the composite photoelectrode achieves higher overall photoelectrical conversion efficiency (η) than the ZnO NW alone. As a result, DSSCs based on the ZnO NW array/TiO₂ NP composite photoelectrodes get the enhanced photoelectrical conversion efficiency, and the highest η is also achieved by rational tuning the aspect ratio of ZnO NWs. With the proper aspect ratio (ca. 6) of ZnO NW, the ZnO NW array/TiO₂ NP composite DSSC exhibits the highest conversion efficiency (5.5 %). It is elucidated by the dye adsorption amount and interfacial electron transport of DSSCs with the ZnO NW array/TiO₂ NP composite photoelectrode, which is quantitatively characterized using the UV-Vis absorption spectra and electrochemical impedance spectra. It is evident that the DSSC with the proper aspect ratio of ZnO NW displays the high dye adsorption amount and fastest interfacial electron transfer.     

Fabrication of quantum wires by selective intermixing induced in GaAs/AlGaAs quantum well heterostructures by SiO2 capping and subsequent annealing

Results are presented demonstrating that selective intermixing of GaAs/AlGaAs quantum well heterostructures by SiO₂ capping and subsequent annealing can be spatially localized with a length scale compatible with the observation of lateral quantum confinement effects. Patterning of a 400 nm-thick SiO₂ encapsulation layer deposited by rapid thermal chemical vapor deposition into arrays of wires was performed using high resolution electron beam lithography and subsequent reactive ion etching. After high temperature (850°C) annealing, photoluminescence experiments indicate the creation of double barrier quantum wires when small trenches (< 100 nm) are etched in the SiO₂ film at a period greater than 800 nm. Signatures of the formation of one-dimensional subbands are observed both in photoluminescence excitation spectroscopy and linear polarization anisotropy analysis. A mechanism involving the ability of the stress field generated during annealing at the SiO₂ film edges to pilot the diffusion of the excess gallium vacancies which are responsible for the enhanced interdiffusion under SiO₂ is suggested to account for the high lateral selectivity achievable with this novel process.     

TiO2花状纳米结构的制备及光催化性能

用Ti片和H2O2在较低的温度下通过控制反应时间制备了不同形貌的纳米TiO2.在80℃下反应10 min得到了和Ti片黏附较好的多孔纳米结构,延长反应时间先后得到了类花状和类棒状纳米结构．在80℃下反应4 h得到的纳米结构样品为非晶态,而反应10 h制备出以锐钛矿相为主的结晶态纳米结构．通过300℃退火得到的几乎是纯锐钛矿相的纳米TiO2．用紫外光照射降解RhB溶液的方法研究了纳米TiO2的光催化性能．结果表明7 cm2的退火后的类花状纳米TiO2降解染料分子的光催化效率是仅用紫外光降解的29．8倍．     

SiC/SiO2 core–shell nanowires with different shapes: Synthesis and field emission properties

Three different shapes of SiC/SiO₂ core–shell nanowires were synthesized on Si substrates through a reaction between methane and silica using iron as catalyst. Analysis of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) results indicated that catalyst morphology was the key factor for the formation of these three different products. The field emission properties of these three nanowires were investigated. Comparing the field emission results of these three nanowires, we can obtain a conclusion that a vertically well-aligned orientation to the substrate played a very significant role in improving the field emission properties when the emitters are up to a considerable number.     

Fabrication of silicon pyramid/nanowire binary structure with superhydrophobicity

A pyramid/nanowire binary structure is fabricated on the silicon surface via a NaOH anisotropic etching technique followed by a silver-catalyzed chemical etching process. The silicon surface shows a stable superhydrophobicity with high contact angle of 162° and small sliding angle less than 2° after being modified with octadecyltrichlorosilane (ODTS). The binary roughness of pyramid/nanowire structure presents a stable composite interface of silicon-air-water and responsible for the superhydrophobicity of silicon surface.     

Lithium ion conducting PVA:PVdF polymer electrolytes doped with nano SiO2 and TiO2 filler

The effect of nano SiO₂ and TiO₂ fillers on the thermal, mechanical and electrochemical properties of PVA:PVdF:LiCF₃SO₃ have been investigated by three optimized systems of SPE (80PVA:20PVdF:15LiCF₃SO₃), CPE-I (SPE:8SiO₂) and CPE-II (SPE:4TiO₂). From the TGA curve least weight loss has been observed for CPE-II indicating high thermal stability compared to other systems. Stress–strain curve of the prepared samples confirm the enhancement of tensile strength in CPE-II compared to CPE-I and SPE. Conductivity studies show that addition of TiO₂ filler slightly enhances ionic conductivity 3.7×10⁻³ S cm⁻¹ compared to filler free system at 303 K. Dielectric plots have been analyzed and CPE-II possesses higher dielectric constant compared to CPE-I and filler free system. Temperature dependence of modulus plots has been studied for highest conductivity possessing sample. Wider electrochemical stability has been obtained for nano-composite polymer electrolytes. The results conclude that the prepared CPE-II shows the best performance and it will be well suited for lithium ion batteries.     

Effect of λ/2 SiO_2 overcoat on the laser damage of HfO_2/SiO_2 high-reflector coatings

The effect of λ/2 SiO2 overcoat on the laser damage characteristics of HfO2/SiO2 high-reflector (HR) coatings is investigated with 1-on-l and N-on-1 laser damage test methods. The laser damage surface of 1-on-l is analyzed by a step analyzer. The surface morphologies show that laser damage makes the coating damaged area protrudent and rough for HR coating without λ/2 silica overcoat, but concave and smooth for HR coating with A/2 silica overcoat. The result of 10-on-l multi-pulse irradiation on the same point of the coating shows that there is an energy density stage on the damage curve. If the laser energy density is within the range of the stage, HfO2/SiO2 HR coatings with λ/2 silica overcoat will not be damaged more than 2 times for multi-shots, and the surface damages are very slight so that there is no impact on the coating performance. Another interesting result is that the energy density stage extends from the damage threshold to the point of about 3 times of threshold, which is similar to the