Catalytic synthesis and photoluminescence of needle-shaped 3C-SiC nanowires

Needle-shaped 3C-SiC nanowires were grown from commercially available SiC powders in a thermal evaporation process with iron as catalyst. A strong broad photoluminescence peak located around 450 nm was observed at room temperature, which may be ascribed to quantum size effects of nanomaterials. Needle-shaped 3C-SiC nanowires may have great potential applications such as blue-green light-emitting diodes and display devices.     

Growth of single-walled carbon nanotubes on silicon nanowires

Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.     

Large scale synthesis of silicon nanowires

Artificial nanostructures (Samuelson et al., Physica E 21:560–567, 2004; Xia et al., Adv Mater 15:353–389, 2003) show promise for the organization of functional materials (Huck and Samuelson, Nanotechnology 14:NIL_5–NIL_8, 2003) to create nanoelectronic (Mizuta and Oda, Science 279:208–211, 2008) or nano-optical devices (Mazur et al.; Tanemura et al., Synthesis, Optical Properties and Functional Applications of ZnO Nano-materials: A Review, 1–3:58–63, 2008). However, in most manufacturing recipes described so far, nanostructures are synthesized in solution and/or uncontrolled deposition results in random arrangements; this makes it difficult to measure the properties of attached nanodevices or to integrate them with conventionally fabricated microcircuitry. Here, we describe a fully CMOS compatible process technology for mass manufacture of polysilicon nanowires by the CVD (chemical vapor deposition) method. The large scale production of nanowires could successfully be synthesized on silicon (100) substrates. However, the method presented here can successfully be employed with all technologically useful substrates with good adhesion for silicon such as SiO₂, diamond-like carbon or III–V semiconductors. This opens up the possibility for the fabrication of strain-sensitive and defect-sensitive optoelectronic devices on the optimum III–V substrate (Fonstad et al.). Finally, scanning electron microscopy (SEM) was used to characterize the as-synthesized nanowires and energy-filtered transmission electron microscopy (EFTEM) and scanning transmission electron microscopy (STEM) analysis were used to determine the nanowire composition.     

Catalytic and non-catalytic growth of amorphous silica nanowires and their photoluminescence properties

A simple method based on the thermal oxidation of Si wafers in presence of a mixture of MgO and graphite powder was developed for large-scale synthesis of very long amorphous silica nanowires. The synthesis was done with and without gold as the catalyst. Almost aligned uniform nanowires with diameters within 60-90 nm and length up to few hundred micrometers were obtained using gold as the catalyst while bicycle chain like nanowires were obtained in absence of the catalyst. The growth sequence of the nanowires was observed through scanning electron microscope. Both forms of the nanowires emitted blue lights at 414 nm (3 eV) under excitation at 250 nm.     

Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor–liquid–solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.     

Comparative investigation of photoluminescence of silicon wire structures and silicon oxide films

Photoluminescence spectra and their dependence on temperature as well as Raman scattering spectra and Atomic Force Microscopy investigations have been used to study the peculiarities of the red photoluminescence band in low-dimensional Si structures, such as porous silicon and silicon oxide films. It has been shown that the red photoluminescence band of porous silicon is complex and can be decomposed into two elementary bands. It was discovered that elementary band intensities depend very much on surface morphology of porous silicon. The same positions of the photoluminescence bands are also observed in silicon oxide films for different oxide composition. Comparative investigation of the PL temperature dependences in porous silicon and silicon oxide films indicates that silicon-oxide defect related mechanisms of some elementary photoluminescence bands are involved.     

Large-scale and catalyst-free synthesis of zinc nanotubes and nanowires

Metallic zinc one-dimensional materials including nanotubes and nanowires were synthesized on a large scale by a simple method. The process was both catalyst and template free. The resulting Zn nanotubes and Zn nanowires were characterized and confirmed by means of X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and transmission electron microscopy. The growth of Zn nanotubes was reported for the first time.     

Eshelby twist and magic helical zinc oxide nanowires and nanotubes

Twisted zinc oxide nanowires and nanotubes were recently synthesized by screw-dislocation growth. We show theoretically that once their diameter increases above a critical size of the order of a few atomic spacings, the existence of these structures can be rationalized in terms of the energetics of surfaces and veritable Eshelby's twist linear elasticity mechanics supplemented by a nonlinear core term. For Burgers vector larger than the minimum allowed one, a twisted nanotube with well-defined thickness, rather than a nanowire, is the most stable nanostructure. Results are assistive for designing ultrathin nanostructures made out of nonlayered materials.     

Structural and photoluminescence properties of ZnO nanoparticles on silicon oxide

Isolated, self assembled ZnO nanoparticles are grown in two steps: by the electron beam evaporation of Zn on oxidised silicon wafers, during which isolated Zn nanodots are grown, and a subsequent annealing in oxygen that results in the desired ZnO nanodots. Low temperature PL measurements of the ZnO nanodots show that the near band edge part of the spectra is dominated by a zero phonon line near 3.36 eV which is an overlap of two emitting lines near 3.363 eV and 3.367 eV. Characterization by TEM and EELS shows that the nanoparticles are zinc oxide single crystals grown with their c-axis perpendicular to the substrate; their distribution, size and crystallinity depend on the deposition parameters of zinc and the growth substrate. We discuss the effect of these parameters on the morphology of the resulting material. Our approach demonstrates a simple method for the growth of high purity isolated ZnO nanodots of similar sizes, distributed uniformly on a large surface. PACS 61.46.Df; 81.05.Dz; 81.07.-b     

Sol-flame synthesis of hybrid metal oxide nanowires

Hybrid metal oxide nanowires (NWs), with small characteristic diameter and large aspect ratio, can have unique and yet tunable chemical, optical and electrical properties by independently controlling the chemical compositions and morphologies of the individual components. Such hybrid NWs are promising building blocks in many applications, such as catalysis, sensors, batteries, solar cells and photoelectrochemical devices. However, these applications are hindered by the lack of scalable and economic methods for the synthesis of hybrid NWs. Here, we report a simple, scalable and new sol-flame method to synthesize various hybrid metal oxide NWs, including nanoparticle-shell decorated NWs (NP-shell@NW), NP-chain decorated NW (NP-chain@NW) and doped NWs. The sol-flame process first coats existing NWs with NPs or dopants precursors prepared by the sol–gel process, and then dissociates/oxidizes these precursors in flame. The sol-flame method uniquely combines the merits of the flame process (e.g., high temperature and fast heating rate) with low temperature sol–gel method (e.g., broad material choices and excellent chemical composition control). For both the NP-shell@NW and NP-chain@NW cases, the high temperature flame, compared to furnace, provides much faster heating rate and shorter duration for annealing, which evaporates and burns the precursor solvent rapidly, causing NPs to quickly nucleate around NWs without significant agglomeration. Hence, higher loading density of NPs with smaller sizes is decorated to the NWs, and the formed hybrid NP@NW exhibits significantly higher catalytic activity than that of the furnace-annealed sample. Similarly when using the sol-flame method to dope NWs, the high temperature flame enables rapid dopant diffusion and short annealing duration that maintains the morphology of the original materials and protects the delicate NW substrates from damage. We believe that the new sol-flame method can be applied to synthesize various 1-D hybrid metal oxide nanostructures, thereby impacting diverse application fields.     

Thermal evaporation synthesis of zinc oxide nanowires

High quality ZnO nanowires were synthesized at high temperature without using heterogenous catalysts. The nanowires had a uniform prismatic shape and were grown in a cacti-like morphology. Characterizations of the products by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy showed that the ZnO nanowires were single crystalline and of high purity. An intensive exciton emission was observed around 3.25 eV from the ZnO nanowires at room temperature. The growth mechanism was discussed based on the experimental conditions and the ZnO crystal growth habits. This growth method can be used to prepare other metal oxide nanowires. PACS 61.46.+w; 81.16.-c; 81.07.De, 81.05.Hd     

Ab initio study of iron nanowires encapsulated inside silicon nitride nanotubes

In the present paper, the iron nanowires (containing single Fe atomic chain and Fe_n nanowire (n=5, 9 and 13)) encapsulated in (8,8) silicon nitride nanotubes (SiNNTs) have been investigated systematically using the first-principles within GGA. For the pristine (8,8) SiNNT, a ferromagnetic ground state is more favorable, and the semiconducting character is observed. After single Fe atom chain encapsulated inside (8,8) SiNNT, two possible configurations are determined depending on the distance from the wire to the tubewall. Furthermore, these two configurations keep high spin-dependent transport and thus can be used in spintronics devices. As for the Fe_n nanowires encapsulated in (8,8) SiNNTs (Fe_n@(8,8)), the spin-dependent transport are badly disturbed, but the stabilities of metal wires are reinforced in Fe_n@(8,8) systems. In particular, an enhanced ferromagnetism is observed after the Fe₁₃ nanowire encapsulated into the (8,8) SiNNT. The results suggest that the Fe_n@(8,8) systems can be used in the magnetic storage industries.     

Shape controlled flower-like silicon oxide nanowires and their pH response

Silicon oxide nanowires were synthesized with high-temperature evaporation using silicon monoxide as starting materials and tin and gallium as catalysts. The products take the shape of flowers with petals composed of silicon oxide nanowires. The pH response of the products reveals excellent linear relation due to their vast surface area.     

Cost-saving synthesis of vanadium oxide nanotubes

The synthesis of vanadium oxide nanotubes has been achieved by using V₂O₅ as vanadium oxide precursor. Due to its low cost, high yield and ease of handling, the synthesis starting from V₂O₅ provides an advantageous access to large quantity of the tubular vanadium oxide nanotubes.     

Synthesis of highly aligned silicon oxide nanowires and their novel patterns

Highly aligned amorphous SiO_x nanowires with lengths of up to several hundred microns were synthesized by using a millimeter-sized droplet of elemental gallium as a catalyst. Gallium displays highly catalytic activity for the growth of SiO_x nanowires. Some novel patterns of aligned SiO_x nanowires, including honeycomb-like and spindle-like structures, were observed. These SiO_x nanowires are expected to be used in nanooptics and reinforcing composites. PACS 61.46.+w; 81.07.Vb; 81.16.Be     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

Raman analysis of oxide cladded silicon core nanowires grown with solid silicon feed stock

Solid–liquid–solid (SLS) combined with Vapor-liquid–solid (VLS) growth mechanism has been used for synthesizing Core-clad silicon nanowires (SiNWs) by thermal annealing onto two different catalyst substrates (Au/Si and Ni/Ti/Si). It provides a novel method to synthesize SiNWs which is cost-effective, large-area-compatible and may give a higher degree of control of the end product, facilitated by the simple experimental process for further device applications. The first-order Raman peaks of the SiNWs were found to shift and to broaden asymmetrically in comparison to the c-Si Raman peak. Using a phonon confinement model, the average diameter of the wires can be estimated from the Raman spectra but are consistently lower than the diameters measured using high-resolution transmission electron microscopy. We interpret this as due to the confining contribution of the oxide clad. Due to the simplicity of the method, it could be adapted in industry for large scale synthesis of SiNWs with oxide clad for device fabrication, e.g., surround-gate field effect transistors.     

The intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes

Estimates of the intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes have been presented from the application of Fermi’s golden rule formula based upon an elastic continuum model for cubic anharmonicity. In particular, results have been presented for the lowest non-zero mode in both nanostructures, and also the breathing mode in the nanotube. Except for the ultrathin nanowire, the lifetime increases with size and decreases with an increase in temperature. Typically, these modes have a lifetime of the order of nanoseconds, almost a thousand times larger than the lifetimes of optical phonon modes in the corresponding bulk materials. Also, at room temperature the lifetime of the lowest non-zero mode is nearly an order of magnitude larger in the (20,20) nanotube than in the nanowire of similar thickness (width 2.2 nm).     

Flame synthesis of WO3 nanotubes and nanowires for efficient photoelectrochemical water-splitting

Tungsten trioxide (WO₃) is a technologically important material for photoelectrochemical (PEC) water-splitting for the solar production of hydrogen fuel from water. For PEC water-splitting, high aspect ratio WO₃ nanostructures such as nanowires (NWs) and nanotubes (NTs) are superior to planar WO₃ films because they orthogonalize the directions of light absorption (along the long axis) and charge transport (across the short radius), leading to both efficient light absorption and charge carrier collection. However, PEC water-splitting requires the growth of WO₃ on delicate transparent conducting oxide (TCO) substrates that cannot tolerate high temperature processing. To date, the large-scale, rapid, economical synthesis of high aspect ratio WO₃ nanostructures on these delicate TCO substrates remains a major challenge. Previously, we synthesized WO₃ NW arrays by a rapid, atmospheric and scalable flame vapor deposition (FVD) method, in which a flame oxidizes and evaporates tungsten metal to produce tungsten oxide vapors that condense onto a colder substrate in the form of NWs. Nevertheless, at substrate temperatures low enough to ensure the health of the TCO, the growth of WO₃ NW arrays was non-uniform and sparse due to limitations of the experimental design. Herein, we significantly improve the FVD design to grow uniform and densely packed WO₃ nanostructures on TCO substrates, thereby enabling the application of these WO₃ nanostructures to PEC water-splitting. The morphology of the nanostructures varied from densely packed multi-shell NTs and single-shell NTs to NWs as we increased the substrate temperature in the range 530–700 °C. Importantly, the WO₃ NTs synthesized by FVD had higher areal number density and longer length than state-of-the-art WO₃ NW photoanodes grown by chemical vapor deposition and hydrothermal methods, resulting in stronger light absorption and superior PEC water-splitting performance. Thus, in addition to being scalable, rapid and economical, the FVD method also synthesizes materials of high quality.     

Large-scale synthesis of ZnO nanowires using a low-temperature chemical route and their photoluminescence properties

Single-crystalline zinc oxide (ZnO) nanowires were synthesized from zinc powder and H₂O through a simple chemical route at 730 °C in Ar atmosphere. The potential exists for bulk synthesis of ZnO nanowires at temperatures significantly less than the 200–300 °C of thermal evaporation methods reported formerly. Scanning electron microscopy and transmission electron microscopy observations reveal that the ZnO nanowires are structurally uniform, have lengths up to several hundreds of micrometers and diameters of about 40–60 nm and crystallize in a hexagonal structure. The growth of ZnO nanowires is controlled by the vapor–solid crystal-growth mechanism. Photoluminescence measurements show that the ZnO nanowires have a strong near-band ultraviolet emission at 380 nm and a green light emission at 520 nm caused by oxygen vacancies. PACS 81.05.Ys; 78.55.Et