Bi系（2223）银包套超导带的A.C.磁化率研究

分别测量高 T_c(2223相)BSCCO 银包套超导带的交流磁化率实部 X′-T 和虚部 X″-T 曲线与交流场振幅的关系,其虚部损耗峰高度及对应的温度随交流场振幅增加分别有上升和下降的趋势.当磁场垂直样品 c 轴(平行样品 c 轴)时,损耗峰的移动幅度小于平行时的移动.     

氧含量对CaCu3Ti4O12巨介电常数和介电过程的影响

本文研究了在真空、空气和氧气中烧结制备的三种 CaCu₃Ti₄O₁₂陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu₃Ti₄O₁₂的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu₃Ti₄O₁₂ 低频高介电常数的重要起源.     

Bi2Sr2CaCu2Oy单晶在强磁场下的交流磁化率研究

本文研究了 Bi_2Sr_2CaCu_2O_y,单晶在磁场 H 垂直于 c 轴情况下的交流磁化率,得到了交流磁化率虚部峰温度 T_p 和外加直流磁场 H_(DC)的关系为:(1-T_P/T_c)∝H_(DC)~(0.2).本文还对不可逆线进行了讨论,并和用其他方法测量的不可逆线作了比较.     

YBa2Cu3O7-y超导体的50Hz交流损耗研究

利用瓦特计技术,研究了YBa_2Cu_3O_(7-y)烧结样品和粉末熔化法(PMP)织构样品在77K和50Hz交变磁场下的交流(ac)损耗(?)实验结果表明,ac损耗(?)同外磁场振幅H_m之间遵从幂函数规律:(?)∝H_m~n对于YBa_2Cu_3O_(7-y)的烧结样品:(1)当H_m<40Oe时,这样低的磁场已穿透弱连接的晶粒边界网络,导至晶粒间的损耗,(?)∝H_m~(1.6)(2)当40Oe≤H_m<170Oe时,中等磁场破坏了晶粒间的耦合,并且磁通穿进了晶粒内,引起不完全穿透的晶粒内损耗,(? 关键词：     

高压高温处理对YNi2B2C晶界效应的影响

在测量经压力处理的氩弧熔炼的YNi2B2C的金属间化合物超导体中场冷磁化率时,观察到升温磁化率曲线在临界温度附近有一个负的磁化率峰。通过研究高压高温处理对粉末样品和块状样品的场冷和零场冷却磁化率曲线的影响,认为场冷时反常负磁化率峰是由于样品中晶界的存在,从而导致晶粒间的弱连接所引起的,而不是由磁相变或超导和磁性共存现象所引起的,并认为有可能利用高压高温技术制备这类化合物和生长单晶。     

高压高温处理对YNi_2B_2C晶界效应的影响

在测量经压力处理的氩弧熔炼的YNi2 B2 C的金属间化合物超导体中场冷磁化率时 ,观察到升温磁化率曲线在临界温度附近有一个负的磁化率峰。通过研究高压高温处理对粉末样品和块状样品的场冷和零场冷却磁化率曲线的影响 ,认为场冷时反常负磁化率峰是由于样品中晶界的存在 ,从而导致晶粒间的弱连接所引起的 ,而不是由磁相变或超导和磁性共存现象所引起的。并认为有可能利用高压高温技术制备这类化合物和生长单晶。     

Fe84Zr3.5Nb3.5B8Cu1薄带的动态磁化过程

由于铁磁性样品的交流磁化率虚部χ″随磁场强度H的变化是非线性的，在低场(0～12 mT)有一个与铁磁共振信号强度相当的低场非共振信号. 利用ESR谱仪测量交流磁化率虚部χ″对磁场强度H的一次微分随磁场强度的变化dχ″/dH～H，研究Fe₈₄Zr_3.5Nb_3.5B₈Cu₁合金薄带的动态磁化特性. 合金薄带样品是各向异性的，易磁化轴（易轴）在薄带的横向方向，外加磁场H在易轴方向. 样品在可逆磁化区域(0～2.0 mT)和趋近饱和的磁化区域(9.0 mT以上)，dχ″/dH=0；在不可逆畴壁移动过程中，当H为4.2 mT 时, χ″(H)达到最大值χ_max；在磁畴转动过程中，χ″(H)正比于H²（瑞利区）；而实验中却发现，在某些区域交流磁化率虚部χ″(H) 与磁场强度H的n次方即Hⁿ(n≥3)有关；而且发现，在一定区域，有三段不可逆畴壁移动和磁畴转动交替出现的现象. 在这一过程中，dχ″/dH为常数的磁场范围分别为4.8～5.2mT, 5.8～6.4 mT, 8.0～8.5 mT, 其常数相对值分别为1：0.85：0.60. 样品的交流磁化率虚部χ″对磁场H的微分dχ″/dH随磁场H的这一变化规律反映了不可逆畴壁移动和磁畴转动交替发生的微观过程.     

交流磁化率方法研究磁通钉扎能与电流关系

本介绍如何利用交流磁化率测量高温超导体与电流密度Ｊ，直流场Ｈｄ和温度Ｔ有关的磙通钉能Ｕ。根据磁通扩散理论和随外场变化的交流磁化率虚部ｘ峰温的系统实验研究，就可以得到上述能量函数，对掺Ｐｂ和Ｂａ的ＴｌＳｒ２Ｃａ２Ｃｕ３Ｏｙ超导体的系统交流磁化率的测量和分析得到的结果Ｕ。     

RUSr2EU1.4Ce0.6Cu2O10-δ超导体的磁特性研究

RuSr2Eu1.4Ce0.6Cu2O10-δ超导样品的交流磁化率曲线在TM2～125 K和Tp～75 K处出现峰值.我们通过测量不同频率下的交流磁化率和电子自旋共振谱,对这两个峰的起源进行了详细的研究.通过对铁磁共振线的强度、线宽和共振场与温度依赖关系的讨论,我们得出TM2附近的峰对应着体系的反铁磁转变.Tp处的峰随着测量频率的增加向高温移动,且峰的强度逐渐减小,这一结果证实了体系中存在自旋玻璃态.     

Ba-Y-Cu-O系统中的两个超导相

用交流磁化率装置测量了Ba-Y-Cu-O系统的抗磁屏蔽效应,发现在同一样品中存在两个超导相,两个相的体积比例和X-射线衍射峰的高度相对应。另外用蓝宝石做样品支架,背底讯号比用紫铜做支架小100倍,基本上可忽略背底的影响。     

YBa2Cu3O7-xc轴方向临界电流的测定

本文测量了熔化织构法生长(MTG)的和通常烧结法制备的YBa₂Cu₃O_7-x块状样品的传输临界电流密度T_c以及磁场-样品不同取向的磁滞回线。MTG样品的J_c在78K和零场时达到3.5×10⁴A/cm²,实验提供了有力的证据表明如此高的J_c主要是由于块状样品内弱连接的消除,因为MTG块状样品的整体J_c与烧结样品颗 关键词：     

Effects of Zr substitution on structural,morphological, and magnetic properties of bismuth iron oxide phases

The present study involves co-precipitation method to grow un-doped and Zr-doped bismuth iron oxide with x_(Zr)=0.10–0.30. The molar solutions of ferric chloride(FeCl_3), zirconyle chloride(ZrOCl_2), and bismuth chloride(BiCl_3) are prepared in distilled water, and are allowed to react with sodium hydroxide(Na OH). The synthesized powders are then converted into pellets, which are sintered at 500℃ for two hours in a muffle furnace. X-ray diffraction(XRD) shows multi-phase formation in un-doped and Zr doped samples. Scanning electron microscope(SEM) depicts layered structure at low Zr concentration x_(Zr)= 0.10, while uniform surface with smaller grains and voids is observed at x_(Zr)= 0.20, but at x_(Zr)= 0.30, cracks and voids become prominent. The ferromagnetic nature of the un-doped sample is observed by vibrating sample magnetometer(VSM), while paramagnetic behavior appears due to Zr doping. The ferromagnetism in un-doped sample is lost by Zr doping, which is due to the formation of additional Fe–O–Zr bonds that induce paramagnetic behavior.     

Microstructural analysis of Nd1.85Ce0.15CuO4−y superconductor sintered under high pressure and ambient pressure

The microstructure of Nd_1.85Ce_0.15CuO_4−y superconductor sintered under high pressure and ambient pressure has been characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HREM). It has been observed that the conventional sample is porous, while the high-pressure sample is almost pore-free. It is confirmed that the thermal treatment under high pressure recovers fairly well connections between grains which were partly crushed during the compression process; hence the weak links at grain boundary are improved. Furthermore, a high density of defects induced by pressure is observed in the high-pressure sample. In contrast, the conventional sample is nearly perfect. For comparison, the microstructure of a sample pressed at high pressure at room temperature is also examined. The influence of pressure on the microstructure and the superconductivity is discussed.     

聚晶金刚石复合片超高压烧结过程的实验研究

 采用X射线衍射（XRD）分析、扫描电子显微镜（SEM）和能谱分析（EDX）等方法,对在压力5.6 GPa、温度1 460 ℃条件下,加热时间分别为2、3、4、6、8、10 min的聚晶金刚石复合片（PDC）样品进行了分析。结果表明：PDC的烧结经历了金刚石的石墨化过程,而且在烧结过程中金刚石层表面的XRD图谱出现了WC衍射峰,强度由弱到强,再由强到弱,直至消失;进一步的研究发现,PDC中助烧结剂Co的晶格常数因C和W原子的固溶会变大,并随PDC加热时间的延长出现一个峰值;从硬质合金基体扩散到金刚石层的Co由于扩散通道各异、所受阻力不同,使得其分布不均匀。     

MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射

通过显微拉曼散射对用金属有机化学气相沉积(MOCVD)法在Al2O3衬底上生长的六方相CaN和掺Mg的P型GaN薄膜进行了研究。在两个样品的拉曼散射谱中同时观察到位于640,660cm^-1附近的两个峰。640cm^-1的峰归因于布里渊区边界(L点)最高声学声子的二倍频,而660cm^-1的峰为布里渊区边界的光学声子支或缺陷诱导的局域振动模。掺Mg的GaN在该处的峰型变宽是Mg诱导的缺陷引起的加宽或Mg的局域模与上述两峰叠加的结果。在掺Mg的样品中还观察到276,376cm^-1几个局域模并给予了解释。同时掺Mg的GaN中出现了应力弛豫的现象,掺Mg引起的失配位错和电子-声子相互作用都有可能对E2模的频率产生影响。     

单斜辉石固溶体CaMgSi2O6-NaAlSi2O6的合成机理研究

 研究了压力和温度对单斜辉石的结晶和晶粒纤维编织的影响。在较低的晶化温度下压力对单斜辉石结晶的影响很明显，这种影响随温度升高而减弱。然而，压力对单斜辉石晶粒纤维编织的影响正相反，在相同的高温下，较高压力下晶化的单斜辉石晶粒纤维比较低压力下得到的晶粒纤维粗壮，而且编织紧密。     

Double-peak resistivity transport properties of La0.67Ca0.33MnO3 ceramics

Polycrystalline samples of La_0.67Ca_0.33MnO₃ were prepared by solid-state reactions by varying the pelletization force and the sintering temperature. Lowering the sintering temperature gave rise to smaller grains and increased the overall resistivity of the ceramic. Partial melting was observed in the ceramics sintered at higher temperatures (1400-1500 °C). Additionally, these ceramics showed two distinct resistivity peaks. The resistivity peak near the magnetic transition (T_C) was sharp, whereas the second peak was a broad one observed below T_C.     

Investigation of the domain structure of sintered Nd-Fe-B permanent magnets by Bitter-pattern method

The conventional Bitter-pattern technique and the colloid-scanning electron microscopy (colloid-SEM) method were used to study the domain structure of polycrystalline sintered Nd-Fe-B permanent magnets. In the thermally demagnetized state most of the grains are multidomain and the domain structures resemble those observed in bulk uniaxial crystals with strong magnetocrystalline anisotropy. Investigations of the magnetic microstructure during magnetizing cycle showed that the domain walls can easily be moved within the grains and that the magnetization reversal in sintered Nd-Fe-B magnets occurs predominantly by the nucleation and expansion of reverse domains at structural imperfections near the grain boundaries. It is also shown that the colloid-SEM method is more surface sensitive and reveals the domain structure with better resolution than the conventional Bitter technique. Thanks to the application of digital image processing systems, clear and high contrast domain images were obtained. The work was supported by the Lódź University within Research Grant 505/694 (2004).     

Structure and role of the interfacial layers in VC-rich WC-Co cermets

The microstructure of WC-Co composites sintered with VC or with a mixture of VC and Cr₃C₂ is investigated by several techniques in order to understand the grain growth inhibition process. In this work, using the high-resolution transmission electron microscopy and high-resolution energy-filtering electron microscopy, we are able to study on the atomic scale the microstructure and composition of the phases present in the alloys. A thin (VW)C _x layer less than 1 nm thick covering all surfaces of WC grains and thin (VW)C _x platelets embedded in the WC grains are evidenced. Microsteps are observed at the interface between Co and WC along the ?11amp;2macr;0?_WC directions. Small (VW)C _x precipitates lie on the (0001)_WC and {10amp;1macr;0} facets of these steps. On the (0001) surface of WC grains, other stacking sequences of the metal planes are sometimes observed and, in particular, the occurrence of the compound (VW)₂C is shown. Owing to these observations a grain growth inhibition mechanism is proposed.     

用正电子湮没研究纳米碲化铋的缺陷及其对热导率的影响

利用水热法合成了Bi₂Te₃纳米粉末, 并在300–500 ℃的温度范围内对其进行等离子烧结. X射线衍射测试表明制得的Bi₂Te₃粉末是单相的. 对于300–500 ℃范围内烧结的样品, 扫描电子显微镜观察发现随着烧结温度的升高样品颗粒明显增大, 但是根据X射线衍射峰的宽度计算得到的样品晶粒大小并没有明显的变化. 正电子湮没寿命测试结果表明, 所有的样品中均存在空位型缺陷, 而这些缺陷很可能存在于晶界处. 正电子平均寿命随着烧结温度的升高而单调下降, 说明较高的烧结温度导致了空位型缺陷浓度的降低. 另外, 随着烧结温度从300 ℃升高到500 ℃, 样品的热导率从0.3 W·m^-1·K^-1升高到了2.4 W·m^-1·K^-1, 这表明在纳米Bi₂Te₃中, 空位型缺陷和热导率之间存在着密切的联系.