共查询到20条相似文献,搜索用时 187 毫秒
1.
本文研究了非易态软磁薄膜Fe90-xCoxZr10的平面霍耳电压及磁阻随磁场方向、成分和温度的变化规律。采用通常的六探针法进行了测量。结果表明平面霍耳电压和磁阻分别满足经验公式Vy=pM2Isin2θ和△ρ=cM2cos2θ;并给出了Vy表达式中的常数项p正比于ρ2。此外,样品Co90Zr10和样品Fe70Co20Zr10晶化前后的Vy变化正好相反,即富钴成分的样品晶化后,Vy增加,而富铁成分的样品Vy下降。
关键词: 相似文献
2.
本研究以煤基活性炭产品为原料,尿素作为氮源,通过浸渍、高温活化的方法进行改性,开发了一款可用于煤制氢/重整制氢中温变换气中CO2脱除的煤基富氮活性炭,并对其进行结构及性能表征。其中性能最优样品U-80C-N-550,其表面氮含量为9.92%,N/O比1.22,水接触角为137.92°±1.24°。在测试条件为99.99%CO2气氛,200?C温度,1 MPa压力下,CO2吸附容量可以达到1.27 mmol/g,且在进行40次吸附解吸循环过程中CO2吸附量基本保持不变,循环稳定性好。结果表明,不同条件下制备的富氮活性炭样品表面含氮基团含量及种类不同,因此通过改变吸附剂制备工艺条件,可适当调控活性炭表面含氮基团的种类及含量,从而提高其CO2吸附性能的同时增强其疏水性,得到了适合于含水蒸气富氢气体中脱除CO2的吸附剂。 相似文献
3.
4.
兴凯湖沉积物富里酸荧光特性研究 总被引:1,自引:0,他引:1
采集黑龙江省兴凯湖4个点位沉积物样品(样品号HXXD,HXXX,HXDX,HXDB),开展了沉积物富里酸(fulvic acid, FA)荧光特性研究。二维荧光光谱、三维荧光光谱均显示HXXD点位FA的主要荧光峰均出现在较长波长处。FA荧光光谱特征参数分析表明,各点位富里酸腐殖化程度为:HXXD>HXDX>HXDB>HXXX。其中HXXD点位FA以陆源输入为主,而其他点位FA则陆源与水生生物源并存。利用荧光区域积分(FRI)技术,对FA的三维荧光光谱5个区域(Ⅰ-Ⅴ)的荧光响应值比例(percent fluorescence response, Pi, n)比较证实,所有点位类胡敏酸区域(Ⅴ区)的PⅤ, n、类富里酸(Ⅲ区)的PⅢ, n均占有较大的比例,同时采用三维荧光区域积分法判断各点位FA腐殖化程度与二维荧光特性结论一致。三维荧光光谱中r(A, C)值与区域积分(FRI)中PⅤ, n/PⅢ, n及(PⅤ, n+PⅢ, n)/(PⅠ, n+PⅡ, n+PⅢ, n)均具有显著的相关性,因此,r(A, C)值是兴凯湖沉积物FA腐殖程度表征的一个方便、快捷的参数。 相似文献
5.
6.
主要研究了采用溅射后硒化方法制备CIGS(铜铟镓硒)薄膜太阳电池的吸收体材料中的表面层掺杂调节问题。并利用Raman散射谱分析研究了样品表面层特征峰的移用,研究结果表明: CIGS薄膜表面层由富In表面层调节为富CuGa表面层后,Raman特征峰位向高波数移动,表明薄膜表面的Ga含量随之变化,并导致表面能带的相应改变,经计算证实了富CuGa表面层样品较之富In表面层样品具有更高的表面能带,从而改善了以此材料为吸收层的太阳电池器件性能, Voc提高了74 mV,填充因子上升8%,最终使器件转换效率η相应提高了约2%。提高了Voc与FF。同时表明Raman散射谱作为一种灵敏的表面表征手段,在研究太阳电池吸收层表面状态时十分有力。 相似文献
7.
采用等离子体增强化学气相沉积法, 以NH3与SiH4为反应气体, n型单晶硅为衬底, 低温(220 ℃)沉积了富硅氮化硅(SiNx)薄膜. 在N2氛围中, 于500–1100 ℃ 范围内对样品进行了热退火处理. 采用Raman 光谱技术分析了薄膜内硅量子点的结晶情况, 结果表明, 当退火温度低于950 ℃时, 样品的晶化率低于18%, 而当退火温度升为1100 ℃, 晶化率增加至53%, 说明大部分硅量子点都由非晶态转变为晶态. 实验通过Fourier 变换红外吸收(FTIR)光谱检测了样品中各键的键合结构演变, 发现Si–N键和Si–H键随退火温度升高向高波数方向移动, 说明了薄膜内近化学计量比的氮化硅逐渐形成. 实验还通过光致发光(PL)光谱分析了各样品的发光特性, 发现各样品中均有5个发光峰, 讨论了它们的发光来源, 结合Raman光谱与FTIR光谱表明波长位于500–560 nm的绿光来源于硅量子点, 其他峰则来源于薄膜内的缺陷态. 研究了硅量子点的分布和尺寸对发光带移动的影响, 并根据PL峰位计算了硅量子点的尺寸, 其大小为1.6–3 nm, 具有良好的限域效应. 这些结果有助于制备尺寸不同的硅量子点和基于硅量子点光电器件的实现.
关键词:
硅量子点
氮化硅薄膜
光致发光
Fourier 变换红外吸收 相似文献
8.
9.
10.
报道了采用等离子体辅助分子束外延方法(P-MBE),利用NO作为N源和O源,在c-面蓝宝石(c-Al2O3)衬底上外延生长了N掺杂ZnO薄膜。X射线衍射谱(XRD)和吸收谱中都出现了不同于未掺杂样品的特性,X射线光电子谱(XPS)中也发现了N的受主信号。但是在霍尔效应(Hall-effect)测量中,发现该样品并没有出现预期的p型导电特性,而是出现载流子浓度很高(2.15×1020cm-3)的n型导电特性。结合XPS结果和理论分析,认为在富Zn条件下生长会导致过量的填隙Zn原子,补偿了全部的受主后,又促使其出现了从半导体-金属的Mott转变。 相似文献
11.
Jiang Jianyi Sun Yupin Zeng Fanchun Yin Huaqing Du Jiaju 《Zeitschrift für Physik B Condensed Matter》1989,77(2):193-195
The single 110 K phase Bi(Pb)–Sr–Ca–Cu–O superconductor was made by sintering in air. Its zero-resistance temperature is 106 K, and it is an orthorhombic cell witha=5.403 Å,b=5.412 Å andc=37.062 Å. It formed around the low-T
c
phase. The forming period of the 110 K phase can be shortened by multiple sintering and grinding. If PbO is mixed into the samples after the 85 K phase has formed, the forming rate of the 110 K phase can be increased significantly. EDAX analysis of grain composition confirms that the Pb atoms enter the unit cell, and probably Pb cations replace some Ca cations. 相似文献
12.
Electrical resistivity and magnetoresistance of CeB6 single crystal have been measured in the temperature range from 1.3 to 300 K under the magnetic field up to 85 kOe. Three characteristic phases are distinguished consistently with other measurements. The Kondo like behaviour in the resistivity observed in the high temperature phase is fitted by the conventional form for the dilute Kondo state with the Kondo temperature TK = 5 ~ 10K and the unitarity limit resistivity cm/Ce-atom. The negative magnetoresistance in the middle phase is stronger with increasing magnetic field and with decreasing temperature suggesting rapid destruction of the Kondo state. The magnetoresistance in the low temperature phase exhibits some anomalies suggesting sub-phases corresponding to several kinds of spin ordering. 相似文献
13.
《Journal of magnetism and magnetic materials》1987,67(2):190-192
The magnetostriction of a single crystal cubic Laves phase compound Tb0.27Dy0.73Fe2 is measured with the applied field (0–25 kOe) in the [111] direction in the temperature range between 80 and 300 K. Evidence is seen of a possible transition to the[uv0] easy axis phase during the spin re-orientation form [100] easy axis direction to the [110] easy axis direction. 相似文献
14.
Haiqian Wang Zhiqiang Mao Ling Zhou Menghua Cheng Guien Zhou Zhaojia Chen 《Applied Physics A: Materials Science & Processing》1990,50(6):519-521
Differently heat-treated samples with the nominal composition Bi1.6Pb0.3Sb0.1Sr2Ca2Cu3O
y
were studied by resistance and ac susceptibility measurements in the temperature range 77 K<T<200 K. The X-ray diffraction patterns at room temperature were also investigated. The experimental results show that repeated quenchings can depress the formation of the 80 K phase, and enhance the formation of the 110 K phase. 相似文献
15.
16.
Tatsuya Yanagisawa Hiroyuki Hidaka Hiroshi Amitsuka Shintaro Nakamura Satoshi Awaji Elizabeth L. Green 《哲学杂志》2020,100(10):1268-1281
ABSTRACTIn this study, ultrasonic measurements were performed on a single crystal of cubic PrNi2Cd20, down to a temperature of 0.02?K, to investigate the crystalline electric field ground state and search for possible phase transitions at low temperatures. The elastic constant (C11?C12)/2, which is related to the Γ3-symmetry quadrupolar response, exhibits the Curie-type softening at temperatures below ~30?K, which indicates that the present system has a Γ3 non-Kramers doublet ground state. A leveling-off of the elastic response appears below ~0.1?K toward the lowest temperatures, which implies the presence of level splitting owing to a long-range order in a finite-volume fraction associated with Γ3-symmetry multipoles. A magnetic field–temperature phase diagram of the present compound is constructed up to 28?T for H || [110]. A clear acoustic de Haas–van Alphen signal and a possible magnetic-field-induced phase transition at H ~26?T are also detected by high-magnetic-field measurements. 相似文献
17.
利用脉冲激光沉积技术在c-Al2O3单晶基片上制备了Bi2Sr2Co2Oy热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi2Sr2Co2Oy薄膜的室温电阻率ρ和塞贝克系数S分别为2.9mΩ/cm和110μupV/K,其功率因子S2/ρ好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2K,9T时达到了40%. 相似文献
18.
M. Açıkgöz S. Kazan F.A. Mikailov T.G. Mammadov B. Aktaş 《Solid State Communications》2008,145(11-12):539-544
This paper presents the results of dielectric constant and Electron Paramagnetic Resonance (EPR) investigations of Fe3+-doped TlGaSe2 single crystals in the temperature range of 15–300 K. The influence of Fe impurities on dielectric properties and phase transitions of TlGaSe2 crystal has been studied. The results were considered in comparison with earlier observed results from pure TlGaSe2 compounds. We observed the considerable decrease of the dielectric constant as well as the change of the shape of the temperature dependence of the dielectric constant in doped crystals. Some certain significant changes of EPR spectra, which are associated with a strong splitting and appearance of additional resonance lines, were observed at the temperatures below 110 K. Such transformations are considered as the result of non-equivalent displacements of different groups of Tl atoms during the structural phase transitions. 相似文献
19.
A STUDY ON THE ULTRASONIC VELOCITY AND ATTENU-ATION IN NdFeB MAGNET WITHIN THE TEMPERATURE RANGE OF 80-300K(Ⅰ)
下载免费PDF全文
![点击此处可从《中国物理》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The ultrasonic velocity V and attenuation A of both longitudinal and shear waves in an anisotropic NdFeB magnet were measured over the temperature range from 80K to 300K by the pulse echo method. The anisotropy of the ultrasonic wave propagating in a NdFeB magnet was observed. Anomalous changes in both V-T and A-T curves in the temperature range of 110-160K were found, which might be due to the spin reorientation phase transition of Nd2Fe14B. 相似文献
20.
Hua Jin Zhuangqi Hu Qingmin Liu Yunlong Ge Changxu Shi 《Applied Physics A: Materials Science & Processing》1992,54(5):399-403
A crystallization study has been carried out for rapidly solidified Bi2Pb0.5Sr2Ca4Cu5Ox glass. Glass transition temperature T
g, crystallized superconducting phases and microstructural changes were measured and analysed by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The crystallization mechanism of the three superconducting phases — (2201) 20 K phase, (2212) 80 K phase, and (2223) 110 K phase — has been discussed, and a time-temperature-transformation diagram for the glass has been constructed. 相似文献