Photoelectric and x-ray dosimetric properties of TlGaS<Subscript>2</Subscript>〈Yb〉 single crystals

The photoelectric properties of TlGa_1?xYb_xS₂ (x = 0, 0.01) single crystals are investigated. It is established that partial substitution of ytterbium for gallium leads to (i) an increase in the electrical resistivity of the samples, (ii) a shift in the maximum of the intrinsic photocurrent toward the long-wavelength range of the spectrum, (iii) a considerable broadening of the spectral sensitivity range, and (iv) an increase in the amplitude of the extrinsic photocurrent. Analysis of the x-ray dosimetric characteristics of the TlGa 1?xYb_xS₂ single crystals demonstrates that, upon partial substitution of ytterbium for gallium in TlGaS₂, the x-ray sensitivity coefficient increases significantly and the current-dose characteristics ΔIE, 0 ～ E^α tend to linearity (α = 1) at low dose rates (E, R/min) of soft x rays. At high dose rates of hard x rays, α tends to 0.5 for both undoped and ytterbium-doped TlGaS₂ single crystals.     

Raman spectra of single crystals of α-P4S3

Polarization data for the Raman-active k = 0 phonons of single crystals of α-P₄S₃ have been measured at 10 K and at high resolution. Of the 24 external and 60 internal phonons expected for the D_2h factor group of α-P₄S₃ we have observed 16 external and 38 internal phonons. The effect of the layer lattice has been proposed to explain the absence of some expected phonon structure. The present work together with an earlier study of the pressure and temperature dependence of the Raman-active phonons have enabled the 4A₁, A₂ and 5E internal molecular modes to be assigned. The resulting normal coordinates give good fits for the Raman-active bands of the heavy isotope P₄ ³²S₂ ³⁴S and for the mixed chalcogen species P₄S_{3 − x}Se_x.     

Growth and characteristics of Mn-doped PMN–PT single crystals

Large sized 0.71PMN–0.29PT single crystals with different Mn-doping content (pure, 1 at.%, 3 at.%) have been grown by a modified Bridgman method. The piezoelectric and dielectric properties of the as-grown crystals are measured. The phase transitions of the poled 0.71PMN–0.29PT with the orientation along 〈001〉 and 〈110〉 directions take place during the heating process. The phase transition of the pure crystals is more complicated than that of the Mn-doped crystals. Both the pure 〈001〉- and 〈110〉-oriented crystals have two dielectric abnormal peaks besides the Curie peak. With Mn-doping, the temperature for the first dielectric abnormal peak shifts to a higher value. The Mn-doping content affects the piezoelectric and dielectric properties of the crystal greatly. 1 at.% Mn-doped crystals possesses a larger coercive field and mechanical quality factor at the expense of a little lower piezoelectric response. The growth and characteristics of pure and Mn-doped 0.71PMN–0.29PT single crystals are reported and discussed in this paper.     

EPR study of gamma-irradiated 2-Bromo-4′-methoxyacetophenone single crystals

The gamma-irradiated single crystals of 2-Bromo-4′-methoxyaceto-phenone (2B4MA) were investigated using electron paramagnetic resonance (EPR) technique. Density-functional theory calculations were employed to investigate and identify the radicals that have been assumed to be formed upon irradiation of 2B4MA single crystals. The EPR spectra of 2B4MA were recorded at different orientations in the magnetic field at room temperature. Taking into account the chemical structure and experimental spectra of irradiated single crystal of 2B4MA, it was assumed that at least two different radicals were produced in the sample. Following this assumption, six possible radicals were modeled and EPR parameters were calculated by using the DFT, B3LYP/6-311+G(d), for the modeled radicals individually. The calculated hyperfine coupling constants and g-tensors were used as initial values for simulation studies. The three crystallographic axes on the simulated spectra were well matched with experimental spectra for the two modeled radicals. Thus, we identified the R1 type radical and R4 type radical as paramagnetic species produced in gamma-irradiated 2B4MA.     

Transverse resistance of YBa2Cu3O7−δ single crystals

Measured is the transverse electrical resistance of YBa₂Cu₃O_7−δ single crystals with different oxygen deficiency values (δ) in the temperature range T_c − 300 K. The experimental data are approximated by an empiric expression accounting for the fluctuation conductivity near T_c and the semiconductor-like resistance regime. Our analysis of the concentration dependences of the fitting parameters, in particular, reveals that the resistance temperature dependence is largely affected by the sample's non-homogeneity. The latter, in turn, causes a T_c anisotropy and variable-range hopping conductivity between different phases. The deduced maximal values of the basal-plane coherence length, ξ_xy(0), are comparable with those for low-temperature superconductors.     

Birefringence of CuGa(S1−x Sex)2 single crystals

The magnitude and dispersion of birefringence of single crystals of CuGa(S_1?x Se_x)₂ solid solutions is studied in the spectral region of 0.5–2.5 μ at T=300 K. The effect of the substitution of selenium for sulfur on special features of birefringence dispersion is analyzed within the framework of the single-oscillator model.     

Electrical properties and electronic structure of Cu1−xZnxInSe2 and Cu1−xZnxInS2 single crystals

Temperature dependence of the electrical conductivity of CuInS₂–ZnIn₂S₄ and CuInSe₂–ZnIn₂Se₄ solid solutions possessing n-type conductivity has been studied. It has been established that when the temperature decreases down to ~100 to 27 K, the hopping mechanism of electrical conductivity with a variable jumping length between localized states positioned in a narrow energy band near the Fermi level becomes dominant. The main parameters of the hopping conductivity have been determined. At higher temperatures (150–300 K), in the CuInSe₂–ZnIn₂Se₄ single crystals containing 15 and 20 mol% ZnIn₂Se₄ the thermally activated conductivity with activation energy of 0.018 and 0.04 eV, respectively, is detected. Among the CuInSe₂–ZnIn₂Se₄ single crystals, samples with 5 and 10 mol% ZnIn₂Se₄ were found to be close to degenerate semiconductors. Temperature dependences of the electrical conductivity of CuInS₂–ZnIn₂S₄ single crystals are described by a more complicated function that may indicate a competition of several conduction mechanisms in these compounds. For the CuInS₂–ZnIn₂S₄ solid solutions, X-ray photoelectron core-level and valence-band spectra have been measured for both pristine and Ar⁺ ion-bombarded surfaces. Our results indicate that the Cu_1−xZn_xInS₂ single-crystal surfaces are sensitive to Ar⁺ ion-bombardment. Additionally, for the Cu_1−xZn_xInS₂ crystal with the highest ZnIn₂S₄ content, namely 12 mol% ZnIn₂S₄, the X-ray emission bands representing the energy distribution of the Cu 3d, Zn 3d and S 3p states have been measured and compared on a common energy scale with the X-ray photoelectron valence-band spectrum.     

EPR studies of Cu2+ ion in CdK2 (SO4)2·6H2O single crystals

The EPR spectra of Cu²⁺ in CdK₂(SO₄)₂·6H₂O crystals have been studied at 77 K and 300 K in three (bc, a¹c and a¹b) planes. The angular variation spectra showed that the Cu²⁺ ion enters the Cd²⁺ site in the lattice. The principal g and A values, covalency parameter (α'²), mixing coefficients (α and β) and Fermi-contact term (K) have been evaluated from the EPR analysis. The ground-state wave function of the Cu²⁺ ion has been constructed using the α'², α and β values, and the signs for the hyperfine coupling constants are also determined. The covalency value indicates the percentage of unpaired spin density present at the metal (Cu²⁺) d orbital. The nature of the distortion present in the lattice is obtained from the values of the mixing coefficients.     

Stability and stabilization of 2H martensite in Cu–Zn–Al single crystals

The stabilization of the 2H martensitic phase in Cu–Zn–Al single crystals with an electron concentration e/a?=?1.53 was investigated. This orthorhombic 2H martensite was first induced from the cubic β phase by the direct β?→?2H or the indirect β?→?18R?→?2H transformations. On loading the 2H martensite, a transition without hysteresis is observed at a stress which was denoted σ_T1. It was found that this stress is associated with a change in the behaviour of the 2H martensite. A high stabilization of the 2H martensite, around 300?K, is only obtained if an ageing is performed at a stress above σ_T1. Additionally, the stresses of the transformation to another martensitic phase, called 18R₂, were found to be constant when the value of σ_T1 is below the retransformation stress. The 2H martensite and its behaviour on ageing were studied by dilatometry, calorimetry, mechanical testing, optical microscopy and transmission electron microscopy (TEM). Models accounting for the stabilization of the 2H martensite on ageing are proposed.     

Cu-EPR in YBa2Cu3O6+δ single crystals

We report on the observation of Cu-EPR signals in single crystalline material of YBa₂Cu₃O₆₊ in the narrow oxygen concentration range 0.7<<0.9 and for temperatures 80 K<T<200 K. We provide evidence that the signal results from Cu²⁺ ions located in Cu(1)OCu(1) chain fragments.     

Nature of the anomalies of the thermolumenescence properties of dosimetric α-Al2O3 crystals

The results of investigations into the anomalies of the thermoluminescence properties of dosimetric corundum crystals are presented. The decisive role of deep-lying traps in the quenching of luminescence in anion-defect Al₂O₃ monocrystals is shown. The existence of deep-lying traps is demonstrated by the method of direct observations of thermoluminescence (TL) peaks associated with them. Experimental evidence for the influence of the degree of occupation of deep-lying traps on the main features of the TL dosimetric peak at 450 K is given. The results obtained are interpreted for a model of the interactive system of traps, which differs radically from the models described in the literature by a consideration of the temperature dependence of the probability of trapping of charge carriers on deep-lying traps. We believe that the heat quenching of luminescence is due to the thermal ionization of excited F-center states. Ural State Technical University. Translated from Izvestiya Vysshikh Uchebhykh Zavedenii, Fizika, No. 3, pp. 55–65, March, 2000.     

Anisotropy of normal resistivity in oxygen-deficient YBa2Cu3O7−x single crystals

Temperature dependences of the resistivity tensor components ρ_ab and ρ_c were measured for YBa₂Cu₃O_7?x single crystals with different oxygen contents. The resistivity anisotropy ρ_c/ρ_ab was found to grow exponentially with decreasing temperature. The results are compared with the predictions of different models describing transverse transport in the normal state of cuprate high-T _c superconductors.     

Non-classical austenite-martensite interfaces observed in single crystals of Cu–Al–Ni

Interfaces between austenite and a crossing-twins microstructure consisting of four variants of 2H-martensite are optically observed in a single crystal of Cu–Al–Ni shape memory alloy. It is shown that these non-classical interfaces form during thermally induced transitions from compound twinned 2H-martensite into austenite, which is in agreement with theoretical predictions. Individual twinning systems and martensitic variants involved in the observed microstructure are identified. The corresponding volume fractions are estimated based on the compatibility conditions at the habit plane and the macroscopic geometry of the interface. Miscellaneous topics related to the observed microstructures (formation mechanism and planeness of the interface) are briefly discussed.     

Analysis of anisotropic electrical resistivity and fluctuation conductivity of YBa2Cu3O7−δ single crystals

For a large number of YBa₂Cu₃O_7– single crystals which were grown by a flux method in different crucibles the anisotropic resistivity has been measured. An analysis of the metallic in-plane resistivity _ab gives evidence for different carrier concentrations in the individual samples caused by different amounts of oxygen disorder effects in theab-planes. The temperature dependence of the out-of-plane resistivity c which is also metallic for the best samples is determined by the applied crucible material. From the luctuation conductivity in theab-plane aboveT _c the coherence length _c (0)2.5 Å can be determined in good agreement with values obtained fromH _c2 measurements.Dedicated to Prof. Dr. G. von Minnigerode on the occasion of his 60th birthday     

High-resolution electron microscopy and X-ray diffraction study of intergrowth structures in α- and β-type YbAlB4 single crystals

Structural features of layered boride YbAlB₄ single crystals with YCrB₄-type (α-type) and ThMoB₄-type (β-type) phases derived from a hexagonal AlB₂-type structure were investigated by electron diffraction, high-resolution electron microscopy and X-ray diffraction. X-ray diffraction experiments indicate the existence of some structural motifs. High-resolution images clearly show that the structural motifs build the intergrown lamellar structures in the matrix. The lamellar structures can be characterized by a coherent tiling of deformed Yb hexagons, which are a common structure unit in the α- and β-type structures. The characteristic intergrown nanostructure is similar to that observed in the β-type TmAlB₄ polycrystalline sample.     

Mössbauer studies of57Fe doped single crystals of GdBa2Cu3O7-δ

⁵⁷Fe Mössbauer effect measurements have been performed on single crystals of⁵⁷Fe doped GdBa₂Cu₃O_7- at various c-axis orientations and temperatures. The analysis of the data yields information on the sign and direction of V_zz, the direction of B_hf with respect to V_zz and the anisotropy of the f-factor for the individual observed three quadrupole doublets. From these data we conclude that the quadrupole doublet with E_Q 1.9 mm/s is due to Fe on a regular Cu(1)-site (4-fold oxygen coordination) with distorted local symmetry (V_zz isnot parallel to the c-axis), while the other quadrupole doublets have higher oxygen coordinations (higher Lamb-Mössbauer-factor).     

Raman spectra of undoped and uranium doped CaF_2 single crystals

Raman scattering experiments for nominally pure and uranium doped CaF2 single crystals were presented. In all crystals, the Raman active T2g vibration mode of CaF2 was observed, whose frequency shift and full-width at half-maximum (FWHM) broadening correspond well with defects and impurities in CaF2 lattice. Additional Raman peaks develop in nominally pure CaF2 with high etch pits density and U6+:CaF2 crystals. Part of additional Raman peaks in the experimental results, which are assumed due to vibration modes from F- interstitials and vacancies, are in well agreement with the theoretical predications by employing the Green-function formulation.     

X-ray study of the order—disorder transition in high-stage alkali metal intercalated graphite single crystals

Graphite intercalation compounds display a variety of structural properties because of their composite nature (graphite + intercalate) and their layered arrangement. Alkali metal intercalated graphite compounds undergo order-disorder phase transitions when the temperature is varied in the range 300–10 K. The disordered state shows true two-dimensional character, whereas three-dimensional coupling takes place on ordering. Results of single-crystal X-ray diffractometric and photographic studies of stage-2 KC₂₄ single crystals are presented. The positional and orientational correlations of the modulated liquid phase have been studied from 300 K down to the temperature transition T_u = 123.5° K. At the transition, the hexagonal incommensurate solid structure of the alkali metal is modulated by the graphite potential. This transition is discussed in terms of the relaxed-close packed structure model (Dicenzo, 1982). At low temperature a second transition takes place at T_L ≈ 95 K. It is found to correspond to the breaking of the 2D hexagonal symmetry of the K layer.     

Anisotropic Kα X-ray production by 350 keV electrons in germanium single crystals

Bombarding thin single crystal films with electrons an increase of K X-ray yield is observed if a crystallographic axis or plane is rotated into the beam direction. In the case of epitaxial foils the shape of the yield peaks is of Gaussian type and the width is larger than twice the Bragg-angle depending strongly on target preparation. We have investigated these peaks around the [111] axis of a germanium single crystal thinned by ion-sputtering to a thickness of about 1 pm. An exact agreement of the width with twice the Bragg-angle and a fine structure related to the Kikuchipattern was observed.