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The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the
Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been shown that the deposition of germanium
at room temperature leads to the formation of two types of clusters. Clusters containing two to four atoms are one monolayer
thick and are mobile on the Bi layer. The second type, bilayer clusters, containing eight to ten atoms, transform into epitaxial
islands after annealing at 400–500°C. Models of possible atomic structures of bilayer clusters have been considered taking
into account their positions relative to Bi trimers. It has been found that the probability of the substitution of Si atoms
for Ge atoms during cluster formation does not exceed 20%. 相似文献
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Study of Ag/Si(111) submonolayer interface: II. Atomic geometry of Si(111) (√3 × √3 )R30°-Ag surface
Final state diffraction of Ag 3d X-ray photoelectrons from the Si(111) (√3 × √3)R30°-Ag surface has been measured. From a kinematical analysis of the diffraction patterns, it is found that a buried honeycomb framework of Ag atoms is formed on the surface with lateral displacement of the first Si layer. 相似文献
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