Grafting onto poly(ethylene terephthalate) driven by 172 nm UV light

The reactivity of the surface of poly(ethylene terephthalate) (PET) film under 172 nm UV irradiation (xenon excimer lamp) towards nitrogen-borne 1-octene, n-nonane and heptafluorodecene vapor was investigated. Materials receiving from 0 to 24 J/cm² of UV were examined by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (ToF/SIMS), water and mineral oil contact angle measurement and atomic force microscopy (AFM). A uniform nanoscale layer developed on PET surface attributed to the grafting reaction between photolytically-produced polymer radicals and vapor phase molecules.     

Ultraviolet irradiation induced changes in the surface of phenolphthalein poly(ether sulfone) film

Changes in surface characteristics of phenolphthalein poly(ether sulfone) (PES-C) film induced by ultraviolet (UV) irradiation were investigated. The surface properties of the pristine and irradiated films were studied by attenuated total-reflection FTIR (FTIR-ATR), X-ray photoelectron spectroscopy (XPS), contact angle measurements and atomic force microscopy (AFM). It was found that photooxidation degradation took place on the sample surface after irradiation and the oxygen content in the surface increased as evidenced by FTIR-ATR and XPS results. The water contact angle of the irradiated films decreased with increasing irradiation time, which was ascribed to the increased polarity of the surface induced by photooxidation. The etching of ultraviolet irradiation induced the roughening of PES-C surface after irradiation with its root-mean-square roughness (RMS) determined by AFM increased from 2.097 nm before irradiation to 7.403 nm in the area of 25 μm × 25 μm.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

Influence of surface temperature and surface modifications on the initial layer growth of para-hexaphenyl on mica (0 0 1)

Ultra-thin films of para-hexaphenyl (6P) were prepared on muscovite mica (0 0 1) utilizing organic molecular beam deposition (OMBD) under well defined ultra high vacuum (UHV) conditions. The 6P growth characteristics were studied as a function of substrate temperature and substrate surface conditions. For the initial state of layer growth, thermal desorption spectroscopy (TDS) was used to verify the existence of a wetting layer. In this monomolecular continuous wetting layer, the molecules lie flat on the surface and are rather strongly bonded. For thicker films, in-situ X-ray photoelectron spectroscopy (XPS) in combination with (TDS) was applied to reveal the kinetics of the layer growth. Ex-situ atomic-force microscopy (AFM) was used to determine the film morphology. In particular, the influence of surface modifications (carbon contamination, sputtering) on 6P layer growth was investigated. XPS and low energy electron diffraction (LEED) were used to characterize the mica surface before the film deposition. TDS and AFM revealed a considerable change in film growth, from a needle-like island growth of flat laying molecules on top of the wetting layer (for the air cleaved mica) to terrace-like film growth of standing molecules, without a wetting layer (after surface modifications).     

The influence of UV irradiation on surface composition of collagen/PVP blended films

The surface chemical composition and surface properties of collagen/poly(vinyl pyrrolidone) (PVP) blended films before and after UV irradiation (λ = 254 nm) were investigated using X-ray Photoelectron Spectroscopy (XPS), FTIR-ATR spectroscopy and Atomic Force Microscopy (AFM).The XPS results showed that collagen is enriched on the surface of the collagen/PVP blend. The surface composition of the collagen film was changed more by UV irradiation than the surface composition of the collagen/PVP blend.FTIR-ATR spectra showed that the positions of the amide bands in collagen are more altered after UV irradiation than those for the collagen/PVP blends.AFM images showed that the collagen surface is ordered contrary to PVP. The blend surface was similar to the pure collagen surface and confirms that there is more collagen present at the surface (higher concentration of collagen at the surface compared to PVP). UV irradiation caused only the small changes in the surface morphology of the collagen/PVP films. All of the results confirm that the surface of the collagen/PVP blend is more photoresistant than collagen.     

Enhanced cell affinity of poly(l-lactide) film by immobilizing phosphonized chitosan

Graft polymerization of acrylic acid (AA) onto poly(l-lactide) (PLLA) film by UV irradiation was carried out to develop surfaces for N-methylene phosphonic chitosan (NMPC) immobilization. The properties of modified films were discussed by colorimetric method, attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR), contact angles, atomic force microscopy (AFM) and osteoblast incubation. The results showed that AA solution concentration and irradiation time had effect on the graft carboxyl densities. Comparing the ATR-FTIR images, two new peaks at 1561 cm⁻¹ and 1632 cm⁻¹ proved that NMPC was immobilized on the film surface successfully. The water contact-angles were decreased from 90 ± 5° to 37 ± 5° after modification. The AFM images indicated that the surface of the combined film was rougher than that of untreated film. The grafted film provided an excellent substrate for the growth of osteoblast.     

Mechanical properties and the evolution of matrix molecules in PTFE upon irradiation with MeV alpha particles

The morphology, chemical composition, and mechanical properties in the surface region of α-irradiated polytetrafluoroethylene (PTFE) have been examined and compared to unirradiated specimens. Samples were irradiated with 5.5 MeV ⁴He²⁺ ions from a tandem accelerator to doses between 1 × 10⁶ and 5 × 10¹⁰ Rad. Static time-of-flight secondary ion mass spectrometry (ToF-SIMS), using a 20 keV C₆₀⁺ source, was employed to probe chemical changes as a function of α dose. Chemical images and high resolution spectra were collected and analyzed to reveal the effects of α particle radiation on the chemical structure. Residual gas analysis (RGA) was utilized to monitor the evolution of volatile species during vacuum irradiation of the samples. Scanning electron microscopy (SEM) was used to observe the morphological variation of samples with increasing α particle dose, and nanoindentation was engaged to determine the hardness and elastic modulus as a function of α dose.The data show that PTFE nominally retains its innate chemical structure and morphology at α doses <10⁹ Rad. At α doses ≥10⁹ Rad the polymer matrix experiences increased chemical degradation and morphological roughening which are accompanied by increased hardness and declining elasticity. At α doses >10¹⁰ Rad the polymer matrix suffers severe chemical degradation and material loss. Chemical degradation is observed in ToF-SIMS by detection of ions that are indicative of fragmentation, unsaturation, and functionalization of molecules in the PTFE matrix. The mass spectra also expose the subtle trends of crosslinking within the α-irradiated polymer matrix. ToF-SIMS images support the assertion that chemical degradation is the result of α particle irradiation and show morphological roughening of the sample with increased α dose. High resolution SEM images more clearly illustrate the morphological roughening and the mass loss that accompanies high doses of α particles. RGA confirms the supposition that the outcome of chemical degradation in the PTFE matrix with continuing irradiation is evolution of volatile species resulting in morphological roughening and mass loss. Finally, we reveal and discuss relationships between chemical structure and mechanical properties such as hardness and elastic modulus.     

Tribological properties of chemically bonded polyimide films on silicon with polyglycidyl methacrylate brush as adhesive layer

Polyimide thin films, which possess good stability and film uniformity, are successfully fabricated on single crystal silicon wafers coated with a thin polymer brush by suface-initiated polymerization (SIP) as an adhesive layer. The growth kinetic of polyglycidyl methacrylate (PGMA) brush was studied by the means of ellipsometry. The nano-scale morphology and chemical composition of PGMA brush and polyimide film were studied with atomic force microscopy (AFM), Fourier transform infrared spectrum (FT-IR), and X-ray photoelectron spectroscopy (XPS). The tribological behaviors of the thin films sliding against AISI-52100 steel ball were examined on a static-dynamic friction precision measurement apparatus and UMT-2MT tribometer. The worn surface of the polyimide thin films was investigated with scanning electron microscopy (SEM). The results indicated that the chemically bonded polyimide films exhibited better friction reduction and antiwear behavior compared to the polymide films on bare silicon surface. At a load of 0.5 N and sliding speed of 20 mm s⁻¹, the durability life of the polyimide thin films is over 25,000 sliding cycles and the friction coefficient is about 0.08.     

Study of the influence of the acrylic acid plasma parameters on silicon and polyurethane substrates using XPS and AFM

XPS and AFM have been used to investigate surface modifications produced by acrylic acid (AA) vapor plasma treatment of silicon (Si)(1 0 0) substrates and polyurethanes (PUs) membranes. XPS analyses of Si and PUs treated substrates at low plasma power (5-20 W) revealed the formation of a thin film on the surfaces, which chemically resembles the poly(acrylic acid) film conventionally synthesised. No signal of the Si substrate could be seen under these low plasma power applications on silicon. However, when the plasma power is higher than 30 W one can clearly see XPS silicon signatures. AFM measurements of silicon substrates treated with AA plasma at low power (5-20 W) showed the formation of a thin polymer film of about 220-55 nm thickness. Further, applications of high plasma power (30-100 W) displayed a marked difference from low plasma modifications and it was found sputtering of the silicon substrate. Pervaporation results of AA plasma treated PUs membranes revealed that the selectivity for the separation of methanol from methyl-t-butyl ether is higher at 100 W and 1 min treatment time, than the other conditions studied. This last finding is discussed concerning the surface modifications produced on plasma treated silicon substrates and PU membranes.     

Field electron emission from HfNxOy thin films deposited by direct current sputtering

HfN_xO_y thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm², and at the electric field of 24 V/μm, the current density is up to 1 mA/cm². The field electron emission mechanism of the HfN_xO_y thin film is also discussed.     

Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.     

Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface

The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As⁺⁵ and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.     

Preparation and characterization of thin films by plasma polymerization of glycidoxypropyltrimethoxysilane at different plasma powers and exposure times

This study aims to form a functional film on the glass substrates by plasma polymerization of glycidoxypropyltrimethoxysilane (γ-GPS). Low frequency plasma generator was used to prepare plasma polymer thin films of γ-GPS (PlzP-γ-GPS) on glass substrates at different plasma powers (30, 60 and 90 W) and exposure times (5, 15 and 30 min). XPS analyses were utilized to reveal the presence of functional groups in plasma polymer films. When higher plasma powers are applied, relative amount of Si-C bonds decreases and the amount of Si-O bonds increases. Contact angle measurements were performed to evaluate surface characteristics. Atomic force microscopy (AFM) studies were carried out to elucidate morphological changes. From AFM observations, it was obtained that the surface roughness slightly increased with the increase of plasma power from 30 to 90 W.     

Properties of Cu film and Ti/Cu film on polyimide prepared by ion beam techniques

Cu film and Ti/Cu film on polyimide substrate were prepared by ion implantation and ion beam assisted deposition (IBAD) techniques. Three-dimension white-light interfering profilometer was used to measure thickness of each film. The thickness of the Cu film and Ti/Cu film ranged between 490 nm and 640 nm. The depth profile, surface morphology, roughness, adhesion, nanohardness, and modulus of the Cu and Ti/Cu films were measured by scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindenter, respectively. The polyimide substrates irradiated with argon ions were analyzed by scanning electron microscopy (SEM) and AFM. The results suggested that both the Cu film and Ti/Cu film were of good adhesion with polyimide substrate, and ion beam techniques were suitable to prepare thin metal film on polyimide.     

Nano- and micro-scale patterning of Si (1 0 0) under keV ion irradiation

Evolution of Si (1 0 0) surface under 100 keV Ar⁺ ion irradiation at oblique incidence has been studied. The dynamics of surface erosion by ion beam is investigated using detailed analysis of atomic force microscopy (AFM) measurements. During an early stage of sputtering, formation of almost uniformly distributed nano-dots occurs on Si surface. However, the late stage morphology is characterized by self-organization of surface into a regular ripple pattern. Existing theories of ripple formation have been invoked to provide an insight into surface rippling.     

Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition

Ti films with a thickness of 1.6 μm (group A) and 4.6 μm (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 °C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth profile, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 °C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate.     

The synthesis and kinetic growth of anisotropic silver particles loaded on TiO2 surface by photoelectrochemical reduction method

Silver nanorods with average diameters of 120-230 nm and aspect ratio of 1.7-5.0 were deposited on the surface of TiO₂ films by photoelectrochemical reduction of Ag⁺ to Ag under UV light. The composite films prepared on soda-lime glass substrates were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the TiO₂ film after UV irradiation in AgNO₃ solution is composed of anatase phase TiO₂ and metallic silver with face centered cubic structure. Other compounds cannot be found in the final films. The maximum deposition content of silver particles on the surface of TiO₂ film was obtained with the AgNO₃ concentration of 0.1 M. The kinetic growth rates of silver particles can be controlled by photocatalytic activity of TiO₂ films. The studies suggest that the growth rates of silver particles increase with the enhancement of photocatalytic activity of TiO₂ films. The maximum growth rate of silver particles loaded on TiO₂ films can be up to 0.353 nm min⁻¹ among samples 1#, 2# and 3#, while the corresponding apparent rate constant of TiO₂ is 1.751 × 10⁻³ min⁻¹.     

Engineering of hydrophilic and plasmonic properties of Ag thin film by atom beam irradiation

Hydrophilic Ag nanostructures were synthesized by physical vapour deposition of 5 nm Ag thin films followed by irradiation with 1.5 keV Ar atoms. Optical absorbance measurements show a characteristic surface plasmon resonance absorption band in visible region. A blue-shift in absorbance from 532 to 450 nm is observed with increasing fluence from 1 × 10¹⁶ to 3 × 10¹⁶ atoms/cm². Atomic force microscopy was performed for the pristine and irradiated samples to study the surface morphology. The atom beam irradiation induced sputtering and surface diffusion lead to the formation of plasmonic surface. Rutherford backscattering spectroscopy of the pristine and irradiated film indicates that metal content in the film decreases with ion fluence, which is attributed to the sputtering of Ag by Ar atoms. The contact angle measurement demonstrates the possibility of engineering the hydrophilicity by atom beam irradiation.     

Optical properties of cadmium sulfide nanocrystal film prepared by electrochemical synthesis at liquid-liquid interface

Dendritic nanocrystalline CdS film was deposited at liquid-liquid interface of surfactants and an electrolyte containing 4 mmol L⁻¹ cadmium chloride (CdCl₂) and 16 mmol L⁻¹ thioacetamide (CH₃CSNH₂) with an initial pH value of 5 at 15 °C by electrochemical synthesis. The nanofilm was characterized by transmission electron microscopy (TEM), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), ultraviolet visible (UV-vis) absorption spectroscopy and fluorescence spectroscopy. The surface morphology and particle size of the nanofilm were investigated by AFM, SEM and TEM, and the crystalline size was 30-50 nm. The thickness of the nanofilm calculated by optical absorption spectrum was 80 nm. The microstructure and composition of the nanofilm was investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), showing its polycrystalline structure consisting of CdS and Cd. Optical properties of the nanofilm were investigated systematically by UV-vis absorption and fluorescence spectroscopy. A λ_onset blue shift compared with bulk CdS was observed in the absorption spectra. Fluorescence spectra of the nanofilm indicated that the CdS nanofilm emitted blue and green light. The nanocomposites film electrode will bring about anodic photocurrent during illumination, showing that the transfer of cavities produces photocurrent.     

A new approach for preventing charging up of soft material samples by coating with conducting polymers in SIMS analysis

Dynamic secondary ion mass spectroscopy (SIMS) analysis of soft materials such as polymer or biomaterial is one of challenging subjects due to the charge up effect brought from the irradiation of a primary ion beam, hampering the collection of secondary ions. Conventional methods against the charging up are the electron beam irradiation for charge compensation and surface coating with metal, normally gold. Those methods require a compromise analytical condition, reducing the primary ion beam current to suppress the range of the charging, which degrading the performances of the SIMS analyses. We have proposed that a thicker conductive layer, capable of delocalizing the charge onto the surface, should be put on a soft insulator sample to avoid charging up. The depth profile of the hair sample coated wholly with a polythiophen-based conducting polymer was successfully measured in longer time without any charging up even in the maximum current of the oxygen primary ion beam (O₂⁺: 7.5 keV, 400 nA) or using an electron beam compensation system. Thus, the proposed method coating with a conductive organic polymer against the charging issue would be expected as a breakthrough on SIMS analysis.