Parametric study on femtosecond laser pulse ablation of Au films

Ablation process of 1 kHz rate femtosecond lasers (pulse duration 148 fs, wavelength 775 nm) with Au films on silica substrates has been systemically studied. The single-pulse threshold can be obtained directly. For the multiple pulses the ablation threshold varies with the number of pulses applied to the surface due to the incubation effect. From the plot of accumulated laser fluence N × ?_th(N) and the number of laser pulses N, incubation coefficient of Au film can be obtained (s = 0.765). As the pulse energy is increased, the single pulse ablation rate is increasing following two ablation logarithmic regimes, which can be explained by previous research.     

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552 nm wavelength, 2 ps pulse, 5 μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20 nm per pulse at 10 mJ/cm², which is much higher than that achievable by the femtosecond laser for the equivalent energy fluence. Ablation threshold was determined as 2 mJ/cm². Scanning electron microscope images supported the Coulomb explosion (CE) mechanism by revealing very fine particulates, smooth surfaces and absence of thermal effects including melt layer formation. It is hypothesized that defect-activated absorption and multiphoton absorption mechanisms gave rise to a charge density in the surface layers required for CE and enabled material expulsion in the form of nanoparticles. Trenches and holes micromachined by the picosecond laser exhibited clean and smooth edges and non-thermal ablation mode for pulse repetition rates less than 250 kHz. However carbonaceous material and recast layer were noted in the machined region when the pulse repetition rate was increased 500 kHz that could be attributed to the interaction between air plasma and micro/nanoparticles. A comparison with femtosecond pulsed lasers shows the promise that picosecond lasers are more efficient and cost effective tools for creating sensor diaphragms and via holes in 4H-SiC.     

Laser heating and ablation at high repetition rate in thermal confinement regime

Laser heating and ablation of materials with low absorption and thermal conductivity (paint and cement) were under experimental and theoretical investigations. The experiments were made with a high repetition rate Q-switched Nd:YAG laser (10 kHz, 90 ns pulse duration and λ = 532 nm). High repetition rate laser heating resulted in pulse per pulse heat accumulation. A theoretical model of laser heating was developed and demonstrated a good agreement between the experimental temperatures measured with the infrared pyrometer and the calculated ones. With the fixed wavelength and laser pulse duration, the ablation threshold fluence of paint was found to depend on the repetition rate and the number of applied pulses. With a high repetition rate, the threshold fluence decreased significantly when the number of applied pulses was increasing. The experimentally obtained thresholds were well described by the developed theoretical model. Some specific features of paint heating and ablation with high repetition rate lasers are discussed.     

Femtosecond laser micromilling of Si wafers

Femtosecond laser micromilling of silicon is investigated using a regeneratively amplified 775 nm Ti:Sapphire laser with a pulse duration of 150 fs operating at 1 kHz repetition rate. The morphological observation and topological analysis of craters fabricated by single-shot laser irradiation indicated that the material removal is thermal in nature and there are two distinct ablation regimes of low fluence and higher fluence with logarithmical relations between the ablation depth and the laser fluence. Crater patterns were categorized into four characteristic groups and their formation mechanisms were investigated. Femtosecond laser micromilling of pockets in silicon was performed. The effect of process parameters such as pulse energy, translation speed, and the number of passes on the material removal rate and the formation of cone-shaped microstructures were investigated. The results indicate that the microstructuring mechanism has a strong dependence on the polarization, the number of passes and laser fluence. The optimal laser fluence range for Si micromilling was found to be 2-8 J/cm² and the milling efficiency attains its maximum between 10 and 20 J/cm².     

Passive Q-switching of short-length Tm-doped silica fiber lasers by polycrystalline Cr:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm³⁺-doped silica fiber lasers near 2 μm pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr²⁺:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 μJ and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at ∼10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed.     

Laser fluence, repetition rate and pulse duration effects on paint ablation

The efficiency (mm³/(J pulse)) of laser ablation of paint was investigated with nanosecond pulsed Nd:YAG lasers (λ = 532 nm) as a function of the following laser beam parameters: pulse repetition rate (1-10,000 Hz), laser fluence (0.1-5 J/cm²) and pulse duration (5 ns and 100 ns). In our study, the best ablation efficiency (η ≅ 0.3 mm³/J) was obtained with the highest repetition rate (10 kHz) at the fluence F = 1.5 J/cm². This ablation efficiency can be associated with heat accumulation at high repetition rate, which leads to the ablation threshold decrease. Despite the low thermal diffusivity and the low optical absorption of the paint (thermal confinement regime), the ablation threshold fluence was found to depend on the pulse duration. At high laser fluence, the ablation efficiency was lower for 5 ns pulse duration than for the one of 100 ns. This difference in efficiency is probably due to a high absorption of the laser beam by the ejected matter or the plasma at high laser intensity. Accumulation of particles at high repetition rate laser ablation and surface shielding was studied by high speed imaging.     

The potential of UV femtosecond laser ablation for varnish removal in the restoration of painted works of art

Despite significant advances, laser ablation with nanosecond pulses presents limitations in dealing with the restoration of classes of painted works of art, such as paintings with a very thin layer of varnish. Femtosecond laser processing promises the means for overcoming such limitations. To this end, femtosecond ablation of two typical varnishes, dammar and mastic, is examined. For these varnishes, processing by Ti:Sapphire irradiation (800 nm) turns out to be ineffective. In contrast, irradiation with 248 nm ∼500 fs laser pulses results in a higher etching resolution (etching rates of ∼1 μm/pulse or less). For irradiation with few laser pulses at moderate laser fluences, etched morphology is far smoother than in the processing with nanosecond laser pulses. Furthermore, chemical modifications are considerably reduced (by nearly an order of magnitude), and exhibit a number of additional novel differences. Both etching rates and extent of chemical modifications are largely independent of varnish absorptivity. In all, femtosecond UV laser irradiation is indicated to hold a high potential, offering new perspectives for the restoration of painted works of art. Finally, a tentative model is advanced accounting in a consistent way for the observations.     

Studies of craters’ dimension for long-pulse laser ablation of metal targets at various experimental conditions

Long pulse laser shots of the PALS iodine laser in Prague have been used to obtain metal target ablation at various experimental conditions. Attention is paid mainly to the dependencies of the crater diameter on the position of minimum laser-focus spot with regard to the target surface, by using different laser wavelengths and laser energies. Not only a single one, but two minima, independently of the wavelength, of the target irradiation angle and of the target material, were recorded. Significant asymmetries, ascribed to the non-linear effects of intense laser beam with pre-formed plasma, were found, too. Estimations of ejected mass per laser pulse are reported and used to calculate the efficiency of laser-driven loading. Results on metal target ablation and crater formation at high intensities (from 2 × 10¹³ to 3 × 10¹⁶ W/cm²) are presented and compared. Crater depth, crater diameter and etching yield are reported versus the laser energy, in order to evaluate the ablation threshold fluence.     

Time-resolved measurements during backside dry etching of fused silica

The laser-induced backside dry etching (LIBDE) investigated in this study makes use of a thin metal film deposited at the backside of a transparent sample to achieve etching of the sample surface. For the time-resolved measurements at LIBDE fused silica samples coated with 125 nm tin were used and the reflected and the transmitted laser intensities were recorded with a temporal resolution of about 1 ns during the etching with a ∼30 ns KrF excimer laser pulse. The laser beam absorption as well as characteristic changes of the reflection of the target surface was calculated in dependence on the laser fluence in the range of 250-2500 mJ/cm² and the pulse number from the temporal variations of the reflection and the transmission. The decrease of the time of a characteristic drop in the reflectivity, which can be explained by the ablation of the metal film, correlates with the developed thermal model. However, the very high absorption after the film ablation probably results in very high temperatures near the surface and presumably in the formation of an absorbing plasma. This plasma may contribute to the etching and the surface modification of the substrate. After the first pulse a remaining absorption of the sample was measured that can be discussed by the redeposition of portions of the ablated metal film or can come from the surface modification in the fused silica sample. These near-surface modifications permit laser etching with the second laser pulse, too.     

Elimination of cracking during UV laser ablation of SrTiO3 single crystals by employing a femtosecond laser

We have performed a comparative study of UV laser ablation of SrTiO₃ with nanosecond- and sub-picosecond sources, respectively. The experiments were performed with lasers at a wavelength of 248 nm and pulse durations of 34 ns and 500 fs. Femtosecond ablation turns out to be more efficient by one order of magnitude and eliminated the known problem of cracking of SrTiO₃ during laser machining with longer pulses. In addition, the cavities ablated with femtosecond pulses display a smoother surface with no indication of melting and well-defined, sharp edges. These effects can be explained by the reduced thermal shock effect on the material by using ultrashort pulses.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Dynamical analysis of acousto-optically Q-switched CO2 laser

A compacted size high power CO₂ laser has been developed using an acousto-optically (AO) Q-switch. Performance characteristics have been investigated as a function of output mirror transmittance. The theory of six-temperature model for CO₂ lasers has firstly been utilized to analyze the dynamical process in the AO Q-switched CO₂ laser. This theory perfectly explains the behavior of energy transfer between different molecules in laser gain medium, and describes the shape of pulse laser. The calculated pulse waveforms are in good agreement with the experimental result. Both the experimental and theoretical results present that the optimal value of output mirror transmittance is 39%. Under this condition, the measured peak power is 4750 W and pulsed width is 160 ns, which is consistent with the calculations. Six-temperature model is a perfect theory for CO₂ laser kinetics, which will lay a theoretical foundation for the laser optimum design.     

Finite element simulation of pulsed laser ablation of titanium carbide

In the present paper, a 2D finite element model based on the heat-conduction equation and on the Hertz-Knudsen equation for vaporization was developed and used to simulate the ablation of TiC by Nd:YAG and KrF pulsed laser radiation. The calculations were performed for fluences of 8 and 10 J/cm², which according to experimental results obtained previously, correspond to large increases of the ablation rate. The calculated maximum surface temperature of the target for both lasers is higher than the estimated value of TiC critical temperature, corroborating the hypothesis that the increase of the ablation rate is explained by the explosive boiling mechanism.     

Enhanced near field mediated nanohole fabrication on silicon substrate by femtosecond laser pulse

Investigation of the process of nanohole formation on silicon surface mediated with near electromagnetic field enhancement in vicinity of gold particles is described. Gold nanospheres with diameters of 40, 80 and 200 nm are used. Irradiation of the samples with laser pulse at fluences below the ablation threshold for native Si surface, results in a nanosized surface modification. The nanostructure formation is investigated for the fundamental (λ = 800 nm, 100 fs) and the second harmonic (λ = 400 nm, 250 fs) of the laser radiation generated by ultrashort Ti:sapphire laser system. The near electric field distribution is analyzed by an Finite Difference Time Domain (FDTD) simulation code. The properties of the produced morphological changes on the Si surface are found to depend strongly on the polarization and the wavelength of the laser irradiation. When the laser pulse is linearly polarized the produced nanohole shape is elongated in the E-direction of the polarization. The shape of the hole becomes symmetrical when the laser radiation is circularly polarized. The size of the ablated holes depends on the size of the gold particles, as the smallest holes are produced with the smallest particles. The variation of the laser fluence and the particle size gives possibility of fabricating structures with lateral dimensions ranging from 200 nm to below 40 nm. Explanation of the obtained results is given on the basis simulations of the near field properties using FDTD model and Mie's theory.     

Investigation of passively synchronized dual-wavelength Q-switched lasers based on V:YAG saturable absorber

In this paper the results of a theoretical and experimental investigation of synchronized passive Q-switching of two Nd:YVO₄-based solid-state lasers operating at two different wavelengths, is described. A V:YAG saturable absorbing material was used as a passive Q-switch performing the synchronization of the two laser fields. This material provides Q-switching operation at both 1064 and 1342 nm wavelengths simultaneously, saturating the same energy level. By adjusting the pump power of both lasers, it was possible to optimize the overlap of the two pulse trains and to switch between different states of synchronization. A theoretical model based on rate equations, which has been developed in order to investigate optical performance of the laser system, is in a good agreement with the experimental results. The principle of synchronized Q-switching can lead to new, pulsed all-solid-state light sources at new wavelengths based on sum-frequency mixing processes.     

Surface modifications of TiN coating by pulsed TEA CO2 and XeCl lasers

Interactions of a transversely excited atmospheric (TEA) CO₂ laser and an excimer XeCl laser, pulse durations ∼2 μs (initial spike FWHM ∼100 ns) and ∼20 ns (FWHM), respectively, with polycrystalline titanium nitride (TiN) coating deposited on high quality steel AISI 316, were studied. Titanium nitride was surface modified by the laser beams, with an energy density of 20.0 J/cm² (TEA CO₂ laser) and 2.4 J/cm² (XeCl laser), respectively. The energy absorbed from the CO₂ laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of the molten material, shock waves, etc. The energy from the excimer XeCl laser primarily leads to fast and intense target evaporation. The calculated maximum temperatures on the target surface were 3770 and 6300 K for the TEA CO₂ and XeCl lasers, respectively. It is assumed that the TEA CO₂ laser affects the target deeper, for a longer time than the XeCl laser. The effects of the XeCl laser are confined to a localized area, near target surface, within a short time period.Morphological modifications of the titanium nitride surface can be summarized as follows: (i) both lasers produced ablation of the TiN coating in the central zone of the irradiated area and creation of grainy structure with near homogeneous distribution; (ii) a hydrodynamic feature, like resolidified droplets of the material, appeared in the surrounding peripheral zone; (iii) the process of irradiation, in both cases, was accompanied by appearance of plasma in front of the target.Target color modifications upon laser irradiation indicate possible chemical changes, possibly oxidation.     

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.     

Effects of laser operating parameters on metals micromachining with ultrafast lasers

180 femtoseconds (1 kHz) and 10 picoseconds (1-50 kHz) ultrafast laser micro-structuring of the metals Ti alloy, Al and Cu have been studied for the purpose of industrial application. The effects of some key laser operating parameters were investigated. The evolution of surface morphology revealed that laser pulses overlap in a range around the spatial FWHM can help to achieve optimal residual surface roughness. While observed ablation rate (unit: μm³ per pulse) changed dramatically with repetition rate due to the combined effects of plasma absorption, residual thermal energy and phase transition, higher throughput can be achieved with higher repetition rate. This study also indicated that residual surface roughness is almost independent of repetition rate at 10 ps temporal pulse length. The ablation depth is approximately proportional to the number of overscan; however, machining accuracy deteriorates, especially for femtosecond laser processing and metals with low thermal conductivity and short electron-phonon coupling time.     

Ultra-short laser ablation of dielectrics: Theoretical analysis of threshold damage fluence and ablation depth

A coupled theoretical model based on Fokker–Planck equation for ultra-short laser ablation of dielectrics is proposed. Multiphoton ionization and avalanche ionization are considered as the sources during the generation of free electrons. The impact of the electron distribution in thermodynamic nonequilibrium on relaxation time is taken into account. The calculation formula of ablation depth is deduced based on the law of energy conservation. Numerical calculations are performed for the femtosecond laser ablation of fused silica at 526 and 1053 nm. It shows that the threshold damage fluences and ablation depths resulted from the coupled model are in good agreement with the experimental results; while the damage thresholds resulted from the approximate model significantly differ from the experimental results for lasers of long pulse width. It is concluded that the coupled model can better describe the micro-process of ultra-short laser ablation of dielectrics.     

On determining the spot size for laser fluence measurements

Energy fluence, defined as pulse energy over irradiated area, is a key parameter of pulsed laser processing. Nevertheless, most of the authors using this term routinely do not realize the problems related to the accurate measurement of the spot size. In the present paper we are aiming to approach this problem by ablating crystalline Si wafers with pulses of a commercial KrF excimer laser (λ = 248 nm, τ = 15 ns) both in vacuum and at ambient atmosphere. For any pulse energy, the size of the ablated area monotonously increases with increasing number of pulses. The difference in the ablated area could be as high as a factor of three when 2000 consecutive pulses impinge on the surface. The existence and extent of the gradual lowering of multi-pulse ablation threshold queries the applicability of routinely used procedure of dividing the pulse energy with the size of the ablated area exposed into either carbon-paper or a piece of Si with one or a few pulses when determining the fluence. A more quantitative way is proposed allowing comparison of results originating from different laboratories.