Mg substitutions in ZnO-Al2O3 thin films and its effect on the optical absorption spectra of the nanocomposite

ZnO-Al₂O₃ nanocomposite thin films were prepared by sol-gel technique. The room temperature synthesis was mainly based on the successful peptization of boehmite (AlO(OH)) and Al(OH)₃ compounds, so as to use it as matrix to confine ZnO nanoparticles. The relative molar concentrations of xZnO to (1 − x) Al₂O₃ were varied as x = 0.1, 0.2 and 0.5. The optical absorption spectra of the thin films showed intense UV absorption peaks with long tails of variable absorption in the visible region of the spectra. The ZnO-Al₂O₃ nanocomposites thin films were doped with MgO by varying its molar concentrations as y = 0.05, 0.75, 0.1, 0.125, 0.15 and 0.2 with respect to the ZnO present in the composite. The MgO doped thin films showed suppression of the intense absorption peaks that was previously attained for undoped samples. The disappearance of the absorption peaks was analyzed in terms of the crystalline features and lattice defects in the nanocomposite system. The bulk absorption edge, which is reportedly found at 3.37 eV, was shifted to 5.44 eV (for y = 0.05), 5.63 eV (for y = 0.075) and maximum to 5.77 eV (for y = 0.1). In contrast, beyond the concentration, y = 0.1 the absorption edges were moved to 5.67 eV (for y = 0.125), 5.61 eV (for y = 0.15) and to 5.49 eV (for y = 0.2). This trend was explained in terms of the Burstein-Moss shift of the absorption edges.     

Photoluminescence characteristics of neodymium oxide nanocrystal/titania/ormosil composite sol-gel thin films

Neodymium (III) oxide nanocrystal/titania/organically-modified silane (ormosil) composite thin films have been prepared using a chemical approach consisting of a combination of inverse microemulsion and sol-gel techniques at low temperature. Transmission electron microscopy shows that the neodymium (III) oxide nanoparticles have a needle-like nanocrystal structure. A strong room temperature emission at 1064 nm, corresponding to the ⁴ F _3/2?⁴ I _11/2 transition, has been observed as a function of the heat treatment temperature used for the production of the composite thin films. In addition to this emission, two other main emissions at 890 nm and at 1336 nm have also been observed. In particular, there was a clear shoulder peak at 1145 nm, probably be due to the host matrix, which was observed in all the measured samples and this shoulder peak gave a maximum intensity after heat treatment at 300 °C. Received: 6 September 2000 / Accepted: 15 November 2000 / Published online: 20 June 2001     

Sol-gel preparation and photoluminescence property of YBO3:Eu/Tb nanocrystalline thin films

YBO₃:Eu³⁺/Tb³⁺ nanocrystalline thin films were successfully deposited onto quartz glass substrates by Pechini sol-gel dip-coating method, using rare-earth nitrates and boric acid as starting materials. The crystal structure, morphology, chemical composition and photoluminescence property of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and fluorescence spectrophotometer. The results of XRD, AFM, XPS and FTIR revealed that the films were composed of spherical YBO₃:Eu³⁺/Tb³⁺ nanocrystals with average grain size of 80 nm. The YBO₃:Eu³⁺ film exhibited strong orange emission at 595 nm and red emission at 615 nm, which were, respectively ascribed to the (⁵D₀→⁷F₁) and (⁵D₀→⁷F₂) transitions of Eu³⁺. The YBO₃:Tb³⁺ film showed dominant green emission at 545 nm due to the ⁵D₄-⁷F₅ transition of Tb³⁺.     

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb_1−XLa_XTiO₃ thin films, (X=0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO₂/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300°C range in an O₂ atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO₃. The films deposited on Pt/Ti/SiO₂/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration.     

Highly enhanced photoluminescence and X-ray excited luminescence of Li doped Gd2O3:Eu thin films

Transparent Li-doped Gd₂O₃:Eu³⁺ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li⁺ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li⁺ ions into Gd₂O₃ lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd_1.84Li_0.08Eu_0.08O_3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd_1.92Eu_0.08O₃ film. And it could be achieved the highest intensity for sintering the Gd_1.84Li_0.08Eu_0.08O_3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system.     

Novel hydrophobic/hydrophilic patterning process by photocatalytic Ag nucleation on TiO2 thin film and electroless Cu deposition

A hydrophobic/super-hydrophilic pattern was prepared on a TiO₂ thin film by a new fabrication process. The process consists of five key steps: (1) photocatalytic reduction of Ag⁺ to Ag (nucleation), (2) electroless Cu deposition, (3) oxidation of Cu to CuO, (4) deposition of a self-assembled monolayer (SAM), and (5) photocatalytic decomposition of selected areas of the SAM. A hydrophobic/super-hydrophilic pattern with 500-μm² hydrophilic areas was obtained in this process. It is particularly noteworthy that a UV irradiation time of only 1 s was sufficient for the nucleation step in the patterning process.     

First applicability of ZnGa2O4 : Ge, Li, Mn phosphor for a plasma display panel

The green emission intensity of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ excited by the vacuum ultraviolet line of 147 nm reaches 70% of commercial green Zn₂SiO₄:Mn²⁺. The vacuum ultraviolet excitation spectra consist of four peaks. In a plasma display test bed filled with Ar and Ne plasma discharged by a radio-frequency generator of 13.6 MHz, ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ and commercial Zn₂SiO₄:Mn²⁺ phosphor screens show a linear increase in luminance with increasing self bias voltages. Increasing gas pressures cause the luminance to increase. Also, on increasing the self bias voltages and the gas pressures, the current densities of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphor screens are increased; this is the same behavior as that of the commercial phosphor.     

Superhydrophilic stability enhancement of RF co-sputtered TixSi1−xO2 thin films in dark

Ti_xSi_1−xO₂ compound thin-film systems were deposited by reactive RF magnetron co-sputtering technique. The effect of Ti concentration on the hydrophilicity of Ti_xSi_1−xO₂ compound thin films was studied and it was shown that the films with Ti_0.6Si_0.4O₂ composition possess the best hydrophilic property among all the grown samples. Surface ratio and average roughness of the thin films were measured by atomic force microscopy (AFM). Surface chemical states and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). In addition, XPS revealed that the amount of Ti-O-Si bonds in nanometer depth from the surface of the Ti_0.6Si_0.4O₂ films was the maximum, which resulted in the most stable superhydrophilic property. According to XRD data analysis for the pure TiO₂ films, the polycrystalline anatase phase was formed with an average grain size of about 15 nm. Moreover, amorphous phase was also formed for the Ti_xSi_1−xO₂ compound systems due to presence of silicon in the films. Finally, optical properties of the films such as transmission, reflection and band gap energy were investigated using UV-vis spectrophotometry. It was found that the transmittance of the films was decreased with increasing Ti concentration in the films.     

Analysis of codeposited Gd2O3/SiO2 composite thin films by phase modulated spectroscopic ellipsometric technique

Tailoring of the refractive index of optical thin films has been a very fascinating as well as challenging topic for developing new generation optical coatings. In the present work a novel Gd₂O₃/SiO₂ composite system has been experimented and probed for its superior optical properties through phase modulated spectroscopic ellipsometry, spectrophotometry and atomic force microscopy. The optical parameters of the composite films have been evaluated using Tauc-Lorentz (TL) formulations. In order to derive the growth dependent refractive index profiles, each sample film has been modeled as an appropriate multilayer structure where each sub-layer was treated with the above TL parameterizations. All codeposited films demonstrated superiority with respect to the band gap and morphological measurements. At lower silica mixing compositions such as in 10-20% level, the composite films depicted superior spectral refractive index profile, band gap as well as the morphology. This aspect highlighted the fact that microstructural densifications in composite films can override the chemical compositions while deciding the refractive index and optical properties in such thin films.     

Enhanced magneto-optical Kerr effects in nanocrystalline Sc-doped CoFe2O4 thin films

Nanocrystalline CoFe_2−xSc_xO₄ (x=0-0.4) thin films were prepared on silicon substrates at reduced temperature by a sol-gel process, and the doping effects of scandium on the microstructure, magnetism and polar magneto-optical Kerr effects of the as-deposited films were examined. It was shown that the intensities of both of the Kerr rotation peaks increase with the doping content x of Sc³⁺. The increase for the peak at 540 nm is due to the decrease of the electrostatic polarization of O²⁻ resulting from the relatively large radius of Sc³⁺, and that for the peak at 620 nm was a result of the migration of Co²⁺ from octahedral to tetrahedral sites in the presence of the dopant of Sc³⁺.     

Optical study of three-dimensional magnetic photonic crystals opal/Fe3O4

Optical and magneto-optical properties of three-dimensional magnetic photonic crystals, based on magnetite Fe₃O₄ embedded into an opal film matrix, are investigated in both transmission and reflection. A strong enhancement of the polar Kerr effect and a modification of the Faraday effect have been found near the photonic band-gap of about 1.8 eV. Unusual changes of hysteresis curves and their dependence on photon energy have been revealed in the spectral region where the magneto-optical effect reverses its sign. This phenomenon has been explained by two types of magnetite particles inside the opal matrix having different coercive fields and spectral behaviour.     

Deposition and characterization of La2Ti2O7 thin films via spray pyrolysis process

Thin films of La₂Ti₂O₇ have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O₂ as a carrier gas. The composition, crystal structure and morphology of the films are studied.     

Optical absorption and thermoluminescence properties of ZnF2-MO-TeO2 (MO=As2O3, Bi2O3 and P2O5) glasses doped with chromium ions

Optical absorption, thermoluminescence, infrared spectra and differential thermal analysis of three different tellurite glass systems viz., ZnF₂-As₂O₃-TeO₂, ZnF₂-Bi₂O₃-TeO₂ and ZnF₂-P₂O₅-TeO₂ containing 0.4% of Cr₂O₃, have been investigated. Results have been analysed in the light of different oxidation states of chromium ion and the most suitable host for lasing Cr³⁺ ions has been identified and reported.     

Characterization of LaMnAl11O19 by FT-IR spectroscopy of adsorbed NO and NO/O2

The nature of the NO_x species produced during the adsorption of NO at room temperature and during its coadsorption with oxygen on LaMnAl₁₁O₁₉ sample with magnetoplumbite structure obtained by a sol-gel process has been investigated by means of in situ FT-IR spectroscopy. The adsorption of NO leads to formation of anionic nitrosyls and/or cis-hyponitrite ions and reveals the presence of coordinatively unsaturated Mn³⁺ ions. Upon NO/O₂ adsorption at room temperature various nitro-nitrato structures are observed. The nitro-nitrato species produced with the participation of electrophilic oxygen species decompose at 350 °C directly to N₂ and O₂. No NO decomposition is observed in absence of molecular oxygen. The adsorbed nitro-nitrato species are inert towards the interaction with methane and block the active sites (Mn³⁺ ions) for its oxidation. Noticeable oxidation of the methane on the NOx⁻-precovered sample is observed at temperatures higher than 350 °C due to the liberation of the active sites as a result of decomposition of the surface nitro-nitrato species. Mechanism explaining the promoting effect of the molecular oxygen in the NO decomposition is proposed.     

Preparation, structural and photoluminescent properties of CeO2:Eu films derived by Pechini sol-gel process

In this study, CeO₂ and CeO₂:Eu films were prepared by a simple Pechini sol-gel process and dip-coating method. CeO₂ were successfully synthesized by hydrolysis of cerium nitrate. Thermogravimetric analysis was used to study the thermal chemical properties of sol-gel powder. Structural properties of CeO₂ films annealed at different temperature ranging from 400 to 900 °C were investigated by X-ray diffraction, field emission scanning electron microscopy, and Fourier transform infrared spectroscopy. Luminescent properties of CeO₂:Eu³⁺ films were investigated by excitation and emission spectra. Our results show that CeO₂ is a good host material for rare earth ions doping and Pechini sol-gel process is a useful method to derive high quality, macrocrack free, pure and doped CeO₂ films.     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O₂ with N₂ ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga₂O₃ layer at the GaN nanowire surface at 900 ^°C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.     

Structure, microstructure and photoluminescence properties of Fe doped SnO2 thin films

In this paper, effects of Fe doping on crystallinity, microstructure and photoluminescence (PL) properties of sol-gel derived SnO₂ thin films are reported. It is shown that doping of Fe³⁺ ions leads to crystallite size reduction and higher strain in SnO₂ thin films. The room temperature PL spectra show marked changes in intensity and blue-shift of the emission lines upon Fe doping. These observations have been correlated with structural changes and defect chemistry of Fe doped SnO₂ thin films.     

Investigation of FIB irradiation damage in La0.7Sr0.3MnO3 thin films

In this work we analyse systematically how morphological and magnetotransport properties of manganite thin films are affected by the damage induced by focused ion beam (FIB) irradiation. We irradiate different areas of the same sample with doses ranging from 5×10¹² to 3×10¹⁷ ions/cm² and we find that the film becomes swollen for doses up to 10¹⁶ ions/cm² and is eventually eroded by ion milling for further irradiation. On the other hand, transport properties are much more sensitive to FIB irradiation: the metal–insulator transition temperature is found to decrease monotonically with increasing doses up to 1.8×10¹³ ions/cm². At doses higher than 5.6×10¹³ ions/cm² the metallic state is completely suppressed and likely, also ferromagnetism.     

Optical properties of GdTaO4:Eu thick films prepared from a PVP-containing solution

Transparent GdTaO₄:Eu³⁺ thick films were prepared from the inorganic salt and 2-methoxyethanol solution containing polyvinylpyrrolidone (PVP) via sol-gel technique. The critical thickness of the film, i.e. the maximum thickness achievable without crack formation via non-repetitive deposition, was 0.8 μm. The effect of PVP on the morphology, crystallization behavior and optical property of the GdTaO₄:Eu³⁺ thick film was investigated. The results indicated that PVP could play an important role in the formation of transparent GdTaO₄:Eu³⁺ thick films, suppressing the stress evolution, adjusting the sol viscosity, ameliorating the crystallinity, and strengthening the covalency of Eu-O bonds. The GdTaO₄:Eu³⁺ thick films prepared with PVP exhibited a superior photoluminescence and X-ray exited luminescence, which implies that it will have promising applications in high-spatial-resolution X-ray imaging and flat panel display devices.