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1.
Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H2S ∼10−4 Torr). The H2S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH2)2] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 °C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H2S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication. 相似文献
2.
Sulphides of zinc and cadmium have been utilized effectively in various opto-electronic devices. In the present work cadmium zinc sulphide (Cd0.4Zn0.6S) thin film has been deposited on ultra clean glass substrate by a simple inexpensive screen-printing method using cadmium sulphide, zinc sulphide, anhydrous cadmium chloride and ethylene glycol. Cadmium chloride has been used as sintering aid and ethylene glycol as a binder. Effect of sintering aid on the optical and structural properties of prepared cadmium zinc sulphide film has been investigated. The optical band gap (Eg) of the film has been studied by using reflection spectra in wavelength range 325–600 nm. It is found that reflection spectra suffer a drastic fall at two places, which is indicative of two band gaps of film viz. 2.38 eV and 2.9 eV corresponding to CdS and Cd0.6Zn0.4S, respectively. This is suggestive of the fact that cadmium zinc sulphide is a wide band gap semiconducting material. X-ray diffraction also confirms the formation of Cd0.6Zn0.4S composition. 相似文献
3.
ZnS thin films were deposited on soda lime glass and aluminum substrates by close-spaced sublimation technique. The change in composition, structural and optical properties of the films was investigated as a function of the substrate temperature. The deposited films were stoichiometric and crystalline in nature having cubic structure oriented only along (1 1 1) plane. The energy band gap of the films deposited at the substrate temperature of 150, 250 and 350 °C was 3.52, 3.58 and 3.63 eV respectively. These films were then bombarded with 2-10 keV energy pulsed Ar+ beam and their electron yield was determined from impinging ion and emitted electron currents. The electron yield of ZnS films was much high as compared to the metals. The electron yield of ZnS films increased with energy of the incident ion and got saturated at about 8 keV. The most important result of this study was that the electron yield of ZnS films having same composition was different. Monte Carlo simulations performed to interpret these experimental findings showed that the dissimilar electron yields of ZnS films is due to the combined effect of energy band gap, surface barrier potential and density of the films. 相似文献
4.
Charita Mehta 《Applied Surface Science》2009,256(3):608-614
This paper presents the chemical bath deposition of zinc selenide (n-ZnSe) nanocrystalline thin films on non-conducting glass substrates, in an aqueous alkaline medium using sodium selenosulphate as Se2− ion source. The X-ray diffraction studies show that the deposited ZnSe material is nanocrystalline with a mixture of hexagonal and cubic phase. The direct optical band gap ‘Eg’ for the as-deposited n-ZnSe films is found to be 3.5 eV. TEM studies show that the ZnSe nanocrystals (NCs) are spherical in shape. Formation of ZnSe has been confirmed with the help of infrared (IR) spectroscopy by observing bands corresponding to the multiphonon absorption. We demonstrate the effect of the deposition temperature and reactant concentration on the structural, optical and electrical properties of ZnSe films. 相似文献
5.
When a circularly polarized plane wave is obliquely incident on a chiral sculptured thin film (STF), the Maxwell stress dyadic exhibits a decreasing periodic variation across the thickness of the film. Normal and tangential surface tractions exist on the two faces of the chiral STF, as well as a net normal pressure across the film. These stresses are affected by the incidence angle of light, and are maximized when (i) the incident plane wave and the chiral STF are co-handed, (ii) the wavelength falls within a regime called the Bragg regime, (iii) the ratio of film thickness to the structural period of the chiral STF reaches a saturation value, and (iv) the deviation from normal incidence is small. 相似文献
6.
Highly efficient transparent Zn2SiO4:Mn2+ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn2SiO4:Mn2+ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn2SiO4: Mn2+ crystals. 相似文献
7.
Z. Sofiani B. Derkowska M. Wojdy?a M. Alaoui Lamrani W. Ba?a B. Sahraoui 《Optics Communications》2006,267(2):433-439
In this paper, zinc oxide (ZnO) and cerium-doped zinc oxide (ZnO:Ce) films were deposited by reactive chemical pulverization spray pyrolysis technique using zinc and cerium chlorides as precursors. The effects of Ce concentration on the structural and optical properties of ZnO thin films were investigated in detail. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) measurements. All deposited ZnO layers at the temperature 450 °C are polycrystalline and indicate highly c-axis oriented structure. The dimension of crystallites depends on incorporation of Ce atoms into the ZnO films. The photoluminescence spectra of the films have been studied as a function of the deposition parameters such as doping concentrations and post grows annealing. Photoluminescence spectra were measured at the temperature range from 13 K to 320 K. 相似文献
8.
Hyun Kyoung Yang Byung Kee Moon Jung Hyun Jeong Soung Soo Yi Kwang Ho Kim 《Journal of luminescence》2009,129(5):492-5107
YVO4:Sm3+ films were deposited on Al2O3 (0 0 0 1) substrates at various oxygen pressures changing from 13.3 to 46.6 Pa by using the pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The XRD pattern confirmed that YVO4:Sm3+ film has zircon structure and the AFM study revealed that the films consist of homogeneous grains ranging from 100 to 400 nm. The room temperature photoluminescence (PL) spectra showed that the emitted radiation was dominated by a reddish-orange emission peak at 602 nm radiating from the transition of (4G5/2→6H7/2). The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the deposition conditions, in particular, the substrate temperature. The surface roughness and photoluminescence intensity of these films showed similar behavior as a function of oxygen pressure. 相似文献
9.
H.E. Atyia 《Physica B: Condensed Matter》2008,403(18):3130-3136
Se85Te10Bi5 films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se85Te10Bi5 films were amorphous. Electrical conduction activation energy (ΔEσ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se85Te10Bi5 films reveals that it is typical for a memory switch. The switching voltage Vth increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of Vth is found to be 0.325 eV. The switching phenomenon in amorphous Se85Te10Bi5 films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se85Te10Bi5 films. Allowed non-direct transitions with an optical energy gap (Egopt) of 1.33 eV have been obtained. ΔEσ is almost half the obtained value of Egopt, which suggested band to band conduction as indicated by Davis and Mott. 相似文献
10.
Hyun Kyoung Yang G. Seeta Rama Raju Byung Chun Choi Jung Hwan Kim 《Applied Surface Science》2009,255(9):5062-5066
CaTiO3:Pr3+ films were deposited on different substrates such as Al2O3 (0 0 0 1), Si (1 0 0), MgO (1 0 0), and fused silica using pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by XRD and SEM measurements. The films grown on the different substrates have different crystallinity and morphology. The FWHM of (2 0 0) peak are 0.18, 0.25, 0.28, and 0.30 for Al2O3 (0 0 0 1), Si (1 0 0), MgO (1 0 0), and fused silica, respectively. The grain sizes of phosphors grown on different substrates were estimated by using Scherrer's formula and the maximum crystallite size observed for the thin film grown on Al2O3 (0 0 0 1). The room temperature PL spectra exhibit only the red emission peak at 613 nm radiated from the transition of (1D2 → 3H4) and the maximum PL intensity for the films grown on the Al2O3 (0 0 0 1) is 1.1, 1.4, and 3.7 times higher than that of the CaTiO3:Pr3+ films grown on MgO (1 0 0), Si (1 0 0), and fused Sillica substrates, respectively. The crystallinity, surface morphology and luminescence spectra of thin-film phosphors were highly dependent on substrates. 相似文献
11.
Radio-frequency magnetron sputtering technique is used to deposit Ba0.65Sr0.35TiO3 (BST) thin films on fused quartz substrates. In order to prepare the high-quality BST thin films, the crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). More intense characteristic diffraction peaks and better crystallization can be observed in BST thin films deposited at 600 °C and subsequently annealed at 700 °C. The refractive index of the films is determined from the measured transmission spectra. The dependences of the refractive index on the deposition parameters of BST thin films are different. The refractive index of the films increases with the substrate temperature. At lower sputtering pressure, the refractive index increases from 1.797 to 2.197 with pressure increase. However, when the pressure increases up to 3.9 Pa, the refractive index reduces to 1.86. The oxygen to argon ratio also plays an important effect on the refractive index of the films. It has been found that the refractive index increases with increase in the ratio of oxygen to argon. The refractive index of BST thin films is strongly dependent on the annealing temperature, which also increases as the annealing temperature ascends. In a word, the refractive index of BST thin films is finally affected by the films’ microstructure and texture. 相似文献
12.
The optical properties of polycrystalline lead iodide thin film grown on Corning glass substrate have been investigated by spectroscopic ellipsometry. A structural model is proposed to account for the optical constants of the film and its thickness. The optical properties of the PbI2 layer were modeled using a modified Cauchy dispersion formula. The optical band gap Eg has been calculated based on the absorption coefficient (α) data above the band edge and from the incident photon energy at the maximum index of refraction. The band gap was also measured directly from the plot of the first derivative of the experimental transmission data with respect to the light wavelength around the transition band edge. The band gap was found to be in the range of 2.385±0.010 eV which agrees with the reported experimental values. Urbach's energy tail was observed in the absorption trend below the band edge and was found to be related to Urbach's energy of 0.08 eV. 相似文献
13.
Kyoo Sung Shim Ye Ran Jeong Byung Chun Choi Jong Seong Bae Jung Hwan Kim 《Applied Surface Science》2007,253(19):8146-8150
Li-doping has been used to improve luminescent characteristics of thin films. Influence of Li-doping on the crystallization, surface morphology and luminescent properties of GdVO4:Eu3+ films have been investigated. Crystallinity and surface morphology of thin films have been very important factors to determine luminescent characteristics and depended on the deposition conditions. The GdVO4:Eu3+ and Li-doped GdVO4:Eu3+ thin films have been grown using pulsed laser deposition method on Al2O3 (0 0 0 1) substrates at a substrate temperature of 600 °C under an oxygen pressure of 13.33-53.33 Pa. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. A broadband incoherent ultraviolet light source with a dominant excitation wavelength of 310 nm and a luminescence spectrometer have been used to measure photoluminescence spectra at room temperature. The emitted radiation was dominated by the red emission peak at 619 nm radiated from the transition of 5D0-7F2 of Eu3+ ions. Particularly, the peak intensity of Li-doped GdVO4 films was increased by a factor of 1.7 in comparison with that of GdVO4:Eu3+ films. The enhanced luminescence results not only from the improved crystallinity but also from the reduced internal reflections caused by rougher surfaces. The luminescent intensity and surface roughness exhibited similar behavior as a function of oxygen pressure. 相似文献
14.
Soumen Das 《Applied Surface Science》2007,253(21):8661-8668
ZnO-Al2O3 nanocomposite thin films were prepared by sol-gel technique. The room temperature synthesis was mainly based on the successful peptization of boehmite (AlO(OH)) and Al(OH)3 compounds, so as to use it as matrix to confine ZnO nanoparticles. The relative molar concentrations of xZnO to (1 − x) Al2O3 were varied as x = 0.1, 0.2 and 0.5. The optical absorption spectra of the thin films showed intense UV absorption peaks with long tails of variable absorption in the visible region of the spectra. The ZnO-Al2O3 nanocomposites thin films were doped with MgO by varying its molar concentrations as y = 0.05, 0.75, 0.1, 0.125, 0.15 and 0.2 with respect to the ZnO present in the composite. The MgO doped thin films showed suppression of the intense absorption peaks that was previously attained for undoped samples. The disappearance of the absorption peaks was analyzed in terms of the crystalline features and lattice defects in the nanocomposite system. The bulk absorption edge, which is reportedly found at 3.37 eV, was shifted to 5.44 eV (for y = 0.05), 5.63 eV (for y = 0.075) and maximum to 5.77 eV (for y = 0.1). In contrast, beyond the concentration, y = 0.1 the absorption edges were moved to 5.67 eV (for y = 0.125), 5.61 eV (for y = 0.15) and to 5.49 eV (for y = 0.2). This trend was explained in terms of the Burstein-Moss shift of the absorption edges. 相似文献
15.
Transparent Li-doped Gd2O3:Eu3+ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li+ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li+ ions into Gd2O3 lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd1.84Li0.08Eu0.08O3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd1.92Eu0.08O3 film. And it could be achieved the highest intensity for sintering the Gd1.84Li0.08Eu0.08O3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system. 相似文献
16.
J.J. Ding 《Applied Surface Science》2010,256(13):4304-1266
Al-doped ZnO (ZnO:Al) thin films with different Al contents were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. X-ray diffraction (XRD) measurements showed that the crystallinity of the films was promoted by appropriate Al content (0.75 wt.%). Then the ZnO:Al film with Al content of 0.75 wt.% was annealed in vacuum at different temperatures. XRD patterns revealed that the residual compressive stress decreased at higher annealing temperatures. While the surface roughness of the ZnO:Al film annealed at 300 °C became smoother, those of the ZnO:Al films annealed at 600 and 750 °C became rougher. The photoluminescence (PL) measurements at room temperature revealed a violet, two blue and a green emission. The origin of these emissions was discussed and the mechanism of violet and blue emission of ZnO:Al thin films were suggested. We concluded that the defect centers are mainly ascribed to antisite oxygen and interstitial Zn in annealed (in vacuum) ZnO:Al films. 相似文献
17.
Ligang MaShuyi Ma Haixia ChenXiaoqian Ai Xinli Huang 《Applied Surface Science》2011,257(23):10036-10041
Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed. 相似文献
18.
E. Márquez J.M. González-Leal R. Prieto-Alcón M. Vlcek A. Stronski T. Wagner D. Minkov 《Applied Physics A: Materials Science & Processing》1998,67(3):371-378
40 S40Se20, deposited by thermal evaporation, were obtained in the 400 nm to 2200 nm spectral region. The optical constants of this
amorphous material were computed using an optical characterization method based mainly on the ideas of Minkov and Swanepoel
of utilising the upper and lower envelopes of the spectrum, which allows us to obtain both the real and imaginary parts of
the complex refractive index, and the film thickness. Thickness measurements made by a surface-profiling stylus have been
carried out to cross-check the results obtained by the optical method. The dispersion of the refractive index is discussed
in terms of the single-oscillator Wemple–DiDomenico model. The optical band gap has been determined from absorption coefficient
data by Tauc’s procedure. Finally, the photo-induced and thermally induced changes in the optical properties of a-As40S40Se20 thin films were also studied, using both transmission and reflection spectra.
Received: 11 February 1998/Accepted: 16 February 1998 相似文献
19.
Zinc selenide (ZnSe) thin films (d = 0.11-0.93 μm) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. Their structural characteristics were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The experiments showed that the films are polycrystalline and have a zinc blende (cubic) structure. The film crystallites are preferentially oriented with the (1 1 1) planes parallel to the substrate surface. AFM images showed that the films have a grain like surface morphology. The average roughness, Ra = 3.3-6.4 nm, and the root mean square roughness, Rrms = 5.4-11.9 nm, were calculated and found to depend on the film thickness and post-deposition heat treatment.The spectral dependence of the absorption coefficient was determined from transmission spectra, in the range 300-1400 nm.The values of optical bandgap were calculated from the absorption spectra, Eg = 2.6-2.7 eV.The effect of the deposition conditions and post-deposition heat treatment on the structural and optical characteristics was investigated. 相似文献
20.
Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O2 with the relative O2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. 相似文献